JP2006294608A - 有機電界発光素子の製造方法 - Google Patents
有機電界発光素子の製造方法 Download PDFInfo
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- JP2006294608A JP2006294608A JP2006102144A JP2006102144A JP2006294608A JP 2006294608 A JP2006294608 A JP 2006294608A JP 2006102144 A JP2006102144 A JP 2006102144A JP 2006102144 A JP2006102144 A JP 2006102144A JP 2006294608 A JP2006294608 A JP 2006294608A
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- heating body
- insulating film
- organic electroluminescent
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 20
- 238000000354 decomposition reaction Methods 0.000 claims description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 41
- 239000010410 layer Substances 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241001364096 Pachycephalidae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47G—HOUSEHOLD OR TABLE EQUIPMENT
- A47G9/00—Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
- A47G9/10—Pillows
- A47G9/1081—Pillows comprising a neck support, e.g. a neck roll
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F5/00—Orthopaedic methods or devices for non-surgical treatment of bones or joints; Nursing devices; Anti-rape devices
- A61F5/56—Devices for preventing snoring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Pulmonology (AREA)
- Plasma & Fusion (AREA)
- Otolaryngology (AREA)
- Public Health (AREA)
- Vascular Medicine (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- Heart & Thoracic Surgery (AREA)
- Nursing (AREA)
- Veterinary Medicine (AREA)
- Biomedical Technology (AREA)
- Orthopedic Medicine & Surgery (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】第1電極、少なくとも発光層を含む有機膜、および第2電極が形成された基板を準備する段階と、第1ガスがプラズマ発生領域および加熱体を通過することによって形成された第1ラジカルと、第2ガスが加熱体を通過することによって形成された第2ラジカルとが反応して生成した絶縁膜が、前記第2電極上に形成される段階と、を含むことを特徴とする有機電界発光素子の製造方法である。
【選択図】図4
Description
102 アンテナ、
103、217、 第1電源、
104 ガス、
105 ガス注入口、
106、232、 基板、
107、231 チャック、
108、222 第2電源、
109 ドア、
110、202 真空ポンプ、
111、203 排気口、
211 シャワーヘッド、
212 空洞、
213 第1ガス注入口、
214 第2ガス注入口、
215 第1ノズル、
216 第2ノズル、
218 電極、
221 加熱体、
301 バッファー層、
302 半導体層、
303 ゲート絶縁膜、
304 ゲート電極、
305 層間絶縁膜、
306 ソース/ドレイン電極、
307 パッシベーション層、
308 平坦化層、
309 第1電極、
310 画素を定義する層、
311 有機膜、
312 第2電極、
313 保護膜。
Claims (11)
- 第1電極、少なくとも発光層を含む有機膜、および第2電極が形成された基板を準備する段階と、
第1ガスがプラズマ発生領域および加熱体を通過することによって形成された第1ラジカルと、第2ガスが加熱体を通過することによって形成された第2ラジカルとが反応して生成した絶縁膜が、前記第2電極上に形成される段階と、
を含むことを特徴とする、有機電界発光素子の製造方法。 - 前記絶縁膜は前記有機電界発光素子の保護膜であることを特徴とする、請求項1に記載の製造方法。
- 前記第1ガスが、プラズマ発生領域を先に通過した後に、前記加熱体を通過することによって前記第1ラジカルが形成されることを特徴とする、請求項1または2に記載の製造方法。
- 前記絶縁膜が形成される前に、
前記基板を、プラズマ発生領域および加熱体を具備したチャンバー内部に装着する段階と、
前記チャンバーに前記第1ガスおよび前記第2ガスを供給する段階と、
をさらに含むことを特徴とする、請求項1〜3のいずれか1項に記載の製造方法。 - 前記チャンバーがシャワーヘッドをさらに具備しており、
前記プラズマ発生領域が、前記シャワーヘッドの内部に形成された空洞であることを特徴とする、請求項4に記載の製造方法。 - 前記第1ガスの分解エネルギーは、前記第2ガスの分解エネルギーよりも大きいことを特徴とする、請求項1〜5のいずれか1項に記載の製造方法。
- 前記第1ガスはアンモニアガスまたは窒素ガスであることを特徴とする、請求項1〜6のいずれか1項に記載の製造方法。
- 前記第2ガスはシランガスであることを特徴とする、請求項1〜7のいずれか1項に記載の製造方法。
- 前記加熱体はフィラメントであることを特徴とする、請求項1〜8のいずれか1項に記載の製造方法。
- 前記加熱体はタングステンから形成されていることを特徴とする、請求項1〜9のいずれか1項に記載の製造方法。
- 前記絶縁膜はシリコン窒化膜であることを特徴とする、請求項1〜10のいずれか1項に記載の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0028609 | 2005-04-06 | ||
KR1020050028609A KR100721576B1 (ko) | 2005-04-06 | 2005-04-06 | 유기 전계 발광 소자 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006294608A true JP2006294608A (ja) | 2006-10-26 |
JP4955293B2 JP4955293B2 (ja) | 2012-06-20 |
Family
ID=37064282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006102144A Active JP4955293B2 (ja) | 2005-04-06 | 2006-04-03 | 有機電界発光素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8383208B2 (ja) |
JP (1) | JP4955293B2 (ja) |
KR (1) | KR100721576B1 (ja) |
CN (1) | CN100517799C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015101790A (ja) * | 2013-11-21 | 2015-06-04 | アイクストロン、エスイー | 炭素からなるナノ構造の製造装置および方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6134191B2 (ja) * | 2013-04-07 | 2017-05-24 | 村川 惠美 | 回転型セミバッチald装置 |
KR101673016B1 (ko) * | 2013-08-27 | 2016-11-07 | 삼성디스플레이 주식회사 | 박막봉지 제조장치 및 이를 이용한 표시 장치의 제조방법 |
KR102173047B1 (ko) * | 2013-10-10 | 2020-11-03 | 삼성디스플레이 주식회사 | 기상 증착 장치 |
KR101616929B1 (ko) * | 2013-11-25 | 2016-04-29 | 엘지디스플레이 주식회사 | 유기발광 표시장치 제조방법 |
KR102378538B1 (ko) | 2015-08-11 | 2022-03-25 | 삼성디스플레이 주식회사 | 표시 장치의 제조 방법 |
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2005
- 2005-04-06 KR KR1020050028609A patent/KR100721576B1/ko active IP Right Grant
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2006
- 2006-04-03 JP JP2006102144A patent/JP4955293B2/ja active Active
- 2006-04-05 CN CNB2006100726199A patent/CN100517799C/zh active Active
- 2006-04-06 US US11/400,474 patent/US8383208B2/en active Active
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JPS63186876A (ja) * | 1987-01-30 | 1988-08-02 | Hitachi Ltd | プラズマcvd装置 |
JPS6479376A (en) * | 1987-09-21 | 1989-03-24 | Fujitsu Ltd | Thin film forming method |
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JPH051381A (ja) * | 1991-06-21 | 1993-01-08 | Olympus Optical Co Ltd | 立方晶窒化硼素の合成方法 |
JPH06314660A (ja) * | 1993-03-04 | 1994-11-08 | Mitsubishi Electric Corp | 薄膜形成法及びその装置 |
JPH10261487A (ja) * | 1997-03-18 | 1998-09-29 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2001313272A (ja) * | 2000-04-28 | 2001-11-09 | Kyocera Corp | プラズマcvd法およびそれに用いる装置 |
JP2003163082A (ja) * | 2001-11-26 | 2003-06-06 | Tatsuo Morita | 有機el用薄膜製造装置および方法 |
JP2005082888A (ja) * | 2003-09-11 | 2005-03-31 | Tokyo Electron Ltd | 成膜装置 |
Cited By (1)
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JP2015101790A (ja) * | 2013-11-21 | 2015-06-04 | アイクストロン、エスイー | 炭素からなるナノ構造の製造装置および方法 |
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KR100721576B1 (ko) | 2007-05-23 |
CN100517799C (zh) | 2009-07-22 |
US8383208B2 (en) | 2013-02-26 |
JP4955293B2 (ja) | 2012-06-20 |
US20060228827A1 (en) | 2006-10-12 |
KR20060106156A (ko) | 2006-10-12 |
CN1845359A (zh) | 2006-10-11 |
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