JP2006287913A - 固体撮像素子および撮像装置 - Google Patents
固体撮像素子および撮像装置 Download PDFInfo
- Publication number
- JP2006287913A JP2006287913A JP2006025915A JP2006025915A JP2006287913A JP 2006287913 A JP2006287913 A JP 2006287913A JP 2006025915 A JP2006025915 A JP 2006025915A JP 2006025915 A JP2006025915 A JP 2006025915A JP 2006287913 A JP2006287913 A JP 2006287913A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- solid
- signal
- receiving elements
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 55
- 238000012546 transfer Methods 0.000 claims abstract description 140
- 238000012545 processing Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000003086 colorant Substances 0.000 abstract description 3
- 230000005570 vertical transmission Effects 0.000 abstract 1
- 230000000875 corresponding effect Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- 238000007781 pre-processing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 101000860173 Myxococcus xanthus C-factor Proteins 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】CCD固体撮像素子10は、垂直転送路14を一列おきに形成し、垂直転送路14の本数を半分に削減し、この形成による空き領域を受光素子12の感光領域16に利用し感光領域16を広げることにより、高画素化しても信号電荷の十分な生成を可能にし、残した垂直転送路14の左右にそれぞれ位置する受光素子12と垂直転送路14との接する側にトランスファシフトゲート22を配設し残した垂直転送路14を共用して信号電荷を混色なしに垂直転送する。
【選択図】図1
Description
12 受光素子
14 垂直転送路
16 感光領域
22 トランスファゲート
24 水平転送路
26 アンプ
Claims (6)
- 半導体基板上に入射光の光電変換により信号電荷を生成する複数の受光素子が配列され、該配列において、一の行における受光素子の配置間隔は隣接する他の行における受光素子の配置間隔に対して相対的にずれ、該受光素子のそれぞれに蓄積した信号電荷を列方向に転送させる列転送手段と、該列転送手段からの信号電荷を行方向に転送させる行転送手段とを有する固体撮像素子において、
前記列転送手段は、前記受光素子のうちの一列おきの受光素子の一方の側に形成され、
該固体撮像素子は、さらに、前記受光素子に蓄積された信号電荷を前記列転送手段に読み出すゲート手段を有し、
該ゲート手段は、前記列転送手段と接する側に前記受光素子のそれぞれと前記列転送手段との間に形成されることを特徴とする固体撮像素子。 - 請求項1に記載の固体撮像素子において、該固体撮像素子は、同一の行における受光素子の配置間隔を基準にして、前記相対的にずれた配置間隔は前記基準のほぼ1/3ないし1/4の範囲にあることを特徴とする固体撮像素子。
- 請求項1または2に記載の固体撮像素子において、該固体撮像素子は、前記信号電荷を多フィールドで読み出すことを特徴とする固体撮像素子。
- 被写界からの入射光を光電変換して信号電荷を生成する複数の受光素子が配列され、該配列において、一の行における受光素子の配置間隔は隣接する他の行における受光素子の配置間隔に対して相対的にずれ、該受光素子のそれぞれに蓄積した信号電荷を列方向に転送させる列転送手段と、該列転送手段からの信号電荷を行方向に転送させる行転送手段とを含む固体撮像素子、該固体撮像素子を駆動させる駆動信号を生成し、該固体撮像素子に供給する駆動手段、該駆動手段に前記駆動信号の動作タイミングを持たせるタイミング生成手段、該タイミング生成手段の動作を制御する制御手段、該制御手段に動作を指示する操作手段、および前記固体撮像素子が出力する信号に信号処理を施す信号処理手段を含む撮像装置において、
前記列転送手段は、前記受光素子のうちの一列おきの受光素子の一方の側に形成され、
該固体撮像素子は、さらに、前記受光素子に蓄積された信号電荷を前記列転送手段に読み出すゲート手段を有し、
該ゲート手段は、前記列転送手段と接する側に前記受光素子のそれぞれと前記列転送手段との間に形成されることを特徴とする撮像装置。 - 請求項4に記載の装置において、前記固体撮像素子は、同一の行における受光素子の配置間隔を基準にして、前記相対的にずれた配置間隔は前記基準のほぼ1/3ないし1/4の範囲にあることを特徴とする撮像装置。
- 請求項4または5に記載の装置において、前記固体撮像素子は、前記信号電荷を多フィールドで読み出すことを特徴とする撮像装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006025915A JP4630200B2 (ja) | 2005-03-07 | 2006-02-02 | 固体撮像素子および撮像装置 |
US11/354,081 US20060197859A1 (en) | 2005-03-07 | 2006-02-15 | Solid-state image sensor having its photosensitive cells broadened in area |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005061905 | 2005-03-07 | ||
JP2006025915A JP4630200B2 (ja) | 2005-03-07 | 2006-02-02 | 固体撮像素子および撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006287913A true JP2006287913A (ja) | 2006-10-19 |
JP4630200B2 JP4630200B2 (ja) | 2011-02-09 |
Family
ID=36943747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006025915A Expired - Fee Related JP4630200B2 (ja) | 2005-03-07 | 2006-02-02 | 固体撮像素子および撮像装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060197859A1 (ja) |
JP (1) | JP4630200B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010123707A (ja) * | 2008-11-19 | 2010-06-03 | Sony Corp | 固体撮像装置およびその読み出し方法 |
CN104900667B (zh) * | 2015-05-06 | 2018-03-02 | 南京大学 | 一种基于复合介质栅mosfet的多模态双晶体管光敏探测器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001057420A (ja) * | 1999-08-18 | 2001-02-27 | Fuji Film Microdevices Co Ltd | 固体撮像素子およびその読み出し方法 |
JP2001057419A (ja) * | 1999-08-18 | 2001-02-27 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその制御方法 |
JP2001168315A (ja) * | 1999-09-27 | 2001-06-22 | Fuji Film Microdevices Co Ltd | 固体撮像装置 |
JP2004104516A (ja) * | 2002-09-10 | 2004-04-02 | Nikon Corp | 撮像装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4720746A (en) * | 1985-08-05 | 1988-01-19 | Eastman Kodak Company | Frame transfer CCD area image sensor with improved horizontal resolution |
US5043821A (en) * | 1988-08-31 | 1991-08-27 | Canon Kabushiki Kaisha | Image pickup device having a frame-size memory |
JPH06205298A (ja) * | 1992-11-06 | 1994-07-22 | Sharp Corp | 電荷結合型固体撮像装置 |
US5668597A (en) * | 1994-12-30 | 1997-09-16 | Eastman Kodak Company | Electronic camera with rapid automatic focus of an image upon a progressive scan image sensor |
US5602391A (en) * | 1995-02-23 | 1997-02-11 | Hughes Electronics | Quincunx sampling grid for staring array |
US6023315A (en) * | 1995-07-04 | 2000-02-08 | Sharp Kabushiki Kaisha | Spatial light modulator and directional display |
JP3830590B2 (ja) * | 1996-10-30 | 2006-10-04 | 株式会社東芝 | 固体撮像装置 |
JPH10170980A (ja) * | 1996-12-12 | 1998-06-26 | Fuji Photo Optical Co Ltd | 中判カメラ |
JP4054094B2 (ja) * | 1996-12-27 | 2008-02-27 | オリンパス株式会社 | 電子内視鏡 |
US6437307B1 (en) * | 1997-09-12 | 2002-08-20 | Fraunhofer-Gesellschaft Zur Forderung Zur Angewandten Forshung E.V. | Image detection member and assembly of image detection members |
US6822682B1 (en) * | 1999-08-18 | 2004-11-23 | Fuji Photo Film Co., Ltd. | Solid state image pickup device and its read method |
US6933976B1 (en) * | 1999-09-03 | 2005-08-23 | Fuji Photo Film Co., Ltd. | Solid-state image pickup device |
JP4137442B2 (ja) * | 2001-12-28 | 2008-08-20 | 富士フイルム株式会社 | 固体撮像装置とそのスミア電荷除去方法並びにデジタルスチルカメラ |
JP2003319408A (ja) * | 2002-04-26 | 2003-11-07 | Seiko Epson Corp | カラーエリアセンサ及び撮像回路 |
-
2006
- 2006-02-02 JP JP2006025915A patent/JP4630200B2/ja not_active Expired - Fee Related
- 2006-02-15 US US11/354,081 patent/US20060197859A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001057420A (ja) * | 1999-08-18 | 2001-02-27 | Fuji Film Microdevices Co Ltd | 固体撮像素子およびその読み出し方法 |
JP2001057419A (ja) * | 1999-08-18 | 2001-02-27 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその制御方法 |
JP2001168315A (ja) * | 1999-09-27 | 2001-06-22 | Fuji Film Microdevices Co Ltd | 固体撮像装置 |
JP2004104516A (ja) * | 2002-09-10 | 2004-04-02 | Nikon Corp | 撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4630200B2 (ja) | 2011-02-09 |
US20060197859A1 (en) | 2006-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5241355B2 (ja) | 撮像装置とその制御方法 | |
JP5739640B2 (ja) | 撮像素子及び撮像装置 | |
JP5207853B2 (ja) | 静止画像及び動画像撮像装置 | |
JP5034840B2 (ja) | 固体撮像装置及びこれを用いた電子カメラ | |
JP2009159186A (ja) | 撮像素子の駆動装置、撮像素子の駆動方法、撮像装置、及び撮像素子 | |
JP4639406B2 (ja) | 撮像装置 | |
JP5187039B2 (ja) | 固体撮像装置及びこれを用いた電子カメラ | |
WO2021014999A1 (ja) | 固体撮像装置およびその駆動方法、並びに電子機器 | |
JP4317117B2 (ja) | 固体撮像装置および撮像方法 | |
JP2009021985A (ja) | 撮像装置及び撮像装置の駆動方法 | |
JP6296767B2 (ja) | 撮像装置及び画像信号処理方法 | |
JP4630200B2 (ja) | 固体撮像素子および撮像装置 | |
JP3943273B2 (ja) | 固体撮像装置および信号読出し方法 | |
JP2007135073A (ja) | 固体撮像装置 | |
JP2000224599A (ja) | 固体撮像装置および信号読出し方法 | |
JP2008270832A (ja) | 固体撮像素子及び撮像装置 | |
JP2006304248A (ja) | 固体撮像素子およびその駆動方法 | |
CN100446547C (zh) | 具有扩大面积的光电管的固态图像传感器 | |
JP2006287912A (ja) | 固体撮像素子および撮像装置 | |
JP2007124174A (ja) | 固体撮像装置および固体撮像素子の駆動制御方法 | |
JP4015964B2 (ja) | デジタルカメラ | |
JP2005303653A (ja) | 撮像装置 | |
JP2002199266A (ja) | ディジタル・カメラおよびその動作制御方法 | |
JP2000286408A (ja) | 固体撮像装置および信号読出し方法 | |
JP3965146B2 (ja) | 電子的撮像装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20061211 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080717 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100805 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100907 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100929 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101019 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101112 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131119 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |