JP2006287227A - 集積回路デバイスにおける反りの制御 - Google Patents
集積回路デバイスにおける反りの制御 Download PDFInfo
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- JP2006287227A JP2006287227A JP2006096225A JP2006096225A JP2006287227A JP 2006287227 A JP2006287227 A JP 2006287227A JP 2006096225 A JP2006096225 A JP 2006096225A JP 2006096225 A JP2006096225 A JP 2006096225A JP 2006287227 A JP2006287227 A JP 2006287227A
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- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 41
- 239000000463 material Substances 0.000 description 17
- 239000010949 copper Substances 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 14
- 229910000881 Cu alloy Inorganic materials 0.000 description 11
- 230000008602 contraction Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】一態様では、集積回路デバイスは、ベース506と、ベース506に取り付けた少なくとも1つのダイ502、504と、ベース506の少なくとも片面の少なくとも一部分上にあり、ベース506とダイ502、504の間に存在する熱膨張の差の少なくとも一部分を補償するようになされた、カウンターバランス層508とを含む。他の態様では、ベース506に取り付けた少なくとも一つのダイ502、504を含むこのデバイスの反りが、ベース506とダイ502、504の間に存在する熱膨張の差の少なくとも一部分を補償するようになされたカウンターバランス層508を、ベース506の少なくとも片面の少なくとも一部分に付着することによって制御される。
【選択図】図5
Description
工程206で、ダイ212および214が、ベース208のカウンターバランス層210とは反対側の面に半田付けされる。図2に示すように、ダイ212および214は、ベース208のカウンターバランス層210とは反対側の面に取り付けられている。
例えば、図8の説明に関連して前述したように、図9のグラフは、ある程度の大きさの反りは、異なるベース組成を選択するだけで防ぐことができることを示す。具体的には、図9のグラフは、同じ厚さ、例えば1.63mm(64mil)のCu合金を比較した場合、C110を含むベースが、C151を含むベースより反りが大きいことを示す。さらにC151を含むベースの厚さを、例えば1.88mm(74mil)に増加することによって、受ける反りの大きさが減少する。
Claims (10)
- ベースと、
前記ベースに取り付けられた少なくとも1つのダイと、
少なくともベースの片面の少なくとも一部分上にあり、前記ベースと前記ダイの間に存在する熱膨張の差の少なくとも一部分を補償するようになされた、カウンターバランス層とを含む、集積回路デバイス。 - パワー・トランジスタ・デバイスを含む、請求項1に記載のデバイス。
- 前記熱膨張の差が、前記ダイを前記ベースに取り付ける間に発生する熱の結果として生じる、請求項1に記載のデバイス。
- 前記ダイが、半田付けによって前記ベースに取り付けられる、請求項1に記載のデバイス。
- 前記ベースと前記ダイの間の前記熱膨張の差が、少なくとも部分的に、前記ベースが前記ダイと異なる熱膨張係数を有することに起因する、請求項1に記載のデバイス。
- 少なくともその一面に凹部を有し、または前記層の全厚を貫通して延びる開口部を有する前記カウンターバランス層がセグメント化され、各セグメントの長手方向が反りの方向に平行に延びる、請求項1に記載のデバイス。
- 前記ベースの少なくとも一面のほぼ全体を覆って延びる連続的な層として、前記カウンターバランス層が付着される、請求項1に記載のデバイス。
- 前記カウンターバランス層が、前記ダイとは反対側の前記ベースの一面に付着される、請求項1に記載のデバイス。
- ベースに取り付けた少なくとも1つのダイを含むパワー・トランジスタ・デバイスの反りを制御する方法であって、前記ベースと前記ダイの間に存在する熱膨張の差を少なくとも部分的に補償するようになされた前記ベースの少なくとも片面の少なくとも一部分にカウンターバランス層を付着する工程を含む方法。
- 前記カウンターバランス層の熱膨張特性に影響を及ぼすために、前記カウンターバランス層の1つまたは複数の組成および厚さを変更する工程、あるいは前記変更された層の熱膨張特性に影響を及ぼすために前記ベースの1つまたは複数の組成および厚さを変更する工程をさらに含む、請求項9の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/095929 | 2005-03-31 | ||
US11/095,929 US7408246B2 (en) | 2005-03-31 | 2005-03-31 | Controlling warping in integrated circuit devices |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006287227A true JP2006287227A (ja) | 2006-10-19 |
JP2006287227A5 JP2006287227A5 (ja) | 2008-05-08 |
JP5657188B2 JP5657188B2 (ja) | 2015-01-21 |
Family
ID=37069337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006096225A Active JP5657188B2 (ja) | 2005-03-31 | 2006-03-31 | 集積回路デバイスにおける反りの制御 |
Country Status (3)
Country | Link |
---|---|
US (4) | US7408246B2 (ja) |
JP (1) | JP5657188B2 (ja) |
KR (2) | KR20060105607A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011249576A (ja) * | 2010-05-27 | 2011-12-08 | Kobe Steel Ltd | ダイヤモンド・アルミニウム接合体及びその製造方法 |
WO2024101163A1 (ja) * | 2022-11-08 | 2024-05-16 | 日本碍子株式会社 | 電気化学セル |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101273450A (zh) * | 2005-09-28 | 2008-09-24 | 日本碍子株式会社 | 散热模块及其制造方法 |
US20130308274A1 (en) * | 2012-05-21 | 2013-11-21 | Triquint Semiconductor, Inc. | Thermal spreader having graduated thermal expansion parameters |
US9028628B2 (en) | 2013-03-14 | 2015-05-12 | International Business Machines Corporation | Wafer-to-wafer oxide fusion bonding |
US9058974B2 (en) | 2013-06-03 | 2015-06-16 | International Business Machines Corporation | Distorting donor wafer to corresponding distortion of host wafer |
KR20170054958A (ko) * | 2015-11-10 | 2017-05-18 | 주식회사 기가레인 | 고주파 전력 증폭기 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5339742B2 (ja) | 1971-11-08 | 1978-10-23 | ||
JPS63261863A (ja) * | 1987-04-20 | 1988-10-28 | Hitachi Cable Ltd | 表面実装用基板 |
JPH08222658A (ja) * | 1995-02-17 | 1996-08-30 | Sumitomo Electric Ind Ltd | 半導体素子用パッケージ及びその製造方法 |
JPH1079405A (ja) | 1996-09-04 | 1998-03-24 | Hitachi Ltd | 半導体装置およびそれが実装された電子部品 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10163386A (ja) * | 1996-12-03 | 1998-06-19 | Toshiba Corp | 半導体装置、半導体パッケージおよび実装回路装置 |
US6291899B1 (en) * | 1999-02-16 | 2001-09-18 | Micron Technology, Inc. | Method and apparatus for reducing BGA warpage caused by encapsulation |
US6696748B1 (en) * | 2002-08-23 | 2004-02-24 | Micron Technology, Inc. | Stress balanced semiconductor packages, method of fabrication and modified mold segment |
US7164200B2 (en) * | 2004-02-27 | 2007-01-16 | Agere Systems Inc. | Techniques for reducing bowing in power transistor devices |
-
2005
- 2005-03-31 US US11/095,929 patent/US7408246B2/en active Active
-
2006
- 2006-03-30 KR KR1020060029103A patent/KR20060105607A/ko active Application Filing
- 2006-03-31 JP JP2006096225A patent/JP5657188B2/ja active Active
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2008
- 2008-06-27 US US12/163,453 patent/US7598602B2/en active Active
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2009
- 2009-08-24 US US12/546,083 patent/US7923347B2/en active Active
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2011
- 2011-03-07 US US13/041,674 patent/US8133799B2/en active Active
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2013
- 2013-08-02 KR KR1020130092155A patent/KR20130100074A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5339742B2 (ja) | 1971-11-08 | 1978-10-23 | ||
JPS63261863A (ja) * | 1987-04-20 | 1988-10-28 | Hitachi Cable Ltd | 表面実装用基板 |
JPH08222658A (ja) * | 1995-02-17 | 1996-08-30 | Sumitomo Electric Ind Ltd | 半導体素子用パッケージ及びその製造方法 |
JPH1079405A (ja) | 1996-09-04 | 1998-03-24 | Hitachi Ltd | 半導体装置およびそれが実装された電子部品 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011249576A (ja) * | 2010-05-27 | 2011-12-08 | Kobe Steel Ltd | ダイヤモンド・アルミニウム接合体及びその製造方法 |
WO2024101163A1 (ja) * | 2022-11-08 | 2024-05-16 | 日本碍子株式会社 | 電気化学セル |
Also Published As
Publication number | Publication date |
---|---|
US7598602B2 (en) | 2009-10-06 |
US20110250742A1 (en) | 2011-10-13 |
US7408246B2 (en) | 2008-08-05 |
US20080258275A1 (en) | 2008-10-23 |
KR20130100074A (ko) | 2013-09-09 |
US20060220194A1 (en) | 2006-10-05 |
US7923347B2 (en) | 2011-04-12 |
US20090311853A1 (en) | 2009-12-17 |
KR20060105607A (ko) | 2006-10-11 |
JP5657188B2 (ja) | 2015-01-21 |
US8133799B2 (en) | 2012-03-13 |
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