JP2006286536A5 - - Google Patents

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Publication number
JP2006286536A5
JP2006286536A5 JP2005107843A JP2005107843A JP2006286536A5 JP 2006286536 A5 JP2006286536 A5 JP 2006286536A5 JP 2005107843 A JP2005107843 A JP 2005107843A JP 2005107843 A JP2005107843 A JP 2005107843A JP 2006286536 A5 JP2006286536 A5 JP 2006286536A5
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JP
Japan
Prior art keywords
antenna
plasma generation
generation chamber
inductively coupled
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005107843A
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English (en)
Japanese (ja)
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JP2006286536A (ja
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Publication date
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Priority to JP2005107843A priority Critical patent/JP2006286536A/ja
Priority claimed from JP2005107843A external-priority patent/JP2006286536A/ja
Publication of JP2006286536A publication Critical patent/JP2006286536A/ja
Publication of JP2006286536A5 publication Critical patent/JP2006286536A5/ja
Withdrawn legal-status Critical Current

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JP2005107843A 2005-04-04 2005-04-04 プラズマ生成方法、誘導結合型プラズマ源、およびプラズマ処理装置 Withdrawn JP2006286536A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005107843A JP2006286536A (ja) 2005-04-04 2005-04-04 プラズマ生成方法、誘導結合型プラズマ源、およびプラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005107843A JP2006286536A (ja) 2005-04-04 2005-04-04 プラズマ生成方法、誘導結合型プラズマ源、およびプラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2006286536A JP2006286536A (ja) 2006-10-19
JP2006286536A5 true JP2006286536A5 (https=) 2008-05-15

Family

ID=37408207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005107843A Withdrawn JP2006286536A (ja) 2005-04-04 2005-04-04 プラズマ生成方法、誘導結合型プラズマ源、およびプラズマ処理装置

Country Status (1)

Country Link
JP (1) JP2006286536A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4997925B2 (ja) * 2006-11-08 2012-08-15 日新電機株式会社 シリコンドット形成方法及び装置並びにシリコンドット及び絶縁膜付き基板の形成方法及び装置
JP4946456B2 (ja) * 2007-01-24 2012-06-06 パナソニック株式会社 大気圧プラズマ発生方法及び装置
JP2009290025A (ja) * 2008-05-29 2009-12-10 Tohoku Univ 中性粒子照射型ｃｖｄ装置
JP5584412B2 (ja) * 2008-12-26 2014-09-03 株式会社メイコー プラズマ処理装置
JP2012248578A (ja) * 2011-05-25 2012-12-13 Ulvac Japan Ltd プラズマエッチング装置
JP6023994B2 (ja) * 2011-08-15 2016-11-09 Ｎｌｔテクノロジー株式会社 薄膜デバイス及びその製造方法
US10187966B2 (en) * 2015-07-24 2019-01-22 Applied Materials, Inc. Method and apparatus for gas abatement
JP6889043B2 (ja) * 2017-06-15 2021-06-18 株式会社アルバック プラズマ処理装置
WO2022250145A1 (ja) 2021-05-27 2022-12-01 旭化成株式会社 プラズマ発生装置、プラズマ処理装置およびシームレスローラモールド用プラズマエッチング装置

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