JP2006261369A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
【解決手段】 ボンディングパッド11と、不透水性層13とを具備する半導体装置であって、
前記不透水性層13は縦壁状に構成されたものであり、
前記縦壁状の不透水性層13の上に前記ボンディングパッド11が設けられてなる。
【選択図】 図1
Description
Interconnect Technology Conference 1998には、低誘電率層間膜を適用した埋込み配線プロセスによる多層配線構造が示されている。埋込み配線プロセスとは層間膜となる絶縁層に配線溝や接続孔を形成し、その中に金属配線を埋め込むことにより配線構造を形成するものである。そして、従来の埋込み配線プロセスによる多層配線構造のダイシングライン部の構造では、ダイシングライン部の切断面に層間絶縁膜を構成している低誘電率膜が露出している。この低誘電率膜を構成している低誘電率材料は、密度が小さく、ポーラスな構造である為、膜中に外気からの水が侵入し易い。特に、ダイシング時には外部から内部に水が侵入する恐れが高い。従って、ダイシングライン部の露出した低誘電率膜の切断端面を通って、外気中の水が半導体装置の内部に侵入し、半導体装置に内在するトランジスタ素子の特性変動を引き起こしたり、金属配線を腐食すると言った問題点が有る。
前記不透水性層は縦壁状に構成されたものであり、
前記縦壁状の不透水性層の上に前記ボンディングパッドが設けられてなる
ことを特徴とする半導体装置によって解決される。
前記不透水性層は縦壁状に構成されたものであり、
前記縦壁状の不透水性層は絶縁層を遮るように設けられ、
前記縦壁状の不透水性層の上に前記ボンディングパッドが設けられてなる
ことを特徴とする半導体装置によって解決される。
La/Lb ボンディング時における剥離現象の発生率
0 5/100
0.1 2/100
0.3 0/100
0.5 0/100
1.0 0/100
1.2 0/100
1.5 0/100
尚、上記の実施の形態では、不透水性バリア膜13は、Si基板1表面からバリア膜9の間に亘って縦壁状に設けられたものであるが、Si基板1に埋め込まれるような形態であっても良い。又、水の侵入が問題なければ、Si基板1より上の層までであっても良い。又、不透水性バリア膜13は一重のものであったが、二重、三重(図5参照)に重なった形態のものでも良い。そして、このような複数が重なった形態のものにあっては、各々の厚さの総和の値を上記Laとし、この総和になるLaが上記条件を満たすものであれば良い。又、一周に亘って設けられた不透水性バリア膜13は、水の侵入が問題なければ、その途中において、連続性が欠けた不連続なものであっても良い。
2 絶縁膜
3 バリア膜
4 ポーラス状低誘電率膜
5 キャップ膜
6 バリア膜
7 ポーラス状低誘電率膜
8 キャップ膜
9 バリア膜
10 パッシベーション膜
11 ボンディングパッド
13 縦壁状の不透水性バリア膜
代 理 人 宇 高 克 己
Claims (7)
- ボンディングパッドと、不透水性層とを具備する半導体装置であって、
前記不透水性層は縦壁状に構成されたものであり、
前記縦壁状の不透水性層の上に前記ボンディングパッドが設けられてなる
ことを特徴とする半導体装置。 - 縦壁状の不透水性層は絶縁層を遮るように設けられてなることを特徴とする請求項1の半導体装置。
- 縦壁状の不透水性層は半導体装置の周縁部に沿って内側を囲むように設けられたものであることを特徴とする請求項1又は請求項2の半導体装置。
- 不透水性層は機械的強度に富む材料で構成されてなることを特徴とする請求項1〜請求項3いずれかの半導体装置。
- 不透水性層は金属、窒化金属、及び炭化金属の群の中から選ばれる何れかの材料で構成されてなることを特徴とする請求項1〜請求項4いずれかの半導体装置。
- 不透水性層が複数設けられてなることを特徴とする請求項1〜請求項5いずれかの半導体装置。
- 縦壁状の不透水性層の幅Laとボンディングパッドの幅Lbとの比(La/Lb)が0.1以上であるよう構成されてなることを特徴とする請求項1〜請求項6いずれかの半導体装置。
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JP2005076461A JP4596464B2 (ja) | 2005-03-17 | 2005-03-17 | 半導体装置 |
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JP4596464B2 JP4596464B2 (ja) | 2010-12-08 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0366123A (ja) * | 1989-08-03 | 1991-03-20 | Hitachi Ltd | 半導体集積回路装置及びその形成方法 |
JPH08293523A (ja) * | 1995-02-21 | 1996-11-05 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2000269219A (ja) * | 1999-03-19 | 2000-09-29 | Fujitsu Ltd | 半導体装置 |
JP2001267323A (ja) * | 2000-03-21 | 2001-09-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
-
2005
- 2005-03-17 JP JP2005076461A patent/JP4596464B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0366123A (ja) * | 1989-08-03 | 1991-03-20 | Hitachi Ltd | 半導体集積回路装置及びその形成方法 |
JPH08293523A (ja) * | 1995-02-21 | 1996-11-05 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2000269219A (ja) * | 1999-03-19 | 2000-09-29 | Fujitsu Ltd | 半導体装置 |
JP2001267323A (ja) * | 2000-03-21 | 2001-09-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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