JP2006237593A5 - - Google Patents
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- Publication number
- JP2006237593A5 JP2006237593A5 JP2006020105A JP2006020105A JP2006237593A5 JP 2006237593 A5 JP2006237593 A5 JP 2006237593A5 JP 2006020105 A JP2006020105 A JP 2006020105A JP 2006020105 A JP2006020105 A JP 2006020105A JP 2006237593 A5 JP2006237593 A5 JP 2006237593A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- conductive layer
- transistor
- convex portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006020105A JP2006237593A (ja) | 2005-01-31 | 2006-01-30 | 記憶装置および半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005024596 | 2005-01-31 | ||
| JP2006020105A JP2006237593A (ja) | 2005-01-31 | 2006-01-30 | 記憶装置および半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006237593A JP2006237593A (ja) | 2006-09-07 |
| JP2006237593A5 true JP2006237593A5 (cg-RX-API-DMAC7.html) | 2009-01-29 |
Family
ID=37044842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006020105A Withdrawn JP2006237593A (ja) | 2005-01-31 | 2006-01-30 | 記憶装置および半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006237593A (cg-RX-API-DMAC7.html) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101165937A (zh) * | 2006-10-18 | 2008-04-23 | 清华大学 | 有机复合物p-n结及其制备方法以及应用该p-n结的有机复合物二极管 |
| EP2076924B1 (en) * | 2006-11-17 | 2017-03-08 | Semiconductor Energy Laboratory Co, Ltd. | Unerasable memory element and method for manufacturing the same |
| US8283724B2 (en) | 2007-02-26 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device, and method for manufacturing the same |
| JP2009016368A (ja) * | 2007-06-29 | 2009-01-22 | Ricoh Co Ltd | メモリーデバイス |
| JP2010251630A (ja) * | 2009-04-20 | 2010-11-04 | Toppan Printing Co Ltd | 情報記録素子及び情報記録装置並びにその製造方法 |
| WO2011102233A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN103165471A (zh) * | 2013-02-19 | 2013-06-19 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法和显示装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0442960A (ja) * | 1990-06-06 | 1992-02-13 | Matsushita Electron Corp | 半導体集積回路のプログラマブル素子 |
| JP2001189431A (ja) * | 1999-12-28 | 2001-07-10 | Seiko Epson Corp | メモリのセル構造及びメモリデバイス |
| DE10045192A1 (de) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
| JP2003068854A (ja) * | 2001-08-23 | 2003-03-07 | Seiko Epson Corp | 配線間接続方法、配線間接続部材及びその製造方法 |
| TWI233204B (en) * | 2002-07-26 | 2005-05-21 | Infineon Technologies Ag | Nonvolatile memory element and associated production methods and memory element arrangements |
| JP4393859B2 (ja) * | 2002-12-27 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 記録媒体の作製方法 |
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2006
- 2006-01-30 JP JP2006020105A patent/JP2006237593A/ja not_active Withdrawn