JP2006237564A5 - - Google Patents

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Publication number
JP2006237564A5
JP2006237564A5 JP2005354478A JP2005354478A JP2006237564A5 JP 2006237564 A5 JP2006237564 A5 JP 2006237564A5 JP 2005354478 A JP2005354478 A JP 2005354478A JP 2005354478 A JP2005354478 A JP 2005354478A JP 2006237564 A5 JP2006237564 A5 JP 2006237564A5
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JP
Japan
Prior art keywords
semiconductor
semiconductor region
insulating film
element isolation
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005354478A
Other languages
English (en)
Japanese (ja)
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JP2006237564A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005354478A priority Critical patent/JP2006237564A/ja
Priority claimed from JP2005354478A external-priority patent/JP2006237564A/ja
Priority to TW095101851A priority patent/TW200636907A/zh
Priority to KR1020060006168A priority patent/KR20060088023A/ko
Priority to US11/336,874 priority patent/US7432581B2/en
Publication of JP2006237564A publication Critical patent/JP2006237564A/ja
Priority to US12/206,767 priority patent/US20090011568A1/en
Publication of JP2006237564A5 publication Critical patent/JP2006237564A5/ja
Withdrawn legal-status Critical Current

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JP2005354478A 2005-01-31 2005-12-08 半導体装置及びその製造方法並びに半導体集積回路 Withdrawn JP2006237564A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005354478A JP2006237564A (ja) 2005-01-31 2005-12-08 半導体装置及びその製造方法並びに半導体集積回路
TW095101851A TW200636907A (en) 2005-01-31 2006-01-18 Semiconductor device and manufacturing method thereof, and semiconductor integrated circuit
KR1020060006168A KR20060088023A (ko) 2005-01-31 2006-01-20 반도체장치 및 그 제조 방법과 반도체 집적회로
US11/336,874 US7432581B2 (en) 2005-01-31 2006-01-23 Semiconductor device, method of manufacture thereof and semiconductor integrated circuit
US12/206,767 US20090011568A1 (en) 2005-01-31 2008-09-09 Semiconductor device, method of manufacture thereof and semiconductor integrated circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005022806 2005-01-31
JP2005354478A JP2006237564A (ja) 2005-01-31 2005-12-08 半導体装置及びその製造方法並びに半導体集積回路

Publications (2)

Publication Number Publication Date
JP2006237564A JP2006237564A (ja) 2006-09-07
JP2006237564A5 true JP2006237564A5 (enrdf_load_stackoverflow) 2009-01-22

Family

ID=36755625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005354478A Withdrawn JP2006237564A (ja) 2005-01-31 2005-12-08 半導体装置及びその製造方法並びに半導体集積回路

Country Status (4)

Country Link
US (2) US7432581B2 (enrdf_load_stackoverflow)
JP (1) JP2006237564A (enrdf_load_stackoverflow)
KR (1) KR20060088023A (enrdf_load_stackoverflow)
TW (1) TW200636907A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520435B2 (ja) * 2007-05-11 2014-06-11 ラピスセミコンダクタ株式会社 半導体素子の製造方法
FR2968128B1 (fr) * 2010-11-26 2013-01-04 St Microelectronics Sa Cellule precaracterisee pour circuit intégré
US9318607B2 (en) * 2013-07-12 2016-04-19 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
KR102101836B1 (ko) 2014-07-24 2020-04-17 삼성전자 주식회사 딜레이 셀 및 이를 적용하는 지연 동기 루프 회로와 위상 동기 루프 회로
JP7228020B2 (ja) * 2017-11-14 2023-02-22 ルネサスエレクトロニクス株式会社 半導体装置
KR20220128040A (ko) * 2021-03-12 2022-09-20 삼성전자주식회사 반도체 장치
US12205894B2 (en) 2022-03-17 2025-01-21 Macronix International Co., Ltd. Routing pattern
TWI848274B (zh) * 2022-03-17 2024-07-11 旺宏電子股份有限公司 佈線圖案

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740958B2 (en) * 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device
US5452251A (en) * 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
JP3173268B2 (ja) * 1994-01-06 2001-06-04 富士電機株式会社 Ｍｉｓ電界効果トランジスタを備えた半導体装置
US5702957A (en) * 1996-09-20 1997-12-30 Lsi Logic Corporation Method of making buried metallization structure
JP4278202B2 (ja) 1998-03-27 2009-06-10 株式会社ルネサステクノロジ 半導体装置の設計方法、半導体装置及び記録媒体
JP4540146B2 (ja) 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
TW498435B (en) * 2000-08-15 2002-08-11 Hitachi Ltd Method of producing semiconductor integrated circuit device and method of producing multi-chip module
US6627484B1 (en) * 2000-11-13 2003-09-30 Advanced Micro Devices, Inc. Method of forming a buried interconnect on a semiconductor on insulator wafer and a device including a buried interconnect
KR100672932B1 (ko) 2000-12-26 2007-01-23 삼성전자주식회사 실리콘 온 인슐레이터 트랜지스터 및 그 제조방법
US6800902B2 (en) * 2001-02-16 2004-10-05 Canon Kabushiki Kaisha Semiconductor device, method of manufacturing the same and liquid jet apparatus
JP4154578B2 (ja) 2002-12-06 2008-09-24 日本電気株式会社 半導体装置及びその製造方法
JP3809168B2 (ja) * 2004-02-03 2006-08-16 株式会社東芝 半導体モジュール
JP4814705B2 (ja) * 2005-10-13 2011-11-16 パナソニック株式会社 半導体集積回路装置及び電子装置
JP2007208004A (ja) * 2006-02-01 2007-08-16 Matsushita Electric Ind Co Ltd 半導体集積回路装置及び電子装置

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