JP2006233283A - ウエハホルダ - Google Patents
ウエハホルダ Download PDFInfo
- Publication number
- JP2006233283A JP2006233283A JP2005050064A JP2005050064A JP2006233283A JP 2006233283 A JP2006233283 A JP 2006233283A JP 2005050064 A JP2005050064 A JP 2005050064A JP 2005050064 A JP2005050064 A JP 2005050064A JP 2006233283 A JP2006233283 A JP 2006233283A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafer stage
- outer ring
- diameter
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 230000007717 exclusion Effects 0.000 abstract description 16
- 238000011109 contamination Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000000873 masking effect Effects 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000009304 pastoral farming Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 210000002304 esc Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】 ウエハステージと、このウエハステージを取り囲むウエハステージ外側リングとを有するウエハホルダであって、前記ウエハステージは、その上に載置されるウエハの直径よりも小さい直径を有し、前記ウエハステージ外側リングは、前記ウエハステージ上に載置されるウエハの直径よりも大きい内径をその上側に有し、外側リングの上面は、前記ウエハステージ上に載置されるウエハの上面よりも上側に位置するウエハホルダ。
【選択図】図1
Description
ウエハステージ外側リング2は2つの異なる内径を有している。一方は外側リング2の上側にある内径であり、他方は外側リング2の下側にある内径である。外側リング2の上側の内径は、数ミリメートル、例えば4mmであり、ウエハ5の直径よりも大きい。一方、外側リング2の下側の内径は、数ミリメートル、例えば3mmであり、ウエハ5の直径よりも小さいが、ウエハステージ1の直径よりは大きい。すなわち、外側リング2の上側の内径はウエハ5の直径よりも大きく、一方、外側リング2の下側の内径は、ウエハ5の直径よりも小さいが、ウエハステージ1の直径よりは大きい。
ウエハステージ外側リング2の外径は、重要ではなく、一般にウエハ5の直径よりも10〜30mm大きい。
期待する結果を得るためには、外側リング2の上面の高さが重要となる。外側リング2の上面は、図1〜図3に示されるようにウエハ5の上面よりも僅かに上側になければならない。図2および図3に文字H(参照符号14で示されている)で示される外側リング2の上面とウエハ5の上面との間の距離により、ウエハの縁部周囲のエッジエクスクルージョン(EE)およびラッピングフィルムが影響を受ける。この距離Hを1mm〜10mmの範囲内に維持することが好ましい。
図2に示されるように、位置A(15)では、ウエハ縁部まで膜が堆積する。ターゲット11から最も離れている位置A(15)における原子経路が矢印8で示されている。原子12は、図1に示されるようにターゲット11がウエハ5に対して配置されている角度でやってくる。
位置B(16)における蒸着プロセスが図3に示されている。
2 外側リング
3 絶縁ブロック
4 外側シールド
5 ウエハ
6 外側シールドと外側リングとの間の狭い空間
7 外側リングとウエハステージとの間の狭い空間
8 原子の経路
9 気相衝突後に入ってくる原子の経路
10 ウエハの裏面と外側リングとの間の間隙
11 ターゲット
12 原子
13 シャフト
14 (高さ)H
15 位置A
16 位置B
17 真空ポート
18 ウエハ搬入/搬出ポート
19 金属ディスク
20 絶縁ディスク
21 金属ディスク
25 ウエハホルダ
51 ウエハステージ
52 絶縁誘電ブロック
53 金属外側シールド
54 シャフト
55 金属ピンまたは絶縁ピン
56 昇降ピン
57 ウエハ
58 ターゲット
59 位置A
60 位置B
61 原子
62 ウエハ縁部
63 x
64 y
65 昇降ピンコントローラ
66 真空ポート
67 ウエハ搬入/搬出ポート
Claims (4)
- ウエハステージと、このウエハステージを取り囲むウエハステージ外側リングとを有するウエハホルダであって、
前記ウエハステージは、その上に載置されるウエハの直径よりも小さい直径を有し、
前記ウエハステージ外側リングは、前記ウエハステージ上に載置されるウエハの直径よりも大きい内径を当該外側リングの上側に有し、
前記ウエハステージ外側リングの上面は、前記ウエハステージ上に載置されるウエハの上面よりも上側に位置する、
ウエハホルダ。 - 前記ウエハステージ外側リングは、ウエハの直径よりも小さいが前記ウエハステージの直径よりも大きい内径を当該外側リングの下側に更に有している請求項1に記載のウエハホルダ。
- 前記ウエハステージ外側リングは、外側リングの上側の内径を規定する一方の内周壁と外側リングの下側の内径を規定する他方の内周壁との間に形成された水平面を有し、
前記水平面は、前記ウエハステージ上に載置されるウエハの裏面よりも下側に、ウエハの前記裏面と接触することなく位置している請求項2に記載のウエハホルダ。 - 前記ウエハステージは、その高さを調節するために2以上の別個の部分から成り、それにより、前記ウエハステージの上面と前記ウエハステージ外側リングの上面との間の空間を調整する請求項1ないし請求項3のいずれか1項に記載のウエハホルダ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005050064A JP4336320B2 (ja) | 2005-02-25 | 2005-02-25 | ウエハホルダ |
US11/307,284 US20060281314A1 (en) | 2005-02-25 | 2006-01-30 | Wafer Holder And Method Of Holding A Wafer |
TW095104424A TWI316744B (en) | 2005-02-25 | 2006-02-09 | Wafer holder |
KR1020060013967A KR101089766B1 (ko) | 2005-02-25 | 2006-02-14 | 웨이퍼 홀더 |
EP06290313A EP1696470A3 (en) | 2005-02-25 | 2006-02-24 | Wafer holder and method of holding a wafer |
CN2006100514176A CN1825556B (zh) | 2005-02-25 | 2006-02-24 | 晶片支架 |
US13/169,831 US8986522B2 (en) | 2005-02-25 | 2011-06-27 | Angled sputtering physical vapor deposition apparatus with wafer holder and wafer holder for an angled sputtering physical vapor deposition apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005050064A JP4336320B2 (ja) | 2005-02-25 | 2005-02-25 | ウエハホルダ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006233283A true JP2006233283A (ja) | 2006-09-07 |
JP2006233283A5 JP2006233283A5 (ja) | 2008-09-11 |
JP4336320B2 JP4336320B2 (ja) | 2009-09-30 |
Family
ID=36190762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005050064A Active JP4336320B2 (ja) | 2005-02-25 | 2005-02-25 | ウエハホルダ |
Country Status (6)
Country | Link |
---|---|
US (2) | US20060281314A1 (ja) |
EP (1) | EP1696470A3 (ja) |
JP (1) | JP4336320B2 (ja) |
KR (1) | KR101089766B1 (ja) |
CN (1) | CN1825556B (ja) |
TW (1) | TWI316744B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009260041A (ja) * | 2008-04-17 | 2009-11-05 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法および成膜装置 |
JP2014070275A (ja) * | 2012-10-02 | 2014-04-21 | Ulvac Japan Ltd | プラズマ処理方法及びプラズマ処理装置 |
US10378100B2 (en) | 2008-06-25 | 2019-08-13 | Canon Anelva Corporation | Sputtering apparatus and recording medium for recording control program thereof |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1777691B (zh) * | 2003-03-21 | 2011-11-23 | 东京毅力科创株式会社 | 用于减少处理过程中基片背部的淀积的方法和装置 |
JP4705816B2 (ja) * | 2005-07-27 | 2011-06-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US20140179108A1 (en) * | 2012-12-21 | 2014-06-26 | Applied Materials, Inc. | Wafer Edge Protection and Efficiency Using Inert Gas and Ring |
CN105185732A (zh) * | 2015-08-24 | 2015-12-23 | 沈阳拓荆科技有限公司 | 一种可改变晶圆表面薄膜形貌的陶瓷环 |
CN118507324A (zh) * | 2019-06-18 | 2024-08-16 | 朗姆研究公司 | 用于衬底处理系统的缩小直径承载环硬件 |
JP7398988B2 (ja) | 2020-03-13 | 2023-12-15 | 東京エレクトロン株式会社 | スパッタ装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4756810A (en) * | 1986-12-04 | 1988-07-12 | Machine Technology, Inc. | Deposition and planarizing methods and apparatus |
JP2737961B2 (ja) | 1988-11-29 | 1998-04-08 | 日本電気株式会社 | スパッタ成膜装置 |
US6544379B2 (en) * | 1993-09-16 | 2003-04-08 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
TW277139B (ja) * | 1993-09-16 | 1996-06-01 | Hitachi Seisakusyo Kk | |
US5529657A (en) * | 1993-10-04 | 1996-06-25 | Tokyo Electron Limited | Plasma processing apparatus |
TW254030B (en) * | 1994-03-18 | 1995-08-11 | Anelva Corp | Mechanic escape mechanism for substrate |
JPH10116964A (ja) * | 1996-10-09 | 1998-05-06 | Oki Electric Ind Co Ltd | 半導体装置とその製造方法およびスパッタリング装置 |
US6146504A (en) * | 1998-05-21 | 2000-11-14 | Applied Materials, Inc. | Substrate support and lift apparatus and method |
US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
JP4559595B2 (ja) * | 2000-07-17 | 2010-10-06 | 東京エレクトロン株式会社 | 被処理体の載置装置及びプラズマ処理装置 |
JP4673478B2 (ja) | 2000-10-05 | 2011-04-20 | キヤノンアネルバ株式会社 | バイアススパッタリング装置及びバイアススパッタリング方法 |
JP4583591B2 (ja) * | 2000-12-15 | 2010-11-17 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
JP4509369B2 (ja) * | 2000-12-26 | 2010-07-21 | キヤノンアネルバ株式会社 | プラズマ支援スパッタ成膜装置 |
US6620736B2 (en) * | 2001-07-24 | 2003-09-16 | Tokyo Electron Limited | Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing |
US6776849B2 (en) * | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
US7175737B2 (en) * | 2002-04-16 | 2007-02-13 | Canon Anelva Corporation | Electrostatic chucking stage and substrate processing apparatus |
CN101996843B (zh) * | 2003-01-07 | 2013-05-01 | 东京毅力科创株式会社 | 等离子体处理装置及聚焦环 |
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
-
2005
- 2005-02-25 JP JP2005050064A patent/JP4336320B2/ja active Active
-
2006
- 2006-01-30 US US11/307,284 patent/US20060281314A1/en not_active Abandoned
- 2006-02-09 TW TW095104424A patent/TWI316744B/zh active
- 2006-02-14 KR KR1020060013967A patent/KR101089766B1/ko active IP Right Grant
- 2006-02-24 CN CN2006100514176A patent/CN1825556B/zh active Active
- 2006-02-24 EP EP06290313A patent/EP1696470A3/en not_active Withdrawn
-
2011
- 2011-06-27 US US13/169,831 patent/US8986522B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009260041A (ja) * | 2008-04-17 | 2009-11-05 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法および成膜装置 |
US10378100B2 (en) | 2008-06-25 | 2019-08-13 | Canon Anelva Corporation | Sputtering apparatus and recording medium for recording control program thereof |
JP2014070275A (ja) * | 2012-10-02 | 2014-04-21 | Ulvac Japan Ltd | プラズマ処理方法及びプラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US20110253048A1 (en) | 2011-10-20 |
EP1696470A2 (en) | 2006-08-30 |
CN1825556A (zh) | 2006-08-30 |
US20060281314A1 (en) | 2006-12-14 |
US8986522B2 (en) | 2015-03-24 |
KR20060094869A (ko) | 2006-08-30 |
EP1696470A3 (en) | 2008-09-10 |
CN1825556B (zh) | 2010-10-13 |
JP4336320B2 (ja) | 2009-09-30 |
TWI316744B (en) | 2009-11-01 |
KR101089766B1 (ko) | 2011-12-08 |
TW200723429A (en) | 2007-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4336320B2 (ja) | ウエハホルダ | |
JP7061918B2 (ja) | プラズマエッチング方法及びプラズマ処理装置 | |
JP6599166B2 (ja) | 差動排気式の反応性ガス注入器 | |
US8592712B2 (en) | Mounting table structure and plasma film forming apparatus | |
JP4879738B2 (ja) | 温度を制御したチャンバシールドの使用によるパーティクルの低減化 | |
US7510634B1 (en) | Apparatus and methods for deposition and/or etch selectivity | |
US9252002B2 (en) | Two piece shutter disk assembly for a substrate process chamber | |
KR102699890B1 (ko) | 자기-중심조정 피쳐를 갖는 2-피스 셔터 디스크 조립체 | |
KR20120004508A (ko) | Pvd 챔버용 스퍼터링 타겟 | |
US11935728B2 (en) | Apparatus and method of manufacturing a semiconductor device | |
US6676812B2 (en) | Alignment mark shielding ring without arcing defect and method for using | |
US6176931B1 (en) | Wafer clamp ring for use in an ionized physical vapor deposition apparatus | |
US20220344133A1 (en) | Method for forming layer | |
JP6871067B2 (ja) | スパッタリング装置 | |
JP5719212B2 (ja) | 成膜方法およびリスパッタ方法、ならびに成膜装置 | |
JP2005264177A (ja) | スパッタリング装置およびスパッタリング装置のアッパシールド位置調整方法 | |
US9711371B2 (en) | Method of etching organic film | |
WO2017018256A1 (ja) | 多層膜をエッチングする方法 | |
CN111118457A (zh) | 用于物理气相沉积的设备以及形成膜层的方法 | |
JPH10176267A (ja) | スパッタ装置 | |
US11443925B2 (en) | Substrate support and plasma processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A072 | Dismissal of procedure [no reply to invitation to correct request for examination] |
Free format text: JAPANESE INTERMEDIATE CODE: A073 Effective date: 20070417 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080724 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20080725 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20080829 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20090122 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20090122 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20090128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090413 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090622 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090626 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120703 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4336320 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120703 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130703 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |