JP2006233257A - Mask holding mechanism, and film deposition apparatus - Google Patents

Mask holding mechanism, and film deposition apparatus Download PDF

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JP2006233257A
JP2006233257A JP2005047813A JP2005047813A JP2006233257A JP 2006233257 A JP2006233257 A JP 2006233257A JP 2005047813 A JP2005047813 A JP 2005047813A JP 2005047813 A JP2005047813 A JP 2005047813A JP 2006233257 A JP2006233257 A JP 2006233257A
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Prior art keywords
mask
chuck
substrate
glass substrate
magnet
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JP4609755B2 (en
Inventor
Tatsuya Kataoka
達哉 片岡
Kenji Nagao
兼次 長尾
Kenichi Saito
謙一 斉藤
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NIPPON BIITEC KK
Mitsui Engineering and Shipbuilding Co Ltd
Choshu Industry Co Ltd
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NIPPON BIITEC KK
Mitsui Engineering and Shipbuilding Co Ltd
Choshu Industry Co Ltd
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Priority to JP2005047813A priority Critical patent/JP4609755B2/en
Priority to CN2006800015782A priority patent/CN101090994B/en
Priority to KR1020077016155A priority patent/KR100884029B1/en
Priority to PCT/JP2006/303189 priority patent/WO2006090747A1/en
Priority to TW095105913A priority patent/TW200639592A/en
Publication of JP2006233257A publication Critical patent/JP2006233257A/en
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Publication of JP4609755B2 publication Critical patent/JP4609755B2/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask holding mechanism to maintain the positional relationship between a mask and a substrate even when the mask is brought close to the substrate, and a film deposition apparatus. <P>SOLUTION: The mask holding mechanism holds a mask 24 to be covered on a substrate which is attached to and held by a chuck 14 of a film deposition apparatus. The mask 24 is formed of a magnetic body, and magnets 16 are arranged in a dot manner on the side opposite to a chuck face to hold the substrate of the chuck 14. The magnets 16 can be arranged at lattice points to form a lattice. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、マスク保持機構および成膜装置に関するものである。   The present invention relates to a mask holding mechanism and a film forming apparatus.

有機ＥＬ（Ｅｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｔ）素子を製造する真空蒸着装置には、底部に有機材料を加熱・蒸発（昇華）させる蒸発源（昇華源）が設けられている。また真空蒸着装置には、蒸発源に対面して配置されたチャックと、チャックの上部に複数配設され、基板表面を被うためのマスクを保持する磁石と、チャックの底面に装着保持させるガラス基板とが設けられている。チャックは、ガラス基板を平面に維持するための平板である。さらに真空蒸着装置には、有機ＥＬ素子のパターンをガラス基板に形成するためのマスクがチャック（ガラス基板）とるつぼの間に設けられている。なおマスクは、磁性体によって形成されている。   2. Description of the Related Art An evaporation source (sublimation source) that heats and evaporates (sublimates) an organic material is provided at the bottom of a vacuum deposition apparatus that manufactures organic EL (Electroluminescent) elements. In addition, the vacuum deposition apparatus includes a chuck disposed facing the evaporation source, a plurality of magnets disposed on the chuck and holding a mask for covering the substrate surface, and a glass mounted and held on the bottom surface of the chuck. And a substrate. The chuck is a flat plate for keeping the glass substrate flat. Further, in the vacuum deposition apparatus, a mask for forming a pattern of the organic EL element on the glass substrate is provided between crucibles for taking the chuck (glass substrate). The mask is made of a magnetic material.

このような真空蒸着装置において、マスクをガラス表面に被せる場合、まずガラス基板をチャックの底面と接触させて装着保持させる。この後、ガラス基板と、このガラス基板の下方に配置されたマスクとを位置合わせし、マスクを上昇させてガラス基板に被せる。そしてマスクは、チャックの上部に配設された磁石の磁力によって保持される。   In such a vacuum deposition apparatus, when the mask is placed on the glass surface, the glass substrate is first placed in contact with the bottom surface of the chuck and held. Thereafter, the glass substrate and the mask disposed below the glass substrate are aligned, and the mask is lifted to cover the glass substrate. The mask is held by the magnetic force of a magnet disposed on the upper part of the chuck.

なおガラス基板の下側に配設されたマスクを、ガラス基板の上側に配設された磁石で保持することについて開示されたものとして、例えば、特許文献１が挙げられる。
特開２００２−７５６３８号公報 Patent document 1 is mentioned as what was indicated about holding a mask arranged under the glass substrate with a magnet arranged above the glass substrate, for example.
JP 2002-75638 A

ところで、マスクをガラス基板の下方に配設する時に、ガラス基板表面との間に隙間が発生する。このため蒸発源で蒸発された有機材料が前記隙間に入り込み、本来遮蔽されるべき部分、すなわち有機ＥＬ素子のパターンが形成されない部分にまで付着することがあった。このため微細な有機ＥＬ素子のパターンをガラス基板表面に精度よく形成することができなかった。   By the way, when the mask is disposed below the glass substrate, a gap is generated between the surface of the glass substrate. For this reason, the organic material evaporated by the evaporation source may enter the gap and adhere to the part that should be shielded, that is, the part where the pattern of the organic EL element is not formed. For this reason, a fine organic EL element pattern could not be formed on the glass substrate surface with high accuracy.

図４は従来技術に係り、マスク装着時におけるマスクの形状の変化を説明する図である。マスクは、所定の開口パターンが形成されているマスクフィルムと、このマスクフィルムの周縁部を保持する枠型のマスクホルダーとを備えた構成である。そしてマスクをガラス基板に近づけると、磁石の磁力がマスク全面に均等にかかることになる。つまりマスク１をガラス基板２に被せる場合、ガラス基板２の下方から徐々に近づけると（Ｓ１）、チャック３の上部に配設された磁石４の磁力によって、マスク１の中央部が上側に急に引っ張られてガラス基板２を被い（Ｓ２）、その後その周縁部がガラス基板２を被う（Ｓ３）。このためマスクの全面が、ガラス基板を一度に被うことがなく、マスク中央部から周縁部にかけて順に被っていくので、マスクとガラス基板との間に位置ズレが発生し、正確なパターンをガラス基板上に形成することができなかった。   FIG. 4 is a diagram for explaining a change in the shape of the mask when the mask is mounted according to the prior art. The mask includes a mask film in which a predetermined opening pattern is formed, and a frame-type mask holder that holds the peripheral portion of the mask film. When the mask is brought close to the glass substrate, the magnetic force of the magnet is evenly applied to the entire mask surface. That is, when the mask 1 is put on the glass substrate 2, when the glass substrate 2 is gradually approached from the lower side (S1), the central portion of the mask 1 is suddenly moved upward by the magnetic force of the magnet 4 disposed on the upper portion of the chuck 3. It is pulled and covers the glass substrate 2 (S2), and then the peripheral edge covers the glass substrate 2 (S3). For this reason, the entire surface of the mask does not cover the glass substrate at the same time, but covers the mask from the central part to the peripheral part in sequence, so a positional deviation occurs between the mask and the glass substrate, and an accurate pattern is formed on the glass. It could not be formed on the substrate.

またマスクとガラス基板との位置合わせをするときにおいても、マスクをガラス基板に近づけて、すなわちマスクが磁石の磁力の影響を受ける範囲において行うと、磁力の影響によってマスクがガラス基板に近づいてしまい、正確に位置合わせすることができなかった。特に、マスクの中央部は、マスクの周縁部と同様の磁力が作用しているので磁力が強すぎ、マスクの中央部が山型に盛り上がってガラス基板にはり付いてしまう。したがって位置合わせするときには、マスクとガラス基板との間に一定量の隙間（磁力の影響を受けない距離）を空けなければならないが、位置合わせ終了後にマスクをガラス基板に近づけると、上述したようにマスクの中央部から周縁部にかけて順にガラス基板に被せられて行くので、マスクとガラス基板との間に位置ズレが発生し、正確なパターンをガラス基板上に形成することができない。   Also, when aligning the mask and the glass substrate, if the mask is brought close to the glass substrate, that is, within the range where the mask is affected by the magnetic force of the magnet, the mask approaches the glass substrate due to the magnetic force. , Could not align correctly. In particular, since the magnetic force similar to that of the peripheral edge of the mask acts on the central portion of the mask, the magnetic force is too strong, and the central portion of the mask rises in a mountain shape and sticks to the glass substrate. Therefore, when aligning, a certain amount of gap (distance not affected by magnetic force) must be provided between the mask and the glass substrate. However, when the mask is brought close to the glass substrate after the alignment is completed, as described above. Since the glass substrate is covered in order from the central portion to the peripheral portion of the mask, a positional shift occurs between the mask and the glass substrate, and an accurate pattern cannot be formed on the glass substrate.

本発明は、マスクを基板に近づけても、マスクと基板との位置関係を維持するマスク保持機構を提供することを目的とする。
またマスク保持機構を備えた成膜装置を提供することを目的とする。 An object of the present invention is to provide a mask holding mechanism that maintains the positional relationship between a mask and a substrate even when the mask is brought close to the substrate.
It is another object of the present invention to provide a film forming apparatus provided with a mask holding mechanism.

上記目的を達成するために、本発明に係るマスク保持機構は、成膜装置のチャックに装着保持されている基板に被せられるマスクのマスク保持機構であって、前記マスクは、磁性体で形成されてなり、前記チャックの前記基板を保持するチャック面と反対側に、磁石を点状に配設した、ことを特徴としている。
また前記磁石は、格子を形成する格子点に配設されたことを特徴としている。 In order to achieve the above object, a mask holding mechanism according to the present invention is a mask holding mechanism for a mask placed on a substrate mounted and held on a chuck of a film forming apparatus, and the mask is made of a magnetic material. The magnet is arranged in the form of dots on the opposite side of the chuck surface that holds the substrate of the chuck.
The magnets are arranged at lattice points forming a lattice.

また前記チャックの中央部に配設された前記磁石の磁力は、前記チャックの周縁部に比べて弱いことを特徴としている。
また前記チャックの中央部に配設された磁石の大きさは、前記チャックの周縁部に比べて小さいことを特徴としている。 The magnetic force of the magnet disposed at the center of the chuck is weaker than that of the peripheral edge of the chuck.
In addition, the size of the magnet disposed in the central portion of the chuck is smaller than the peripheral portion of the chuck.

また本発明に係る成膜装置は、成膜材料の蒸発源と、前記蒸発源に対向して配設され、基板を装着保持するチャックと、前記チャックの前記基板を保持するチャック面と反対側に、格子状の格子点に配設された磁石と、前記基板に被せられるマスクと、を備えたことを特徴としている。   In addition, a film forming apparatus according to the present invention includes an evaporation source of a film forming material, a chuck that is disposed opposite to the evaporation source, and that holds and holds a substrate, and a chuck surface opposite to the chuck surface that holds the substrate. And a mask disposed on the lattice point and a mask that covers the substrate.

この場合、前記チャックの中央部に配設された前記磁石は、前記チャックの周縁部に配設された前記磁石の磁力に比べて弱いものを配設することができる。また前記チャックの中央部に配設された磁石は、前記チャックの周縁部に配設された磁石の大きさに比べて小さいものを配設することができる。   In this case, the magnet disposed in the central portion of the chuck may be weaker than the magnetic force of the magnet disposed in the peripheral portion of the chuck. In addition, the magnet disposed in the central portion of the chuck may be smaller than the size of the magnet disposed in the peripheral portion of the chuck.

磁石を点状に配設することにより、マスクの中央部に作用する磁力を周縁部に比べて弱くすることができる。したがってマスクをチャックに近づけたときでも、マスクを水平状態に維持することができる。そしてマスクを基板に近づけて、マスクと基板との位置合わせを行うことができるので、マスクを基板に被せるときの移動距離が短くでき、作業時間を短縮することができる。   By arranging the magnets in a dot shape, the magnetic force acting on the central portion of the mask can be made weaker than that of the peripheral portion. Therefore, even when the mask is brought close to the chuck, the mask can be maintained in a horizontal state. Since the mask can be brought close to the substrate and the mask and the substrate can be aligned, the moving distance when the mask is placed on the substrate can be shortened, and the working time can be shortened.

また磁石を格子状に配設することにより、マスクの中央部に作用する磁力を周縁部に比べて弱くすることができる。
またチャックの中央部に配設される磁石の磁力と、チャックの周縁部に配設される磁石の磁力とを変えることによって、マスクの中央部に作用する磁力を周縁部に比べて弱くすることができる。 Further, by arranging the magnets in a lattice shape, the magnetic force acting on the central portion of the mask can be made weaker than that of the peripheral portion.
Also, by changing the magnetic force of the magnet arranged at the central part of the chuck and the magnetic force of the magnet arranged at the peripheral part of the chuck, the magnetic force acting on the central part of the mask is made weaker than that of the peripheral part. Can do.

またチャックの中央部に配設される磁石の大きさと、チャックの周縁部に配設される磁石の大きさとを変えることによっても、マスクの中央部に作用する磁力を周縁部に比べて弱くすることができる。   Also, the magnetic force acting on the central portion of the mask is made weaker than that of the peripheral portion by changing the size of the magnet disposed on the central portion of the chuck and the size of the magnet disposed on the peripheral portion of the chuck. be able to.

また成膜装置は、マスクを保持する磁石の磁力がマスクの中央部と周縁部とで異なるので、マスクが水平状態を保ったまま基板を被うことができる。したがってマスクと基板との間に位置ズレが発生することなく、正確なパターンを基板上に形成することができる。   In addition, since the magnetic force of the magnet for holding the mask differs between the central portion and the peripheral portion of the mask, the film forming apparatus can cover the substrate while the mask is kept in a horizontal state. Therefore, an accurate pattern can be formed on the substrate without causing a positional shift between the mask and the substrate.

以下に、本発明に係るマスク保持機構および成膜装置の最良の実施形態について説明する。なお本実施形態では、成膜装置として真空蒸着装置を用い、この真空蒸着装置で有機ＥＬ素子を製造する形態について説明する。図１は真空蒸着装置の説明図である。図２はチャック上に設けられた磁石の配置を説明する図である。真空蒸着装置１０は、その底部に有機材料１１の蒸発源１２（昇華源）を備えるとともに、その上部にチャック１４、磁石１６、基板クランプ１８およびマスククランプ２０を備えた構成である。   Hereinafter, the best embodiment of the mask holding mechanism and the film forming apparatus according to the present invention will be described. In the present embodiment, a mode in which a vacuum vapor deposition apparatus is used as a film forming apparatus and an organic EL element is manufactured using the vacuum vapor deposition apparatus will be described. FIG. 1 is an explanatory diagram of a vacuum deposition apparatus. FIG. 2 is a diagram illustrating the arrangement of magnets provided on the chuck. The vacuum deposition apparatus 10 includes an evaporation source 12 (sublimation source) of the organic material 11 at the bottom, and a chuck 14, a magnet 16, a substrate clamp 18, and a mask clamp 20 at the top.

有機材料１１の蒸発源１２は、有機材料１１が入れられるるつぼ１２ａを備えており、るつぼ１２ａの外面に有機材料１１を加熱・蒸発（昇華）させるヒーター１２ｂが設けられている。また真空蒸着装置１０の上部に設けられたチャック１４は、るつぼ１２ａに対面して配設されており、水平方向に沿って配置された平板である。そしてチャック１４は、真空蒸着装置１０の外側上部に設けられた回転機構（不図示）によって水平回転可能となっている。   The evaporation source 12 of the organic material 11 includes a crucible 12a in which the organic material 11 is placed, and a heater 12b that heats and evaporates (sublimates) the organic material 11 is provided on the outer surface of the crucible 12a. The chuck 14 provided on the upper part of the vacuum evaporation apparatus 10 is a flat plate arranged in the horizontal direction so as to face the crucible 12a. The chuck 14 can be horizontally rotated by a rotation mechanism (not shown) provided on the outer upper portion of the vacuum deposition apparatus 10.

またチャック１４の上部、すなわちガラス基板２２を保持する面（チャック面）と反対側に磁石１６が点状に配設されている。この磁石１６は、ガラス基板２２を被うマスク２４の大きさに対応して配設されている。なお磁石１６は、チャック１４の中央部に作用する磁石１６の磁力が周縁部に比べて弱くなるように配設されればよく、図２（Ａ）に示すように格子が交差する格子点に位置するように配設されればよい。   A magnet 16 is disposed in a dot shape on the upper side of the chuck 14, that is, on the side opposite to the surface (chuck surface) that holds the glass substrate 22. The magnet 16 is disposed corresponding to the size of the mask 24 covering the glass substrate 22. The magnet 16 may be disposed so that the magnetic force of the magnet 16 acting on the central portion of the chuck 14 is weaker than that of the peripheral portion, and at the lattice point where the lattice intersects as shown in FIG. What is necessary is just to arrange | position so that it may be located.

また磁石１６（１６ａ，１６ｂ）は、図２（Ｂ）に示すように、チャック１４の中央部に配設された磁石１６ａの大きさをチャック１４の周縁部に配設された磁石１６ｂに比べて小さくして、チャック１４の中央部に作用する磁石１６の磁力が周縁部に比べて弱くなるようにすることもできる。さらに磁石１６は、図２（Ｃ）に示すように、チャック１４の中央部における磁石１６ａの配置パターンと、周縁部における磁石１６ｂの配置パターンとを変えて、チャック１４の中央部に作用する磁石１６の磁力が周縁部に比べて弱くなるようにすることもできる。   As shown in FIG. 2B, the magnet 16 (16a, 16b) is larger in size than the magnet 16b disposed at the peripheral portion of the chuck 14 as compared with the magnet 16b disposed at the peripheral portion of the chuck 14. The magnetic force of the magnet 16 acting on the central portion of the chuck 14 can be reduced compared to the peripheral portion. Further, as shown in FIG. 2C, the magnet 16 changes the arrangement pattern of the magnets 16 a in the central part of the chuck 14 and the arrangement pattern of the magnets 16 b in the peripheral part, and acts on the central part of the chuck 14. It is also possible to make the magnetic force of 16 weaker than that of the peripheral portion.

そして磁石１６の配置位置や磁力は、マスク２４をチャック１４に近づけるときに生じるマスク２４の中央部の延び、すなわちマスク２４に形成されたパターンの開口寸法の延びを所定の値以内にするように設定されている。このような磁石１６の配置位置や磁力は、例えばチャック１４の厚みや材質、ガラス基板２２の厚みや材質、マスク２４の厚みや材質等によって変化するので、これらの要因を考慮して実験や計算等を行って決定すればよい。   The arrangement position and the magnetic force of the magnet 16 are set so that the extension of the central portion of the mask 24 generated when the mask 24 is brought close to the chuck 14, that is, the extension of the opening dimension of the pattern formed on the mask 24 is within a predetermined value. Is set. Such an arrangement position and magnetic force of the magnet 16 vary depending on, for example, the thickness and material of the chuck 14, the thickness and material of the glass substrate 22, the thickness and material of the mask 24, etc. And so on.

基板クランプ１８は、真空蒸着装置１０の上部から下方に向かって延び、先端部１８ａがチャック１４側（蒸着装置の中央側）に向けて折り曲げられた鉤型であり、チャック１４の側縁に沿って複数個が配設されている。この基板クランプ１８は、その先端部１８ａ（折曲げ部）でガラス基板２２の縁部を支えるために、各先端部１８ａが同じ高さ（同一面内）になるように設定されている。また基板クランプ１８は、真空蒸着装置１０の外側上部に設けられた昇降機構（不図示）によって、各先端部１８ａが同一面内にある状態を維持しつつ昇降可能になっている。そして基板クランプ１８が上昇することによって、ガラス基板２２をチャック１４に接触させて、平面状に装着保持させることが可能になっている。   The substrate clamp 18 extends downward from the upper part of the vacuum vapor deposition apparatus 10 and is a saddle type in which a front end portion 18a is bent toward the chuck 14 side (the central side of the vapor deposition apparatus), along the side edge of the chuck 14. A plurality of them are arranged. The substrate clamp 18 is set so that the tip portions 18a have the same height (in the same plane) in order to support the edge portion of the glass substrate 22 by the tip portion 18a (bending portion). Further, the substrate clamp 18 can be moved up and down by an elevating mechanism (not shown) provided on the outer upper portion of the vacuum vapor deposition apparatus 10 while maintaining the state in which the tip portions 18a are in the same plane. When the substrate clamp 18 is raised, the glass substrate 22 can be brought into contact with the chuck 14 and mounted and held in a flat shape.

マスククランプ２０は、真空蒸着装置１０の上部から下方に向かって延び、先端部２０ａがチャック１４側（蒸着装置の中央側）に向けて折り曲げられた鉤型であり、チャック１４や基板クランプ１８の側縁に沿って複数個が配設されている。このマスククランプ２０は、その先端部２０ａ（折曲げ部）でマスク２４の縁部を支えるために、各先端部２０ａが同じ高さ（同一面内）になるように設定されている。またマスククランプ２０は、真空蒸着装置１０の外側上部に設けられた昇降機構（不図示）によって、各先端部２０ａが同一面内にある状態を維持しつつ昇降可能になっている。したがってマスク２４は、移動可能に配設されている。なおマスク２４は、有機ＥＬ素子の各画素に対応する開口パターンが複数設けられたマスクフィルム２４ａと、マスクフィルム２４ａの周縁部を保持する枠型のマスクフレーム２４ｂとを備えている。   The mask clamp 20 extends downward from the upper part of the vacuum vapor deposition apparatus 10 and is a saddle type in which the tip 20a is bent toward the chuck 14 side (the central side of the vapor deposition apparatus). A plurality are arranged along the side edges. The mask clamp 20 is set so that each tip 20a has the same height (in the same plane) in order to support the edge of the mask 24 by the tip 20a (bending portion). Further, the mask clamp 20 can be moved up and down by an elevating mechanism (not shown) provided on the upper outer side of the vacuum vapor deposition apparatus 10 while maintaining the state in which the tip portions 20a are in the same plane. Accordingly, the mask 24 is movably disposed. The mask 24 includes a mask film 24a provided with a plurality of opening patterns corresponding to each pixel of the organic EL element, and a frame-shaped mask frame 24b that holds the peripheral edge of the mask film 24a.

そして基板クランプ１８およびマスククランプ２０は、真空蒸着装置１０の外側上部に設けられた回転機構（不図示）によって、チャック１４とともに回転することが可能になっている。   The substrate clamp 18 and the mask clamp 20 can be rotated together with the chuck 14 by a rotation mechanism (not shown) provided on the outer upper portion of the vacuum deposition apparatus 10.

次に、マスク２４の装着方法について説明する。図３はマスクの装着工程の説明図である。なおマスククランプ２０上には、予めマスク２４が配設されている。まずガラス基板２２は、基板搬送機構（不図示）によって真空蒸着装置１０内に入れられ、チャック１４とマスク２４との間に挿入される。そしてガラス基板２２は、前記基板搬送機構の下降動作とともに下方へ移動されて、基板クランプ１８上に載せられる（Ｓ１００）。   Next, a method for mounting the mask 24 will be described. FIG. 3 is an explanatory diagram of the mask mounting process. A mask 24 is disposed on the mask clamp 20 in advance. First, the glass substrate 22 is placed in the vacuum deposition apparatus 10 by a substrate transport mechanism (not shown), and is inserted between the chuck 14 and the mask 24. Then, the glass substrate 22 is moved downward along with the lowering operation of the substrate transport mechanism and placed on the substrate clamp 18 (S100).

この後、マスククランプ２０を上昇させることによりマスク２４を上方に移動させ、マスク２４上にガラス基板２２を載せる（Ｓ１１０）。そしてマスククランプ２０は、ガラス基板２２がチャック１４の底面（チャック面）に接触するまで上昇され続ける（Ｓ１２０）。なおガラス基板２２は、マスク２４上に載せられるとマスク２４に沿って水平になり、この水平状態を維持しつつチャック１４に当接される。   Thereafter, the mask 24 is moved up by moving the mask clamp 20 up, and the glass substrate 22 is placed on the mask 24 (S110). The mask clamp 20 continues to be raised until the glass substrate 22 contacts the bottom surface (chuck surface) of the chuck 14 (S120). When the glass substrate 22 is placed on the mask 24, the glass substrate 22 becomes horizontal along the mask 24 and is brought into contact with the chuck 14 while maintaining this horizontal state.

この後、基板クランプ１８をガラス基板２２に接触するまで上昇させる（Ｓ１３０）。これによりガラス基板２２は、基板クランプ１８により水平状態を維持しつつチャック１４に装着保持される。そしてマスククランプ２０を下降させて、マスク２４を下方に移動させ、マスク２４とガラス基板２２とを位置合わせする（Ｓ１４０）。   Thereafter, the substrate clamp 18 is raised until it contacts the glass substrate 22 (S130). Thus, the glass substrate 22 is mounted and held on the chuck 14 while maintaining the horizontal state by the substrate clamp 18. Then, the mask clamp 20 is lowered, the mask 24 is moved downward, and the mask 24 and the glass substrate 22 are aligned (S140).

この後、マスク２４を上昇させて、ガラス基板２２を被う（Ｓ１５０）。なおマスク２４の中央部に作用する磁石１６の磁力は、周縁部に作用する磁石１６の磁力に比べて弱いため、マスク２４の開口パターンが所定の寸法よりも大きくなってしまうことがなく、また平面状態を維持してガラス基板２２を被うので位置ズレを生じることがない。   Thereafter, the mask 24 is raised to cover the glass substrate 22 (S150). Since the magnetic force of the magnet 16 acting on the central portion of the mask 24 is weaker than the magnetic force of the magnet 16 acting on the peripheral portion, the opening pattern of the mask 24 does not become larger than a predetermined dimension, and Since the glass substrate 22 is covered while maintaining a flat state, no positional deviation occurs.

このようなマスク２４の装着工程を経た後、ガラス基板２２やマスク２４を回転させるとともに、ヒーター１２ｂによって有機材料１１を加熱・蒸発させて、ガラス基板２２上に所定のパターンを形成した後、マスク２４を下降させる。これにより有機ＥＬ素子が製造される。なおマスク２４の下降時においても、マスク２４の中央部に作用する磁力が周縁部に比べて弱いために、マスク２４全体が一度にガラス基板２２から離れる。   After passing through the mounting process of the mask 24, the glass substrate 22 and the mask 24 are rotated, and the organic material 11 is heated and evaporated by the heater 12b to form a predetermined pattern on the glass substrate 22. 24 is lowered. Thereby, an organic EL element is manufactured. Even when the mask 24 is lowered, since the magnetic force acting on the central portion of the mask 24 is weaker than that of the peripheral portion, the entire mask 24 is separated from the glass substrate 22 at a time.

このようなマスク２４保持機構によれば、チャック１４の上部に磁石１６を点状に配設するとともに、ガラス基板２２に被せられたマスク２４の中央部に作用する磁石１６の磁力を周縁部の磁力に比べて弱くしたので、マスク２４をガラス基板２２に被せるときは、マスク２４の水平状態を保ったまま被せることができる。これによりマスク２４とガラス基板２２との間に位置ズレが発生することがないので、正確なパターンをガラス基板２２上に形成することができる。   According to such a mask 24 holding mechanism, the magnet 16 is disposed in a dot shape on the upper portion of the chuck 14 and the magnetic force of the magnet 16 acting on the central portion of the mask 24 covered on the glass substrate 22 is applied to the peripheral portion. Since it is weaker than the magnetic force, when the mask 24 is covered on the glass substrate 22, it can be covered while maintaining the horizontal state of the mask 24. As a result, no displacement occurs between the mask 24 and the glass substrate 22, so that an accurate pattern can be formed on the glass substrate 22.

またマスク２４は、チャック１４に近づいたときでも水平状態を維持できるので、マスク２４とガラス基板２２との位置合わせするときのマスク２４とガラス基板２２との距離を短くすることができる。したがってマスク２４をガラス基板２２に被せるときの移動距離が小さくなるので、作業時間を短縮することができ、有機ＥＬ素子の製造効率を向上させることができる。   Further, since the mask 24 can maintain a horizontal state even when approaching the chuck 14, the distance between the mask 24 and the glass substrate 22 when aligning the mask 24 and the glass substrate 22 can be shortened. Therefore, since the moving distance when the mask 24 is put on the glass substrate 22 is reduced, the working time can be shortened and the manufacturing efficiency of the organic EL element can be improved.

なお本実施形態では、成膜装置として真空蒸着装置１０を用い、この真空蒸着装置１０で有機ＥＬ素子を製造する形態について説明したが、この形態に限定されることはない。   In addition, although this embodiment demonstrated the form which manufactures an organic EL element with this vacuum vapor deposition apparatus 10 using the vacuum vapor deposition apparatus 10 as a film-forming apparatus, it is not limited to this form.

真空蒸着装置の説明図である。It is explanatory drawing of a vacuum evaporation system. チャック上に設けられた磁石の配置を説明する図である。It is a figure explaining arrangement | positioning of the magnet provided on the chuck | zipper. マスクの装着工程の説明図である。It is explanatory drawing of the mounting process of a mask. 従来技術に係り、マスク装着時におけるマスクの形状の変化を説明する図である。It is a figure explaining a change of the shape of a mask at the time of mask mounting concerning a prior art.

符号の説明Explanation of symbols

１０………真空蒸着装置、１４………チャック、１６………磁石、１８………基板クランプ、２０………マスククランプ、２２………ガラス基板、２４………マスク。 DESCRIPTION OF SYMBOLS 10 ......... Vacuum vapor deposition apparatus, 14 ......... Chuck, 16 ......... Magnet, 18 ...... Substrate clamp, 20 ......... Mask clamp, 22 ......... Glass substrate, 24 ...... Mask.

Claims (5)

成膜装置のチャックに装着保持されている基板に被せられるマスクのマスク保持機構であって、
前記マスクは、磁性体で形成されてなり、
前記チャックの前記基板を保持するチャック面と反対側に、磁石を点状に配設した、
ことを特徴とするマスク保持機構。 A mask holding mechanism for a mask placed on a substrate mounted and held on a chuck of a film forming apparatus,
The mask is made of a magnetic material,
On the opposite side of the chuck surface that holds the substrate of the chuck, magnets are arranged in a dot shape.
A mask holding mechanism characterized by that. 前記磁石は、格子を形成する格子点に配設されたことを特徴とする請求項１に記載のマスク保持機構。   The mask holding mechanism according to claim 1, wherein the magnet is disposed at a lattice point forming a lattice. 前記チャックの中央部に配設された前記磁石の磁力は、前記チャックの周縁部に比べて弱いことを特徴とする請求項１または２に記載のマスク保持機構。   3. The mask holding mechanism according to claim 1, wherein a magnetic force of the magnet disposed in a central portion of the chuck is weaker than that of a peripheral portion of the chuck. 前記チャックの中央部に配設された磁石の大きさは、前記チャックの周縁部に比べて小さいことを特徴とする請求項１または２に記載のマスク保持機構。   3. The mask holding mechanism according to claim 1, wherein a size of a magnet disposed in a central portion of the chuck is smaller than a peripheral portion of the chuck. 成膜材料の蒸発源と、
前記蒸発源に対向して配設され、基板を装着保持するチャックと、
前記チャックの前記基板を保持するチャック面と反対側に、格子状の格子点に配設された磁石と、
前記基板に被せられるマスクと、
を備えたことを特徴とする成膜装置。 An evaporation source of the film forming material;
A chuck disposed opposite to the evaporation source and mounting and holding the substrate;
A magnet disposed at a lattice point on the opposite side of the chuck surface holding the substrate of the chuck;
A mask that covers the substrate;
A film forming apparatus comprising:
JP2005047813A 2005-02-23 2005-02-23 Mask holding mechanism and film forming apparatus Expired - Fee Related JP4609755B2 (en)

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KR1020077016155A KR100884029B1 (en) 2005-02-23 2006-02-22 Mask holding mechanism and film forming apparatus
PCT/JP2006/303189 WO2006090747A1 (en) 2005-02-23 2006-02-22 Mask holding mechanism and film forming apparatus
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KR100884029B1 (en) 2009-02-17
WO2006090747A1 (en) 2006-08-31

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