JP2006217410A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006217410A5 JP2006217410A5 JP2005029614A JP2005029614A JP2006217410A5 JP 2006217410 A5 JP2006217410 A5 JP 2006217410A5 JP 2005029614 A JP2005029614 A JP 2005029614A JP 2005029614 A JP2005029614 A JP 2005029614A JP 2006217410 A5 JP2006217410 A5 JP 2006217410A5
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- region
- imaging device
- solid
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims description 203
- 238000003384 imaging method Methods 0.000 claims description 165
- 239000004065 semiconductor Substances 0.000 claims description 146
- 239000000758 substrate Substances 0.000 claims description 36
- 230000003321 amplification Effects 0.000 claims description 32
- 239000010410 layer Substances 0.000 claims description 32
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 32
- 230000003287 optical Effects 0.000 claims description 17
- 239000002344 surface layer Substances 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 7
- 238000005036 potential barrier Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 description 89
- 238000009825 accumulation Methods 0.000 description 59
- 238000010586 diagram Methods 0.000 description 26
- 230000000875 corresponding Effects 0.000 description 25
- 108060003756 HMBS Proteins 0.000 description 16
- 230000035945 sensitivity Effects 0.000 description 16
- 238000000079 presaturation Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 101710017998 CFP Proteins 0.000 description 8
- -1 PDb1 ' Proteins 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000001629 suppression Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 230000002194 synthesizing Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000006011 modification reaction Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 206010047571 Visual impairment Diseases 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 229910004140 HfO Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-M Sodium 2-anthraquinonesulfonate Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)[O-])=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-M 0.000 description 1
- 230000000295 complement Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting Effects 0.000 description 1
- 230000001771 impaired Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005029614A JP4497366B2 (ja) | 2005-02-04 | 2005-02-04 | 光センサおよび固体撮像装置 |
| TW095129174A TWI466541B (zh) | 2005-02-04 | 2006-08-09 | 光感測器及固態攝影裝置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005029614A JP4497366B2 (ja) | 2005-02-04 | 2005-02-04 | 光センサおよび固体撮像装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009105110A Division JP4499819B2 (ja) | 2009-04-23 | 2009-04-23 | 固体撮像装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006217410A JP2006217410A (ja) | 2006-08-17 |
| JP2006217410A5 true JP2006217410A5 (fr) | 2009-06-18 |
| JP4497366B2 JP4497366B2 (ja) | 2010-07-07 |
Family
ID=36980223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005029614A Active JP4497366B2 (ja) | 2005-02-04 | 2005-02-04 | 光センサおよび固体撮像装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4497366B2 (fr) |
| TW (1) | TWI466541B (fr) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4745677B2 (ja) * | 2005-02-10 | 2011-08-10 | キヤノン株式会社 | 撮像装置 |
| JP4695902B2 (ja) * | 2005-03-18 | 2011-06-08 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP4459099B2 (ja) | 2005-03-18 | 2010-04-28 | キヤノン株式会社 | 固体撮像装置及びカメラ |
| JP4802688B2 (ja) * | 2005-12-06 | 2011-10-26 | コニカミノルタホールディングス株式会社 | 撮像素子および撮像装置 |
| US8319166B2 (en) | 2006-01-18 | 2012-11-27 | National University Corporation Shizuoka University | Solid-state image pick-up device and pixel signal readout method having dual potential well, dual transfer gate electrode and dual floating-diffusion region for separately transferring and storing charges respectively |
| US8184191B2 (en) | 2006-08-09 | 2012-05-22 | Tohoku University | Optical sensor and solid-state imaging device |
| EP1887626A1 (fr) * | 2006-08-09 | 2008-02-13 | Tohoku University | Capteur optique à grille de débordement et condensateur de stockage |
| JP4620780B2 (ja) * | 2006-08-25 | 2011-01-26 | 京セラ株式会社 | 感度補正方法および撮像装置 |
| JP2008258885A (ja) | 2007-04-04 | 2008-10-23 | Texas Instr Japan Ltd | 撮像装置および撮像装置の駆動方法 |
| JP4480753B2 (ja) | 2007-11-21 | 2010-06-16 | 日本テキサス・インスツルメンツ株式会社 | 固体撮像装置 |
| US8625010B2 (en) | 2008-05-02 | 2014-01-07 | Canon Kabushiki Kaisha | Solid-state imaging apparatus with each pixel including a photoelectric converter portion and plural holding portions |
| JP5219724B2 (ja) | 2008-10-09 | 2013-06-26 | キヤノン株式会社 | 固体撮像装置 |
| JP5267867B2 (ja) | 2009-03-06 | 2013-08-21 | ルネサスエレクトロニクス株式会社 | 撮像装置 |
| JP4835710B2 (ja) * | 2009-03-17 | 2011-12-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
| JP5521682B2 (ja) * | 2010-02-26 | 2014-06-18 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器 |
| JP5671830B2 (ja) * | 2010-03-31 | 2015-02-18 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
| US20130113768A1 (en) * | 2010-07-27 | 2013-05-09 | Sharp Kabushiki Kaisha | Display device and drive method for same |
| JP5810493B2 (ja) * | 2010-09-03 | 2015-11-11 | ソニー株式会社 | 半導体集積回路、電子機器、固体撮像装置、撮像装置 |
| JP5213969B2 (ja) * | 2011-01-07 | 2013-06-19 | キヤノン株式会社 | 固体撮像装置及びカメラ |
| JP5348176B2 (ja) * | 2011-05-16 | 2013-11-20 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、及び電子機器 |
| JP5278491B2 (ja) * | 2011-05-16 | 2013-09-04 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、及び電子機器 |
| JP5555336B2 (ja) * | 2013-01-28 | 2014-07-23 | キヤノン株式会社 | 固体撮像装置 |
| US9496304B2 (en) | 2013-08-15 | 2016-11-15 | Omnivision Technologies, Inc. | Image sensor pixel cell with switched deep trench isolation structure |
| US9054007B2 (en) * | 2013-08-15 | 2015-06-09 | Omnivision Technologies, Inc. | Image sensor pixel cell with switched deep trench isolation structure |
| JP5623607B2 (ja) * | 2013-08-30 | 2014-11-12 | キヤノン株式会社 | 撮像装置及び撮像システム |
| JP2015103958A (ja) | 2013-11-25 | 2015-06-04 | ルネサスエレクトロニクス株式会社 | 撮像装置 |
| TWI701819B (zh) * | 2015-06-09 | 2020-08-11 | 日商索尼半導體解決方案公司 | 攝像元件、驅動方法及電子機器 |
| US10341592B2 (en) | 2015-06-09 | 2019-07-02 | Sony Semiconductor Solutions Corporation | Imaging element, driving method, and electronic device |
| TWI713367B (zh) | 2015-07-07 | 2020-12-11 | 日商半導體能源研究所股份有限公司 | 成像裝置及其運作方法 |
| KR102660456B1 (ko) | 2015-09-10 | 2024-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법 |
| JP6701710B2 (ja) * | 2015-12-14 | 2020-05-27 | 株式会社ニコン | 撮像素子および撮像装置 |
| KR102515664B1 (ko) | 2016-03-08 | 2023-03-29 | 삼성전자주식회사 | Led 플리커 완화 기능을 가지는 이미지 센서 및 상기 이미지 센서를 포함하는 이미지 처리 시스템 |
| JP2017183563A (ja) | 2016-03-31 | 2017-10-05 | ソニー株式会社 | 撮像装置、駆動方法、および、電子機器 |
| JP6911128B2 (ja) * | 2017-01-25 | 2021-07-28 | ビーエイイー・システムズ・イメージング・ソリューションズ・インコーポレイテッド | 拡張されたダイナミックレンジを備えたイメージングアレイ |
| JP7121468B2 (ja) * | 2017-02-24 | 2022-08-18 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
| US10939046B2 (en) * | 2017-11-30 | 2021-03-02 | BAE Systems Imaging Solutions Inc. | LED flicker mitigation for motion pictures |
| CN109920808B (zh) * | 2017-12-13 | 2024-05-14 | 松下知识产权经营株式会社 | 摄像装置 |
| US11089210B2 (en) * | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Configurable image sensor |
| WO2020144910A1 (fr) | 2019-01-08 | 2020-07-16 | パナソニックＩｐマネジメント株式会社 | Dispositif d'imagerie |
| JP7396806B2 (ja) * | 2019-03-29 | 2023-12-12 | ラピスセミコンダクタ株式会社 | 半導体装置及び半導体装置の製造方法 |
| JPWO2020241287A1 (fr) | 2019-05-31 | 2020-12-03 | ||
| US11955503B2 (en) | 2019-11-21 | 2024-04-09 | Huawei Technologies Co., Ltd. | Imaging element, imaging sensor, camera system, and device comprising camera system with an overflow path and gate connected storage |
| WO2021166913A1 (fr) | 2020-02-20 | 2021-08-26 | ヌヴォトンテクノロジージャパン株式会社 | Dispositif d'imagerie à semi-conducteur et dispositif d'imagerie |
| JP7006722B2 (ja) * | 2020-05-01 | 2022-01-24 | 株式会社ニコン | 撮像素子および撮像装置 |
| US20230224602A1 (en) * | 2020-05-20 | 2023-07-13 | Sony Semiconductor Solutions Corporation | Solid-state imaging device |
| WO2022244328A1 (fr) * | 2021-05-17 | 2022-11-24 | ソニーセミコンダクタソリューションズ株式会社 | Dispositif d'imagerie à semi-conducteurs et appareil électronique |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590556A (ja) * | 1990-05-11 | 1993-04-09 | Olympus Optical Co Ltd | 固体撮像素子 |
| TW421962B (en) * | 1997-09-29 | 2001-02-11 | Canon Kk | Image sensing device using mos type image sensing elements |
| JP3592106B2 (ja) * | 1998-11-27 | 2004-11-24 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| JP3558589B2 (ja) * | 2000-06-14 | 2004-08-25 | Ｎｅｃエレクトロニクス株式会社 | Ｍｏｓ型イメージセンサ及びその駆動方法 |
| JP3984814B2 (ja) * | 2001-10-29 | 2007-10-03 | キヤノン株式会社 | 撮像素子、その撮像素子を用いた放射線撮像装置及びそれを用いた放射線撮像システム |
| JP4109858B2 (ja) * | 2001-11-13 | 2008-07-02 | 株式会社東芝 | 固体撮像装置 |
| US7265740B2 (en) * | 2002-08-30 | 2007-09-04 | Toshiba Matsushita Display Technology Co., Ltd. | Suppression of leakage current in image acquisition |
| US6852565B1 (en) * | 2003-07-10 | 2005-02-08 | Galaxcore, Inc. | CMOS image sensor with substrate noise barrier |
-
2005
- 2005-02-04 JP JP2005029614A patent/JP4497366B2/ja active Active
-
2006
- 2006-08-09 TW TW095129174A patent/TWI466541B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4497366B2 (ja) | 光センサおよび固体撮像装置 | |
| JP4499819B2 (ja) | 固体撮像装置 | |
| JP2006217410A5 (fr) | ||
| EP2942813B1 (fr) | Capteur optique et dispositif d'imagerie à l'état solide | |
| US8184191B2 (en) | Optical sensor and solid-state imaging device | |
| JP5066704B2 (ja) | 固体撮像装置、および固体撮像装置の動作方法 | |
| EP1868377B1 (fr) | Capteur de lumiere, dispositif de collecte d image a semi-conducteur et procede pour faire fonctionner le dispositif de collecte d image a semi-conducteur | |
| CN101123670B (zh) | 光学传感器和固体成像器件 | |
| KR101105617B1 (ko) | 고체 촬상 장치, 라인 센서, 광 센서 및 고체 촬상 장치의동작 방법 | |
| JP4467542B2 (ja) | 固体撮像装置 | |
| US10332928B2 (en) | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus | |
| US8471315B1 (en) | CMOS image sensor having global shutter pixels built using a buried channel transfer gate with a surface channel dark current drain | |
| JP4361072B2 (ja) | 固体撮像装置及びその製造方法 | |
| US20110241080A1 (en) | Solid-state imaging device, method for manufacturing the same, and electronic apparatus | |
| JP2007134639A (ja) | 光電変換装置及びそれを用いた撮像素子 | |
| JP2005217302A (ja) | 固体撮像装置 | |
| KR101277990B1 (ko) | 광학 센서 및 고체 촬상 장치 | |
| JP2006210680A (ja) | 固体撮像素子 | |
| JP2020080377A (ja) | 固体撮像装置 |