JP2006210591A - Semiconductor apparatus and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus which can ensure electrical connection in high reliability without dislocation between a projecting electrode and a land while the joint is filled with a sealing resin without voids. <P>SOLUTION: The semiconductor apparatus is formed by flip-chip mounting a semiconductor device 1 on a circuit board 2, and filling a sealing resin 7 between the semiconductor device 1 and the circuit board 2. In this case, a projecting electrode 4 is provided on the electrode 3 of the semiconductor device 1. A position regulating projection 6 such as an interrupting annular projection is provided to form an open groove 9 for opening to the side a recessed hole 8 and the internal space of the recessed hole 8 to which the tip end of the projecting electrode 4 is inserted, in a land 5 to be bonded with the projecting electrode 4 of the circuit board 2. The dislocation of the projecting electrode 4 can be prevented by the position regulating projection 6, and the sealing resin 7 can be charged by the open groove 9 without producing voids. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  In the field of packaging technology, high-density packaging is required as electronic devices become smaller and more functional. Among them, a semiconductor device has been developed in which a protruding electrode is provided on a semiconductor element and flip-chip mounting is performed on a land of a circuit board.

  A conventional method of manufacturing this type of semiconductor device will be described with reference to FIG. First, as shown in FIG. 6A, the semiconductor element 21 is formed on the electrode 22 of the semiconductor element 21 in which an arbitrary circuit is formed through a film forming process, a lithography process, and an etching process, which are well-known techniques. A protruding electrode 25 is formed for electrical connection with a circuit board to be mounted. The protruding electrode 25 is formed in a state in which a metal ball is formed by flowing a discharge current through the tip of a metal wire 24 such as gold or aluminum protruding through the through hole of the capillary 23. The electrode 22 is brought into contact with the electrode 22 and subjected to pressure and ultrasonic vibration to join the electrode 22 and the metal ball, and then the capillary 23 is raised to break the metal wire 24.

  On the other hand, as shown in FIG. 6B, a sealing resin sheet 27 is disposed on the surface of the circuit board 26 on which the semiconductor element 21 is mounted, and heating and pressing are performed using a pasting tool 28. A resin sheet 27 is attached to a region where the semiconductor element 21 is mounted. Next, as shown in FIG. 6C, the semiconductor element 21 is aligned on the circuit board 26 so that the land 29 of the circuit board 26 and the protruding electrode 25 of the semiconductor element 21 face each other. Is installed.

  Next, as shown in FIG. 6D, pressurization and heating are performed with a thermocompression bonding tool 30. As a result, the protruding electrode 25 is electrically and mechanically joined to the land 29 while being leveled, and at the same time, the resin sheet 27 is melted and cured to seal the semiconductor element 21 and the circuit board 26.

  At this time, as shown in FIG. 6E due to a combination of errors such as the positional accuracy when the protruding electrode 25 is formed, the alignment accuracy when the semiconductor element 21 is mounted, the shape of the land 29, the parallelism of the thermocompression bonding tool 30, and the like. As described above, the protruding electrode 25 of the semiconductor element 21 slides on the land 29 and is displaced with respect to the corresponding land 29, and the reliability of the electrical connection of the semiconductor element 21 to the circuit board 26 is greatly reduced. There was a problem.

  A semiconductor device that solves such a problem has already been proposed (see, for example, Patent Document 1). Next, the semiconductor device disclosed in Patent Document 1 will be described with reference to FIG.

In FIG. 7, a semiconductor device 31 is configured by electrically and mechanically connecting a semiconductor element 32 and a circuit board 35 and sealing between the semiconductor element 32 and the circuit board 35 with a sealing resin 38. Yes. A protruding electrode 34 made of, for example, gold is formed on the electrode 33 of the semiconductor element 32, and the protruding electrode 34 is received in a recessed hole 37 formed in each corresponding land 36 of the circuit board 35. The semiconductor element 32 and the circuit board 35 are mechanically and electrically connected by mechanically and electrically joining the electrode 34 and the land 36. Further, the connecting portion between the protruding electrode 34 and the land 36 is protected by the sealing resin 38. As described above, the concave hole 37 is formed in the land 36 of the circuit board 35, and the protruding electrode 34 is received in the concave hole 37, thereby preventing the protruding electrode 34 from slipping and being displaced on the land 36. It is said that.
Japanese Patent Laid-Open No. 10-189655

  However, in the configuration shown in FIG. 7, the sealing resin 38 is not uniformly filled into the concave hole 37 formed in the land 36, and an unfilled portion may occur. If there is an unfilled part of the sealing resin at the joint between the land and the protruding electrode, moisture that has entered the unfilled part may cause a steam explosion in a moisture absorption reflow test, etc. There is a problem that the reliability of the electrical connection of the semiconductor element 32 to the circuit board 35 is significantly reduced.

  The present invention solves the above-described conventional problems, and does not cause misalignment between the projecting electrode and the land, and the sealing resin is filled in the connection portion without causing vacancies, thereby ensuring high reliability in electrical connection. An object of the present invention is to provide a semiconductor device and a method for manufacturing the same.

  A semiconductor device according to the present invention is a semiconductor device in which a semiconductor element is flip-chip mounted on a circuit board, and a sealing resin is filled between the semiconductor element and the circuit board, and a protrusion is formed on each electrode of the semiconductor element. Provided with electrodes, and at least a plurality of lands of the circuit board to which the protruding electrodes are joined, are provided with position restricting protrusions that position the protruding electrodes so as to face part of the side surfaces of the protruding electrodes. It is.

  According to this configuration, when the semiconductor element is positioned and mounted on the circuit board so that each protruding electrode of the semiconductor element faces the corresponding land of the circuit board, the position of the plurality of protruding electrodes is restricted by the position restricting protrusions. Thus, each protruding electrode of the semiconductor element and each land of the circuit board can be reliably positioned, the semiconductor element can be mounted on the circuit board without causing a positional shift, and the sealing between the semiconductor element and the circuit board is possible. When filling the resin, the sealing resin flows smoothly and surely from the part other than the position restricting protrusions, and the excess sealing resin flows out smoothly. Since the sealing resin can be uniformly filled in the periphery, a highly reliable electrical connection can be ensured.

  In addition, the position restricting protrusion preferably includes an intermittent annular protrusion that forms a concave hole into which the tip end portion of the protruding electrode is inserted and an open groove that opens the inner space of the concave hole to the side. According to this configuration, the protruding electrode and the land can be reliably positioned by inserting the protruding electrode of the semiconductor element into the recessed hole, and the sealing resin can be reliably inserted into the recessed hole through the open groove even when the sealing resin is filled. In addition, since excess sealing resin flows out smoothly, the sealing resin can be uniformly filled around each protruding electrode without biting the vacancies.

  In addition, by causing the lands to have different opening directions of the open grooves, the protruding electrodes inserted into the recessed holes move uniformly in the opening direction of the open grooves and come out of the recessed holes through the open grooves. It is possible to prevent the occurrence of displacement due to such a situation.

  In addition, in some or all of the lands, when the open grooves are formed in a plurality of directions from the concave holes, the concave resin is easily filled with the sealing resin, and generation of unfilled portions can be suppressed.

  Moreover, when the inside of the concave hole is gold-plated, it is possible to stably perform bonding with the protruding electrode of the semiconductor element.

  In addition, when the concave hole is formed in a tapered shape that spreads upward, the protruding electrode can be smoothly inserted into the concave hole by sliding on the tapered side wall portion, and can be reliably positioned in the concave hole. .

  The semiconductor device manufacturing method of the present invention is a semiconductor device manufacturing method in which a semiconductor element is flip-chip mounted on a circuit board, and a sealing resin is filled between the semiconductor element and the circuit board. A protruding electrode forming step for forming a protruding electrode on each electrode formed on the circuit surface of the semiconductor element, a land for bonding each protruding electrode of the electronic component to each circuit board, and at least some of the plurality A land forming step for forming a position restricting protrusion for restricting the position of the protruding electrode on a land of the protruding electrode so as to face a part of the side surface of the tip of the protruding electrode, and disposing a sealing resin in a semiconductor element mounting region on the circuit board A sealing resin arranging step, a semiconductor element mounting step of mounting the semiconductor element on the circuit board in a state where the protruding electrode and the land of the semiconductor element are positioned, and the mounted semiconductor element is subjected to a predetermined pressure and temperature. It is obtained by a crimping step of thermocompression bonding at a predetermined bonding time circuit board with a pressure.

  According to this configuration, after the plurality of protruding electrodes of the semiconductor element are positioned by the position restricting protrusions formed on the corresponding lands of the circuit board and the semiconductor element is mounted on the circuit board, the semiconductor element is mounted on the circuit board. By bonding the electrode of the semiconductor element to the corresponding land of the circuit board by thermocompression bonding, the protruding electrode of the semiconductor element is regulated on the land by the position regulating projection at the time of thermocompression bonding. Can be prevented from slipping relative to the corresponding land, and the sealing resin can flow smoothly on the land, so the sealing resin does not bite into the sealing resin and fills the sealing resin uniformly. Thus, a highly reliable semiconductor device can be obtained.

  According to the semiconductor device and the manufacturing method thereof of the present invention, the position of the plurality of protruding electrodes of the semiconductor element is regulated by the position regulating projections formed on the corresponding land of the circuit board, thereby causing the semiconductor element to be displaced. And can be mounted on a circuit board. Also, since the sealing resin smoothly flows on the land when the sealing resin is filled between the semiconductor element and the circuit board, the sealing resin is not surrounded by the sealing resin, and the sealing resin is placed around the protruding electrodes. Can be filled uniformly. Thus, a semiconductor device that ensures highly reliable electrical connection can be obtained.

  Hereinafter, an embodiment of a semiconductor device and a manufacturing method thereof according to the present invention will be described with reference to FIGS.

  In FIG. 1A, reference numeral 1 denotes a semiconductor element in which an arbitrary circuit is formed through a well-known technique of a film forming process, a lithography process, and an etching process, in order to achieve electrical connection with the circuit board 2. A protruding electrode 4 is formed on the electrode 3 by wire bonding or plating.

  An arbitrary circuit is formed on the circuit board 2 through a known lithography process and etching process, and the land 5 corresponding to the protruding electrode 4 is formed by a two-stage etching method, a half etching method, a plating method, or the like. A position restricting protrusion 6 is formed. In this embodiment, as shown in FIG. 1B, the position restricting protrusion 6 forms a concave hole 8 at the center and an open groove 9 that opens the inner space of the concave hole 8 sideways. It is comprised by the intermittent annular protrusion. By inserting the protruding electrode 4 into the concave hole 8 and then applying pressure and heat, the protruding electrode 4 and the land 5 are thermocompression bonded with the protruding electrode 4 being leveled, so that the semiconductor element 1 and the circuit board 2 are connected. Electrically connected.

  Since the protruding electrode 4 is regulated by the position regulating projection 6 formed on the land 5 in this way, the semiconductor element 1 is inclined with respect to the circuit board 2 when the semiconductor element 1 is mounted on the circuit board 2. Even when the semiconductor element 1 is pressed against the circuit board 2 or when the pressure applied to the protruding electrode 4 of the semiconductor element 1 is not uniform, the semiconductor element 1 slips on the land 5 and is displaced. Can be suppressed.

  A sealing resin 7 is filled between the semiconductor element 1 and the circuit board 2. The sealing resin 7 uses a thermosetting resin, melts by heating at a temperature equal to or lower than the curing temperature, and flows between the semiconductor element 1 and the circuit board 2 toward the periphery by simultaneously applying pressure. Further heating is performed and the semiconductor element 1 and the circuit board 2 are firmly bonded to each other when the temperature exceeds the curing temperature.

  In the present embodiment, the land 5 is formed with the concave hole 8 and an open groove 9 that opens the internal space to the side, so that when the sealing resin 7 is melted, the molten resin passes through the open groove 9 to enter the concave hole 8. In addition, since excess molten resin flows out, no unfilled portion of the sealing resin 7 is generated in the concave hole 8.

  As shown in FIG. 2A, the opening directions of the recessed holes 8 formed in the lands 5 by the opening grooves 9 are not all the same, but as shown in FIG. It is preferable to have various directions such as a direction that is substantially radially directed from the center of the arrangement region. 2A, when the opening direction is the same direction, the protruding electrode 4 may be displaced from the opening groove 9 when the semiconductor element 1 is mounted. By diversifying the opening directions, it is possible to suppress the displacement of the semiconductor element 1.

  Moreover, it is preferable to provide a plurality of open grooves 9 for the recessed holes 8 in the land 5 as shown in FIG. This is because the provision of a plurality of open grooves 9 makes it easy to flow into and out of the concave hole 8 when the sealing resin 7 is melted, so that the occurrence of unfilled portions of the sealing resin 7 can be significantly suppressed. Because it can. In the illustrated example, the open grooves 9 are formed in three directions, but may be two directions or four or more directions. From the viewpoint of easy filling of the sealing resin 7, it is better that the number of the open grooves 9 is larger. However, if the number is too large, the probability that the protruding electrode 4 comes out increases, which is not preferable, and is appropriately designed depending on the shape and size of the protruding electrode 4. . Even if the opening direction of the recessed hole 8 by the opening groove 9 is large, it is possible to prevent the protruding electrode 4 from coming out by appropriately changing the opening direction between the lands 5.

  The concave hole 8 is preferably subjected to a gold plating process. This is because stable electrical contact between the land 5 and the protruding electrode 4 can be obtained. Moreover, it is preferable that the concave hole 8 is formed in a taper shape. This is because when the semiconductor element 1 is mounted, the protruding electrode 4 slides along the tapered side wall and is guided into the recessed hole 8, so that the protruding electrode 4 can be reliably positioned in the recessed hole 8.

  According to the configuration of the semiconductor device described above, since the protruding electrode 4 formed on the electrode 3 of the semiconductor element 1 is received by the concave hole 8 formed in the land 5 of the circuit board 2, the semiconductor element 1 is mounted on the circuit board 2. Even when the semiconductor element 1 is inclined with respect to the circuit board 2 or when the pressure applied to the protruding electrode 4 is not uniform when the semiconductor element 1 is pressed, the semiconductor element 1 slides on the land 5. It is possible to suppress displacement with respect to the corresponding land 5, and furthermore, since the open groove 9 that opens the space in the recessed hole 8 to the side is formed, the sealing resin 7 is formed in the recessed hole 8. Can be filled without generating an unfilled portion, and a semiconductor device capable of improving reliability can be obtained.

  Next, a manufacturing process of the semiconductor device having the above configuration will be described with reference to FIG.

  First, as shown in FIG. 4A, an arbitrary circuit is formed in the semiconductor element 1 through a film forming process, a lithography process, and an etching process, which are well-known techniques. A protruding electrode 4 for connection is formed on the electrode 3.

  In this embodiment, in order to form the protruding electrode 4 by the wire bonding method, the gold ball is melted by flowing a discharge current to the tip of the metal wire 12 such as gold or aluminum protruding through the through hole of the capillary 11. In the formed state, a gold ball is brought into contact with the electrode 3 with the capillary 11 and an applied pressure and ultrasonic vibration are applied to join the electrode 3 and the gold ball. Thereafter, the capillary 11 is raised, and the metal wire 12 is connected. The protruding electrode 4 is formed on the electrode 3 by breaking near the boundary with the gold ball. As a specific example, by using a gold wire having a diameter of 0.025 mm as the metal wire 12, the protruding electrode 4 having a pedestal diameter of 0.08 mm, a pedestal height of 0.02 mm, and a top height of 0.08 mm is formed. can do.

  On the other hand, as shown in FIG. 4B, an arbitrary circuit is formed on the circuit board 2 through a lithography process and an etching process, which are well-known techniques, and the land corresponding to the protruding electrode 4 of the semiconductor element 1 is formed. 5, a position restricting projection 6 comprising an intermittent annular projection is formed by a two-stage etching method, a half-etching method, a plating method, etc., and a concave hole 8 having an open groove 9 is formed by this intermittent annular projection. Has been. Next, a resin sheet 13 is placed on the surface of the circuit board 2 on which the semiconductor element 1 is mounted, and heated and pressurized using the affixing tool 14 to obtain the semiconductor element as shown in FIG. A sheet-shaped sealing resin 7 attached to a region where 1 is mounted is provided.

  As a specific example, the land 5 has a thickness of 0.012 mm and a diameter of 0.08 mm, and the concave hole 8 has a diameter of 0.05 mm and the open groove 9 has a width of 0.02 mm by lithography. Further, an epoxy thermosetting resin sheet having a thickness of 0.04 mm was used as the sheet-shaped sealing resin 13, and pasting was performed under conditions of 80 ° C., 3 sec, and 44 kPa to form the sealing resin 7. .

  Next, as shown in FIG. 4C, the semiconductor element 1 having the protruding electrode 4 is aligned on the circuit board 2 on which the sealing resin 7 is pasted so that the land 5 and the protruding electrode 4 face each other. The semiconductor element 1 is mounted on the circuit board 2. At this time, in this embodiment, the width of the open groove 9 of the concave hole 8 in the land 5 is set to 0.02 mm which is smaller than the diameter 0.025 mm of the metal wire 12 which is the diameter of the top of the protruding electrode 4. The protruding electrode 4 can be prevented from slipping through the open groove 9.

  Next, as shown in FIG. 4D, by applying pressure and heating with the thermocompression bonding tool 15, the protruding electrode 4 is electrically and mechanically joined to the land 5 while being crushed and leveled. At the same time, the sealing resin 7 is melted and cured. The thermocompression bonding conditions were 210 ° C., 20 sec, and 220 kPa.

  According to the present embodiment, since the protruding electrode 4 is received by the recessed hole 8 formed by the position restricting protrusion 6 formed on the land 5 of the circuit board 2, the positional accuracy when forming the protruding electrode 4, the semiconductor element 1. Even if the alignment accuracy at the time of mounting, the shape of the land 5, the parallelism of the thermocompression bonding tool 15 and the like are slightly deviated, the protruding electrode 4 and the land 5 can be reliably bonded without being deviated.

  Moreover, since the concave hole 8 is opened laterally by the open groove 9, the sealing resin 7 melted from the open groove 9 is likely to flow in and out, so that generation of unfilled portions of the sealing resin 7 is suppressed. can do.

  In the above-described embodiment, as shown in FIG. 2B, intermittent annular protrusions are formed as the position restricting protrusions 6 on all the lands 5 arranged along the four sides of the rectangular semiconductor element 1. In this example, the concave hole 8 having the open groove 9 is formed, and the open direction of the open groove 9 is arranged in a substantially radial manner. However, a plurality of lands 5, for example, at least one land 5 on each side is provided. It is also possible to form a concave hole 8 having only an open groove 9 and to open the open grooves 9 in different directions. However, by forming the recessed holes 8 in all the lands 5, it is possible to insert and position all the protruding electrodes 4, and thus it is possible to ensure a more reliable electrical connection.

  Furthermore, the position restricting protrusion 6 is not limited to the intermittent annular protrusion that forms the concave hole 8 having the open groove 9. For example, as illustrated in FIG. 5, the position restricting protrusion 6 includes the land 5 arranged in a rectangular shape. It is good also as a structure which provided the circular-arc-shaped position control protrusion 6 in the corner | angular part of the rectangular array of the land 5 located in four corners.

  In the above description of the embodiment, the sheet-shaped sealing resin 7 is pasted on the circuit board 2 in advance, and then the semiconductor element 1 is mounted and thermocompression bonded. However, after the semiconductor element 1 is mounted, The same effect can be obtained even by a method in which a paste-like sealing resin is poured between the circuit board 2 and the semiconductor element 1 and filled.

  According to the semiconductor device and the manufacturing method thereof of the present invention, the position of the plurality of protruding electrodes of the semiconductor element is regulated by the position regulating projections formed on the corresponding land of the circuit board, thereby causing the semiconductor element to be displaced. Can be mounted on the circuit board without any trouble, and when the sealing resin is filled between the semiconductor element and the circuit board, the sealing resin smoothly flows on the land. Since the periphery can be uniformly filled with a sealing resin, it is useful for obtaining a semiconductor device capable of improving reliability.

1A and 1B show a configuration of a semiconductor device according to an embodiment of the present invention, in which FIG. 1A is a cross-sectional view, and FIG. Explanatory drawing of the direction of the open groove | channel of the position control protrusion formed in the land of the embodiment. The perspective view which shows the other example of formation of the open groove | channel of the position control protrusion in the embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device in the embodiment. The top view which shows the other example of the position control protrusion in the embodiment. Sectional drawing which shows the manufacturing process of the semiconductor device of a prior art example. Sectional drawing of the semiconductor device of another prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Circuit board 3 Electrode 4 Projection electrode 5 Land 6 Position control protrusion (intermittent annular protrusion)
7 Sealing resin 8 Concave hole 9 Open groove

Claims (7)

A semiconductor device in which a semiconductor element is flip-chip mounted on a circuit board, and a sealing resin is filled between the semiconductor element and the circuit board,
Protrusion electrodes are provided on the respective electrodes of the semiconductor element, and the position of the protrusion electrodes is restricted to at least a plurality of lands of the circuit board to which the respective protrusion electrodes are bonded so as to face a part of the side surface of the tip portion of the protrusion electrode. A semiconductor device comprising a position restricting protrusion.   2. The position restricting protrusion comprises an intermittent annular protrusion that forms a concave hole into which a tip end portion of the protruding electrode is inserted and an open groove that opens the inner space of the concave hole to the side. The semiconductor device described.   The semiconductor device according to claim 2, wherein there are those in which the opening direction of the open groove differs between lands.   3. The semiconductor device according to claim 2, wherein in some or all of the lands, open grooves are formed in a plurality of directions from the recessed holes.   The semiconductor device according to claim 2, wherein the inside of the concave hole is gold-plated.   The semiconductor device according to claim 2, wherein the concave hole is formed in a tapered shape that widens upward. A method of manufacturing a semiconductor device comprising flip-chip mounting a semiconductor element on a circuit board and filling a sealing resin between the semiconductor element and the circuit board,
A protruding electrode forming step of forming a protruding electrode on each of the electrodes formed on the circuit surface of the semiconductor element;
Position regulation for forming a land for joining each bump electrode of an electronic component on the circuit board and for regulating the position of the bump electrode on at least a part of the plurality of lands facing a part of the side surface of the tip portion of the bump electrode A land forming step for forming a protrusion; and
A sealing resin arrangement step of arranging a sealing resin in a semiconductor element mounting region on the circuit board;
A semiconductor element mounting step of mounting the semiconductor element on the circuit board in a state where the protruding electrode and the land of the semiconductor element are positioned;
A method of manufacturing a semiconductor device, comprising: a step of thermocompression bonding a mounted semiconductor element to a circuit board at a predetermined pressure bonding temperature and pressure for a predetermined pressure bonding time.

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