CN108682631B - LED light-emitting panel and manufacturing method thereof - Google Patents

LED light-emitting panel and manufacturing method thereof Download PDF

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Publication number
CN108682631B
CN108682631B CN201810628325.2A CN201810628325A CN108682631B CN 108682631 B CN108682631 B CN 108682631B CN 201810628325 A CN201810628325 A CN 201810628325A CN 108682631 B CN108682631 B CN 108682631B
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insulating layer
layer
metal
solder
emitting panel
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CN108682631A (en
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侯立东
崔文杰
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Hubei Weiguan Zhixian Technology Co ltd
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Individual
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto

Abstract

The invention provides an LED light-emitting panel and a manufacturing method thereof, wherein blind holes are formed in advance, and then through holes are formed in the blind holes, so that a bonding pad is not damaged; the metal column with the solder layer and the dielectric layer is used as a conductive terminal, so that the fixation of the conductive terminal and the metal substrate can be enhanced, and the solder is saved. In addition, the metal column and the metal substrate are made of the same material, so that different temperatures caused by different heat conduction coefficients are prevented, and warping can be prevented.

Description

LED light-emitting panel and manufacturing method thereof
Technical Field
The invention relates to the field of LED packaging, in particular to an LED light-emitting panel and a manufacturing method thereof.
Background
Most of the existing LED packages are in COB (chip on board) form, for example, as shown in figure 1, a plurality of LED chips 2 are mounted on an insulating substrate 1, the LED chips 2 are inversely installed on the insulating substrate 1, then the insulating substrate is sealed by packaging resin 4, the insulating substrate 1 is subjected to back drilling and is filled with conductive substances to form through holes 3 so as to lead out terminals of the LED chips, drilling needs to be realized through processes such as laser drilling or corrosion, the pads of the LEDs are damaged at the last stage, and the reliability of the packages is not facilitated.
Disclosure of Invention
In order to solve the above problems, the present invention provides a method for manufacturing an LED light-emitting panel, including:
(1) providing a metal substrate, wherein the metal substrate is provided with a first surface and a second surface which are opposite, and a first insulating layer is formed on the first surface;
(2) forming a plurality of annular blind holes in the metal substrate by using a laser grooving technology, wherein the annular blind holes penetrate through the first insulating layer and penetrate into the metal substrate, the annular blind holes surround a metal column, and the first insulating layer on the metal column is removed simultaneously;
(3) distributing a plurality of LED chips on the first insulating layer in a mode that bonding pads of the LED chips face the first insulating layer, wherein the bonding pads correspond to the annular blind holes one by one, the LED chips completely cover the annular blind holes, a plastic packaging layer is formed on the first insulating layer, and the plastic packaging layer completely covers the LED chips;
(4) thinning the second surface by using a mechanical polishing mode until the annular blind hole is exposed; taking out the plurality of metal columns in the annular blind holes to form a plurality of through holes in the metal substrate, forming a dielectric layer on the side surfaces of the metal columns, and forming a solder layer on one end surface of each metal column;
(5) respectively inserting metal columns with solder layers and dielectric layers into the through holes, heating the metal substrate, and realizing the reflux of the solder layers so that the solder layers are welded with the bonding pads;
(6) forming a second insulating layer on a second surface of the metal substrate, a portion of the second insulating layer being embedded between the metal pillar and the via;
(7) and photoetching the second insulating layer to form a groove, and filling a conductive substance in the groove to form a redistribution line.
According to an embodiment of the present invention, further comprising step (8): and planting balls on the redistribution lines to form solder ball bumps.
According to the embodiment of the invention, after the step (4) of taking out the plurality of metal columns in the annular blind hole, the step of further thinning the second surface is further included.
According to an embodiment of the invention, the first insulating layer is a polymer.
According to the embodiment of the invention, the diameter of the metal column with the solder layer and the dielectric layer is smaller than that of the through hole.
The present invention also provides an LED light emitting panel, comprising:
a metal substrate including opposing first and second surfaces and a plurality of vias extending through the first and second surfaces;
a first insulating layer formed on the first surface and having a plurality of openings corresponding to the through holes;
the LED chips are distributed on the first insulating layer in a mode that bonding pads of the LED chips face the first surface, the bonding pads correspond to the through holes and the openings one by one, and the LED chips completely cover the through holes and the openings;
the plastic packaging layer is formed on the first surface and completely covers the LED chip;
the metal column is provided with a solder layer and a dielectric layer, the dielectric layer is formed on the side surface of the metal column, the solder layer is formed on one end surface of the metal column, the metal column is inserted into the through hole, and the solder layer is welded with the bonding pad through reflow;
a second insulating layer formed on a second surface of the metal substrate and formed within a redistribution line within the second insulating layer.
According to the embodiment of the invention, the diameter of the metal column with the solder layer and the dielectric layer is smaller than that of the through hole.
According to an embodiment of the invention, the first insulating layer is a polymer.
According to the embodiment of the invention, the redistribution wire further comprises solder ball bumps formed on the redistribution wires.
According to an embodiment of the present invention, a thickness of the first insulating layer is greater than a thickness of the solder layer.
The invention has the following advantages:
(1) forming a blind hole in advance, and forming a through hole in the blind hole without damaging the bonding pad;
(2) the metal column with the solder layer and the dielectric layer is used as a conductive terminal, so that the fixity of the conductive terminal and the metal substrate can be enhanced, and the solder is saved;
(3) the metal posts and the metal substrate are made of the same material, so that different temperatures caused by different heat conduction coefficients can be prevented, and warping can be prevented.
Drawings
FIG. 1 is a cross-sectional view of a prior art LED light emitting panel;
fig. 2 to 8 are schematic views of the manufacturing method of the LED light emitting panel of the present invention.
Detailed Description
Referring to fig. 2 to 8, the method for manufacturing an LED light emitting panel of the present invention includes:
(1) referring to fig. 2, a metal substrate 11 is provided, the metal substrate 11 has a first surface and a second surface opposite to each other, and a first insulating layer 12 is formed on the first surface;
(2) referring to fig. 3, a plurality of annular blind holes 13 are formed in the metal substrate by using a laser grooving technique, the annular blind holes 13 penetrate through the first insulating layer 12 and penetrate into the metal substrate 11, the annular blind holes 13 surround a metal pillar 14, and the first insulating layer 12 on the metal pillar 14 is removed simultaneously;
(3) referring to fig. 4, a plurality of LED chips 15 are distributed on the first insulating layer 12 in a manner that bonding pads 16 of the LED chips are facing the first insulating layer 12, the bonding pads 16 correspond to the annular blind holes 13 one by one, the LED chips 15 completely cover the annular blind holes 13, and a molding layer 17 is formed on the first insulating layer 12, and the molding layer 17 completely covers the LED chips 15;
(4) referring to fig. 5, the second surface is thinned by mechanical polishing until the annular blind hole 13 is exposed; taking out the metal columns 14 in the annular blind holes 13 to form a plurality of through holes in the metal substrate 11, forming a dielectric layer 18 on the side surfaces of the metal columns 14, and forming a solder layer 19 on one end surface of the metal columns 14;
(5) referring to fig. 6, inserting metal columns with solder layers and dielectric layers into the through holes, respectively, and heating the metal substrate to realize reflow of the solder layers, so that the solder layers are soldered to the pads;
(6) referring to fig. 7, a second insulating layer 20 is formed on a second surface of the metal substrate 11, and a portion of the second insulating layer 20 is embedded between the metal pillar 14 and the via hole;
(7) referring to fig. 8, a trench is formed by performing photolithography on the second insulating layer 20, a conductive material is filled in the trench to form a redistribution line 21, and a solder bump 22 is formed by ball-mounting on the redistribution line 21.
Wherein, after the step (4) of taking out the plurality of metal columns 14 in the annular blind holes 13, further thinning the second surface is further included. The first insulating layer 12 is a polymer.
Wherein the diameter of the metal pillar 14 with the solder layer 18 and the dielectric layer 19 is smaller than the diameter of the through hole.
According to the above manufacturing method, the present invention also provides an LED light emitting panel including:
a metal substrate including opposing first and second surfaces and a plurality of vias extending through the first and second surfaces;
a first insulating layer formed on the first surface and having a plurality of openings corresponding to the through holes;
the LED chips are distributed on the first insulating layer in a mode that bonding pads of the LED chips face the first surface, the bonding pads correspond to the through holes and the openings one by one, and the LED chips completely cover the through holes and the openings;
the plastic packaging layer is formed on the first surface and completely covers the LED chip;
the metal column is provided with a solder layer and a dielectric layer, the dielectric layer is formed on the side surface of the metal column, the solder layer is formed on one end surface of the metal column, the metal column is inserted into the through hole, and the solder layer is welded with the bonding pad through reflow;
a second insulating layer formed on a second surface of the metal substrate and formed within a redistribution line within the second insulating layer.
The diameter of the metal column with the solder layer and the dielectric layer is smaller than that of the through hole, and the first insulating layer is polymer. And the solder bump is formed on the redistribution wire. The thickness of the first insulating layer is greater than that of the solder layer, thus preventing the occurrence of short circuits.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.

Claims (10)

1. A method of manufacturing an LED light-emitting panel, comprising:
(1) providing a metal substrate, wherein the metal substrate is provided with a first surface and a second surface which are opposite, and a first insulating layer is formed on the first surface;
(2) forming a plurality of annular blind holes in the metal substrate by using a laser grooving technology, wherein the annular blind holes penetrate through the first insulating layer and penetrate into the metal substrate, the annular blind holes surround a metal column, and the first insulating layer on the metal column is removed simultaneously;
(3) distributing a plurality of LED chips on the first insulating layer in a mode that bonding pads of the LED chips face the first insulating layer, wherein the bonding pads correspond to the annular blind holes one by one, the LED chips completely cover the annular blind holes, a plastic packaging layer is formed on the first insulating layer, and the plastic packaging layer completely covers the LED chips;
(4) thinning the second surface by using a mechanical polishing mode until the annular blind hole is exposed; taking out the plurality of metal columns in the annular blind holes to form a plurality of through holes in the metal substrate, forming a dielectric layer on the side surfaces of the metal columns, and forming a solder layer on one end surface of each metal column;
(5) respectively inserting metal columns with solder layers and dielectric layers into the through holes, heating the metal substrate, and realizing the reflux of the solder layers so that the solder layers are welded with the bonding pads;
(6) forming a second insulating layer on a second surface of the metal substrate, a portion of the second insulating layer being embedded between the metal pillar and the via;
(7) and photoetching the second insulating layer to form a groove, and filling a conductive substance in the groove to form a redistribution line.
2. The method of manufacturing an LED light-emitting panel according to claim 1, wherein: further comprising the step (8): and planting balls on the redistribution lines to form solder ball bumps.
3. The method of manufacturing an LED light-emitting panel according to claim 1, wherein: after the step (4) of taking out the plurality of metal columns in the annular blind hole, further thinning the second surface.
4. The method of manufacturing an LED light-emitting panel according to claim 1, wherein: the first insulating layer is a polymer.
5. The method of manufacturing an LED light-emitting panel according to claim 1, wherein: the diameter of the metal column with the solder layer and the dielectric layer is smaller than that of the through hole.
6. An LED light-emitting panel comprising:
a metal substrate including opposing first and second surfaces and a plurality of vias extending through the first and second surfaces;
a first insulating layer formed on the first surface and having a plurality of openings corresponding to the through holes;
the LED chips are distributed on the first insulating layer in a mode that bonding pads of the LED chips face the first surface, the bonding pads correspond to the through holes and the openings one by one, and the LED chips completely cover the through holes and the openings;
the plastic packaging layer is formed on the first surface and completely covers the LED chip;
the metal column is provided with a solder layer and a dielectric layer, the dielectric layer is formed on the side surface of the metal column, the solder layer is formed on one end surface of the metal column, the metal column is inserted into the through hole, and the solder layer is welded with the bonding pad through reflow;
a second insulating layer formed on a second surface of the metal substrate, and a redistribution line formed within the second insulating layer.
7. The LED light-emitting panel according to claim 6, wherein: the diameter of the metal column with the solder layer and the dielectric layer is smaller than that of the through hole.
8. The LED light-emitting panel according to claim 6, wherein: the first insulating layer is a polymer.
9. The LED light-emitting panel according to claim 6, wherein: and the solder bump is formed on the redistribution wire.
10. The LED light-emitting panel according to claim 6, wherein: the thickness of the first insulating layer is greater than the thickness of the solder layer.
CN201810628325.2A 2018-06-19 2018-06-19 LED light-emitting panel and manufacturing method thereof Active CN108682631B (en)

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CN108682631B true CN108682631B (en) 2020-05-01

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Publication number Priority date Publication date Assignee Title
CN110634829A (en) * 2019-08-29 2019-12-31 上海先方半导体有限公司 Fan-out type chip packaging structure and preparation method
CN113644183A (en) * 2021-09-03 2021-11-12 昆山兴协和科技股份有限公司 Light emitting diode and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1763943A (en) * 2004-09-30 2006-04-26 Tdk株式会社 Wiring board and wiring board manufacturing method
CN102136436A (en) * 2010-12-17 2011-07-27 无锡中微高科电子有限公司 Welding column welding method for integrated circuit package
CN106449573A (en) * 2016-11-16 2017-02-22 宁波麦思电子科技有限公司 Metal adapter plate with vertical via interconnect and manufacturing method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142623A (en) * 2001-10-31 2003-05-16 Hitachi Ltd Wiring board, manufacturing method therefor, semiconductor device and base substrate for forming the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1763943A (en) * 2004-09-30 2006-04-26 Tdk株式会社 Wiring board and wiring board manufacturing method
CN102136436A (en) * 2010-12-17 2011-07-27 无锡中微高科电子有限公司 Welding column welding method for integrated circuit package
CN106449573A (en) * 2016-11-16 2017-02-22 宁波麦思电子科技有限公司 Metal adapter plate with vertical via interconnect and manufacturing method thereof

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