CN108682631A - A kind of LED luminescent panels and its manufacturing method - Google Patents
A kind of LED luminescent panels and its manufacturing method Download PDFInfo
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- CN108682631A CN108682631A CN201810628325.2A CN201810628325A CN108682631A CN 108682631 A CN108682631 A CN 108682631A CN 201810628325 A CN201810628325 A CN 201810628325A CN 108682631 A CN108682631 A CN 108682631A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 78
- 229910000679 solder Inorganic materials 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229920000642 polymer Polymers 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000010992 reflux Methods 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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Abstract
本发明提供了一种LED发光面板及其制造方法，其预先形成盲孔，再将盲孔形成通孔，不会对焊盘造成损伤；带有焊料层和介质层的金属柱作为导电端子，可以增强其与金属基板的固定性，且节省焊料。此外，金属柱与金属基板为相同材料，防止因导热系数不同而导致的温度不同，可防止翘曲。
The invention provides an LED light-emitting panel and a manufacturing method thereof. The blind hole is formed in advance, and then the blind hole is formed into a through hole without causing damage to the pad; the metal column with a solder layer and a dielectric layer is used as a conductive terminal, It can enhance its fixation with the metal substrate and save solder. In addition, the metal post is made of the same material as the metal substrate, which prevents temperature differences due to differences in thermal conductivity and prevents warpage.
Description
技术领域technical field
本发明涉及LED封装领域，尤其涉及一种LED发光面板及其制造方法。The invention relates to the field of LED packaging, in particular to an LED light-emitting panel and a manufacturing method thereof.
背景技术Background technique
现有的LED封装多为COB形式的，例如附图1，绝缘基板1上搭载多个LED芯片2，LED芯片2倒装在所述绝缘基板1上，然后经由封装树脂4进行密封，并对绝缘基板1进行背面钻孔且填充导电物质形成通孔3以实现LED芯片的端子引出，其需要通过激光钻孔或者腐蚀等工艺实现钻孔，在最后阶段会对LED的焊盘造成损坏，不利于封装的可靠性。Most of the existing LED packages are in the form of COB, for example, in Figure 1, a plurality of LED chips 2 are mounted on the insulating substrate 1, and the LED chips 2 are flip-chip mounted on the insulating substrate 1, and then sealed by encapsulating resin 4, and the The back of the insulating substrate 1 is drilled and filled with a conductive material to form a through hole 3 to realize the terminal extraction of the LED chip. It needs to be drilled through laser drilling or etching, which will cause damage to the pad of the LED in the final stage. Conducive to the reliability of the package.
发明内容Contents of the invention
基于解决上述问题，本发明提供了一种LED发光面板的制造方法，包括：Based on solving the above problems, the present invention provides a method for manufacturing an LED light-emitting panel, including:
（1）提供一金属基板，所述金属基板具有相对的第一表面和第二表面，在所述第一表面上形成第一绝缘层；(1) providing a metal substrate, the metal substrate has an opposite first surface and a second surface, and a first insulating layer is formed on the first surface;
（2）利用激光开槽技术在所述金属基板内形成多个环形盲孔，所述环形盲孔贯穿所述第一绝缘层且深入所述金属基板内部，所述环形盲孔围绕一金属柱，所述金属柱上的第一绝缘层被同时去除；(2) Using laser slotting technology to form a plurality of annular blind holes in the metal substrate, the annular blind holes penetrate the first insulating layer and go deep into the metal substrate, and the annular blind holes surround a metal post , the first insulating layer on the metal pillar is removed simultaneously;
（3）将多个LED芯片以其焊盘朝向所述第一绝缘层的方式分布在所述第一绝缘层上，所述焊盘一一对应于所述环形盲孔，且所述LED芯片将所述环形盲孔完全盖住，并在所述第一绝缘层上形成塑封层，所述塑封层完全覆盖所述LED芯片；(3) distributing a plurality of LED chips on the first insulating layer with their pads facing the first insulating layer, the pads corresponding to the annular blind holes one by one, and the LED chips completely cover the annular blind hole, and form a plastic sealing layer on the first insulating layer, the plastic sealing layer completely covers the LED chip;
（4）将所述第二表面利用机械抛光的方式进行减薄，直到露出所述环形盲孔；将所述环形盲孔中的多个金属柱取出以在所述金属基板内形成多个通孔，并在所述金属柱的侧面形成介质层，在所述金属柱的一端面形成焊料层；(4) Thinning the second surface by mechanical polishing until the annular blind hole is exposed; taking out a plurality of metal posts in the annular blind hole to form a plurality of through holes in the metal substrate; holes, and a dielectric layer is formed on the side of the metal pillar, and a solder layer is formed on one end of the metal pillar;
（5）将带有焊料层和介质层的金属柱分别插入所述通孔中，并对所述金属基板进行加热，实现焊料层的回流，使得所述焊料层与所述焊盘焊接；(5) inserting metal pillars with a solder layer and a dielectric layer into the through holes respectively, and heating the metal substrate to realize reflow of the solder layer, so that the solder layer is welded to the pad;
（6）在所述金属基板的第二表面上形成第二绝缘层，所述第二绝缘层的部分嵌入所述金属柱与所述通孔之间；(6) forming a second insulating layer on the second surface of the metal substrate, and a part of the second insulating layer is embedded between the metal pillar and the through hole;
（7）对所述第二绝缘层进行光刻形成沟槽，并在所述沟槽内填充导电物质以形成再分布线。(7) Perform photolithography on the second insulating layer to form grooves, and fill the grooves with conductive substances to form redistribution lines.
根据本发明的实施例，还包括步骤（8）：在所述再分布线上植球形成焊球凸点。According to an embodiment of the present invention, a step (8) is further included: planting balls on the redistribution lines to form solder ball bumps.
根据本发明的实施例，在步骤（4）的将所述环形盲孔中的多个金属柱取出之后，还包括对所述第二表面进行进一步的减薄。According to an embodiment of the present invention, after the step (4) of taking out the plurality of metal posts in the annular blind hole, further thinning the second surface is also included.
根据本发明的实施例，所述第一绝缘层为聚合物。According to an embodiment of the present invention, the first insulating layer is a polymer.
根据本发明的实施例，所述带有焊料层和介质层的金属柱的直径小于所述通孔的直径。According to an embodiment of the present invention, the diameter of the metal post with the solder layer and the dielectric layer is smaller than the diameter of the through hole.
本发明还提供了一种LED发光面板，包括：The present invention also provides an LED light-emitting panel, comprising:
金属基板，所述金属基板包括相对的第一表面和第二表面以及贯穿所述第一表面和第二表面的多个通孔；a metal substrate comprising opposing first and second surfaces and a plurality of through holes penetrating the first and second surfaces;
第一绝缘层，形成于所述第一表面上，且具有与所述通孔对应的多个开口；a first insulating layer formed on the first surface and having a plurality of openings corresponding to the through holes;
多个LED芯片，以其焊盘朝向所述第一表面的方式分布在所述第一绝缘层上，所述焊盘一一对应于所述通孔和开口，且所述LED芯片将所述通孔和开口完全盖住；A plurality of LED chips are distributed on the first insulating layer with their pads facing the first surface, the pads correspond to the through holes and openings one by one, and the LED chips connect the Through-holes and openings are completely covered;
塑封层，形成在第一表面上且完全覆盖所述LED芯片；a plastic encapsulation layer formed on the first surface and completely covering the LED chip;
带有焊料层和介质层的金属柱，所述介质层形成在在所述金属柱的侧面，所述焊料层形成在所述金属柱的一端面，所述金属柱插入所述通孔中，并通过回流使得所述焊料层与所述焊盘焊接；a metal post with a solder layer and a dielectric layer, the dielectric layer is formed on the side of the metal post, the solder layer is formed on one end surface of the metal post, and the metal post is inserted into the through hole, and welding the solder layer to the pad by reflow;
第二绝缘层，形成在所述金属基板的第二表面，并且在所述第二绝缘层内形成于再分布线。A second insulating layer is formed on the second surface of the metal substrate, and is formed on the redistribution lines in the second insulating layer.
根据本发明的实施例，所述带有焊料层和介质层的金属柱的直径小于所述通孔的直径。According to an embodiment of the present invention, the diameter of the metal post with the solder layer and the dielectric layer is smaller than the diameter of the through hole.
根据本发明的实施例，所述第一绝缘层为聚合物。According to an embodiment of the present invention, the first insulating layer is a polymer.
根据本发明的实施例，还包括焊球凸点，形成在所述再分布线上。According to an embodiment of the present invention, it further includes solder ball bumps formed on the redistribution lines.
根据本发明的实施例，所述第一绝缘层的厚度大于所述焊料层的厚度。According to an embodiment of the present invention, the thickness of the first insulating layer is greater than the thickness of the solder layer.
本发明的优点如下：The advantages of the present invention are as follows:
（1）预先形成盲孔，再将盲孔形成通孔，不会对焊盘造成损伤；(1) Blind holes are formed in advance, and then blind holes are formed into through holes, which will not cause damage to the pad;
（2）带有焊料层和介电层的金属柱作为导电端子，可以增强其与金属基板的固定性，且节省焊料；(2) The metal post with solder layer and dielectric layer is used as a conductive terminal, which can enhance its fixation with the metal substrate and save solder;
（3）金属柱与金属基板为相同材料，防止因导热系数不同而导致的温度不同，可防止翘曲。(3) The metal pillar and the metal substrate are made of the same material, which prevents temperature differences due to differences in thermal conductivity and prevents warping.
附图说明Description of drawings
图1为现有技术的LED发光面板的剖视图；Fig. 1 is the sectional view of the LED light-emitting panel of prior art;
图2-8为本发明的LED发光面板制造方法的示意图。2-8 are schematic diagrams of the manufacturing method of the LED light-emitting panel of the present invention.
具体实施方式Detailed ways
参见图2-8，本发明的LED发光面板的制造方法，包括：Referring to Fig. 2-8, the manufacturing method of the LED light-emitting panel of the present invention includes:
（1）参照图2，提供一金属基板11，所述金属基板11具有相对的第一表面和第二表面，在所述第一表面上形成第一绝缘层12；(1) Referring to FIG. 2 , a metal substrate 11 is provided, the metal substrate 11 has an opposite first surface and a second surface, and a first insulating layer 12 is formed on the first surface;
（2）参照图3，利用激光开槽技术在所述金属基板内形成多个环形盲孔13，所述环形盲孔13贯穿所述第一绝缘层12且深入所述金属基板11内部，所述环形盲孔13围绕一金属柱14，所述金属柱14上的第一绝缘层12被同时去除；(2) Referring to FIG. 3 , a plurality of annular blind holes 13 are formed in the metal substrate by laser grooving technology, and the annular blind holes 13 penetrate the first insulating layer 12 and penetrate deep into the metal substrate 11 . The annular blind hole 13 surrounds a metal post 14, and the first insulating layer 12 on the metal post 14 is removed at the same time;
（3）参照图4，将多个LED芯片15以其焊盘16朝向所述第一绝缘层12的方式分布在所述第一绝缘层12上，所述焊盘16一一对应于所述环形盲孔13，且所述LED芯片15将所述环形盲孔13完全盖住，并在所述第一绝缘层12上形成塑封层17，所述塑封层17完全覆盖所述LED芯片15；(3) Referring to FIG. 4 , a plurality of LED chips 15 are distributed on the first insulating layer 12 with their pads 16 facing the first insulating layer 12 , and the pads 16 correspond to the first insulating layer 12 one by one. An annular blind hole 13, and the LED chip 15 completely covers the annular blind hole 13, and forms a plastic sealing layer 17 on the first insulating layer 12, and the plastic sealing layer 17 completely covers the LED chip 15;
（4）参照图5，将所述第二表面利用机械抛光的方式进行减薄，直到露出所述环形盲孔13；将所述环形盲孔13中的多个金属柱14取出以在所述金属基板11内形成多个通孔，并在所述金属柱14的侧面形成介质层18，在所述金属柱14的一端面形成焊料层19；(4) Referring to FIG. 5 , the second surface is thinned by mechanical polishing until the annular blind hole 13 is exposed; a plurality of metal posts 14 in the annular blind hole 13 are taken out to be placed in the A plurality of through holes are formed in the metal substrate 11, a dielectric layer 18 is formed on the side of the metal pillar 14, and a solder layer 19 is formed on one end surface of the metal pillar 14;
（5）参照图6，将带有焊料层和介质层的金属柱分别插入所述通孔中，并对所述金属基板进行加热，实现焊料层的回流，使得所述焊料层与所述焊盘焊接；(5) Referring to FIG. 6 , insert the metal pillars with the solder layer and the dielectric layer into the through holes respectively, and heat the metal substrate to realize the reflow of the solder layer, so that the solder layer and the solder layer Disc welding;
（6）参照图7，在所述金属基板11的第二表面上形成第二绝缘层20，所述第二绝缘层20的部分嵌入所述金属柱14与所述通孔之间；(6) Referring to FIG. 7 , a second insulating layer 20 is formed on the second surface of the metal substrate 11 , and a part of the second insulating layer 20 is embedded between the metal pillar 14 and the through hole;
（7）参照图8，对所述第二绝缘层20进行光刻形成沟槽，并在所述沟槽内填充导电物质以形成再分布线21，在所述再分布线21上植球形成焊球凸点22。(7) Referring to FIG. 8 , photolithography is performed on the second insulating layer 20 to form grooves, and conductive substances are filled in the grooves to form redistribution lines 21 , and ball planting is formed on the redistribution lines 21 Solder ball bumps 22 .
其中，在步骤（4）的将所述环形盲孔13中的多个金属柱14取出之后，还包括对所述第二表面进行进一步的减薄。 所述第一绝缘层12为聚合物。Wherein, after taking out the plurality of metal posts 14 in the annular blind hole 13 in step (4), further thinning the second surface is also included. The first insulating layer 12 is polymer.
其中，所述带有焊料层18和介质层19的金属柱14的直径小于所述通孔的直径。Wherein, the diameter of the metal column 14 with the solder layer 18 and the dielectric layer 19 is smaller than the diameter of the through hole.
根据上述制造方法，本发明还提供了一种LED发光面板，包括：According to the above manufacturing method, the present invention also provides an LED light-emitting panel, comprising:
金属基板，所述金属基板包括相对的第一表面和第二表面以及贯穿所述第一表面和第二表面的多个通孔；a metal substrate comprising opposing first and second surfaces and a plurality of through holes penetrating the first and second surfaces;
第一绝缘层，形成于所述第一表面上，且具有与所述通孔对应的多个开口；a first insulating layer formed on the first surface and having a plurality of openings corresponding to the through holes;
多个LED芯片，以其焊盘朝向所述第一表面的方式分布在所述第一绝缘层上，所述焊盘一一对应于所述通孔和开口，且所述LED芯片将所述通孔和开口完全盖住；A plurality of LED chips are distributed on the first insulating layer with their pads facing the first surface, the pads correspond to the through holes and openings one by one, and the LED chips connect the Through-holes and openings are completely covered;
塑封层，形成在第一表面上且完全覆盖所述LED芯片；a plastic encapsulation layer formed on the first surface and completely covering the LED chip;
带有焊料层和介质层的金属柱，所述介质层形成在在所述金属柱的侧面，所述焊料层形成在所述金属柱的一端面，所述金属柱插入所述通孔中，并通过回流使得所述焊料层与所述焊盘焊接；a metal post with a solder layer and a dielectric layer, the dielectric layer is formed on the side of the metal post, the solder layer is formed on one end surface of the metal post, and the metal post is inserted into the through hole, and soldering the solder layer to the pad by reflowing;
第二绝缘层，形成在所述金属基板的第二表面，并且在所述第二绝缘层内形成于再分布线。A second insulating layer is formed on the second surface of the metal substrate, and is formed on the redistribution lines in the second insulating layer.
其中，所述带有焊料层和介质层的金属柱的直径小于所述通孔的直径，所述第一绝缘层为聚合物。还包括焊球凸点，形成在所述再分布线上。所述第一绝缘层的厚度大于所述焊料层的厚度，这样防止短路的发生。Wherein, the diameter of the metal column with the solder layer and the dielectric layer is smaller than the diameter of the through hole, and the first insulating layer is a polymer. Solder ball bumps are also included, formed on the redistribution lines. The thickness of the first insulating layer is greater than that of the solder layer, so as to prevent the occurrence of short circuit.
最后应说明的是：显然，上述实施例仅仅是为清楚地说明本发明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。Finally, it should be noted that: obviously, the above-mentioned embodiments are only examples for clearly illustrating the present invention, rather than limiting the implementation. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. However, obvious changes or modifications derived therefrom are still within the protection scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810628325.2A CN108682631B (en) | 2018-06-19 | 2018-06-19 | LED light-emitting panel and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810628325.2A CN108682631B (en) | 2018-06-19 | 2018-06-19 | LED light-emitting panel and manufacturing method thereof |
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| CN108682631A true CN108682631A (en) | 2018-10-19 |
| CN108682631B CN108682631B (en) | 2020-05-01 |
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| CN201810628325.2A Active CN108682631B (en) | 2018-06-19 | 2018-06-19 | LED light-emitting panel and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110634829A (en) * | 2019-08-29 | 2019-12-31 | 上海先方半导体有限公司 | Fan-out type chip packaging structure and preparation method |
| CN113644183A (en) * | 2021-09-03 | 2021-11-12 | 昆山兴协和科技股份有限公司 | Light emitting diode and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003142623A (en) * | 2001-10-31 | 2003-05-16 | Hitachi Ltd | Wiring board and manufacturing method thereof, semiconductor device, and base substrate for forming wiring board |
| CN1763943A (en) * | 2004-09-30 | 2006-04-26 | Tdk株式会社 | Wiring board and wiring board manufacturing method |
| CN102136436A (en) * | 2010-12-17 | 2011-07-27 | 无锡中微高科电子有限公司 | Post bonding method for integrated circuit packaging |
| CN106449573A (en) * | 2016-11-16 | 2017-02-22 | 宁波麦思电子科技有限公司 | Metal adapter plate with vertical via interconnect and manufacturing method thereof |
-
2018
- 2018-06-19 CN CN201810628325.2A patent/CN108682631B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003142623A (en) * | 2001-10-31 | 2003-05-16 | Hitachi Ltd | Wiring board and manufacturing method thereof, semiconductor device, and base substrate for forming wiring board |
| CN1763943A (en) * | 2004-09-30 | 2006-04-26 | Tdk株式会社 | Wiring board and wiring board manufacturing method |
| CN102136436A (en) * | 2010-12-17 | 2011-07-27 | 无锡中微高科电子有限公司 | Post bonding method for integrated circuit packaging |
| CN106449573A (en) * | 2016-11-16 | 2017-02-22 | 宁波麦思电子科技有限公司 | Metal adapter plate with vertical via interconnect and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110634829A (en) * | 2019-08-29 | 2019-12-31 | 上海先方半导体有限公司 | Fan-out type chip packaging structure and preparation method |
| CN113644183A (en) * | 2021-09-03 | 2021-11-12 | 昆山兴协和科技股份有限公司 | Light emitting diode and manufacturing method thereof |
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| CN108682631B (en) | 2020-05-01 |
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