JP2006194878A5 - - Google Patents

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Publication number
JP2006194878A5
JP2006194878A5 JP2006002870A JP2006002870A JP2006194878A5 JP 2006194878 A5 JP2006194878 A5 JP 2006194878A5 JP 2006002870 A JP2006002870 A JP 2006002870A JP 2006002870 A JP2006002870 A JP 2006002870A JP 2006194878 A5 JP2006194878 A5 JP 2006194878A5
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JP
Japan
Prior art keywords
substrate
etching
measurement
light beam
etch depth
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JP2006002870A
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English (en)
Japanese (ja)
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JP5392972B2 (ja
JP2006194878A (ja
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Priority claimed from US11/031,400 external-priority patent/US20060154388A1/en
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Publication of JP2006194878A publication Critical patent/JP2006194878A/ja
Publication of JP2006194878A5 publication Critical patent/JP2006194878A5/ja
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Publication of JP5392972B2 publication Critical patent/JP5392972B2/ja
Expired - Fee Related legal-status Critical Current
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JP2006002870A 2005-01-08 2006-01-10 透明基板のための統合計測チャンバ Expired - Fee Related JP5392972B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/031,400 US20060154388A1 (en) 2005-01-08 2005-01-08 Integrated metrology chamber for transparent substrates
US11/031,400 2005-01-08

Publications (3)

Publication Number Publication Date
JP2006194878A JP2006194878A (ja) 2006-07-27
JP2006194878A5 true JP2006194878A5 (enExample) 2009-03-05
JP5392972B2 JP5392972B2 (ja) 2014-01-22

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JP2006002870A Expired - Fee Related JP5392972B2 (ja) 2005-01-08 2006-01-10 透明基板のための統合計測チャンバ

Country Status (5)

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US (2) US20060154388A1 (enExample)
EP (1) EP1679548A1 (enExample)
JP (1) JP5392972B2 (enExample)
KR (1) KR101252068B1 (enExample)
TW (1) TWI375288B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050197721A1 (en) * 2004-02-20 2005-09-08 Yung-Cheng Chen Control of exposure energy on a substrate
US7601272B2 (en) * 2005-01-08 2009-10-13 Applied Materials, Inc. Method and apparatus for integrating metrology with etch processing
US20060154388A1 (en) * 2005-01-08 2006-07-13 Richard Lewington Integrated metrology chamber for transparent substrates
CN100459087C (zh) * 2006-07-21 2009-02-04 中芯国际集成电路制造(上海)有限公司 确定半导体特征的方法和用于制造集成电路的方法
US8012857B2 (en) * 2007-08-07 2011-09-06 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8859396B2 (en) 2007-08-07 2014-10-14 Semiconductor Components Industries, Llc Semiconductor die singulation method
KR20100061731A (ko) * 2007-09-14 2010-06-08 퀄컴 엠이엠스 테크놀로지스, 인크. Mems 제조에 이용되는 에칭 방법
US7765077B2 (en) * 2007-09-21 2010-07-27 Tokyo Electron Limited Method and apparatus for creating a Spacer-Optimization (S-O) library
CN101889325B (zh) * 2007-12-06 2014-05-07 因特瓦克公司 用于衬底的两侧溅射蚀刻的系统和方法
US7935464B2 (en) * 2008-10-30 2011-05-03 Applied Materials, Inc. System and method for self-aligned dual patterning
US7904273B2 (en) * 2009-02-16 2011-03-08 International Business Machines Corporation In-line depth measurement for thru silicon via
US8232115B2 (en) 2009-09-25 2012-07-31 International Business Machines Corporation Test structure for determination of TSV depth
US8956809B2 (en) * 2012-08-03 2015-02-17 Applied Materials, Inc. Apparatus and methods for etching quartz substrate in photomask manufacturing applications
US9136173B2 (en) 2012-11-07 2015-09-15 Semiconductor Components Industries, Llc Singulation method for semiconductor die having a layer of material along one major surface
US9484260B2 (en) 2012-11-07 2016-11-01 Semiconductor Components Industries, Llc Heated carrier substrate semiconductor die singulation method
US20150132959A1 (en) * 2013-11-08 2015-05-14 Leonard TEDESCHI Pattern formation and transfer directly on silicon based films
US10840102B2 (en) * 2013-11-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated system, integrated system operation method and film treatment method
US9418894B2 (en) 2014-03-21 2016-08-16 Semiconductor Components Industries, Llc Electronic die singulation method
US9385041B2 (en) 2014-08-26 2016-07-05 Semiconductor Components Industries, Llc Method for insulating singulated electronic die
US10095102B2 (en) * 2016-04-12 2018-10-09 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask having a plurality of shielding layers
US10366923B2 (en) 2016-06-02 2019-07-30 Semiconductor Components Industries, Llc Method of separating electronic devices having a back layer and apparatus
US10373869B2 (en) 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
US12112959B2 (en) 2018-09-04 2024-10-08 Tokyo Electron Limited Processing systems and platforms for roughness reduction of materials using illuminated etch solutions
KR102740093B1 (ko) * 2018-12-14 2024-12-06 도쿄엘렉트론가부시키가이샤 조명된 에칭 용액을 사용하여 재료의 거칠기를 감소시키기 위한 공정 시스템 및 플랫폼
US10818551B2 (en) 2019-01-09 2020-10-27 Semiconductor Components Industries, Llc Plasma die singulation systems and related methods
JP7365878B2 (ja) * 2019-12-06 2023-10-20 東京エレクトロン株式会社 計測装置及び計測方法

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795056A (en) * 1980-12-05 1982-06-12 Hitachi Ltd Appearance inspecting process
JPS61290312A (ja) 1985-06-19 1986-12-20 Hitachi Ltd 断面形状測定装置
US5109430A (en) * 1986-07-22 1992-04-28 Schlumberger Technologies, Inc. Mask alignment and measurement of critical dimensions in integrated circuits
US4767496A (en) * 1986-12-11 1988-08-30 Siemens Aktiengesellschaft Method for controlling and supervising etching processes
US4911103A (en) * 1987-07-17 1990-03-27 Texas Instruments Incorporated Processing apparatus and method
JPH0492444A (ja) * 1990-08-08 1992-03-25 Hitachi Ltd 処理方法および装置
US5171393A (en) * 1991-07-29 1992-12-15 Moffat William A Wafer processing apparatus
US5499733A (en) * 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5653894A (en) * 1992-12-14 1997-08-05 Lucent Technologies Inc. Active neural network determination of endpoint in a plasma etch process
US5891352A (en) * 1993-09-16 1999-04-06 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5452521A (en) * 1994-03-09 1995-09-26 Niewmierzycki; Leszek Workpiece alignment structure and method
US5607800A (en) 1995-02-15 1997-03-04 Lucent Technologies Inc. Method and arrangement for characterizing micro-size patterns
US5711849A (en) * 1995-05-03 1998-01-27 Daniel L. Flamm Process optimization in gas phase dry etching
US6001699A (en) * 1996-01-23 1999-12-14 Intel Corporation Highly selective etch process for submicron contacts
US5798529A (en) * 1996-05-28 1998-08-25 International Business Machines Corporation Focused ion beam metrology
US6060022A (en) * 1996-07-05 2000-05-09 Beckman Coulter, Inc. Automated sample processing system including automatic centrifuge device
US5944940A (en) * 1996-07-09 1999-08-31 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
US5948203A (en) * 1996-07-29 1999-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring
US5913102A (en) * 1997-03-20 1999-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming patterned photoresist layers with enhanced critical dimension uniformity
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US5976740A (en) * 1997-08-28 1999-11-02 International Business Machines Corporation Process for controlling exposure dose or focus parameters using tone reversing pattern
US5965309A (en) * 1997-08-28 1999-10-12 International Business Machines Corporation Focus or exposure dose parameter control system using tone reversing patterns
US6161054A (en) * 1997-09-22 2000-12-12 On-Line Technologies, Inc. Cell control method and apparatus
US6129807A (en) * 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
US6124212A (en) * 1997-10-08 2000-09-26 Taiwan Semiconductor Manufacturing Co. High density plasma (HDP) etch method for suppressing micro-loading effects when etching polysilicon layers
US5963329A (en) * 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines
US6148239A (en) * 1997-12-12 2000-11-14 Advanced Micro Devices, Inc. Process control system using feed forward control threads based on material groups
US6054710A (en) * 1997-12-18 2000-04-25 Cypress Semiconductor Corp. Method and apparatus for obtaining two- or three-dimensional information from scanning electron microscopy
US6452677B1 (en) * 1998-02-13 2002-09-17 Micron Technology Inc. Method and apparatus for detecting defects in the manufacture of an electronic device
US6033814A (en) * 1998-02-26 2000-03-07 Micron Technology, Inc. Method for multiple process parameter matching
US6067357A (en) * 1998-03-04 2000-05-23 Genesys Telecommunications Laboratories Inc. Telephony call-center scripting by Petri Net principles and techniques
IL125338A0 (en) * 1998-07-14 1999-03-12 Nova Measuring Instr Ltd Method and apparatus for monitoring and control of photolithography exposure and processing tools
JP4601744B2 (ja) * 1998-07-14 2010-12-22 ノバ メジャリング インスツルメンツ リミテッド フォトリソグラフィープロセスを制御するための方法およびシステム
US6424733B2 (en) * 1998-07-20 2002-07-23 Micron Technology, Inc. Method and apparatus for inspecting wafers
US6183594B1 (en) * 1998-09-25 2001-02-06 International Business Machines Corporation Method and system for detecting the end-point in etching processes
JP3090139B1 (ja) * 1999-03-05 2000-09-18 ミノルタ株式会社 プロジェクタ用光学系
WO2000058188A1 (en) * 1999-03-25 2000-10-05 N & K Technology, Inc. Wafer handling robot having x-y stage for wafer handling and positioning
US6455437B1 (en) * 1999-04-07 2002-09-24 Applied Materials Inc. Method and apparatus for monitoring the process state of a semiconductor device fabrication process
EP1065567A3 (en) * 1999-06-29 2001-05-16 Applied Materials, Inc. Integrated critical dimension control
US6166509A (en) * 1999-07-07 2000-12-26 Applied Materials, Inc. Detection system for substrate clamp
US6368975B1 (en) * 1999-07-07 2002-04-09 Applied Materials, Inc. Method and apparatus for monitoring a process by employing principal component analysis
US6583065B1 (en) 1999-08-03 2003-06-24 Applied Materials Inc. Sidewall polymer forming gas additives for etching processes
EP1079426A1 (en) 1999-08-16 2001-02-28 Applied Materials, Inc. Integration scheme using selfplanarized dielectric layer for shallow trench isolation (STI)
US6225639B1 (en) 1999-08-27 2001-05-01 Agere Systems Guardian Corp. Method of monitoring a patterned transfer process using line width metrology
US6707544B1 (en) 1999-09-07 2004-03-16 Applied Materials, Inc. Particle detection and embedded vision system to enhance substrate yield and throughput
US6721045B1 (en) * 1999-09-07 2004-04-13 Applied Materials, Inc. Method and apparatus to provide embedded substrate process monitoring through consolidation of multiple process inspection techniques
US6413867B1 (en) * 1999-12-23 2002-07-02 Applied Materials, Inc. Film thickness control using spectral interferometry
JP3974319B2 (ja) * 2000-03-30 2007-09-12 株式会社東芝 エッチング方法
EP1269521A1 (en) * 2000-04-07 2003-01-02 Varian Semiconductor Equipment Associates Inc. WAFER ORIENTATION SENSOR FOR GaAs WAFERS
US6245581B1 (en) * 2000-04-19 2001-06-12 Advanced Micro Devices, Inc. Method and apparatus for control of critical dimension using feedback etch control
US6411389B1 (en) * 2000-05-03 2002-06-25 The Regents Of The University Of Claifornia Optical monitor for real time thickness change measurements via lateral-translation induced phase-stepping interferometry
WO2001084382A1 (en) 2000-05-04 2001-11-08 Kla-Tencor, Inc. Methods and systems for lithography process control
US6625512B1 (en) 2000-07-25 2003-09-23 Advanced Micro Devices, Inc. Method and apparatus for performing final critical dimension control
IL139368A (en) 2000-10-30 2006-12-10 Nova Measuring Instr Ltd Process control for microlithography
US6625497B2 (en) * 2000-11-20 2003-09-23 Applied Materials Inc. Semiconductor processing module with integrated feedback/feed forward metrology
US20020147960A1 (en) * 2001-01-26 2002-10-10 Applied Materials, Inc. Method and apparatus for determining scheduling for wafer processing in cluster tools with integrated metrology and defect control
US6653231B2 (en) * 2001-03-28 2003-11-25 Advanced Micro Devices, Inc. Process for reducing the critical dimensions of integrated circuit device features
US6525829B1 (en) * 2001-05-25 2003-02-25 Novellus Systems, Inc. Method and apparatus for in-situ measurement of thickness of copper oxide film using optical reflectivity
US6479309B1 (en) * 2001-05-25 2002-11-12 Advanced Micro Devices, Inc. Method and apparatus for determining process layer conformality
US20030000922A1 (en) * 2001-06-27 2003-01-02 Ramkumar Subramanian Using scatterometry to develop real time etch image
US6649426B2 (en) 2001-06-28 2003-11-18 Advanced Micro Devices, Inc. System and method for active control of spacer deposition
US20030045098A1 (en) * 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
US20030052084A1 (en) * 2001-09-18 2003-03-20 Tabery Cyrus E. In-situ or ex-situ profile monitoring of phase openings on alternating phase shifting masks by scatterometry
US20030092281A1 (en) * 2001-11-13 2003-05-15 Chartered Semiconductors Manufactured Limited Method for organic barc and photoresist trimming process
US6960416B2 (en) * 2002-03-01 2005-11-01 Applied Materials, Inc. Method and apparatus for controlling etch processes during fabrication of semiconductor devices
JP4197103B2 (ja) 2002-04-15 2008-12-17 株式会社荏原製作所 ポリッシング装置
US6762130B2 (en) * 2002-05-31 2004-07-13 Texas Instruments Incorporated Method of photolithographically forming extremely narrow transistor gate elements
US6825487B2 (en) * 2002-07-30 2004-11-30 Seh America, Inc. Method for isolation of wafer support-related crystal defects
JP4584531B2 (ja) * 2002-08-02 2010-11-24 株式会社日立製作所 異物モニタリングシステム
US6939811B2 (en) * 2002-09-25 2005-09-06 Lam Research Corporation Apparatus and method for controlling etch depth
US20040200574A1 (en) * 2003-04-11 2004-10-14 Applied Materials, Inc. Method for controlling a process for fabricating integrated devices
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process
US7250309B2 (en) * 2004-01-09 2007-07-31 Applied Materials, Inc. Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control
KR100568867B1 (ko) * 2004-03-18 2006-04-10 삼성전자주식회사 웨이퍼 좌표감지장치 및 그 웨이퍼 좌표감지 기능을 갖는반도체 제조설비
US7076320B1 (en) * 2004-05-04 2006-07-11 Advanced Micro Devices, Inc. Scatterometry monitor in cluster process tool environment for advanced process control (APC)
US6961626B1 (en) * 2004-05-28 2005-11-01 Applied Materials, Inc Dynamic offset and feedback threshold
US20060154388A1 (en) * 2005-01-08 2006-07-13 Richard Lewington Integrated metrology chamber for transparent substrates
US7601272B2 (en) * 2005-01-08 2009-10-13 Applied Materials, Inc. Method and apparatus for integrating metrology with etch processing

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