JP2006186331A5 - - Google Patents
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- Publication number
- JP2006186331A5 JP2006186331A5 JP2005341420A JP2005341420A JP2006186331A5 JP 2006186331 A5 JP2006186331 A5 JP 2006186331A5 JP 2005341420 A JP2005341420 A JP 2005341420A JP 2005341420 A JP2005341420 A JP 2005341420A JP 2006186331 A5 JP2006186331 A5 JP 2006186331A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- porous insulating
- insulating film
- connection hole
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 14
- 239000013078 crystal Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 230000005660 hydrophilic surface Effects 0.000 claims 6
- 239000005871 repellent Substances 0.000 claims 6
- 230000002940 repellent Effects 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- 238000007599 discharging Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 239000007788 liquid Substances 0.000 claims 3
- 239000002245 particle Substances 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005341420A JP2006186331A (ja) | 2004-11-30 | 2005-11-28 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004347810 | 2004-11-30 | ||
| JP2005341420A JP2006186331A (ja) | 2004-11-30 | 2005-11-28 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006186331A JP2006186331A (ja) | 2006-07-13 |
| JP2006186331A5 true JP2006186331A5 (enExample) | 2008-12-18 |
Family
ID=36739171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005341420A Withdrawn JP2006186331A (ja) | 2004-11-30 | 2005-11-28 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006186331A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5121178B2 (ja) * | 2006-07-24 | 2013-01-16 | 京セラ株式会社 | 弾性表面波装置及び通信装置 |
| JP2011159885A (ja) * | 2010-02-02 | 2011-08-18 | Toshiba Corp | 薄膜の製造方法 |
| JP5702173B2 (ja) * | 2011-01-31 | 2015-04-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および多孔質絶縁層の改質方法 |
| JP6163820B2 (ja) * | 2013-03-27 | 2017-07-19 | 日本ゼオン株式会社 | エッチング方法 |
| KR20160024872A (ko) * | 2013-06-27 | 2016-03-07 | 피코순 오와이 | 위조-방지 서명 |
| KR102437416B1 (ko) * | 2015-08-28 | 2022-08-30 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3951044B2 (ja) * | 2002-03-13 | 2007-08-01 | セイコーエプソン株式会社 | 成膜方法、並びにその方法を用いて製造したデバイス |
| JP2004241758A (ja) * | 2003-01-17 | 2004-08-26 | Advanced Lcd Technologies Development Center Co Ltd | 配線金属層の形成方法および配線金属層 |
| JP2004259753A (ja) * | 2003-02-24 | 2004-09-16 | Fujitsu Ltd | 半導体装置およびその製造方法 |
-
2005
- 2005-11-28 JP JP2005341420A patent/JP2006186331A/ja not_active Withdrawn
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