JP2006179880A5 - - Google Patents
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- Publication number
- JP2006179880A5 JP2006179880A5 JP2005338507A JP2005338507A JP2006179880A5 JP 2006179880 A5 JP2006179880 A5 JP 2006179880A5 JP 2005338507 A JP2005338507 A JP 2005338507A JP 2005338507 A JP2005338507 A JP 2005338507A JP 2006179880 A5 JP2006179880 A5 JP 2006179880A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive
- semiconductor device
- buffer layer
- perforated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 29
- 238000000034 method Methods 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 12
- 239000004020 conductor Substances 0.000 claims 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 2
- 239000011148 porous material Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005338507A JP5089036B2 (ja) | 2004-11-26 | 2005-11-24 | 半導体装置の作製方法及び発光装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004341400 | 2004-11-26 | ||
| JP2004341400 | 2004-11-26 | ||
| JP2005338507A JP5089036B2 (ja) | 2004-11-26 | 2005-11-24 | 半導体装置の作製方法及び発光装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006179880A JP2006179880A (ja) | 2006-07-06 |
| JP2006179880A5 true JP2006179880A5 (enExample) | 2009-01-15 |
| JP5089036B2 JP5089036B2 (ja) | 2012-12-05 |
Family
ID=36733646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005338507A Expired - Fee Related JP5089036B2 (ja) | 2004-11-26 | 2005-11-24 | 半導体装置の作製方法及び発光装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5089036B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008258252A (ja) * | 2007-04-02 | 2008-10-23 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法 |
| JP5261744B2 (ja) * | 2007-11-20 | 2013-08-14 | コニカミノルタ株式会社 | 有機ｔｆｔの製造方法、及び有機ｔｆｔ |
| JP2010167388A (ja) * | 2009-01-26 | 2010-08-05 | Emprie Technology Development LLC | ナノポーラス表面を有する製品の製造方法 |
| JP4815496B2 (ja) * | 2009-01-26 | 2011-11-16 | エンパイア テクノロジー ディベロップメント エルエルシー | ナノポーラス表面を有する立体製品の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08262492A (ja) * | 1995-03-27 | 1996-10-11 | Toshiba Corp | 液晶表示装置 |
| JP2004023071A (ja) * | 2002-06-20 | 2004-01-22 | Mitsubishi Chemicals Corp | 電子デバイスの作製方法及び電子デバイス |
| JP4219822B2 (ja) * | 2003-01-14 | 2009-02-04 | シャープ株式会社 | 配線材料、配線基板及びその製造方法並びに表示パネル |
| JP2005019955A (ja) * | 2003-05-30 | 2005-01-20 | Seiko Epson Corp | 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器 |
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2005
- 2005-11-24 JP JP2005338507A patent/JP5089036B2/ja not_active Expired - Fee Related