JP2006170785A - Pressure sensitive element, pressure detecting device, and package for pressure detecting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pressure detecting device and a package for the pressure detecting device, which can detect an external pressure excellently and also detect such a state that waste exists between a diaphragm and an insulating base. <P>SOLUTION: The pressure detecting device is equipped with the insulating base 1 having a mount section 1b on which a semiconductor element 3 is mounted; a first electrode 7 which is formed on the surface of the insulating base 1 and is used for forming a capacitance; the diaphragm 2 which is disposed at a position opposite to the surface of the insulating base 1; a second electrode 9 which is formed on the surface of the diaphragm 2 so as to be opposite to the first electrode 7 and is used for forming a capacitance; and a spacer 11 which is in the form of a frame and made up between the surface of the insulating base 1 and the surface of the diaphragm 2. Furthermore, an inspection electrode 12 is disposed in a space formed by the insulating base 1, the diaphragm 2 and the spacer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a pressure detection device package, a pressure detection device, and a pressure sensitive element used in a pressure detection device for detecting pressure.

  Conventionally, a capacitance type pressure detection device is known as a pressure detection device for detecting pressure. As described in Patent Document 1 below, a package used in this capacitance type pressure detection device includes an insulating base having a mounting portion on which a semiconductor element is mounted, and a static electricity formed on the surface of the insulating base. A first electrode for forming a capacitance, a diaphragm joined in a flexible state to the surface of an insulating substrate, and a capacitor for forming a capacitance deposited on the surface of the diaphragm so as to face the first electrode The second electrode. In order to form a capacitance by the first electrode and the second electrode, it is necessary to provide a predetermined interval between these electrodes, and a spacer is provided between the diaphragm and the insulating base.

  Here, as a method of joining the diaphragm with a high precision placed at a predetermined position on the insulating base, a method of joining using an assembly jig is generally used. For example, an assembly jig having an alignment hole having a shape corresponding to the diaphragm at a predetermined position is arranged on the insulating base, and the diaphragm is inserted into the alignment hole on the assembly jig, and the insulating base and the diaphragm There is a method in which the insulating base and the diaphragm are joined together while aligning with each other.

  As such an assembly jig, in order to join the insulating base and the diaphragm with a high positional accuracy, a tool having a low possibility of deformation due to heat at the time of joining is required. Things are used.

In addition, the capacitance formed by the first electrode and the second electrode acts on the distance between the first electrode and the second electrode and the region where the first electrode and the second electrode are opposed to each other. When the external pressure is applied to the diaphragm, the position of the central portion of the diaphragm changes greatly, but the change of the outer peripheral portion is extremely small, and the outer periphery of the first electrode and the outer periphery of the second electrode The capacitance formed by the portion is a portion that has a small change amount due to a change in the external pressure and does not contribute much to the change in the capacitance when the external pressure is applied. Therefore, in order to increase the pressure detection sensitivity, the area of one of the first electrode and the second electrode is reduced as a method of increasing the amount of change in capacitance when the diaphragm is bent. A package for a pressure sensing device is conceivable.
JP 2001-356064 A

  However, when the insulating base and the diaphragm are joined, the diaphragm and the assembly jig come into contact with each other and a part of the assembly jig is lost, and carbon scrap is interposed between the insulating base and the diaphragm. There was a possibility. Then, there is a possibility that the first electrode and the second electrode are short-circuited through the carbon waste.

  Further, when carbon scraps are interposed between the insulating base and the diaphragm, or when scraps are interposed between the first electrode and the second electrode, the first electrode and the second electrode Carbon waste can be detected by measuring the insulation resistance between the electrodes. However, there is a problem that it cannot be detected when there is carbon debris on the outer periphery of the electrode having the smaller area. For this reason, carbon scraps move during use as a pressure device and are interposed between the first electrode and the second electrode, which may reduce the accuracy of pressure detection.

  The present invention has been devised in view of the above-mentioned problems of the prior art, and its purpose is to detect carbon debris when carbon debris or the like is present between the insulating base and the diaphragm, It is an object of the present invention to provide a highly reliable pressure sensing device package and pressure sensing device.

  A package for a pressure detection device according to the present invention includes an insulating base having a mounting portion on which a semiconductor element is mounted, a first electrode for forming a capacitance formed on a surface of the insulating base, and the insulating base. A diaphragm disposed at a position facing the surface; a second electrode for forming the capacitance formed on the surface of the diaphragm so as to face the first electrode; and the surface of the insulating substrate; A frame-like spacer formed between the surface of the diaphragm and an inspection electrode provided in a space formed by the insulating base, the diaphragm, and the spacer. Is.

  In the pressure detection device package of the present invention, the inspection electrode is an electrode for detecting a resistance value between the first electrode and the second electrode. .

  The pressure detection device package according to the present invention is characterized in that the inspection electrode is formed around the first electrode on the surface of the insulating substrate.

  The pressure detection device package of the present invention is characterized in that the inspection electrode is formed all around the first electrode.

  In the pressure detection device package of the present invention, the interval between the inspection electrode and the first electrode is such that the first electrode and the second electrode when the capacitance is a maximum value of a rated pressure range. It is characterized by being narrower than the distance from the electrode.

  The pressure detection device package of the present invention is characterized in that the inspection electrode is formed thicker than the first electrode.

  The pressure detection device of the present invention includes the pressure detection device package of the present invention and a semiconductor element that is mounted on the mounting portion of the pressure detection device package and detects pressure applied to the diaphragm. It is what.

  The pressure-sensitive element of the present invention includes an insulating substrate, a first electrode for forming a capacitance formed on the surface of the insulating substrate, a diaphragm disposed at a position facing the surface of the insulating substrate, The capacitance forming second electrode formed on the surface of the diaphragm so as to face the first electrode, and formed between the surface of the insulating base and the surface of the diaphragm. A frame-shaped spacer and an inspection electrode provided in a space formed by the insulating base, the diaphragm, and the spacer are provided.

  The package for a pressure detection device according to the present invention includes an inspection electrode provided in a space formed by an insulating base, a diaphragm, and a spacer, so that carbon mixed in the space in which the electrostatic capacitance is formed. It is possible to detect debris and the like, and to realize a highly reliable pressure detection device.

  That is, the pressure detection device package according to the present invention is provided between the first electrode, the second electrode, and the inspection electrode even when carbon dust or the like is mixed in the space where the capacitance is formed. By evaluating the insulation resistance, it can be detected that carbon scraps or the like are mixed. Therefore, it is possible to realize a pressure detection device that can detect external pressure satisfactorily.

  The pressure detection device package according to the present invention reduces the possibility of deformation when forming a diaphragm, because the inspection electrode is formed around the first electrode on the surface of the insulating substrate. When the external pressure is applied, the diaphragm can be bent uniformly, and a pressure detection device that can detect the external pressure satisfactorily can be realized.

  In the package for a pressure detection device of the present invention, the inspection electrode is formed all around the first electrode, so that the first electrode for forming the capacitance is formed smaller than the second electrode. In the structure, the region where the first electrode is not formed can be filled with the inspection electrode in the insulating base in the space where the electrostatic capacitance is formed, and the capacitance is formed. It becomes possible to improve the detection accuracy of carbon debris and the like in the space.

  The package for the pressure detection device of the present invention is such that the distance between the inspection electrode and the first electrode is narrower than the distance between the first electrode and the second electrode when the maximum value of the rated pressure range is reached. Even when carbon debris or the like is mixed between the inspection electrode and the first electrode, the distance between the first electrode and the second electrode when the external pressure is applied and the diaphragm is bent. If it is larger than that, it can be detected, and a highly reliable pressure detecting device can be realized.

  In the pressure detection device package of the present invention, the inspection electrode is formed thicker than the first electrode, so that it is possible to detect smaller carbon debris and the like at the outer periphery of the diaphragm with a small amount of deflection. The accuracy can be improved. That is, in the pressure detection device package of the present invention, the distance between the inspection electrode and the second electrode on the outer peripheral portion of the diaphragm can be reduced, and smaller carbon debris can be detected.

  The pressure detection device of the present invention includes the pressure detection device package of the present invention and a semiconductor element that is mounted on the mounting portion of the pressure detection device package and detects the pressure applied to the diaphragm, thereby improving reliability. Can be improved.

  The pressure-sensitive element of the present invention includes an inspection electrode provided in a space formed by an insulating base, a diaphragm, and a spacer, so that carbon debris or the like mixed in the space in which the electrostatic capacity is formed is removed. Therefore, it is possible to improve the reliability.

  A package for a pressure detection device according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing a structure of a first example of an embodiment of a package for a pressure detection device according to the present invention.

FIG. 2A is a plan view of an insulating base of the pressure detection device package shown in FIG. 1, and FIG. 2B is a bottom view of the diaphragm facing the insulating base.

  The package for a pressure detection device of the present invention includes an insulating substrate 1, a first electrode 7 for forming a capacitance formed on the insulating substrate 1, a diaphragm 2, and a capacitance formed on the surface of the diaphragm 2. A second electrode 9 for formation and a frame-like spacer 11 formed between the surface of the insulating base 1 and the surface of the diaphragm 2 are provided. In the pressure detection device package of the present invention, the inspection electrode 12 is provided in the space formed by the insulating base 1, the diaphragm 2, and the spacer 11.

  The insulating substrate 1 is a laminated layer made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or a glass-ceramic. Is the body. If the insulating base 1 is made of, for example, an aluminum oxide sintered body, it is manufactured as follows. First, a ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide is mixed with an appropriate organic binder, solvent, plasticizer, and dispersant to form a slurry, which is then used by the doctor blade method. Are formed into a sheet shape to obtain a plurality of ceramic green sheets. Thereafter, a green ceramic molded body for the insulating substrate 1 is obtained by subjecting these ceramic green sheets to appropriate punching, laminating, and cutting. Then, the green ceramic body is fired at a temperature of about 1600 ° C., whereby the insulating substrate 1 is manufactured.

  The insulating base 1 has a concave portion 1a for accommodating the semiconductor element 3 formed on one surface (the lower surface in FIG. 2), and functions as a container for accommodating the semiconductor element 3. And the mounting part 1b in which the semiconductor element 3 is mounted is formed in the center part of the bottom face of this recessed part 1a. The semiconductor element 3 is mounted on the mounting portion 1b, and the semiconductor element 3 is covered with a resin sealing material 4 such as an epoxy resin in the recess 1a, whereby the semiconductor element 3 is sealed.

  In this example, the semiconductor element 3 is sealed by being covered with the resin sealing material 4, but a lid made of metal or ceramic is closed on one surface of the insulating base 1 so as to close the recess 1 a. It may be sealed by bonding.

  A plurality of wiring conductors 5 electrically connected to the respective electrodes of the semiconductor element 3 are led out to the mounting portion 1b. The wiring conductor 5 and the respective electrodes of the semiconductor element 3 are connected to a conductive material such as a solder bump. By bonding through the conductive bonding material 6 made of, each electrode of the semiconductor element 3 and each wiring conductor 5 are electrically connected, and the semiconductor element 3 is fixed to the mounting portion 1b. In the example shown in FIG. 1, the electrode of the semiconductor element 3 and the wiring conductor 5 are connected via solder bumps. However, the electrode of the semiconductor element 3 and the wiring conductor 5 are other than bonding wires or the like. The electrical connection means may be used.

  The wiring conductor 5 functions as a conductive path for electrically connecting each electrode of the semiconductor element 3 to the external electric circuit and the first electrode 7 and the second electrode 9, and a part of the wiring conductor 5 is one side of the insulating substrate 1. The other part is electrically connected to the first electrode 7 and the second electrode 9. The other part is electrically connected to the first electrode 7 and the second electrode 9. Then, after each electrode of the semiconductor element 3 is electrically connected to the wiring conductor 5 via a conductive bonding material 6 such as a solder bump and the semiconductor element 3 is sealed with the resin sealing material 4, A portion led to the outer peripheral portion of one surface (the lower surface in FIG. 1) of the insulating base 1 of the wiring conductor 5 is bonded to the wiring conductor (not shown) of the external electric circuit board via a conductive bonding material such as solder. As a result, the semiconductor element 3 housed therein is electrically connected to the external electric circuit.

  Such a wiring conductor 5 is made of metal powder metallization such as tungsten, molybdenum, copper, silver, etc., and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, dispersant, etc. to metal powder such as tungsten. The paste is applied in a predetermined pattern to a ceramic green sheet for the insulating substrate 1 by using a conventionally known screen printing method, and this is fired together with a green ceramic molded body for the insulating substrate 1 to synthesize the inside of the insulating substrate 1. In addition, a predetermined pattern is formed on the surface. The exposed surface of the wiring conductor 5 has a thickness so as to prevent the wiring conductor 5 from being oxidatively corroded and to improve the bonding between the wiring conductor 5 and the conductive bonding material 6 such as solder. It is preferable that a nickel plating layer having a thickness of about 1 to 10 μm and a gold plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited.

 A first electrode 7 for forming a capacitance is attached to the center of the upper surface of the insulating substrate 1. The first electrode 7 is for forming a capacitance for a pressure sensitive element together with a second electrode 9 described later, and is formed in a substantially circular pattern, for example. Then, one of the wiring conductors 5a is connected to the first electrode 7 so that when the electrode of the semiconductor element 3 is connected to the wiring conductor 5a via a conductive bonding member 6 such as a solder bump. The electrode of the semiconductor element 3 and the first electrode 7 are electrically connected.

  The first electrode 7 is made of metal powder metallization such as tungsten, molybdenum, copper, and silver, and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, and dispersant to metal powder such as tungsten. The metallized paste is printed and applied to a ceramic green sheet for the insulating substrate 1 by employing a conventionally known screen printing method, and is fired together with a green ceramic molded body for the insulating substrate 1 to form a central portion on the upper surface of the insulating substrate 1. A predetermined pattern is formed. Note that a nickel plating layer having a thickness of about 1 to 10 μm is normally applied to the exposed surface of the first electrode 7 in order to prevent the first electrode 7 from being oxidized and corroded. .

  A frame-shaped first bonding metallization layer 8 is attached to the outer peripheral portion of the upper surface of the insulating substrate 1 over the entire periphery, and this first bonding metallization layer 8 has a lower surface to be described later. The second metallization layer 10 for bonding formed on the lower surface of the spacer 11 on the outer periphery of the lower surface of the diaphragm 2 having the second electrode 9 is bonded by bonding through a conductive bonding material such as a silver-copper brazing material. It is worn. One of the wiring conductors 5b is connected to the first metallizing layer 8 for bonding, whereby the electrode of the semiconductor element 3 is electrically connected to the wiring conductor 5b via a conductive bonding member 6 such as a solder bump. Thus, the second bonding metallization layer 10 connected to the first bonding metallization layer 8 and the electrode of the semiconductor element 3 are electrically connected.

  The first bonding metallization layer 8 is made of metal powder metallization such as tungsten, molybdenum, copper, or silver, and is obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, and dispersant to metal powder such as tungsten. The metallized paste is printed and applied to a ceramic green sheet for the insulating substrate 1 using a conventionally known screen printing method, and is fired together with a green ceramic molded body for the insulating substrate 1, whereby the outer peripheral portion of the upper surface of the insulating substrate 1 It is formed in a predetermined frame-like pattern. The exposed surface of the first bonding metallization layer 8 prevents the first bonding metallization layer 8 from being oxidized and corroded and bonds the first bonding metallization layer 8 and the conductive bonding material. In order to be strong, a nickel plating layer having a thickness of about 1 to 10 μm is usually applied.

  The diaphragm 2 is disposed at a position facing the surface of the insulating substrate 1 (in FIG. 1, the upper surface of the insulating substrate 1). The diaphragm 2 is attached so as to form a sealed space with the insulating substrate 1. The diaphragm 2 has a thickness of 0 made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon nitride sintered body, a silicon carbide sintered body, or a glass ceramic. .01-5 mm flat plate and bends toward the insulating substrate 1 according to external pressure.

  The capacitance type pressure detection device is generally used under a pressure of 80 kPa (pressure detection device for low pressure) to 2000 kPa (pressure detection device for high pressure). When the thickness is less than 0.01 mm, the mechanical strength becomes small, and when this is applied to a large external pressure of, for example, about 80 kPa, the mechanical strength is easily broken. Therefore, it tends to be unsuitable as a pressure detection diaphragm. Therefore, the thickness of the diaphragm 2 is preferably in the range of 0.01 to 5 mm.

  If such a diaphragm 2 is made of, for example, an aluminum oxide sintered body, it is manufactured as follows. First, a ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide is mixed with a suitable organic binder, solvent, plasticizer, and dispersant to form a slurry, and this is made using a doctor blade method. A ceramic green sheet is obtained by forming into a sheet. Thereafter, the ceramic green sheet is appropriately punched or cut to obtain a green ceramic molded body for the diaphragm 2. And this diaphragm 2 is manufactured by baking this raw ceramic molded object at the temperature of about 1600 degreeC.

  Further, a frame-like spacer 11 having a height of about 0.01 to 5 mm is provided on the outer peripheral portion of the lower surface of the diaphragm 2, thereby forming a concave portion having a substantially flat bottom surface at the center portion of the lower surface. The concave portion is for forming a sealed space between the insulating base 1 and the second electrode 9 for forming a capacitance is attached to the bottom surface of the concave portion.

  Such a second electrode 9 is made of metal powder metallization such as tungsten, molybdenum, copper, silver, etc., and obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, and dispersant to metal powder such as tungsten. The metallized paste is printed and applied to the ceramic green sheet for diaphragm 2 using a conventionally well-known screen printing method, and this is fired together with the green ceramic molded body for diaphragm 2 so as to be applied to substantially the entire bottom surface of the recess of diaphragm 2. A predetermined pattern is formed. The exposed surface of the second electrode 9 is usually coated with a nickel plating layer having a thickness of about 1 to 10 μm in order to prevent the second electrode 9 from being oxidatively corroded. .

  Further, a frame-like second bonding metallization layer 10 is deposited on the lower surface of the spacer of the diaphragm 2 over the entire circumference, and the second bonding metallization layer 10 is covered with the first bonding metallization layer 10 described above. The metallized layer 8 is attached by bonding through a conductive bonding material such as a silver-copper brazing material.

  Further, the second bonding metallization 10 and the second electrode 9 are electrically connected to each other via the first bonding metallization layer 8 electrically connected to the semiconductor element 3 described above. Thus, the second electrode 9 and the electrode of the semiconductor element 3 are electrically connected.

  At this time, the first electrode 7 and the second electrode 9 are opposed to each other with a space formed between the insulating base 1 and the diaphragm 2 interposed therebetween, and the first electrode 7 is interposed therebetween. In addition, a predetermined capacitance is formed according to the area of the second electrode 9 and the distance between the first electrode 7 and the second electrode 9. When an external pressure is applied to the upper surface of the diaphragm 2, the diaphragm 2 is bent toward the insulating base 1 in accordance with the pressure, and the distance between the first electrode 7 and the second electrode 9 is changed. Since the capacitance between the first electrode 7 and the second electrode 9 changes, it functions as a pressure-sensitive element that senses a change in external pressure as a change in capacitance. Then, the change in electrostatic capacity is transmitted to the semiconductor element 3 accommodated in the recess 1a through the wiring conductors 5a and 5b, and this is processed by the semiconductor element 3 so as to know the magnitude of the external pressure. Can do.

  The second bonding metallization layer 10 is made of metal powder metallization such as tungsten, molybdenum, copper, and silver, and an appropriate organic binder, solvent, plasticizer, and dispersant are added to the metal powder such as tungsten. The metallized paste obtained by mixing is applied to a ceramic green sheet for the spacer of the diaphragm 2 by using a conventionally known screen printing method, and is electrically connected to the second electrode 9 formed on the lower surface of the diaphragm 2. The ceramic green sheet for the diaphragm 2 is laminated so that the spacer 2 and the concave portion are formed in the diaphragm 2, and then fired together with the green ceramic molded body for the diaphragm 2, so that the lower surface of the spacer 11 of the diaphragm 2 and the surface or A predetermined pattern is formed inside. Note that the exposed surface of the second bonding metallization layer 10 prevents the second bonding metallization layer 10 from being oxidatively corroded, and the second bonding metallization layer 10 and the conductive bonding material. In order to strengthen the bonding, a nickel plating layer having a thickness of about 1 to 10 μm is usually applied.

  The first electrode 7 is formed in the central part of the region where the other main surface is exposed in the sealed space, and is formed to be about 50 to 80% of the diameter of this region. It is more preferable. If it is less than 50%, the capacitance formed between the first electrode 7 and the second electrode 9 becomes small, making it difficult to detect the pressure well, and exceeding 80%. In addition, an extra capacitance that does not contribute to the change in capacitance is formed between the first electrode 7 and the second electrode 9, and the rate of change in capacitance is reduced, so the pressure detection sensitivity is low. turn into.

  An inspection electrode 12 is provided in a space formed by the insulating substrate 1, the diaphragm 2 and the spacer 11. The inspection electrode 12 is made of metal powder metallization such as tungsten, molybdenum, copper, silver, etc., and a metallized paste obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, and dispersant to metal powder such as tungsten is screened. A ceramic green sheet for the insulating substrate 1 is printed and applied by a printing method and fired together with a green ceramic molded body for the insulating substrate 1 to form a predetermined pattern on the outer peripheral portion of the upper surface of the insulating substrate 1. The exposed surface of the inspection electrode 12 is coated with a nickel plating layer having a thickness of about 1 to 10 μm in order to prevent the inspection electrode 12 from being oxidized and corroded.

  In the pressure detection device package shown in FIG. 1, the inspection electrode 12 is formed around the first electrode 7 of the insulating substrate 1. Further, the inspection electrode 12 is electrically connected to an inspection pad 13 formed outside the space (in FIG. 1, the side surface of the insulating base 1).

  Note that the inspection electrode 12 is not limited to being formed on the insulating substrate 1, and may be formed on the diaphragm 2. FIG. 3 shows a structure in which the inspection electrode 12 is formed on the diaphragm 2. FIG. 3 is a cross-sectional view showing a structure of a second example of the embodiment of the pressure detecting device package of the present invention. FIG. 4A is a plan view of the insulating base 1 of the pressure detection device package shown in FIG. 3, and FIG. 4B is a bottom view of the diaphragm 2 facing the insulating base 1. In the package for a pressure detection device shown in FIGS. 3 and 4, the inspection electrode 12 is formed all around the second electrode for forming a capacitance.

  Further, the inspection electrode 12 may be formed on the spacer 11 as long as it is in a space where electrostatic capacitance is formed.

  As described above, the pressure detection device package of the present invention is provided with the inspection electrode 12 in the space formed by the insulating base 1, the diaphragm 2 and the spacer 11, so that the space between the insulating base 1 and the diaphragm 2 is provided. It is possible to inspect whether carbon debris or the like is present on the surface. In the pressure detection device package shown in FIGS. 1 and 3, the measurement terminals are applied to the wiring conductor 5 and the inspection pad 13 electrically connected to the first electrode 7 and the second electrode 9, and By evaluating the respective insulation resistances of the electrode 7, the second electrode 9, and the inspection electrode 12, the state in the space where the capacitance is formed can be inspected.

  For example, in the package for the pressure detection device of the present invention shown in FIGS. 1 and 2, when carbon debris or the like is mixed in the space where the capacitance is formed, the first electrode 7 and the second electrode 7 By evaluating the insulation resistance between the electrode 9 and the insulation resistance between the second electrode 9 and the inspection electrode 12, if there is carbon debris on the first electrode 7, The first electrode 7 and the second electrode 9 will be short-circuited, and if there is debris on the outer periphery than the first electrode 7, the second electrode 9 and the inspection electrode 12 will be short-circuited, When the diaphragm 2 bends in the space where the electrostatic capacity is formed, it is reliably detected whether or not carbon debris or the like that causes a short circuit between the first electrode 7 and the second electrode 9 is mixed. Will be able to.

  In the pressure detection device package of the present invention, the inspection electrode 12 is preferably formed around the first electrode 7 on the surface of the insulating substrate 1. With this configuration, the pressure detection device package according to the present invention does not require the formation of the inspection electrode 12 around the second electrode 9, so that deformation is less likely to occur when the diaphragm 2 is formed. When the external pressure is applied to the diaphragm 2, it is possible to realize a pressure detecting device that can easily bend the diaphragm 2 uniformly and detect the external pressure satisfactorily.

  In the pressure detection device package of the present invention, the inspection electrode 12 is preferably formed all around the first electrode 7. The package for a pressure detection device according to the present invention has a structure in which the first electrode 7 for forming a capacitance is formed smaller than the second electrode in such a configuration. A region of the insulating substrate 1 where the inspection electrode 12 is not formed with the first electrode 7 can be filled with the inspection electrode 12, and the detection accuracy of carbon debris and the like in the space where the capacitance is formed is improved. It becomes possible to make it.

  In the pressure detection device package of the present invention, the distance d1 between the inspection electrode 12 and the first electrode 7 is the same as that between the first electrode 7 and the second electrode when the electrostatic capacitance is the maximum value in the rated pressure range. It is preferable that the distance d2 from the electrode 9 is narrower. Here, the rated pressure range refers to a capacitance value range that varies with normal use. FIG. 5 is a cross-sectional view showing an example of a package for a pressure detection device when the electrostatic capacitance reaches the maximum value in the rated pressure range. With such a configuration, the package for a pressure detection device of the present invention has carbon scrap or the like larger than the distance d2 between the first electrode 7 and the second electrode 9 when the capacitance reaches the maximum value in the rated pressure range. However, even if it is mixed in the space in which the electrostatic capacitance is formed, carbon dust or the like can be detected by short-circuiting the first electrode 7 and the inspection electrode 12.

  In the package for the pressure detection device shown in FIG. 5, the distance d2 between the first electrode 7 and the second electrode 9 when the capacitance reaches the maximum value in the rated pressure range is such that the diaphragm 2 is bent. In this case, the distance between the center portions of the respective electrodes where the distance between the first electrode 7 and the second electrode 9 is the narrowest.

  In the pressure detection device package of the present invention in which the inspection electrode 12 is formed around the first electrode 7 on the surface of the insulating substrate 1, the inspection electrode 12 is formed thicker than the first electrode 7. It is preferable.

  With such a configuration, the pressure detection device package of the present invention can detect smaller carbon debris and the like on the outer peripheral portion of the diaphragm with a small amount of deflection, and can improve detection accuracy. That is, in the package for a pressure detection device of the present invention, the distance between the inspection electrode 12 and the second electrode 9 on the outer peripheral portion of the diaphragm 2 can be reduced, and smaller carbon debris can be detected. Become.

  In the above configuration, the distance between the inspection electrode 12 and the second electrode 9 is narrower than the distance between the first electrode 7 and the second electrode 9 when the maximum value of the rated pressure range is reached. Is more preferable. When the inspection electrode 12 is formed on the diaphragm 2, the inspection electrode 12 may be formed thicker than the second electrode 9.

  The pressure device of the present invention is mounted on the pressure detection device package of the present invention and the mounting portion 1b of the insulating base 1, and changes in capacitance between the first electrode 7 and the second electrode 9 are performed. And a semiconductor element 3 for detecting the pressure applied to the diaphragm 2 based on the above. With such a configuration, the pressure device of the present invention can be said to have improved pressure detection accuracy while achieving downsizing.

  The pressure-sensitive element of the present invention includes an insulating base 1, a first electrode 7 for forming a capacitance formed on the surface of the insulating base 1, and a diaphragm 2 disposed at a position facing the surface of the insulating base 1. A capacitance forming second electrode 9 formed on the surface of the diaphragm 2 so as to face the first electrode 7, and formed between the surface of the insulating base 1 and the surface of the diaphragm 2. A frame-shaped spacer 11 and an inspection electrode 12 provided in a space formed by the insulating base 1, the diaphragm 2, and the spacer 11 are provided. With such a configuration, the pressure-sensitive element of the present invention can detect that carbon debris or the like is mixed in the space where the capacitance is formed.

  That is, the pressure-sensitive element of the present invention has an insulation resistance between the first electrode 7 and the second electrode 9 when carbon scraps or the like are mixed in the space where the capacitance is formed. And by evaluating the insulation resistance between the second electrode 9 and the first electrode 7, if there is debris on the first electrode, the first electrode 7 and the second electrode 9 are If the outer periphery of the first electrode 7 is debris, the second electrode 9 and the inspection electrode 12 are short-circuited, and the diaphragm 2 is placed in the space where the capacitance is formed. It is possible to reliably detect whether or not carbon debris or the like that causes a short circuit between the first electrode 7 and the second electrode 9 when bent.

  Further, the first electrode 7 and the second electrode 9 for forming the capacitance are connected to the respective electrodes of the semiconductor element 3 through the wiring conductors 5a and 5b disposed on the surface of the insulating substrate 1 and inside. As a result, the first electrode 7 and the second electrode 9 can be connected to the semiconductor element 3 at a short distance. As a result, unnecessary capacitance generated between the wiring conductors 5a and 5b can be reduced. As a small device, a highly sensitive pressure detecting device can be realized.

  Note that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. For example, in the above-described example, the spacer 11 is formed on the diaphragm 2 side. However, as shown in another example of the pressure detection device package of the present invention in FIG. 6, the spacer 12 is formed on the insulating base 1 side. It does not matter if it is.

It is sectional drawing which shows the structure of the 1st example of embodiment of the package for pressure detection apparatuses of this invention. (A) is a top view of the insulation base | substrate of the package for pressure detection apparatuses shown in FIG. 1, (b) is a bottom view of a diaphragm. It is a top view which shows the structure of the 2nd example of embodiment of the package for pressure detection apparatuses of this invention. (A) is a top view of the insulation base | substrate of the package for pressure detection apparatuses shown in FIG. 1, (b) is a bottom view of a diaphragm. It is sectional drawing which shows the state which the diaphragm of the package for pressure detection apparatuses shown in FIG. 1 bent. It is sectional drawing which shows the structure of the 3rd example of embodiment of the package for pressure detection apparatuses of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Insulation base | substrate 1a ......... Recessed part 1b ......... Mounting part 2 ...... Diaphragm 3 ...... Semiconductor Element 4... Resin sealing material 5, 5 a, 5 b ..Wiring conductor 6... Conductive bonding material 7. 8... First metallized layer 9... Second electrode 10... Second metallized layer 11. .... Inspection electrodes

Claims (8)

An insulating base having a mounting portion on which a semiconductor element is mounted, a first electrode for forming a capacitance formed on the surface of the insulating base, and a diaphragm disposed at a position facing the surface of the insulating base A capacitance forming second electrode formed on the surface of the diaphragm so as to face the first electrode, and formed between the surface of the insulating base and the surface of the diaphragm. A pressure detection device package comprising: a frame-shaped spacer formed; and an inspection electrode provided in a space formed by the insulating base, the diaphragm, and the spacer. The pressure detection device package according to claim 1, wherein the inspection electrode is an electrode for detecting a resistance value between the first electrode and the second electrode. The pressure detection device package according to claim 1, wherein the inspection electrode is formed around the first electrode on the surface of the insulating base. The pressure detection device package according to claim 3, wherein the inspection electrode is formed all around the first electrode. The interval between the inspection electrode and the first electrode is narrower than the interval between the first electrode and the second electrode when the capacitance reaches the maximum value in the rated pressure range. The package for a pressure detection device according to claim 3 or 4. The pressure detection device package according to claim 3, wherein the inspection electrode is formed thicker than the first electrode. The pressure detection device package according to claim 1, and a semiconductor element mounted on the mounting portion of the pressure detection device package for detecting pressure applied to the diaphragm. A pressure detection device characterized by. An insulating base, a first electrode for forming a capacitance formed on the surface of the insulating base, a diaphragm disposed at a position facing the surface of the insulating base, and the first electrode on the surface of the diaphragm. A second electrode for forming a capacitance formed so as to face the electrode, a frame-like spacer formed between the surface of the insulating base and the surface of the diaphragm, and the insulation A pressure-sensitive element comprising: a base, an inspection electrode provided in a space formed by the diaphragm and the spacer.

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