JP2006167908A - 重複する段差溝構造を有するcmpパッド - Google Patents
重複する段差溝構造を有するcmpパッド Download PDFInfo
- Publication number
- JP2006167908A JP2006167908A JP2005360481A JP2005360481A JP2006167908A JP 2006167908 A JP2006167908 A JP 2006167908A JP 2005360481 A JP2005360481 A JP 2005360481A JP 2005360481 A JP2005360481 A JP 2005360481A JP 2006167908 A JP2006167908 A JP 2006167908A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- track
- grooves
- polishing pad
- annular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims abstract description 203
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000002002 slurry Substances 0.000 abstract description 20
- 235000012431 wafers Nutrition 0.000 description 48
- 239000000126 substance Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 241000128823 Dasyatis say Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】研磨パッド104は、環状研磨トラック152と、研磨パッドの回転中心128を中心に周方向に反復される溝112の複数のグループ160とを有する。各グループ中の複数の溝は、環状研磨トラック内に複数の重複する段を提供するよう、オフセットし、重複する手法で軌道に沿って設けられている。グループは、互いに離間した関係又は入れ子の関係で設けることができる。
【選択図】図1
Description
Claims (10)
- a)研磨媒体の存在で磁性、光学又は半導体基材の少なくとも一つの表面を研磨するように構成され、回転軸及び回転軸と同心的な環状研磨トラックを含む研磨層、ならびに
b)研磨層中に形成され、環状研磨トラックを通過して延びる軌道に沿って複数のグループとして設けられた複数の溝
を含む研磨パッドであって、各グループ内の複数の溝が、環状研磨トラック内に重複する段差パターンを形成するものである研磨パッド。 - 複数のグループが回転軸周りに周方向に互いに離間している、請求項1記載の研磨パッド。
- 複数のグループが回転軸周りに周方向に互いに入れ子状態である、請求項1記載の研磨パッド。
- 複数のグループそれぞれが少なくとも3本の溝を含む、請求項1記載の研磨パッド。
- 複数のグループそれぞれの軌道が円弧状である、請求項1記載の研磨パッド。
- 研磨パッドが設計回転方向を有し、複数のグループそれぞれの軌道が設計回転方向に湾曲している、請求項5記載の研磨パッド。
- a)研磨媒体の存在で磁性、光学又は半導体基材の少なくとも一つの表面を研磨するように構成され、回転軸及び回転軸と同心的な環状研磨トラックを含む研磨層、ならびに
b)研磨層中に形成され、環状研磨トラックを通過して延びる軌道に沿って複数のグループとして設けられた複数の溝
を含む研磨パッドであって、各グループ内の複数の溝が、環状研磨トラック内に少なくとも1つの重複する段差を形成するものである研磨パッド - 各グループ内の複数の溝が、環状研磨トラック内に少なくとも2つの重複する段差を形成する、請求項7記載の研磨パッド。
- パッドが周縁をさらに含み、環状研磨トラックが円形の内側境界線を含み、研磨層が、環状研磨トラックの円形の内側境界線によって画定される中央領域と、環状研磨トラックとパッドの周縁との間に位置する周辺領域とをさらに含み、複数のグループそれぞれが、中央領域及び環状研磨トラックにのみ存在する内側溝と、環状研磨トラック及び周辺領域にのみ存在する外側溝とを含む、請求項7記載の研磨パッド。
- 環状研磨トラックが幅を有し、複数の溝の各溝が、環状研磨トラックの幅よりも短い長さを有する、請求項7記載の研磨パッド。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/012,396 | 2004-12-14 | ||
US11/012,396 US7059949B1 (en) | 2004-12-14 | 2004-12-14 | CMP pad having an overlapping stepped groove arrangement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006167908A true JP2006167908A (ja) | 2006-06-29 |
JP4949677B2 JP4949677B2 (ja) | 2012-06-13 |
Family
ID=36576370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005360481A Active JP4949677B2 (ja) | 2004-12-14 | 2005-12-14 | 重複する段差溝構造を有するcmpパッド |
Country Status (7)
Country | Link |
---|---|
US (1) | US7059949B1 (ja) |
JP (1) | JP4949677B2 (ja) |
KR (1) | KR101200424B1 (ja) |
CN (1) | CN100419965C (ja) |
DE (1) | DE102005059545A1 (ja) |
FR (1) | FR2879953B1 (ja) |
TW (1) | TWI372092B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007024954A1 (de) | 2007-05-30 | 2008-12-04 | Siltronic Ag | Poliertuch für DSP und CMP |
TWI426980B (zh) * | 2007-01-31 | 2014-02-21 | 羅門哈斯電子材料Cmp控股公司 | 具有溝槽以減少漿液之消耗之研磨墊及其製造方法 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7125318B2 (en) * | 2003-11-13 | 2006-10-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad having a groove arrangement for reducing slurry consumption |
US7520798B2 (en) * | 2007-01-31 | 2009-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to reduce slurry consumption |
US7311590B1 (en) | 2007-01-31 | 2007-12-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to retain slurry on the pad texture |
US9180570B2 (en) | 2008-03-14 | 2015-11-10 | Nexplanar Corporation | Grooved CMP pad |
US8062103B2 (en) * | 2008-12-23 | 2011-11-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate groove pattern |
US8057282B2 (en) * | 2008-12-23 | 2011-11-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate polishing method |
CN101817160A (zh) * | 2010-04-13 | 2010-09-01 | 王敬 | 硅锭的抛光方法、系统及抛光板 |
TWI599447B (zh) | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | 具有偏移同心溝槽圖樣之邊緣排除區的cmp拋光墊 |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
CN113579992A (zh) | 2014-10-17 | 2021-11-02 | 应用材料公司 | 使用加成制造工艺的具复合材料特性的cmp衬垫建构 |
WO2017074773A1 (en) | 2015-10-30 | 2017-05-04 | Applied Materials, Inc. | An apparatus and method of forming a polishing article that has a desired zeta potential |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
KR20210042171A (ko) | 2018-09-04 | 2021-04-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 진보한 폴리싱 패드들을 위한 제형들 |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN115070606B (zh) * | 2022-06-30 | 2023-11-14 | 西安奕斯伟材料科技股份有限公司 | 一种用于对硅片进行抛光的抛光垫和抛光设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5990012A (en) * | 1998-01-27 | 1999-11-23 | Micron Technology, Inc. | Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads |
JP2000042901A (ja) * | 1998-07-29 | 2000-02-15 | Toshiba Ceramics Co Ltd | 研磨布およびその製造方法 |
KR20010060630A (ko) * | 1999-12-27 | 2001-07-07 | 윤종용 | 연마잔류물의 용이한 배출을 위한 구조를 갖는 화학기계적연마 패드 |
KR20020022198A (ko) * | 2000-09-19 | 2002-03-27 | 윤종용 | 표면에 비 선형 트랙이 형성된 연마 패드를 구비하는화학적 기계적 연마 장치 |
JP2005183708A (ja) * | 2003-12-19 | 2005-07-07 | Toyo Tire & Rubber Co Ltd | Cmp用研磨パッド、及びそれを用いた研磨方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US5177908A (en) | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
US5650039A (en) | 1994-03-02 | 1997-07-22 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved slurry distribution |
US5645469A (en) | 1996-09-06 | 1997-07-08 | Advanced Micro Devices, Inc. | Polishing pad with radially extending tapered channels |
JPH11156699A (ja) * | 1997-11-25 | 1999-06-15 | Speedfam Co Ltd | 平面研磨用パッド |
GB2345255B (en) | 1998-12-29 | 2000-12-27 | United Microelectronics Corp | Chemical-Mechanical Polishing Pad |
US20020068516A1 (en) | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
US6241596B1 (en) | 2000-01-14 | 2001-06-05 | Applied Materials, Inc. | Method and apparatus for chemical mechanical polishing using a patterned pad |
JP2002200555A (ja) * | 2000-12-28 | 2002-07-16 | Ebara Corp | 研磨工具および該研磨工具を具備したポリッシング装置 |
US6783436B1 (en) * | 2003-04-29 | 2004-08-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with optimized grooves and method of forming same |
US6843711B1 (en) | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing pad having a process-dependent groove configuration |
-
2004
- 2004-12-14 US US11/012,396 patent/US7059949B1/en active Active
-
2005
- 2005-11-29 KR KR1020050114711A patent/KR101200424B1/ko active IP Right Grant
- 2005-12-06 TW TW094142891A patent/TWI372092B/zh active
- 2005-12-13 DE DE102005059545A patent/DE102005059545A1/de not_active Ceased
- 2005-12-13 CN CNB200510131652XA patent/CN100419965C/zh not_active Expired - Fee Related
- 2005-12-14 JP JP2005360481A patent/JP4949677B2/ja active Active
- 2005-12-14 FR FR0512655A patent/FR2879953B1/fr not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5990012A (en) * | 1998-01-27 | 1999-11-23 | Micron Technology, Inc. | Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads |
JP2000042901A (ja) * | 1998-07-29 | 2000-02-15 | Toshiba Ceramics Co Ltd | 研磨布およびその製造方法 |
KR20010060630A (ko) * | 1999-12-27 | 2001-07-07 | 윤종용 | 연마잔류물의 용이한 배출을 위한 구조를 갖는 화학기계적연마 패드 |
KR20020022198A (ko) * | 2000-09-19 | 2002-03-27 | 윤종용 | 표면에 비 선형 트랙이 형성된 연마 패드를 구비하는화학적 기계적 연마 장치 |
JP2005183708A (ja) * | 2003-12-19 | 2005-07-07 | Toyo Tire & Rubber Co Ltd | Cmp用研磨パッド、及びそれを用いた研磨方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI426980B (zh) * | 2007-01-31 | 2014-02-21 | 羅門哈斯電子材料Cmp控股公司 | 具有溝槽以減少漿液之消耗之研磨墊及其製造方法 |
DE102007024954A1 (de) | 2007-05-30 | 2008-12-04 | Siltronic Ag | Poliertuch für DSP und CMP |
Also Published As
Publication number | Publication date |
---|---|
TW200626294A (en) | 2006-08-01 |
US20060128290A1 (en) | 2006-06-15 |
JP4949677B2 (ja) | 2012-06-13 |
KR20060067140A (ko) | 2006-06-19 |
DE102005059545A1 (de) | 2006-07-13 |
CN100419965C (zh) | 2008-09-17 |
CN1790624A (zh) | 2006-06-21 |
FR2879953A1 (fr) | 2006-06-30 |
KR101200424B1 (ko) | 2012-11-12 |
FR2879953B1 (fr) | 2009-02-13 |
US7059949B1 (en) | 2006-06-13 |
TWI372092B (en) | 2012-09-11 |
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