JP2006151704A - 炭化珪素質多孔体及びその製造方法 - Google Patents
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 257
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 247
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 170
- 239000010703 silicon Substances 0.000 claims abstract description 149
- 239000011148 porous material Substances 0.000 claims abstract description 135
- 239000011230 binding agent Substances 0.000 claims abstract description 107
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 104
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 85
- 239000002245 particle Substances 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 50
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 40
- 229910052760 oxygen Inorganic materials 0.000 claims description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- 238000010304 firing Methods 0.000 claims description 25
- 229920001296 polysiloxane Polymers 0.000 claims description 24
- -1 polysiloxane Polymers 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 16
- 239000013081 microcrystal Substances 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 8
- 238000001354 calcination Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 229920003257 polycarbosilane Polymers 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 142
- 238000007254 oxidation reaction Methods 0.000 abstract description 18
- 239000011856 silicon-based particle Substances 0.000 abstract description 12
- 230000003647 oxidation Effects 0.000 abstract description 10
- 239000012298 atmosphere Substances 0.000 description 40
- 239000010408 film Substances 0.000 description 38
- 238000000576 coating method Methods 0.000 description 33
- 239000007789 gas Substances 0.000 description 32
- 239000011248 coating agent Substances 0.000 description 31
- 238000012360 testing method Methods 0.000 description 31
- 230000000704 physical effect Effects 0.000 description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 230000008859 change Effects 0.000 description 21
- 238000004453 electron probe microanalysis Methods 0.000 description 19
- 238000000921 elemental analysis Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 238000010894 electron beam technology Methods 0.000 description 15
- 238000005121 nitriding Methods 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 239000001307 helium Substances 0.000 description 12
- 229910052734 helium Inorganic materials 0.000 description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000003054 catalyst Substances 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000003944 tolyl group Chemical group 0.000 description 6
- 238000005238 degreasing Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000004927 clay Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 239000011863 silicon-based powder Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229910021426 porous silicon Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920000609 methyl cellulose Polymers 0.000 description 2
- 239000001923 methylcellulose Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000008107 starch Substances 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910021386 carbon form Chemical group 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Filtering Materials (AREA)
- Exhaust Gas After Treatment (AREA)
- Processes For Solid Components From Exhaust (AREA)
- Porous Artificial Stone Or Porous Ceramic Products (AREA)
- Catalysts (AREA)
- Exhaust Gas Treatment By Means Of Catalyst (AREA)
Abstract
【解決手段】炭化珪素質多孔体10は、骨材としての炭化珪素粒子1と、その炭化珪素粒子1どうしを結合する結合材としての金属珪素粒子2と、を含み、炭化珪素粒子1の間に細孔4が形成されてなるものであり、結合材である金属珪素粒子2の表面の少なくとも一部が、珪素と炭素とを含む相3で覆われている。
【選択図】図1
Description
Si+1/2O2→SiO↑ … (1)
Si3N4+3/2O2→3SiO↑+2N2↑ … (2)
Claims (16)
- 骨材としての炭化珪素粒子と、その炭化珪素粒子どうしを結合する結合材と、を含み、前記結合材の表面の少なくとも一部が、珪素と炭素とを含む相で覆われている炭化珪素質多孔体。
- 更に、前記炭化珪素粒子の表面の少なくとも一部が、珪素と炭素とを含む相で覆われている請求項1に記載の炭化珪素質多孔体。
- 前記結合材が、金属珪素及び窒化珪素のうちの何れかである請求項1又は2に記載の炭化珪素質多孔体。
- 前記珪素と炭素とを含む相が、更に酸素を含む請求項1〜3の何れか一項に記載の炭化珪素質多孔体。
- 前記珪素と炭素とを含む相が、ガラス相及び/又は微結晶である請求項1〜4の何れか一項に記載の炭化珪素質多孔体。
- 略柱状を呈し、軸方向に、隔壁で仕切られた多数の流通孔を有するハニカム構造体であって、請求項1〜5の何れか一項に記載の炭化珪素質多孔体で構成されるハニカム構造体。
- 請求項1〜6の何れか一項に記載の炭化珪素質多孔体を製造する方法であって、
骨材となる炭化珪素粒子に、その炭化珪素粒子どうしを結合する結合材となる所定原料と、有機バインダと、を加えて混合した後に成形し、所定の形状の成形体を得る工程と、
前記成形体を仮焼して前記有機バインダを除去し、仮焼体を得る工程と、
前記仮焼体を焼成し、焼成体を得る工程と、
珪素と炭素とを含む溶液を用いて、得られた前記焼成体の中の前記結合材の表面の少なくとも一部を、珪素と炭素とを含む相で覆う工程と、
を有する炭化珪素質多孔体の製造方法。 - 前記焼成体の中の結合材の表面の少なくとも一部を珪素と炭素とを含む相で覆う工程の後に、更に熱処理する工程を有する請求項7に記載の炭化珪素質多孔体の製造方法。
- 請求項1〜6の何れか一項に記載の炭化珪素質多孔体を製造する方法であって、
骨材となる炭化珪素粒子に、その炭化珪素粒子どうしを結合する結合材となる所定原料と、有機バインダと、を加えて混合した後に成形し、所定の形状の成形体を得る工程と、
前記成形体を仮焼して前記有機バインダを除去し、仮焼体を得る工程と、
珪素と炭素とを含む溶液を用いて、得られた前記仮焼体の中の前記結合材の表面の少なくとも一部を、珪素と炭素とを含む相で覆う工程と、
を有する炭化珪素質多孔体の製造方法。 - 前記仮焼体の中の結合材の表面の少なくとも一部を珪素と炭素とを含む相で覆う工程の後に、更に熱処理する工程を有する請求項9に記載の炭化珪素質多孔体の製造方法。
- 前記熱処理を、60〜2400℃の温度範囲で実施する請求項8又は10に記載の炭化珪素質多孔体の製造方法。
- 前記結合材となる所定原料が、金属珪素である請求項7〜11の何れか一項に記載の炭化珪素質多孔体の製造方法。
- 前記珪素と炭素とを含む溶液が、更に酸素を含む請求項7〜12の何れか一項に記載の炭化珪素質多孔体の製造方法。
- 前記珪素と炭素とを含む溶液が、有機ポリシロキサン溶液である請求項7〜13の何れか一項に記載の炭化珪素質多孔体の製造方法。
- 前記有機ポリシロキサン溶液が、フェニル基を含む請求項14に記載の炭化珪素質多孔体の製造方法。
- 前記珪素と炭素とを含む溶液が、アリルハイドリドポリカルボシラン(AHPCS)溶液である請求項7〜12の何れか一項に記載の炭化珪素質多孔体の製造方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009143762A (ja) * | 2007-12-13 | 2009-07-02 | Ngk Insulators Ltd | 炭化珪素質多孔体 |
JP2009269763A (ja) * | 2008-04-30 | 2009-11-19 | Tokyo Yogyo Co Ltd | ハニカム構造体 |
US20110135558A1 (en) * | 2008-05-21 | 2011-06-09 | Ding Ma | Process for producing silicon carbide |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102746028A (zh) * | 2012-05-26 | 2012-10-24 | 苏州宏久航空防热材料科技有限公司 | 一种氧化物颗粒镶嵌的碳化硅涂层及其制备方法 |
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JPS5428309A (en) * | 1977-08-03 | 1979-03-02 | Tokushiyu Muki Zairiyou Kenkiy | Method of making heattresistant ceramic sintered body |
JPH04238664A (ja) * | 1990-12-29 | 1992-08-26 | Isuzu Motors Ltd | リエントラント型ピストン及びその製造方法 |
JPH07267620A (ja) * | 1994-02-22 | 1995-10-17 | Solvay Deutsche Gmbh | 酸素不含または酸素含量の少ない炭化珪素成形体の製造方法 |
JPH0826848A (ja) * | 1994-07-21 | 1996-01-30 | Tokai Carbon Co Ltd | 多孔質SiC成形体の製造方法 |
JP2866435B2 (ja) * | 1990-03-23 | 1999-03-08 | 信越化学工業株式会社 | 炭化けい素被覆膜の製造方法 |
JP2002154882A (ja) * | 2000-11-17 | 2002-05-28 | Ngk Insulators Ltd | 炭化珪素質多孔体及びその製造方法 |
JP2003501518A (ja) * | 1999-06-07 | 2003-01-14 | アライドシグナル インコーポレイテッド | ポリカルボシランから生じた低誘電率ポリオルガノシリコンコーティング |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5428309A (en) * | 1977-08-03 | 1979-03-02 | Tokushiyu Muki Zairiyou Kenkiy | Method of making heattresistant ceramic sintered body |
JP2866435B2 (ja) * | 1990-03-23 | 1999-03-08 | 信越化学工業株式会社 | 炭化けい素被覆膜の製造方法 |
JPH04238664A (ja) * | 1990-12-29 | 1992-08-26 | Isuzu Motors Ltd | リエントラント型ピストン及びその製造方法 |
JPH07267620A (ja) * | 1994-02-22 | 1995-10-17 | Solvay Deutsche Gmbh | 酸素不含または酸素含量の少ない炭化珪素成形体の製造方法 |
JPH0826848A (ja) * | 1994-07-21 | 1996-01-30 | Tokai Carbon Co Ltd | 多孔質SiC成形体の製造方法 |
JP2003501518A (ja) * | 1999-06-07 | 2003-01-14 | アライドシグナル インコーポレイテッド | ポリカルボシランから生じた低誘電率ポリオルガノシリコンコーティング |
JP2002154882A (ja) * | 2000-11-17 | 2002-05-28 | Ngk Insulators Ltd | 炭化珪素質多孔体及びその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009143762A (ja) * | 2007-12-13 | 2009-07-02 | Ngk Insulators Ltd | 炭化珪素質多孔体 |
US9045371B2 (en) | 2007-12-13 | 2015-06-02 | Ngk Insulators, Ltd. | Silicon carbide-based porous body |
JP2009269763A (ja) * | 2008-04-30 | 2009-11-19 | Tokyo Yogyo Co Ltd | ハニカム構造体 |
US20110135558A1 (en) * | 2008-05-21 | 2011-06-09 | Ding Ma | Process for producing silicon carbide |
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