JP2006148086A - レーザ照射方法、レーザ照射装置、および半導体装置の作製方法 - Google Patents

レーザ照射方法、レーザ照射装置、および半導体装置の作製方法 Download PDF

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Publication number
JP2006148086A
JP2006148086A JP2005305339A JP2005305339A JP2006148086A JP 2006148086 A JP2006148086 A JP 2006148086A JP 2005305339 A JP2005305339 A JP 2005305339A JP 2005305339 A JP2005305339 A JP 2005305339A JP 2006148086 A JP2006148086 A JP 2006148086A
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Japan
Prior art keywords
laser
laser beam
film
semiconductor
insulating film
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Japanese (ja)
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JP2006148086A5 (enExample
Inventor
Koichiro Tanaka
幸一郎 田中
Yoshiaki Yamamoto
良明 山本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2006148086A5 publication Critical patent/JP2006148086A5/ja
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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2005305339A 2004-10-20 2005-10-20 レーザ照射方法、レーザ照射装置、および半導体装置の作製方法 Withdrawn JP2006148086A (ja)

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JP2005305339A JP2006148086A (ja) 2004-10-20 2005-10-20 レーザ照射方法、レーザ照射装置、および半導体装置の作製方法

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JP2006148086A5 JP2006148086A5 (enExample) 2008-09-18

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270780A (ja) * 2007-03-23 2008-11-06 Semiconductor Energy Lab Co Ltd 結晶性半導体膜の作製方法及び薄膜トランジスタの作製方法
WO2008128080A3 (en) * 2007-04-13 2009-02-12 Saint Gobain Ceramics Electrostatic dissipative stage for use in forming lcd products
JP2009088497A (ja) * 2007-09-14 2009-04-23 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP2011528504A (ja) * 2008-07-16 2011-11-17 サイオニクス、インク． パルス状レーザ加工から半導体を保護する薄い犠牲マスキング膜
US8853062B2 (en) 2011-10-18 2014-10-07 Samsung Display Co., Ltd. Laser crystallization apparatus and laser crystallization method using the apparatus
DE102014213421A1 (de) 2013-07-12 2015-01-15 Aisin Seiki Kabushiki Kaisha Laserbearbeitungsvorrichtung und Laserbearbeitungsverfahren
CN110890263A (zh) * 2018-09-10 2020-03-17 三星电子株式会社 干法清洗设备和干法清洗方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150203A (ja) * 1996-11-20 1998-06-02 Sony Corp 薄膜半導体装置の製造方法
JPH1126389A (ja) * 1997-06-30 1999-01-29 Sumitomo Electric Ind Ltd ダイヤモンドの改質方法
JP2001338894A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 固体試料のアニール方法および半導体不純物ドーピング層形成方法
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置
JP2002176008A (ja) * 2000-12-08 2002-06-21 Mitsubishi Electric Corp 照射レーザビームの測定方法とその測定装置
JP2002299629A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd ポリシリコン薄膜半導体およびポリシリコン薄膜半導体の製造方法
JP2002329911A (ja) * 2001-04-27 2002-11-15 Komatsu Ltd レーザ装置、増幅器、及び紫外線レーザ装置
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
JP2004064064A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd レーザアニール装置
JP2004158627A (ja) * 2002-11-06 2004-06-03 Renesas Technology Corp 半導体装置の製造方法
JP2004165530A (ja) * 2002-11-15 2004-06-10 Sangaku Renkei Kiko Kyushu:Kk レーザー装置及び電気光学分散を用いた同調方法
JP2004221560A (ja) * 2002-12-25 2004-08-05 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
WO2006013846A1 (ja) * 2004-08-06 2006-02-09 Sumitomo Electric Industries, Ltd. ｐ型半導体領域を形成する方法および半導体素子

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150203A (ja) * 1996-11-20 1998-06-02 Sony Corp 薄膜半導体装置の製造方法
JPH1126389A (ja) * 1997-06-30 1999-01-29 Sumitomo Electric Ind Ltd ダイヤモンドの改質方法
JP2001338894A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 固体試料のアニール方法および半導体不純物ドーピング層形成方法
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置
JP2002176008A (ja) * 2000-12-08 2002-06-21 Mitsubishi Electric Corp 照射レーザビームの測定方法とその測定装置
JP2002299629A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd ポリシリコン薄膜半導体およびポリシリコン薄膜半導体の製造方法
JP2002329911A (ja) * 2001-04-27 2002-11-15 Komatsu Ltd レーザ装置、増幅器、及び紫外線レーザ装置
JP2004064064A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd レーザアニール装置
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
JP2004158627A (ja) * 2002-11-06 2004-06-03 Renesas Technology Corp 半導体装置の製造方法
JP2004165530A (ja) * 2002-11-15 2004-06-10 Sangaku Renkei Kiko Kyushu:Kk レーザー装置及び電気光学分散を用いた同調方法
JP2004221560A (ja) * 2002-12-25 2004-08-05 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
WO2006013846A1 (ja) * 2004-08-06 2006-02-09 Sumitomo Electric Industries, Ltd. ｐ型半導体領域を形成する方法および半導体素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN6011044726; ＭｃＭｏｒｒｏｗ，　Ｄ，　ｅｔ　ａｌ．: '"Ｓｕｂｂａｎｄｇａｐ　ｌａｓｅｒ-ｉｎｄｕｃｅｄ　ｓｉｎｇｌｅ　ｅｖｅｎｔ　ｅｆｆｅｃｔｓ：　Ｃａｒｒｉｅｒ　ｇｅｎｅｒａｔｉｏｎ　ｖｉａ　ｔｗｏ-ｐｈｏｔｏｎ　ａｂｓｏｒｐｔｉｏｎ"' ＩＥＥＥ　ＴＲＡＮＳＡＣＴＩＯＮＳ　ＯＮ　ＮＵＣＬＥＡＲ　ＳＣＩＥＮＣＥ Ｖｏｌ．　４９，　Ｎｏ．　６, 200212, ｐｐ．　３００２-３００８ *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270780A (ja) * 2007-03-23 2008-11-06 Semiconductor Energy Lab Co Ltd 結晶性半導体膜の作製方法及び薄膜トランジスタの作製方法
KR101438379B1 (ko) 2007-03-23 2014-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 결정성 반도체막의 제조방법 및 박막트랜지스터의 제조방법
WO2008128080A3 (en) * 2007-04-13 2009-02-12 Saint Gobain Ceramics Electrostatic dissipative stage for use in forming lcd products
JP2009088497A (ja) * 2007-09-14 2009-04-23 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP2011528504A (ja) * 2008-07-16 2011-11-17 サイオニクス、インク． パルス状レーザ加工から半導体を保護する薄い犠牲マスキング膜
US8853062B2 (en) 2011-10-18 2014-10-07 Samsung Display Co., Ltd. Laser crystallization apparatus and laser crystallization method using the apparatus
DE102014213421A1 (de) 2013-07-12 2015-01-15 Aisin Seiki Kabushiki Kaisha Laserbearbeitungsvorrichtung und Laserbearbeitungsverfahren
CN110890263A (zh) * 2018-09-10 2020-03-17 三星电子株式会社 干法清洗设备和干法清洗方法

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