JP2006128100A5 - - Google Patents

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Publication number
JP2006128100A5
JP2006128100A5 JP2005287181A JP2005287181A JP2006128100A5 JP 2006128100 A5 JP2006128100 A5 JP 2006128100A5 JP 2005287181 A JP2005287181 A JP 2005287181A JP 2005287181 A JP2005287181 A JP 2005287181A JP 2006128100 A5 JP2006128100 A5 JP 2006128100A5
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JP
Japan
Prior art keywords
layer
light
electrode
emitting element
metal
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Application number
JP2005287181A
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English (en)
Japanese (ja)
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JP2006128100A (ja
JP4777032B2 (ja
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Priority to JP2005287181A priority Critical patent/JP4777032B2/ja
Priority claimed from JP2005287181A external-priority patent/JP4777032B2/ja
Publication of JP2006128100A publication Critical patent/JP2006128100A/ja
Publication of JP2006128100A5 publication Critical patent/JP2006128100A5/ja
Application granted granted Critical
Publication of JP4777032B2 publication Critical patent/JP4777032B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005287181A 2004-09-30 2005-09-30 発光素子 Expired - Fee Related JP4777032B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005287181A JP4777032B2 (ja) 2004-09-30 2005-09-30 発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004285777 2004-09-30
JP2004285777 2004-09-30
JP2005287181A JP4777032B2 (ja) 2004-09-30 2005-09-30 発光素子

Publications (3)

Publication Number Publication Date
JP2006128100A JP2006128100A (ja) 2006-05-18
JP2006128100A5 true JP2006128100A5 (enExample) 2008-11-27
JP4777032B2 JP4777032B2 (ja) 2011-09-21

Family

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Family Applications (1)

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JP2005287181A Expired - Fee Related JP4777032B2 (ja) 2004-09-30 2005-09-30 発光素子

Country Status (5)

Country Link
US (4) US7964864B2 (enExample)
JP (1) JP4777032B2 (enExample)
KR (2) KR101233131B1 (enExample)
CN (1) CN101032040B (enExample)
WO (1) WO2006035973A1 (enExample)

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EP2365556B1 (en) 2010-03-08 2014-07-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
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TWI506121B (zh) 2010-03-31 2015-11-01 Semiconductor Energy Lab 發光元件，發光裝置，電子裝置以及照明裝置
JP5801579B2 (ja) 2010-03-31 2015-10-28 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、及び照明装置
WO2011162105A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display, and electronic device
US8552440B2 (en) * 2010-12-24 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Lighting device
KR101872925B1 (ko) * 2010-12-24 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 조명 장치
KR20130108026A (ko) * 2012-03-23 2013-10-02 주식회사 엘지화학 유기발광소자
TWI577238B (zh) * 2012-04-25 2017-04-01 群康科技(深圳)有限公司 有機發光二極體及包含其之顯示裝置
KR101978304B1 (ko) * 2012-11-15 2019-05-14 삼성전자주식회사 자체발광 디스플레이 패널 및 이를 가지는 디스플레이장치
US20160043142A1 (en) * 2013-03-21 2016-02-11 Industry-University Cooperation Foundation Hanyang University Two-terminal switching element having bidirectional switching characteristic, resistive memory cross-point array including same, and method for manufacturing two-terminal switching element and cross-point resistive memory array
CN103840047B (zh) * 2014-02-20 2016-07-06 浙江大学 一种以胶体NiO纳米晶薄膜为空穴传输层的光电器件及其制备方法
CN105161626B (zh) * 2015-06-23 2017-05-24 广东茵坦斯能源科技有限公司 一种掺杂的纳米锡化物有机发光器件
CN106098956A (zh) * 2016-07-14 2016-11-09 Tcl集团股份有限公司 一种qled及其制备方法
CN115277894B (zh) * 2022-06-21 2024-11-22 维沃移动通信有限公司 电子设备、插入检测方法及可读存储介质

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EP1624502B1 (en) 2004-08-04 2015-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, and electronic appliance
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