JP2006114732A - 半導体装置及びその製造方法、並びに半導体モジュール - Google Patents

半導体装置及びその製造方法、並びに半導体モジュール Download PDF

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Publication number
JP2006114732A
JP2006114732A JP2004301225A JP2004301225A JP2006114732A JP 2006114732 A JP2006114732 A JP 2006114732A JP 2004301225 A JP2004301225 A JP 2004301225A JP 2004301225 A JP2004301225 A JP 2004301225A JP 2006114732 A JP2006114732 A JP 2006114732A
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Japan
Prior art keywords
semiconductor
semiconductor substrate
conductor layer
substrate
region
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Pending
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JP2004301225A
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English (en)
Japanese (ja)
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JP2006114732A5 (https=
Inventor
Kenichi Tanaka
健一 田中
Hidetoshi Matsumoto
秀俊 松本
Isao Obe
功 大部
Kazuhiro Mochizuki
和浩 望月
Tomonori Tagami
知紀 田上
Chisaki Takubo
千咲紀 田窪
Hiroyuki Uchiyama
博幸 内山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004301225A priority Critical patent/JP2006114732A/ja
Priority to US11/247,234 priority patent/US7547929B2/en
Publication of JP2006114732A publication Critical patent/JP2006114732A/ja
Publication of JP2006114732A5 publication Critical patent/JP2006114732A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004301225A 2004-10-15 2004-10-15 半導体装置及びその製造方法、並びに半導体モジュール Pending JP2006114732A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004301225A JP2006114732A (ja) 2004-10-15 2004-10-15 半導体装置及びその製造方法、並びに半導体モジュール
US11/247,234 US7547929B2 (en) 2004-10-15 2005-10-12 Semiconductor HBT MMIC device and semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004301225A JP2006114732A (ja) 2004-10-15 2004-10-15 半導体装置及びその製造方法、並びに半導体モジュール

Publications (2)

Publication Number Publication Date
JP2006114732A true JP2006114732A (ja) 2006-04-27
JP2006114732A5 JP2006114732A5 (https=) 2007-02-01

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ID=36179815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004301225A Pending JP2006114732A (ja) 2004-10-15 2004-10-15 半導体装置及びその製造方法、並びに半導体モジュール

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Country Link
US (1) US7547929B2 (https=)
JP (1) JP2006114732A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012038951A (ja) * 2010-08-09 2012-02-23 Mitsubishi Electric Corp 半導体装置、半導体回路基板および半導体回路基板の製造方法
JP2013516058A (ja) * 2009-12-23 2013-05-09 ユナイティッド モノリスィック セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子デバイスの製造方法および該方法により製造された電子デバイス

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007003182B4 (de) * 2007-01-22 2019-11-28 Snaptrack Inc. Elektrisches Bauelement
US10515872B1 (en) 2008-09-22 2019-12-24 Hrl Laboratories, Llc Metallic sub-collector for HBT and BJT transistors
US8860092B1 (en) 2008-09-22 2014-10-14 Hrl Laboratories, Llc Metallic sub-collector for HBT and BJT transistors
JP4833307B2 (ja) * 2009-02-24 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体モジュール、端子板、端子板の製造方法および半導体モジュールの製造方法
JP2014187354A (ja) * 2013-02-21 2014-10-02 Ricoh Co Ltd デバイス、及びデバイスの作製方法
JP2021197473A (ja) * 2020-06-16 2021-12-27 株式会社村田製作所 半導体装置
CN114334918A (zh) * 2021-12-28 2022-04-12 厦门市三安集成电路有限公司 混合单片微波集成电路及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0421203A (ja) * 1990-05-16 1992-01-24 Nec Corp モノリシックマイクロ波ミリ波アレイアンテナモジュール
JP2000277530A (ja) * 1999-03-25 2000-10-06 Hitachi Ltd 半導体装置及びその製造方法
JP2004088062A (ja) * 2002-05-20 2004-03-18 Sumitomo Electric Ind Ltd ドライエッチング方法、ドライエッチング装置及び半導体装置の製造方法

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US4505799A (en) * 1983-12-08 1985-03-19 General Signal Corporation ISFET sensor and method of manufacture
JPH06204449A (ja) 1992-12-28 1994-07-22 Fujitsu Ltd 光検知装置およびその製造方法
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5841197A (en) * 1994-11-18 1998-11-24 Adamic, Jr.; Fred W. Inverted dielectric isolation process
US5696466A (en) * 1995-12-08 1997-12-09 The Whitaker Corporation Heterolithic microwave integrated impedance matching circuitry and method of manufacture
WO1998013876A1 (fr) * 1996-09-26 1998-04-02 Samsung Electronics Co., Ltd. Circuit integre hybride et a frequences micro-ondes
JP4328887B2 (ja) 1999-07-05 2009-09-09 竹中エンジニアリング株式会社 移動物体検出装置
US6856004B2 (en) * 2001-07-10 2005-02-15 Anadigics, Inc. Compact layout for a semiconductor device
JP4216634B2 (ja) * 2003-04-23 2009-01-28 株式会社日立製作所 半導体装置
US7230318B2 (en) * 2003-12-24 2007-06-12 Agency For Science, Technology And Research RF and MMIC stackable micro-modules

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0421203A (ja) * 1990-05-16 1992-01-24 Nec Corp モノリシックマイクロ波ミリ波アレイアンテナモジュール
JP2000277530A (ja) * 1999-03-25 2000-10-06 Hitachi Ltd 半導体装置及びその製造方法
JP2004088062A (ja) * 2002-05-20 2004-03-18 Sumitomo Electric Ind Ltd ドライエッチング方法、ドライエッチング装置及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013516058A (ja) * 2009-12-23 2013-05-09 ユナイティッド モノリスィック セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子デバイスの製造方法および該方法により製造された電子デバイス
JP2012038951A (ja) * 2010-08-09 2012-02-23 Mitsubishi Electric Corp 半導体装置、半導体回路基板および半導体回路基板の製造方法

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Publication number Publication date
US7547929B2 (en) 2009-06-16
US20060081879A1 (en) 2006-04-20

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