JP2006114650A - 露光装置、走査露光装置、デバイス製造方法、原版のクリーニング方法、および原版 - Google Patents

露光装置、走査露光装置、デバイス製造方法、原版のクリーニング方法、および原版 Download PDF

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Publication number
JP2006114650A
JP2006114650A JP2004299790A JP2004299790A JP2006114650A JP 2006114650 A JP2006114650 A JP 2006114650A JP 2004299790 A JP2004299790 A JP 2004299790A JP 2004299790 A JP2004299790 A JP 2004299790A JP 2006114650 A JP2006114650 A JP 2006114650A
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Japan
Prior art keywords
original
stage
light
scanning
exposure apparatus
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JP2004299790A
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English (en)
Japanese (ja)
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JP2006114650A5 (https=
Inventor
Masami Yonekawa
雅見 米川
Shinichi Hara
真一 原
Makoto Eto
良 江渡
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004299790A priority Critical patent/JP2006114650A/ja
Priority to US11/250,072 priority patent/US7319507B2/en
Publication of JP2006114650A publication Critical patent/JP2006114650A/ja
Publication of JP2006114650A5 publication Critical patent/JP2006114650A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

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  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2004299790A 2004-10-14 2004-10-14 露光装置、走査露光装置、デバイス製造方法、原版のクリーニング方法、および原版 Withdrawn JP2006114650A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004299790A JP2006114650A (ja) 2004-10-14 2004-10-14 露光装置、走査露光装置、デバイス製造方法、原版のクリーニング方法、および原版
US11/250,072 US7319507B2 (en) 2004-10-14 2005-10-12 Apparatus and method for removing contaminant on original, method of manufacturing device, and original

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004299790A JP2006114650A (ja) 2004-10-14 2004-10-14 露光装置、走査露光装置、デバイス製造方法、原版のクリーニング方法、および原版

Publications (2)

Publication Number Publication Date
JP2006114650A true JP2006114650A (ja) 2006-04-27
JP2006114650A5 JP2006114650A5 (https=) 2007-11-22

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JP2004299790A Withdrawn JP2006114650A (ja) 2004-10-14 2004-10-14 露光装置、走査露光装置、デバイス製造方法、原版のクリーニング方法、および原版

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Country Link
US (1) US7319507B2 (https=)
JP (1) JP2006114650A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007300096A (ja) * 2006-04-28 2007-11-15 Asml Netherlands Bv 表面クリーニング方法、デバイス製造方法、クリーニングアセンブリ、クリーニング装置およびリソグラフィ装置
WO2011016255A1 (ja) * 2009-08-07 2011-02-10 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP4761589B1 (ja) * 2010-12-22 2011-08-31 レーザーテック株式会社 汚染防止装置、汚染防止方法、露光装置、及びパターン付きウエハの製造方法
JP2015179295A (ja) * 2009-08-07 2015-10-08 株式会社ニコン 露光装置及びデバイス製造方法
JP2022507168A (ja) * 2018-11-27 2022-01-18 エーエスエムエル ネザーランズ ビー．ブイ． メンブレンクリーニング装置
JP2025013796A (ja) * 2019-08-26 2025-01-28 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置用のペリクル膜

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7522263B2 (en) * 2005-12-27 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and method
US20070146658A1 (en) * 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
JP2008016825A (ja) * 2006-06-09 2008-01-24 Canon Inc 露光装置、除去方法及びデバイス製造方法
US7903234B2 (en) * 2006-11-27 2011-03-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US20130235357A1 (en) * 2012-03-12 2013-09-12 Kla-Tencor Corporation System and Method for Particle Control Near A Reticle
US11687012B2 (en) * 2021-06-25 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Reduce mask defect impact by contamination decompose

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3721940A1 (de) * 1987-07-02 1989-01-12 Ibm Deutschland Entfernen von partikeln von oberflaechen fester koerper durch laserbeschuss
JPS6412526U (https=) 1987-07-13 1989-01-23
JPH10223512A (ja) * 1997-02-10 1998-08-21 Nikon Corp 電子ビーム投影露光装置
JP4534260B2 (ja) * 1997-07-22 2010-09-01 株式会社ニコン 露光方法、露光装置、その製造方法及び光洗浄方法
US6385290B1 (en) * 1998-09-14 2002-05-07 Nikon Corporation X-ray apparatus
JP2000088999A (ja) 1998-09-14 2000-03-31 Nikon Corp Ｘ線装置
US6781673B2 (en) * 2000-08-25 2004-08-24 Asml Netherlands B.V. Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby
JP3940378B2 (ja) * 2003-05-26 2007-07-04 沖電気工業株式会社 半導体露光装置の自己洗浄方法と自己洗浄用透過板
JP2005129898A (ja) * 2003-09-29 2005-05-19 Canon Inc 露光装置およびデバイス製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007300096A (ja) * 2006-04-28 2007-11-15 Asml Netherlands Bv 表面クリーニング方法、デバイス製造方法、クリーニングアセンブリ、クリーニング装置およびリソグラフィ装置
WO2011016255A1 (ja) * 2009-08-07 2011-02-10 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP2014207479A (ja) * 2009-08-07 2014-10-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP5618261B2 (ja) * 2009-08-07 2014-11-05 株式会社ニコン 露光装置及びデバイス製造方法
KR101499285B1 (ko) * 2009-08-07 2015-03-05 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
JP2015179295A (ja) * 2009-08-07 2015-10-08 株式会社ニコン 露光装置及びデバイス製造方法
US9874823B2 (en) 2009-08-07 2018-01-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP4761589B1 (ja) * 2010-12-22 2011-08-31 レーザーテック株式会社 汚染防止装置、汚染防止方法、露光装置、及びパターン付きウエハの製造方法
JP2022507168A (ja) * 2018-11-27 2022-01-18 エーエスエムエル ネザーランズ ビー．ブイ． メンブレンクリーニング装置
JP2024144428A (ja) * 2018-11-27 2024-10-11 エーエスエムエル ネザーランズ ビー．ブイ． メンブレンクリーニング装置
JP2025013796A (ja) * 2019-08-26 2025-01-28 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置用のペリクル膜
JP7766761B2 (ja) 2019-08-26 2025-11-10 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置用のペリクル膜

Also Published As

Publication number Publication date
US7319507B2 (en) 2008-01-15
US20060082743A1 (en) 2006-04-20

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