JP2006108164A5 - - Google Patents

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Publication number
JP2006108164A5
JP2006108164A5 JP2004288974A JP2004288974A JP2006108164A5 JP 2006108164 A5 JP2006108164 A5 JP 2006108164A5 JP 2004288974 A JP2004288974 A JP 2004288974A JP 2004288974 A JP2004288974 A JP 2004288974A JP 2006108164 A5 JP2006108164 A5 JP 2006108164A5
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JP
Japan
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Application number
JP2004288974A
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JP2006108164A (ja
JP4254681B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2004288974A external-priority patent/JP4254681B2/ja
Priority to JP2004288974A priority Critical patent/JP4254681B2/ja
Priority to TW094130082A priority patent/TWI287305B/zh
Priority to KR1020050090409A priority patent/KR100754099B1/ko
Priority to CNB2005101080521A priority patent/CN100472723C/zh
Priority to US11/238,163 priority patent/US7344967B2/en
Publication of JP2006108164A publication Critical patent/JP2006108164A/ja
Publication of JP2006108164A5 publication Critical patent/JP2006108164A5/ja
Publication of JP4254681B2 publication Critical patent/JP4254681B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2004288974A 2004-09-30 2004-09-30 電極形成方法 Expired - Fee Related JP4254681B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004288974A JP4254681B2 (ja) 2004-09-30 2004-09-30 電極形成方法
TW094130082A TWI287305B (en) 2004-09-30 2005-09-02 Method for forming an electrode
KR1020050090409A KR100754099B1 (ko) 2004-09-30 2005-09-28 전극 형성 방법
US11/238,163 US7344967B2 (en) 2004-09-30 2005-09-29 Method for forming an electrode
CNB2005101080521A CN100472723C (zh) 2004-09-30 2005-09-29 电极形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004288974A JP4254681B2 (ja) 2004-09-30 2004-09-30 電極形成方法

Publications (3)

Publication Number Publication Date
JP2006108164A JP2006108164A (ja) 2006-04-20
JP2006108164A5 true JP2006108164A5 (ja) 2007-06-21
JP4254681B2 JP4254681B2 (ja) 2009-04-15

Family

ID=36126119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004288974A Expired - Fee Related JP4254681B2 (ja) 2004-09-30 2004-09-30 電極形成方法

Country Status (5)

Country Link
US (1) US7344967B2 (ja)
JP (1) JP4254681B2 (ja)
KR (1) KR100754099B1 (ja)
CN (1) CN100472723C (ja)
TW (1) TWI287305B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220865A (ja) * 2006-02-16 2007-08-30 Sumitomo Chemical Co Ltd 3族窒化物半導体発光素子およびその製造方法
JP5232970B2 (ja) * 2006-04-13 2013-07-10 豊田合成株式会社 半導体発光素子の製造方法及び半導体発光素子とそれを備えたランプ
JP5326225B2 (ja) * 2006-05-29 2013-10-30 日亜化学工業株式会社 窒化物半導体発光素子
DE102006054069A1 (de) * 2006-09-26 2008-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
EP1906461B1 (de) * 2006-09-26 2020-03-18 OSRAM Opto Semiconductors GmbH Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
JP5251038B2 (ja) * 2007-08-23 2013-07-31 豊田合成株式会社 発光装置
JP2009164233A (ja) * 2007-12-28 2009-07-23 Rohm Co Ltd 窒化物半導体レーザ素子およびその製造方法
JP2009231549A (ja) * 2008-03-24 2009-10-08 Toyoda Gosei Co Ltd 窒化物系半導体発光素子
US8569735B2 (en) 2008-06-16 2013-10-29 Toyoda Gosei Co., Ltd. Semiconductor light-emitting element, electrode and manufacturing method for the element, and lamp
TWI407596B (zh) * 2009-03-06 2013-09-01 Advanced Optoelectronic Tech 側邊散熱型發光二極體及其製程
JP5434343B2 (ja) * 2009-07-31 2014-03-05 豊田合成株式会社 Ito電極の形成方法、半導体素子のito電極及びito電極を備えた半導体素子
JP2011035314A (ja) * 2009-08-05 2011-02-17 Mitsubishi Chemicals Corp GaN系LED素子の製造方法
US9502612B2 (en) 2009-09-20 2016-11-22 Viagan Ltd. Light emitting diode package with enhanced heat conduction
CN102194956B (zh) * 2010-03-09 2012-08-22 上海蓝光科技有限公司 蒸镀ito的方法
US8941137B2 (en) 2011-03-06 2015-01-27 Mordehai MARGALIT Light emitting diode package and method of manufacture
JP5992174B2 (ja) * 2011-03-31 2016-09-14 シャープ株式会社 窒化物半導体発光素子およびその製造方法
KR20140001332A (ko) * 2012-06-26 2014-01-07 엘지이노텍 주식회사 발광 소자
JP2014165337A (ja) * 2013-02-25 2014-09-08 Rohm Co Ltd 発光素子、発光素子パッケージおよび発光素子の製造方法
TWI581452B (zh) 2014-10-24 2017-05-01 Nat Chunghsing Univ High light extraction rate of light-emitting diodes, conductive films, and conductive films The production method
JP2018046301A (ja) * 2017-12-14 2018-03-22 ローム株式会社 発光素子および発光素子パッケージ
DE102018111889A1 (de) * 2018-05-17 2019-11-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
CN113661578A (zh) * 2019-04-09 2021-11-16 ams有限公司 用于与焊盘的欧姆接触的氧化铟锡(ito)层的片上集成

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482216A (en) * 1980-11-11 1984-11-13 Citizen Watch Co., Ltd. Solid state complementary electrochromic display devices
US5157540A (en) * 1990-07-11 1992-10-20 Toray Industries, Inc. Electrochromic display device with improved absorption spectrum and method of producing it
US6351068B2 (en) * 1995-12-20 2002-02-26 Mitsui Chemicals, Inc. Transparent conductive laminate and electroluminescence light-emitting element using same
JP3693468B2 (ja) * 1997-07-23 2005-09-07 シャープ株式会社 半導体発光素子
JP3394488B2 (ja) 2000-01-24 2003-04-07 星和電機株式会社 窒化ガリウム系半導体発光素子及びその製造方法
JP2003017748A (ja) 2001-06-27 2003-01-17 Seiwa Electric Mfg Co Ltd 窒化ガリウム系化合物半導体発光素子及びその製造方法
US6995401B2 (en) * 2002-10-23 2006-02-07 Shin-Etsu Handotai Co., Ltd. Light emitting device and method of fabricating the same
KR20040065503A (ko) * 2003-01-14 2004-07-22 삼성코닝 주식회사 인듐주석 산화물 막의 형성방법
JP4512940B2 (ja) * 2003-12-24 2010-07-28 三菱マテリアル株式会社 錫ドープ酸化インジウム微粒子分散液とその製造方法、および該分散液を用いた熱線遮蔽性を有する合わせガラス用中間膜、ならびにその合わせガラス

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