JP2006100787A - 発光装置および発光素子 - Google Patents

発光装置および発光素子 Download PDF

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Publication number
JP2006100787A
JP2006100787A JP2005204983A JP2005204983A JP2006100787A JP 2006100787 A JP2006100787 A JP 2006100787A JP 2005204983 A JP2005204983 A JP 2005204983A JP 2005204983 A JP2005204983 A JP 2005204983A JP 2006100787 A JP2006100787 A JP 2006100787A
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JP
Japan
Prior art keywords
light
light emitting
emitting device
led element
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005204983A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006100787A5 (enExample
Inventor
Yoshinobu Suehiro
好伸 末広
Koji Takaku
浩二 田角
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2005204983A priority Critical patent/JP2006100787A/ja
Priority to DE102005041095A priority patent/DE102005041095A1/de
Priority to US11/214,018 priority patent/US7453092B2/en
Publication of JP2006100787A publication Critical patent/JP2006100787A/ja
Publication of JP2006100787A5 publication Critical patent/JP2006100787A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2005204983A 2004-08-31 2005-07-13 発光装置および発光素子 Pending JP2006100787A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005204983A JP2006100787A (ja) 2004-08-31 2005-07-13 発光装置および発光素子
DE102005041095A DE102005041095A1 (de) 2004-08-31 2005-08-30 Lichtemissionsvorrichtung und Lichtemissionselement
US11/214,018 US7453092B2 (en) 2004-08-31 2005-08-30 Light emitting device and light emitting element having predetermined optical form

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004253447 2004-08-31
JP2005204983A JP2006100787A (ja) 2004-08-31 2005-07-13 発光装置および発光素子

Publications (2)

Publication Number Publication Date
JP2006100787A true JP2006100787A (ja) 2006-04-13
JP2006100787A5 JP2006100787A5 (enExample) 2010-02-04

Family

ID=35941797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005204983A Pending JP2006100787A (ja) 2004-08-31 2005-07-13 発光装置および発光素子

Country Status (3)

Country Link
US (1) US7453092B2 (enExample)
JP (1) JP2006100787A (enExample)
DE (1) DE102005041095A1 (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008066557A (ja) * 2006-09-08 2008-03-21 Matsushita Electric Ind Co Ltd 半導体発光装置および半導体発光装置の製造方法
JP2008108952A (ja) * 2006-10-26 2008-05-08 Matsushita Electric Ind Co Ltd 半導体発光装置および半導体発光装置の製造方法
JP2008300501A (ja) * 2007-05-30 2008-12-11 Panasonic Corp 半導体発光素子、半導体発光装置およびその製造方法
JP2011243713A (ja) * 2010-05-18 2011-12-01 Citizen Electronics Co Ltd 発光装置
WO2011152262A1 (ja) * 2010-05-31 2011-12-08 日亜化学工業株式会社 発光装置及びその製造方法
JP2013033890A (ja) * 2011-08-03 2013-02-14 Toyoda Gosei Co Ltd 発光装置
JP2013038438A (ja) * 2007-11-14 2013-02-21 Cree Inc ワイヤボンディングのないウェーハ段階のｌｅｄ
JP2013517632A (ja) * 2010-01-19 2013-05-16 エルジー イノテック カンパニー リミテッド パッケージおよびその製造方法
JP2014183109A (ja) * 2013-03-18 2014-09-29 Nichia Chem Ind Ltd 発光素子保持構造体
JP2014203874A (ja) * 2013-04-02 2014-10-27 スタンレー電気株式会社 フリップチップ型半導体発光素子、半導体装置及びその製造方法
US9130098B2 (en) 2010-12-08 2015-09-08 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US9293643B2 (en) 2010-04-08 2016-03-22 Nichia Corporation Method of manufacturing light emitting device including light emitting element and wavelength converting member
US11482643B2 (en) 2019-05-16 2022-10-25 Nichia Corporation Light-emitting device and method for manufacturing light-emitting device

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JP2009500872A (ja) * 2005-07-11 2009-01-08 ルミネイション リミテッド ライアビリティ カンパニー 光抽出が改善したレーザリフトオフｌｅｄ
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US20070257271A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with encapsulated converging optical element
US20070257270A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with wedge-shaped optical element
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
WO2008011377A2 (en) * 2006-07-17 2008-01-24 3M Innovative Properties Company Led package with converging extractor
US7439548B2 (en) * 2006-08-11 2008-10-21 Bridgelux, Inc Surface mountable chip
EP2003702A1 (en) * 2007-06-13 2008-12-17 High Power Optoelectronics Inc. Semiconductor light emitting device and method of fabricating the same
US7867793B2 (en) * 2007-07-09 2011-01-11 Koninklijke Philips Electronics N.V. Substrate removal during LED formation
US8410511B2 (en) * 2008-10-17 2013-04-02 Goldeneye, Inc. Methods for high temperature processing of epitaxial chips
JP2010245481A (ja) * 2009-04-10 2010-10-28 Sharp Corp 発光装置
DE102009051746A1 (de) * 2009-09-30 2011-03-31 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP5446915B2 (ja) * 2010-01-21 2014-03-19 セイコーエプソン株式会社 生体情報検出器及び生体情報測定装置
KR101763972B1 (ko) * 2010-02-09 2017-08-01 니치아 카가쿠 고교 가부시키가이샤 발광 장치
US8319247B2 (en) * 2010-03-25 2012-11-27 Koninklijke Philips Electronics N.V. Carrier for a light emitting device
US10308545B2 (en) 2010-10-26 2019-06-04 Schott Ag Highly refractive thin glasses
DE102010042945A1 (de) * 2010-10-26 2012-04-26 Schott Ag Transparente Schichtverbunde
US10343946B2 (en) 2010-10-26 2019-07-09 Schott Ag Highly refractive thin glasses
DE102011012608A1 (de) * 2011-02-28 2012-08-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Lichtauskoppelstrukturen in einem Halbleiterkörper und Licht emittierender Halbleiterkörper
TW201240145A (en) * 2011-03-21 2012-10-01 Walsin Lihwa Corp Light emitting diode and method of manufacturing the same
KR101880445B1 (ko) * 2011-07-14 2018-07-24 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛
US9117941B2 (en) * 2011-09-02 2015-08-25 King Dragon International Inc. LED package and method of the same
US20150001570A1 (en) * 2011-09-02 2015-01-01 King Dragon International Inc. LED Package and Method of the Same
CN105428510B (zh) * 2014-09-03 2018-01-30 展晶科技(深圳)有限公司 覆晶式发光二极管封装结构
DE102017126268A1 (de) * 2017-11-09 2019-05-09 Osram Opto Semiconductors Gmbh Träger, Anordnung mit einem Substrat und einem Träger und Verfahren zum Herstellen eines Trägers
US11610868B2 (en) * 2019-01-29 2023-03-21 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
DE112020000762A5 (de) 2019-02-11 2021-10-28 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement, optoelektronische anordnung und verfahren
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
DE112020002077A5 (de) 2019-04-23 2022-01-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Led modul, led displaymodul und verfahren zu dessen herstellung
JP7594578B2 (ja) 2019-09-20 2024-12-04 エイエムエス－オスラム インターナショナル ゲーエムベーハー 光電子構造素子、半導体構造およびそれらに関する方法

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Cited By (22)

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Publication number Priority date Publication date Assignee Title
JP2008066557A (ja) * 2006-09-08 2008-03-21 Matsushita Electric Ind Co Ltd 半導体発光装置および半導体発光装置の製造方法
JP2008108952A (ja) * 2006-10-26 2008-05-08 Matsushita Electric Ind Co Ltd 半導体発光装置および半導体発光装置の製造方法
JP2008300501A (ja) * 2007-05-30 2008-12-11 Panasonic Corp 半導体発光素子、半導体発光装置およびその製造方法
US10199360B2 (en) 2007-11-14 2019-02-05 Cree, Inc. Wire bond free wafer level LED
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US9293642B2 (en) 2010-04-08 2016-03-22 Nichia Corporation Light emitting device including light emitting element and wavelength converting member with regions having irregular atomic arrangments
US9293643B2 (en) 2010-04-08 2016-03-22 Nichia Corporation Method of manufacturing light emitting device including light emitting element and wavelength converting member
JP2011243713A (ja) * 2010-05-18 2011-12-01 Citizen Electronics Co Ltd 発光装置
US9502608B2 (en) 2010-05-31 2016-11-22 Nichia Corporation Method of manufacturing a light emitting device in which light emitting element and light transmissive member are directly bonded
JP5725022B2 (ja) * 2010-05-31 2015-05-27 日亜化学工業株式会社 発光装置及びその製造方法
US10043948B2 (en) 2010-05-31 2018-08-07 Nichia Corporation Light emitting device in which light emitting element and light transmissive member are directly bonded
WO2011152262A1 (ja) * 2010-05-31 2011-12-08 日亜化学工業株式会社 発光装置及びその製造方法
US10658545B2 (en) 2010-05-31 2020-05-19 Nichia Corporation Light emitting device in which light emitting element and light transmissive member are directly bonded
US9130098B2 (en) 2010-12-08 2015-09-08 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2013033890A (ja) * 2011-08-03 2013-02-14 Toyoda Gosei Co Ltd 発光装置
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JP2014183109A (ja) * 2013-03-18 2014-09-29 Nichia Chem Ind Ltd 発光素子保持構造体
JP2014203874A (ja) * 2013-04-02 2014-10-27 スタンレー電気株式会社 フリップチップ型半導体発光素子、半導体装置及びその製造方法
US11482643B2 (en) 2019-05-16 2022-10-25 Nichia Corporation Light-emitting device and method for manufacturing light-emitting device

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Publication number Publication date
DE102005041095A1 (de) 2006-05-11
US7453092B2 (en) 2008-11-18
US20060043402A1 (en) 2006-03-02

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