JP2006100475A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP2006100475A JP2006100475A JP2004283263A JP2004283263A JP2006100475A JP 2006100475 A JP2006100475 A JP 2006100475A JP 2004283263 A JP2004283263 A JP 2004283263A JP 2004283263 A JP2004283263 A JP 2004283263A JP 2006100475 A JP2006100475 A JP 2006100475A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor light
- light emitting
- emitting element
- electrode forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 239000013078 crystal Substances 0.000 claims abstract description 53
- 238000005530 etching Methods 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 14
- 239000011777 magnesium Substances 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- -1 nitride compound Chemical class 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 238000005253 cladding Methods 0.000 abstract description 15
- 230000004888 barrier function Effects 0.000 abstract description 9
- 238000003475 lamination Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000605 extraction Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005457 optimization Methods 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101150054854 POU1F1 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004283263A JP2006100475A (ja) | 2004-09-29 | 2004-09-29 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004283263A JP2006100475A (ja) | 2004-09-29 | 2004-09-29 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006100475A true JP2006100475A (ja) | 2006-04-13 |
| JP2006100475A5 JP2006100475A5 (enExample) | 2007-03-15 |
Family
ID=36240011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004283263A Pending JP2006100475A (ja) | 2004-09-29 | 2004-09-29 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006100475A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100867499B1 (ko) | 2007-02-27 | 2008-11-06 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP2008288538A (ja) * | 2007-05-15 | 2008-11-27 | Philips Lumileds Lightng Co Llc | ＩＩＩ族窒化物発光デバイスのためのｐ型層 |
| WO2010111834A1 (en) * | 2009-04-01 | 2010-10-07 | Hong Kong Applied Science and Technology Research Institute Co. Ltd | Quasi-vertical light emitting diode |
| US20110121358A1 (en) * | 2006-05-15 | 2011-05-26 | Koninklijke Philips Electronics N.V. | P-type layer for a iii-nitride light emitting device |
| CN102867897A (zh) * | 2011-07-08 | 2013-01-09 | Lg伊诺特有限公司 | 发光器件 |
| JP2013105917A (ja) * | 2011-11-14 | 2013-05-30 | Dowa Electronics Materials Co Ltd | 半導体発光素子およびその製造方法 |
| US8476671B2 (en) | 2010-05-18 | 2013-07-02 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package, and lighting device |
| US8866374B2 (en) | 2010-04-09 | 2014-10-21 | Lg Innotek Co., Ltd. | Light emitting device having a multilayer re-emission layer and light emitting device package including the same |
| JP2015079999A (ja) * | 2015-01-29 | 2015-04-23 | 株式会社東芝 | 半導体発光素子 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06291368A (ja) * | 1993-04-03 | 1994-10-18 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
| JPH1051070A (ja) * | 1996-07-29 | 1998-02-20 | Fujitsu Ltd | 半導体レーザ |
| JPH10215034A (ja) * | 1997-01-30 | 1998-08-11 | Toshiba Corp | 化合物半導体素子及びその製造方法 |
| JP2002261027A (ja) * | 2001-03-02 | 2002-09-13 | Mitsubishi Cable Ind Ltd | ＧａＮ系半導体基材およびその製造方法 |
| JP2002314131A (ja) * | 2001-04-10 | 2002-10-25 | Showa Denko Kk | 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子 |
| JP2003179301A (ja) * | 2001-09-17 | 2003-06-27 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子およびその形成方法 |
| JP2003218396A (ja) * | 2001-11-15 | 2003-07-31 | Mitsubishi Cable Ind Ltd | 紫外線発光素子 |
| JP2004134772A (ja) * | 2002-09-18 | 2004-04-30 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子 |
-
2004
- 2004-09-29 JP JP2004283263A patent/JP2006100475A/ja active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06291368A (ja) * | 1993-04-03 | 1994-10-18 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
| JPH1051070A (ja) * | 1996-07-29 | 1998-02-20 | Fujitsu Ltd | 半導体レーザ |
| JPH10215034A (ja) * | 1997-01-30 | 1998-08-11 | Toshiba Corp | 化合物半導体素子及びその製造方法 |
| JP2002261027A (ja) * | 2001-03-02 | 2002-09-13 | Mitsubishi Cable Ind Ltd | ＧａＮ系半導体基材およびその製造方法 |
| JP2002314131A (ja) * | 2001-04-10 | 2002-10-25 | Showa Denko Kk | 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子 |
| JP2003179301A (ja) * | 2001-09-17 | 2003-06-27 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子およびその形成方法 |
| JP2003218396A (ja) * | 2001-11-15 | 2003-07-31 | Mitsubishi Cable Ind Ltd | 紫外線発光素子 |
| JP2004134772A (ja) * | 2002-09-18 | 2004-04-30 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110121358A1 (en) * | 2006-05-15 | 2011-05-26 | Koninklijke Philips Electronics N.V. | P-type layer for a iii-nitride light emitting device |
| KR100867499B1 (ko) | 2007-02-27 | 2008-11-06 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP2008288538A (ja) * | 2007-05-15 | 2008-11-27 | Philips Lumileds Lightng Co Llc | ＩＩＩ族窒化物発光デバイスのためのｐ型層 |
| WO2010111834A1 (en) * | 2009-04-01 | 2010-10-07 | Hong Kong Applied Science and Technology Research Institute Co. Ltd | Quasi-vertical light emitting diode |
| US8866374B2 (en) | 2010-04-09 | 2014-10-21 | Lg Innotek Co., Ltd. | Light emitting device having a multilayer re-emission layer and light emitting device package including the same |
| US8476671B2 (en) | 2010-05-18 | 2013-07-02 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package, and lighting device |
| CN102867897A (zh) * | 2011-07-08 | 2013-01-09 | Lg伊诺特有限公司 | 发光器件 |
| JP2013105917A (ja) * | 2011-11-14 | 2013-05-30 | Dowa Electronics Materials Co Ltd | 半導体発光素子およびその製造方法 |
| JP2015079999A (ja) * | 2015-01-29 | 2015-04-23 | 株式会社東芝 | 半導体発光素子 |
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