JP2006100475A5 - - Google Patents
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- Publication number
- JP2006100475A5 JP2006100475A5 JP2004283263A JP2004283263A JP2006100475A5 JP 2006100475 A5 JP2006100475 A5 JP 2006100475A5 JP 2004283263 A JP2004283263 A JP 2004283263A JP 2004283263 A JP2004283263 A JP 2004283263A JP 2006100475 A5 JP2006100475 A5 JP 2006100475A5
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- JP
- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004283263A JP2006100475A (ja) | 2004-09-29 | 2004-09-29 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004283263A JP2006100475A (ja) | 2004-09-29 | 2004-09-29 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006100475A JP2006100475A (ja) | 2006-04-13 |
| JP2006100475A5 true JP2006100475A5 (enExample) | 2007-03-15 |
Family
ID=36240011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004283263A Pending JP2006100475A (ja) | 2004-09-29 | 2004-09-29 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006100475A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7906357B2 (en) * | 2006-05-15 | 2011-03-15 | Koninklijke Philips Electronics N.V. | P-type layer for a III-nitride light emitting device |
| KR100867499B1 (ko) | 2007-02-27 | 2008-11-06 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP2008288538A (ja) * | 2007-05-15 | 2008-11-27 | Philips Lumileds Lightng Co Llc | ＩＩＩ族窒化物発光デバイスのためのｐ型層 |
| WO2010111834A1 (en) * | 2009-04-01 | 2010-10-07 | Hong Kong Applied Science and Technology Research Institute Co. Ltd | Quasi-vertical light emitting diode |
| KR101011757B1 (ko) | 2010-04-09 | 2011-02-07 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
| KR101646664B1 (ko) | 2010-05-18 | 2016-08-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
| US20120119254A1 (en) * | 2011-07-08 | 2012-05-17 | Yong Tae Moon | Light emitting device, light emitting device package and lighting system including the same |
| JP5988568B2 (ja) * | 2011-11-14 | 2016-09-07 | Ｄｏｗａエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
| JP5973006B2 (ja) * | 2015-01-29 | 2016-08-17 | 株式会社東芝 | 半導体発光素子 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2836687B2 (ja) * | 1993-04-03 | 1998-12-14 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JPH1051070A (ja) * | 1996-07-29 | 1998-02-20 | Fujitsu Ltd | 半導体レーザ |
| JP3325479B2 (ja) * | 1997-01-30 | 2002-09-17 | 株式会社東芝 | 化合物半導体素子及びその製造方法 |
| JP3583375B2 (ja) * | 2001-03-02 | 2004-11-04 | 三菱電線工業株式会社 | ＧａＮ系半導体基材およびその製造方法 |
| JP2002314131A (ja) * | 2001-04-10 | 2002-10-25 | Showa Denko Kk | 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子 |
| JP4046582B2 (ja) * | 2001-09-17 | 2008-02-13 | 三洋電機株式会社 | 窒化物系半導体発光素子およびその形成方法 |
| JP2003218396A (ja) * | 2001-11-15 | 2003-07-31 | Mitsubishi Cable Ind Ltd | 紫外線発光素子 |
| JP4162560B2 (ja) * | 2002-09-18 | 2008-10-08 | 三洋電機株式会社 | 窒化物系半導体発光素子 |
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2004
- 2004-09-29 JP JP2004283263A patent/JP2006100475A/ja active Pending