JP2006080495A5 - - Google Patents
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- Publication number
- JP2006080495A5 JP2006080495A5 JP2005225305A JP2005225305A JP2006080495A5 JP 2006080495 A5 JP2006080495 A5 JP 2006080495A5 JP 2005225305 A JP2005225305 A JP 2005225305A JP 2005225305 A JP2005225305 A JP 2005225305A JP 2006080495 A5 JP2006080495 A5 JP 2006080495A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- forming
- gate electrode
- layer
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 44
- 238000000034 method Methods 0.000 claims 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- 229910052797 bismuth Inorganic materials 0.000 claims 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 5
- 229910052698 phosphorus Inorganic materials 0.000 claims 5
- 239000011574 phosphorus Substances 0.000 claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 229910052787 antimony Inorganic materials 0.000 claims 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 4
- 229910052785 arsenic Inorganic materials 0.000 claims 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 4
- 230000003197 catalytic effect Effects 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 229910052734 helium Inorganic materials 0.000 claims 3
- 239000001307 helium Substances 0.000 claims 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 3
- 229910052743 krypton Inorganic materials 0.000 claims 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052754 neon Inorganic materials 0.000 claims 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 3
- 229910052724 xenon Inorganic materials 0.000 claims 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005225305A JP4906039B2 (ja) | 2004-08-03 | 2005-08-03 | 半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004227292 | 2004-08-03 | ||
| JP2004227292 | 2004-08-03 | ||
| JP2004234677 | 2004-08-11 | ||
| JP2004234677 | 2004-08-11 | ||
| JP2005225305A JP4906039B2 (ja) | 2004-08-03 | 2005-08-03 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006080495A JP2006080495A (ja) | 2006-03-23 |
| JP2006080495A5 true JP2006080495A5 (enrdf_load_stackoverflow) | 2008-08-07 |
| JP4906039B2 JP4906039B2 (ja) | 2012-03-28 |
Family
ID=36159663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005225305A Expired - Fee Related JP4906039B2 (ja) | 2004-08-03 | 2005-08-03 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4906039B2 (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4746021B2 (ja) * | 2006-10-13 | 2011-08-10 | 株式会社神戸製鋼所 | 薄膜トランジスタ基板の製造方法、および表示デバイス |
| KR101043508B1 (ko) | 2006-10-13 | 2011-06-23 | 가부시키가이샤 고베 세이코쇼 | 박막 트랜지스터 기판 및 표시 디바이스 |
| JP5197058B2 (ja) | 2007-04-09 | 2013-05-15 | キヤノン株式会社 | 発光装置とその作製方法 |
| JP2009004518A (ja) | 2007-06-20 | 2009-01-08 | Kobe Steel Ltd | 薄膜トランジスタ基板、および表示デバイス |
| JP2010056541A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| CN101714546B (zh) * | 2008-10-03 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| WO2010038820A1 (en) * | 2008-10-03 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| EP2172977A1 (en) * | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI831050B (zh) | 2008-11-07 | 2024-02-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| EP2515337B1 (en) * | 2008-12-24 | 2016-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| EP2284891B1 (en) * | 2009-08-07 | 2019-07-24 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011043194A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4236716B2 (ja) * | 1997-09-29 | 2009-03-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4718700B2 (ja) * | 2001-03-16 | 2011-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4615197B2 (ja) * | 2002-08-30 | 2011-01-19 | シャープ株式会社 | Ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法 |
-
2005
- 2005-08-03 JP JP2005225305A patent/JP4906039B2/ja not_active Expired - Fee Related
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