JP4906039B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4906039B2
JP4906039B2 JP2005225305A JP2005225305A JP4906039B2 JP 4906039 B2 JP4906039 B2 JP 4906039B2 JP 2005225305 A JP2005225305 A JP 2005225305A JP 2005225305 A JP2005225305 A JP 2005225305A JP 4906039 B2 JP4906039 B2 JP 4906039B2
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Japan
Prior art keywords
film
insulating film
semiconductor
region
semiconductor layer
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Expired - Fee Related
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JP2005225305A
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English (en)
Japanese (ja)
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JP2006080495A5 (enrdf_load_stackoverflow
JP2006080495A (ja
Inventor
舜平 山崎
慎志 前川
達也 本田
博信 小路
理 中村
幸恵 鈴木
郁子 川俣
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005225305A priority Critical patent/JP4906039B2/ja
Publication of JP2006080495A publication Critical patent/JP2006080495A/ja
Publication of JP2006080495A5 publication Critical patent/JP2006080495A5/ja
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Publication of JP4906039B2 publication Critical patent/JP4906039B2/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2005225305A 2004-08-03 2005-08-03 半導体装置の作製方法 Expired - Fee Related JP4906039B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005225305A JP4906039B2 (ja) 2004-08-03 2005-08-03 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004227292 2004-08-03
JP2004227292 2004-08-03
JP2004234677 2004-08-11
JP2004234677 2004-08-11
JP2005225305A JP4906039B2 (ja) 2004-08-03 2005-08-03 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006080495A JP2006080495A (ja) 2006-03-23
JP2006080495A5 JP2006080495A5 (enrdf_load_stackoverflow) 2008-08-07
JP4906039B2 true JP4906039B2 (ja) 2012-03-28

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Family Applications (1)

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JP2005225305A Expired - Fee Related JP4906039B2 (ja) 2004-08-03 2005-08-03 半導体装置の作製方法

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JP (1) JP4906039B2 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4746021B2 (ja) * 2006-10-13 2011-08-10 株式会社神戸製鋼所 薄膜トランジスタ基板の製造方法、および表示デバイス
KR101043508B1 (ko) 2006-10-13 2011-06-23 가부시키가이샤 고베 세이코쇼 박막 트랜지스터 기판 및 표시 디바이스
JP5197058B2 (ja) 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
JP2009004518A (ja) 2007-06-20 2009-01-08 Kobe Steel Ltd 薄膜トランジスタ基板、および表示デバイス
US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101435501B1 (ko) 2008-10-03 2014-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
CN101714546B (zh) * 2008-10-03 2014-05-14 株式会社半导体能源研究所 显示装置及其制造方法
TW202115917A (zh) * 2008-11-07 2021-04-16 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
EP2515337B1 (en) * 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
EP2284891B1 (en) * 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4236716B2 (ja) * 1997-09-29 2009-03-11 株式会社半導体エネルギー研究所 半導体装置
JP4718700B2 (ja) * 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4615197B2 (ja) * 2002-08-30 2011-01-19 シャープ株式会社 Ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法

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JP2006080495A (ja) 2006-03-23

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