JP2006073906A - 露光装置、露光システム及びデバイス製造方法 - Google Patents

露光装置、露光システム及びデバイス製造方法 Download PDF

Info

Publication number
JP2006073906A
JP2006073906A JP2004257844A JP2004257844A JP2006073906A JP 2006073906 A JP2006073906 A JP 2006073906A JP 2004257844 A JP2004257844 A JP 2004257844A JP 2004257844 A JP2004257844 A JP 2004257844A JP 2006073906 A JP2006073906 A JP 2006073906A
Authority
JP
Japan
Prior art keywords
liquid
pipe
exposure apparatus
exposure
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004257844A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006073906A5 (enrdf_load_stackoverflow
Inventor
Yuichi Iwasaki
裕一 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004257844A priority Critical patent/JP2006073906A/ja
Publication of JP2006073906A publication Critical patent/JP2006073906A/ja
Publication of JP2006073906A5 publication Critical patent/JP2006073906A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2004257844A 2004-09-06 2004-09-06 露光装置、露光システム及びデバイス製造方法 Withdrawn JP2006073906A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004257844A JP2006073906A (ja) 2004-09-06 2004-09-06 露光装置、露光システム及びデバイス製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004257844A JP2006073906A (ja) 2004-09-06 2004-09-06 露光装置、露光システム及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2006073906A true JP2006073906A (ja) 2006-03-16
JP2006073906A5 JP2006073906A5 (enrdf_load_stackoverflow) 2007-10-18

Family

ID=36154169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004257844A Withdrawn JP2006073906A (ja) 2004-09-06 2004-09-06 露光装置、露光システム及びデバイス製造方法

Country Status (1)

Country Link
JP (1) JP2006073906A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303295A (ja) * 2005-04-22 2006-11-02 Nikon Corp 露光装置及びデバイスの製造方法
WO2007023813A1 (ja) * 2005-08-23 2007-03-01 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2008103374A (ja) * 2006-10-17 2008-05-01 Tokyo Electron Ltd 複合配管及び複合配管を備える塗布・現像処理装置
US7679717B2 (en) 2005-12-28 2010-03-16 Canon Kabushiki Kaisha Exposure apparatus
JP2011124573A (ja) * 2009-12-09 2011-06-23 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
US7978305B2 (en) 2007-06-29 2011-07-12 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
KR20110137343A (ko) * 2009-03-10 2011-12-22 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303295A (ja) * 2005-04-22 2006-11-02 Nikon Corp 露光装置及びデバイスの製造方法
US8018571B2 (en) 2005-08-23 2011-09-13 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
WO2007023813A1 (ja) * 2005-08-23 2007-03-01 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP5040653B2 (ja) * 2005-08-23 2012-10-03 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US7679717B2 (en) 2005-12-28 2010-03-16 Canon Kabushiki Kaisha Exposure apparatus
JP2008103374A (ja) * 2006-10-17 2008-05-01 Tokyo Electron Ltd 複合配管及び複合配管を備える塗布・現像処理装置
US7978305B2 (en) 2007-06-29 2011-07-12 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
KR20110137343A (ko) * 2009-03-10 2011-12-22 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
JP2014057106A (ja) * 2009-03-10 2014-03-27 Nikon Corp 液浸露光装置、液浸露光方法、及びデバイス製造方法
KR101712219B1 (ko) 2009-03-10 2017-03-03 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
JP2011124573A (ja) * 2009-12-09 2011-06-23 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
US9229334B2 (en) 2009-12-09 2016-01-05 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method
US9746782B2 (en) 2009-12-09 2017-08-29 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method
US10018921B2 (en) 2009-12-09 2018-07-10 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method

Similar Documents

Publication Publication Date Title
JP4510494B2 (ja) 露光装置
US7224434B2 (en) Exposure method
US8797502B2 (en) Exposure apparatus, exposure method, and method for producing device with electricity removal device by adding additive to liquid
JP2005286068A (ja) 露光装置及び方法
JP2005236047A (ja) 露光装置及び方法
JP4708876B2 (ja) 液浸露光装置
JP2006319064A (ja) 測定装置、露光方法及び装置
JP2006216733A (ja) 露光装置、光学素子の製造方法及びデバイス製造方法
JP2007281308A (ja) 液浸露光装置
JP5765415B2 (ja) 液浸露光装置、液浸露光方法及びデバイス製造方法
JP4852951B2 (ja) 露光装置、露光方法及びデバイス製造方法
JP2006073906A (ja) 露光装置、露光システム及びデバイス製造方法
JP2006237291A (ja) 露光装置
JP2007184336A (ja) 露光装置及びデバイス製造方法
JP2008218653A (ja) 露光装置及びデバイス製造方法
WO2007083686A1 (ja) 露光装置
JP2009094145A (ja) 露光装置、露光方法およびデバイス製造方法
JP4752320B2 (ja) 基板保持装置及び露光装置、基板保持方法、露光方法、並びにデバイス製造方法
JP2006060016A (ja) 流体給排装置及びそれを有する露光装置
JP2008218595A (ja) 露光装置
JP2008182167A (ja) 露光装置、露光方法及び露光システム
JP2007036193A (ja) 露光装置
JP2007115730A (ja) 露光装置
JP2006319065A (ja) 露光装置
JP2007019392A (ja) 露光装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070903

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070903

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20100208

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100219