JP2006073906A - Aligner, exposure system, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aligner for increasing reliability (e.g. dissolved gas amount, temperature, transmittance, or the like) of an immersion liquid to prevent deterioration in pattern to be transferred, and to provide an exposure system, and a device manufacturing method. <P>SOLUTION: The aligner exposes a reticle pattern to an object to be treated via a projection optical system, and has a liquid supplying part for supplying liquid between the projection optical system and the object to be treated. The liquid supplier has a dually structured supplying pipe that includes first piping for making the liquid flow, and second piping disposed to surround the first piping. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention generally relates to an exposure apparatus, and in particular, a semiconductor chip such as an IC or LSI, a display element such as a liquid crystal panel, a detection element such as a magnetic head, an imaging element such as a CCD, or the like used in micromechanics. The present invention relates to an exposure apparatus used for manufacturing a pattern. The present invention is suitable for a so-called immersion type exposure apparatus that immerses the final surface of the projection optical system and the surface of the object to be processed in a liquid and exposes the object to be processed through the liquid.

  When manufacturing fine semiconductor elements such as semiconductor memories and logic circuits or liquid crystal display elements using photolithography technology, a circuit pattern drawn on a reticle (mask) is projected onto a wafer or the like by a projection optical system. Conventionally, a reduction projection exposure apparatus for transferring a circuit pattern has been used.

  The minimum dimension (resolution) that can be transferred by the reduction projection exposure apparatus is proportional to the wavelength of light used for exposure and inversely proportional to the numerical aperture (NA) of the projection optical system. Therefore, the shorter the wavelength and the higher the NA, the better the resolution. For this reason, with the recent demand for miniaturization of semiconductor elements, the wavelength of exposure light has been shortened, and the wavelength of ultraviolet rays used from KrF excimer laser (wavelength about 248 nm) to ArF excimer laser (wavelength about 193 nm) is short. It has become.

  Under such circumstances, immersion exposure has attracted attention as a technique for further improving the resolution while using a light source such as an ArF excimer laser. In immersion exposure, the numerical aperture (NA) of the projection optical system (so-called high NA) is further increased by making the medium on the wafer side of the projection optical system liquid. The NA of the projection optical system is NA = n · sin θ, where n is the refractive index of the medium, and therefore NA is increased to n by satisfying a medium having a refractive index higher than the refractive index of air (n> 1). can do.

In immersion exposure, there are roughly two methods for filling a liquid between the final surface of the projection optical system and the wafer. The first method is a method in which the final surface of the projection optical system and the entire wafer are arranged in a liquid tank, and an exposure apparatus using such a method is proposed in Patent Document 1, for example. The second method is a local fill method in which a liquid is allowed to flow only in a space sandwiched between the projection optical system and the wafer surface. Exposure apparatuses using such a method are proposed in, for example, Patent Document 2 and Patent Document 3. ing.
JP-A-6-124873 International Publication No. 99/49504 Pamphlet JP 2004-165666 A

  In immersion exposure, (1) removal of bubbles in the immersion liquid and (2) liquid in a liquid (hereinafter referred to as “immersion liquid”) supplied to the gap between the final surface of the projection optical system and the wafer. There are three problems: temperature stability of the immersion liquid, and (3) maintaining the transmittance of the immersion liquid with respect to the exposure light.

  (1) Regarding the removal of bubbles in the immersion liquid, if there are bubbles in the exposure area of the immersion liquid supplied to the gap, the exposure light is scattered, so that the transferred pattern line width exceeds the allowable range. In extreme cases, there is a problem that pattern insulation or short-circuiting (pattern degradation) occurs. Therefore, it is necessary to incorporate a deaeration device in the immersion liquid supply system and to perform deaeration processing on the immersion liquid supplied to the gap to remove bubbles in the immersion liquid. The concentration of the gas dissolved in the immersion liquid is preferably 50% or less of the saturation concentration. For example, when the atmosphere is air, it is preferable that the amount of dissolved oxygen dissolved in the immersion liquid from the atmospheric partial pressure is 4.5 ppm or less and the amount of dissolved nitrogen is 7 ppm or less. The immersion liquid thus degassed can absorb minute bubbles into the immersion liquid and prevent deterioration of the pattern.

However, in order to prevent contamination of the immersion liquid, a resin such as Teflon resin is generally used for the pipe that supplies the immersion liquid. The gas permeability of Teflon resin or polyethylene resin is about 10 ^{−13 to} 10 ⁻¹² [cm ³ · cm / cm ² · s · Pa]. The gas dissolved in the liquid cannot be ignored. Moreover, the gas which melt | dissolves in immersion liquid from a joint part cannot be disregarded. As a result, the amount of dissolved gas in the immersion liquid supplied to the gap increases, and the removal of the gas in the immersion liquid in the exposure area becomes incomplete, and as described above, the pattern deteriorates. .

  (2) Regarding the temperature stability of the immersion liquid, when the temperature of the immersion liquid changes, the refractive index of the immersion liquid also changes, and the aberration of the optical system changes. Therefore, there arises a problem that the focus position fluctuates and the transferred pattern line width fluctuates beyond an allowable range (pattern degradation). For example, consider a case where the NA of the projection optical system is 1.2, the immersion liquid is pure water, and the pure water is supplied to a gap of 2 mm (ie, the distance between the final surface of the projection optical system and the wafer). When the temperature of pure water changes by 0.1 degree, the refractive index fluctuates by about 10 ppm, so that a focus position shift of about 0.05 μm occurs, resulting in deterioration of the pattern. Therefore, it is necessary to provide a temperature control device in the immersion liquid supply system to control the immersion liquid to a predetermined temperature.

  However, if the length of the pipe from the temperature control device to the gap becomes longer, it will be affected by the ambient environmental temperature, so that the aberration of the optical system changes as described above, resulting in pattern deterioration. End up.

  (3) Regarding the maintenance of the transmittance of the immersion liquid with respect to the exposure light, if oxygen is dissolved in the immersion liquid, the light absorption of the immersion liquid increases and the amount of exposure reaching the wafer decreases. There arises a problem that the line width fluctuates. Therefore, as with the removal of bubbles in the immersion liquid, it is necessary to incorporate a deaeration device in the immersion liquid supply system and perform deaeration treatment on the immersion liquid supplied to the gap to remove dissolved oxygen. Become. For example, in pure water that has not been deaerated, oxygen of about 9 ppm (saturated concentration, 25 degrees, 1 atm) is dissolved, and the transmittance is 89.5% / cm for an ArF excimer laser. Then, deaeration treatment is performed, and pure water having a dissolved oxygen content of about 1.0 ppm has a transmittance of 92.4% / cm with respect to the ArF excimer laser.

  However, if the pipe for supplying the immersion liquid becomes long or there is a joint, oxygen will be dissolved before the immersion liquid is supplied to the gap, and the transmittance of the exposure light will be reduced. Pattern accuracy to be unstable.

  Since the exposure apparatus using conventional immersion exposure as proposed in Patent Documents 1 to 3 uses a single piping system without considering the material and form of the piping and joints for supplying the immersion liquid, The problem as described above could not be prevented. In general, pure water used in the semiconductor manufacturing process is subjected to temperature control and deaeration processing in factory equipment and supplied to the exposure apparatus. The supply system for supplying pure water to the exposure apparatus is described above. No measures have been taken to prevent such problems.

  Accordingly, the present invention provides an exposure apparatus, an exposure system, and a device manufacturing method that improve the reliability of the immersion liquid (for example, the amount of dissolved gas, temperature, transmittance, etc.) and prevent the transfer pattern from deteriorating. For illustrative purposes.

  In order to achieve the above object, an exposure apparatus according to one aspect of the present invention is an exposure apparatus that exposes a reticle pattern onto an object to be processed via a projection optical system, the projection optical system and the object to be processed A liquid supply unit configured to supply a liquid to the body, the liquid supply unit including a first pipe through which the liquid flows, and a second pipe disposed so as to surround the first pipe It has the supply piping of the double piping structure which has these.

  An exposure system according to another aspect of the present invention includes a projection optical system that projects a reticle pattern onto a target object, and the liquid is supplied between the projection optical system and the target object via the liquid. 1st supply of the double piping structure which has exposure apparatus which exposes a to-be-processed object, 1st piping for the said liquid to flow, and 2nd piping arrange | positioned so that the said 1st piping may be enclosed And a liquid supply apparatus that supplies the liquid to the exposure apparatus via the first supply pipe.

  According to still another aspect of the present invention, a supply pipe includes a projection optical system that projects a reticle pattern onto an object to be processed, and a liquid supplied between the projection optical system and the object to be processed. A supply pipe for supplying the liquid to an exposure apparatus that exposes the object to be processed; a first pipe through which the liquid flows; and a second pipe disposed so as to surround the first pipe And a pipe.

  According to still another aspect of the present invention, there is provided a device manufacturing method comprising: exposing a target object using the exposure apparatus or exposure system described above; and developing the exposed target object. And

  Further objects and other features of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

  According to the present invention, it is possible to provide an exposure apparatus, an exposure system, and a device manufacturing method that improve the reliability of an immersion liquid (for example, the amount of dissolved gas, temperature, transmittance, etc.) and prevent deterioration of a transferred pattern. it can.

  Hereinafter, an exposure apparatus according to one aspect of the present invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member and the overlapping description is abbreviate | omitted. Here, FIG. 1 is a schematic sectional view showing the structure of the exposure apparatus 1 of the present invention.

  The exposure apparatus 1 is applied to the reticle 20 via a liquid (immersion liquid) LW supplied between the final surface (final optical element) on the processing target 40 side of the projection optical system 30 and the processing target 40. This is an immersion type projection exposure apparatus that exposes the formed circuit pattern onto the workpiece 40 by a step-and-scan method or a step-and-repeat method. Such an exposure apparatus is suitable for a lithography process of submicron or quarter micron or less, and in the present embodiment, a step-and-scan type exposure apparatus (also referred to as “scanner”) will be described below as an example. Here, the “step and scan method” means that the wafer is continuously scanned (scanned) with respect to the reticle to expose the reticle pattern onto the wafer, and the wafer is stepped after completion of one shot of exposure. The exposure method moves to the next exposure area. The “step-and-repeat method” is an exposure method in which the wafer is stepped and moved to the next exposure area for every batch exposure of the wafer.

  As shown in FIG. 1, the exposure apparatus 1 includes an illumination apparatus 10, a reticle stage 25 on which the reticle 20 is placed, a projection optical system 30, a wafer stage 45 on which the object to be processed 40 is placed, and a distance measuring unit. 50, a stage control unit 60, a liquid supply unit 70, a gas supply unit 80, a liquid recovery unit 90, and an immersion control unit 100.

  The illumination device 10 illuminates a reticle 20 on which a transfer circuit pattern is formed, and includes a light source unit 12 and an illumination optical system 14.

In the present embodiment, the light source unit 12 uses an ArF excimer laser having a wavelength of 193 nm as a light source. However, the light source unit 12 is not limited to an ArF excimer laser. For example, a KrF excimer laser having a wavelength of about 248 nm or an F ₂ laser having a wavelength of about 157 nm may be used, and the number of light sources is not limited. The light source that can be used for the light source unit 12 is not limited to the laser, and one or a plurality of lamps such as a mercury lamp and a xenon lamp can be used.

  The illumination optical system 14 is an optical system that illuminates the reticle 20, and includes a lens, a mirror, an optical integrator, a stop, and the like. For example, a condenser lens, a fly-eye lens, an aperture stop, a condenser lens, a slit, and an imaging optical system are arranged in this order. The optical integrator includes an integrator configured by stacking a fly-eye lens and two sets of cylindrical lens array (or lenticular lens) plates, but may be replaced by an optical rod or a diffractive element.

  The reticle 20 is transported from outside the exposure apparatus 1 by a reticle transport system (not shown), and is supported and driven by the reticle stage 25. The reticle 20 is made of, for example, quartz, and a circuit pattern to be transferred is formed thereon. Diffracted light emitted from the reticle 20 passes through the projection optical system 30 and is projected onto the object to be processed 40. The reticle 20 and the workpiece 40 are arranged in an optically conjugate relationship. Since the exposure apparatus 1 is a scanner, the pattern of the reticle 20 is transferred onto the object to be processed 40 by scanning the reticle 20 and the object to be processed 40 at the speed ratio of the reduction magnification ratio. In the case of a step-and-repeat type exposure apparatus (also called “stepper”), exposure is performed with the reticle 20 and the object to be processed 40 being stationary.

  The reticle stage 25 is attached to a surface plate (not shown). The reticle stage 25 supports the reticle 20 via a reticle chuck and is controlled to move by a moving mechanism and stage control unit 60 (not shown). A moving mechanism (not shown) is constituted by a linear motor or the like, and can move the reticle 20 by driving the reticle stage 25 in the X-axis direction.

  The projection optical system 30 has a function of forming an image of the diffracted light that has passed through the pattern formed on the reticle 20 on the workpiece 40. The projection optical system 30 includes an optical system including only a plurality of lens elements, an optical system (catadioptric optical system) having a plurality of lens elements and at least one concave mirror, a plurality of lens elements, and at least one kinoform. An optical system having a diffractive optical element such as can be used. When correction of chromatic aberration is required, a plurality of lens elements made of glass materials having different dispersion values (Abbe values) can be used, or the diffractive optical element can be configured to generate dispersion in the opposite direction to the lens element. To do.

  The workpiece 40 is transported from the outside of the exposure apparatus 1 by a wafer transport system (not shown), and is supported and driven by the wafer stage 45. The object to be processed 40 is a wafer in this embodiment, but widely includes a liquid crystal substrate and other objects to be processed. A photoresist is applied to the object to be processed 40.

  The wafer stage 45 supports the workpiece 40 via a wafer chuck. The wafer stage 45 has a function of adjusting the position, rotation direction, and tilt of the workpiece 40 in the vertical direction (vertical direction), and is controlled by the stage controller 60. During exposure, the stage controller 60 controls the wafer stage 45 so that the surface of the object to be processed 40 always matches the focal plane of the projection optical system 30 with high accuracy.

  The distance measuring means 50 measures the position of the reticle stage 25 and the two-dimensional position of the wafer stage 45 in real time via reference mirrors 52 and 54 and laser interferometers 56 and 58. The distance measurement result by the distance measuring means 50 is transmitted to the stage control unit 60, and the reticle stage 25 and the wafer stage 45 are driven at a constant speed ratio under the control of the stage control unit 60 for positioning and synchronization control. Is done.

  The stage control unit 60 performs drive control of the reticle stage 25 and the wafer stage 45.

  The liquid supply unit 70 has a function of supplying the liquid LW to the space or gap between the projection optical system 30 and the object to be processed 40, and in this embodiment, a generation unit (not shown) and a deaeration unit 72. And a temperature control means 74 and a supply pipe 700. In other words, the liquid supply unit 70 supplies the liquid LW via the supply pipe 700 (the supply port 700a thereof) disposed around the final surface of the projection optical system 30, and the projection optical system 30 and the object to be processed 40 are supplied. A liquid film of liquid LW is formed in the space between the two. The space between the projection optical system 30 and the object to be processed 40 is preferably such that the liquid film of the liquid LW can be stably formed and removed, for example, 1.0 mm.

  The liquid LW has a function of shortening an equivalent exposure wavelength of exposure light from the light source unit 12 and improving resolution in exposure. In this embodiment, pure water is used as the liquid LW. However, the liquid LW is not particularly limited to pure water, and has a high transmission characteristic and a high refractive index characteristic with respect to the wavelength of the exposure light, and is a photo applied to the projection optical system 30 and the object to be processed 40. A liquid having high chemical stability can be used for the resist and the final surface of the projection optical system 30. For example, water containing a fluorinated inert liquid or a small amount of additives may be used.

  The generating means reduces impurities such as metal ions, fine particles, and organic matter contained in raw water supplied from a raw water supply source (not shown), and generates liquid LW. The liquid LW generated by the generation unit is supplied to the deaeration unit 72.

  The degassing unit 72 performs a degassing process on the liquid LW to reduce dissolved oxygen and dissolved nitrogen in the liquid LW. The deaeration means 72 is constituted by, for example, a membrane module and a vacuum pump. The degassing means 72 preferably has a degassing performance of 50% or more with respect to the saturated oxygen state (about 9 ppm) and the dissolved nitrogen saturation state (about 14 ppm) in the liquid LW. In other words, the deaeration means 72 makes the amount of dissolved oxygen dissolved in the liquid LW 4.5 ppm or less and the amount of dissolved nitrogen 7 ppm or less.

  The temperature control means 74 has a function of controlling the liquid LW to a predetermined temperature. For example, the temperature control unit 74 sets the temperature of the liquid LW to 23 ° C.

  The supply pipe 700 supplies the liquid LW, which has been deaerated and temperature-controlled by the deaeration unit 72 and the temperature control unit 74, to the space between the projection optical system 30 and the object to be processed 40 via the supply port 700a. Supply. As shown in FIG. 2, the supply pipe 700 has a double pipe structure 710 having a first pipe 712 and a second pipe 714. In addition, a joint 720 is provided in the first pipe 712. Here, FIG. 2 is a diagram showing a detailed structure of the supply pipe 700, FIG. 2A is a schematic sectional view of the supply pipe 700, and FIG. 2B is a schematic plan view of the supply pipe 700. .

  As shown well in FIG. 2, the supply pipe 700 is configured such that the first pipe 712 is disposed on the inner side and the second pipe 714 is disposed on the outer side so as to surround the first pipe 712. The liquid LW that has been subjected to deaeration processing and temperature control flows through the first pipe 712. A predetermined gas PG supplied from a gas supply unit 80 described later flows through the second pipe 714. As described above, the supply pipe 700 for supplying the liquid LW to the space between the projection optical system 30 and the object to be processed 40 has the double pipe structure 710, so that the first pipe 712 is placed in the external environment. Touching can be prevented. In other words, the liquid LW is blocked from the environment outside the supply pipe 700 by the second pipe 714 and the gas PG flowing through the second pipe 714. Therefore, it becomes possible to prevent external gas (especially oxygen) from dissolving in the liquid LW (that is, to maintain the dissolved gas amount of the liquid LW subjected to the degassing process), and in the liquid LW Generation of bubbles and a decrease in the transmittance of exposure light can be prevented, and deterioration of the exposed pattern can be prevented.

  The first pipe 712 is preferably made of a resin such as a Teflon resin, a polyethylene resin, or a polypropylene resin with a small amount of eluted substances so as not to contaminate the liquid LW. When a liquid other than pure water is used as the liquid LW, the first pipe 712 may be configured with a material that is resistant to the liquid LW and has a small amount of eluted substances. The second pipe 714 is made of various resins and metals such as stainless steel in order to prevent the first pipe 712 from coming into contact with the external environment.

  The gas supply unit 80 is connected to the liquid supply unit 70 (supply pipe 700 thereof) and has a function of supplying a predetermined gas PG to the second pipe 714. The predetermined gas PG flowing through the second pipe 714 protects the liquid LW from the external environment and prevents the external gas from being dissolved in the liquid LW. The gas supply unit 80 supplies an inert gas such as nitrogen, helium, neon, argon, or hydrogen as the predetermined gas PG. Thereby, oxygen which has a large influence on exposure can be blocked. Moreover, even if the predetermined gas PG is dissolved in the liquid LW, the influence on exposure can be reduced, and deterioration of the exposed pattern can be prevented.

  For example, when the gas supply unit 80 supplies nitrogen (1 atm, saturated solubility at 25 degrees to 18 ppm) to the second pipe 714, the dissolved gas concentration of the liquid LW is saturated from the viewpoint of removing bubbles of the liquid LW. Therefore, it is preferable to supply at about 9 ppm or less. The same applies to the case where the gas supply unit 80 supplies a gas other than nitrogen.

  The gas supply unit 80 includes a temperature adjustment unit 82. The temperature adjustment unit 82 adjusts the temperature of the predetermined gas PG supplied to the second pipe 114. Specifically, the temperature adjustment unit 82 adjusts the temperature of the predetermined gas PG to be approximately the same as the temperature of the liquid LW flowing through the first pipe 112. Thereby, the influence which the liquid LW which flows through the 1st piping 112 receives from external temperature can be reduced, the temperature fluctuation of the liquid LW can be prevented, and the deterioration of the exposed pattern can be prevented.

  The liquid recovery unit 90 recovers the liquid LW supplied between the final surface of the projection optical system 30 and the object to be processed 40 via the recovery pipe 92. Note that the recovery pipe 92 does not need to have the double pipe structure 710 unlike the supply pipe 700. The liquid recovery unit 90 includes, for example, a tank that temporarily stores the recovered liquid LW, a suction unit that sucks out the liquid LW, and the like.

  The liquid immersion control unit 100 acquires information such as the current position, speed, acceleration, target position, and moving direction of the wafer stage 45 from the stage control unit 60, and performs control related to liquid immersion exposure based on the information. . The liquid immersion control unit 100 gives the liquid supply unit 70 and the liquid recovery unit 90 a control command such as switching, stopping, supplying, and recovering the amount of the liquid LW to be supplied and recovered.

  In the exposure apparatus 1, the supply pipe 700 for supplying the liquid LW between the projection optical system 30 and the workpiece 40 has a double pipe structure 710, and the liquid LW flows through the second pipe 714. The first pipe 712 is not exposed to the external environment. Thereby, it can prevent that external gas melt | dissolves in the liquid LW, and the dissolved gas amount of the liquid LW deaerated by the deaeration means 72 can be maintained. Therefore, the exposure apparatus 1 can exhibit excellent exposure performance without suppressing the generation of bubbles in the liquid LW and without reducing the transmittance of the liquid LW. Further, the exposure apparatus 1 includes a gas supply unit 80 and a temperature adjustment unit 82, and the liquid LW flowing through the first pipe 714 is caused to flow through the second pipe 714 by flowing a predetermined gas PG whose temperature is adjusted. It can be prevented from being influenced by external temperature. Thereby, it is possible to suppress the temperature fluctuation of the liquid LW (maintain the temperature of the liquid LW constant). Therefore, the exposure apparatus 1 can maintain excellent refractive index while maintaining the refractive index of the liquid LW constant.

  In the exposure, the light beam emitted from the light source unit 12 illuminates the reticle 20 by the illumination optical system 14, for example, Koehler illumination. The light that passes through the reticle 20 and reflects the reticle pattern is imaged by the projection optical system 30 onto the object 40 via the liquid LW. The liquid LW used by the exposure apparatus 1 is highly reliable because the amount of dissolved gas dissolved in the liquid LW and the temperature of the liquid LW are maintained constant by the supply pipe 700. Therefore, the exposure apparatus 1 can prevent the deterioration of the exposed pattern due to the liquid LW, and can project and expose the pattern of the reticle 20 with an extremely high resolution.

  In general, in a semiconductor element manufacturing factory (exposure system), a pure water apparatus is provided as factory equipment, and a degassing apparatus and a temperature control apparatus are incorporated in the pure water apparatus. In the case where pure water subjected to deaeration and temperature adjustment is supplied from the external liquid supply apparatus (pure water apparatus) 200 to the exposure apparatus 1 as shown in FIG. 3, the deaeration means 72 of the liquid supply unit 70 is provided. The temperature control means 74 may not be installed. Thereby, the cost of the deaeration means 72 and the temperature control means 74 can be reduced. However, the supply pipe 700 is necessary, and the conditions necessary for the liquid LW are the same. Here, FIG. 3 is a schematic sectional view showing a configuration of the exposure apparatus 1 in which the deaeration unit 72 and the temperature control unit 74 are omitted.

  Similarly, in a semiconductor element manufacturing factory (exposure system), a gas supply device is provided as factory equipment, and a temperature adjusting device is incorporated in the gas supply device. When supplying a predetermined gas PG, the temperature of which has been adjusted, from such an external gas supply device 300 to the exposure apparatus 1, it is not necessary to install the gas supply unit 80 as shown in FIG. In FIG. 4, the liquid LW is supplied from the external liquid supply apparatus 200 to the exposure apparatus 1. Note that the above-described configuration of the supply pipe 700 is preferably applied to the supply pipe 400 that supplies the liquid LW and the predetermined gas PG from the external liquid supply apparatus 200 and the gas supply apparatus 300 to the exposure apparatus 1. Thereby, while the liquid LW and the predetermined gas PG are supplied from the liquid supply apparatus 200 and the gas supply apparatus 300 to the exposure apparatus 1, the gas is dissolved in the liquid LW and the temperature of the liquid changes. Can be prevented. Here, FIG. 4 is a schematic cross-sectional view showing the configuration of the exposure system when the liquid LW and the predetermined gas PG are supplied to the exposure apparatus 1 from the outside.

  Next, an embodiment of a device manufacturing method using the above-described exposure apparatus 1 will be described with reference to FIGS. FIG. 5 is a flowchart for explaining how to fabricate devices (ie, semiconductor chips such as IC and LSI, LCDs, CCDs, etc.). Here, the manufacture of a semiconductor chip will be described as an example. In step 1 (circuit design), a device circuit is designed. In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced. In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by the lithography technique of the present invention using the mask and the wafer. Step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer created in step 4. The assembly process (dicing, bonding), packaging process (chip encapsulation), and the like are performed. Including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 6 is a detailed flowchart of the wafer process in Step 4. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition or the like. Step 14 (ion implantation) implants ions into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the exposure apparatus 1 to expose a circuit pattern on the mask onto the wafer. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer. According to this device manufacturing method, it is possible to manufacture a higher quality device than before. Thus, the device manufacturing method using the exposure apparatus 1 and the resulting device also constitute one aspect of the present invention.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist.

It is a schematic sectional drawing which shows the structure of the exposure apparatus as one side surface of this invention. 2A and 2B are diagrams illustrating a detailed structure of the supply pipe shown in FIG. 1, in which FIG. 2A is a schematic cross-sectional view of the supply pipe, and FIG. 2B is a schematic plan view of the supply pipe. It is a schematic sectional drawing which shows the structure of the exposure apparatus which abbreviate | omitted the deaeration means and temperature control means shown in FIG. It is a schematic sectional drawing which shows the structure of the exposure system in the case of supplying a liquid and predetermined gas from the outside to the exposure apparatus shown in FIG. It is a flowchart for demonstrating manufacture of devices (semiconductor chips, such as IC and LSI, LCD, CCD, etc.). 6 is a detailed flowchart of the wafer process in Step 4 shown in FIG. 5.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Exposure apparatus 20 Reticle 30 Projection optical system 40 To-be-processed object 70 Liquid supply part 700 Supply piping 710 Double piping structure 712 1st piping 714 2nd piping 80 Gas supply part 82 Temperature adjustment part 200 Liquid supply apparatus 300 Gas supply Device 400 Supply pipe LW Liquid (immersion liquid)
PG gas

Claims (10)

An exposure apparatus that exposes a reticle pattern onto an object to be processed via a projection optical system,
A liquid supply unit for supplying a liquid between the projection optical system and the object to be processed;
The liquid supply unit supplies a double pipe structure having a first pipe through which the liquid flows and a second pipe through which a predetermined gas flows so as to surround the first pipe. An exposure apparatus having a pipe.   The exposure apparatus according to claim 1, further comprising a gas supply unit that supplies the predetermined gas to the second pipe.   3. The exposure apparatus according to claim 2, wherein the predetermined gas is any one of nitrogen, helium, neon, argon, hydrogen, or a plurality thereof.   The exposure apparatus according to claim 2, further comprising a temperature adjusting unit that adjusts a temperature of the predetermined gas. The first pipe is made of resin,
The exposure apparatus according to claim 1, wherein the second pipe is made of resin or metal. An exposure apparatus that has a projection optical system that projects a reticle pattern onto the object to be processed, and that exposes the object to be processed via a liquid supplied between the projection optical system and the object to be processed;
A first supply pipe having a double pipe structure having a first pipe for flowing the liquid and a second pipe for flowing a predetermined gas arranged so as to surround the first pipe. An exposure system comprising: a liquid supply device that supplies the liquid to the exposure device via the first supply pipe. The exposure apparatus has a second pipe structure having a third pipe for flowing the liquid and a fourth pipe for flowing a predetermined gas arranged so as to surround the third pipe. Supply piping,
The exposure system according to claim 6, wherein the liquid supplied from the liquid supply device is supplied between the projection optical system and the object to be processed through the second supply pipe. A projection optical system that projects a reticle pattern onto the object to be processed; and the liquid is applied to an exposure apparatus that exposes the object to be processed through the liquid supplied between the projection optical system and the object to be processed. Supply piping for supplying,
A first pipe through which the liquid flows;
Supply piping characterized by having 2nd piping for predetermined gas arranged so that said 1st piping may be surrounded. Exposing the object to be processed using the exposure apparatus according to claim 1;
And developing the exposed object to be processed. Exposing the object to be processed using the exposure system according to claim 6 or 7,
And developing the exposed object to be processed.