JP2007184336A - Exposure apparatus and method for manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a novel technology for reducing drop of temperature of a nozzle. <P>SOLUTION: The exposure apparatus for projecting an original pattern on a substrate comprises: a projected optical system for projecting the pattern on the substrate; a spply means, which has a supply port arranged at the external circumference of a space formed with the substrate of the projected optical system and an end surface opposing to the substrate, for supplying liquid to the area between the last surface of the space and the substrate through the supply port; and a collecting means, which has a collecting port arranged between the last surface at the circumference of the last surface and the supply port, for collecting the liquid supplied between the last surface and the substrate with the supply means through the collecting port. The exposure apparatus is characterized in that a flow rate of the liquid supplied from the supply port and the liquid collected from the collecting port are made substantially equal. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention generally relates to an exposure apparatus, and more particularly to an exposure apparatus that exposes an object to be processed such as a single crystal substrate for a semiconductor wafer and a glass substrate for a liquid crystal display (LCD). The present invention is suitable for a so-called immersion exposure apparatus that immerses the final surface of the projection optical system and the surface of the object to be processed in a liquid and exposes the object to be processed through the liquid.

  Conventionally, projection exposure apparatuses have been used for manufacturing semiconductor devices such as ICs and LSIs, imaging devices such as CCDs, display devices such as liquid crystal panels, and fine semiconductor devices such as magnetic heads using photolithography technology. Has been used from. The projection exposure apparatus transfers a pattern formed on a reticle (mask) to an object to be processed such as a wafer via a projection optical system.

  The minimum dimension (resolution) that can be transferred by the projection exposure apparatus is proportional to the wavelength of light used for exposure and inversely proportional to the numerical aperture (NA) of the projection optical system. Therefore, the shorter the wavelength and the higher the NA, the better the resolution. For this reason, the wavelength of the ultraviolet light used from the KrF excimer laser (wavelength of about 248 nm) to the ArF excimer laser (wavelength of about 193 nm) has been reduced with the recent demand for miniaturization of semiconductor devices. It's getting shorter. Currently, development is proceeding toward realization of F2 laser (wavelength of about 157 nm) and extreme ultraviolet (EUV) light as the next light source.

Under such circumstances, immersion exposure has attracted attention as a technique for further improving the resolution while using a light source such as an ArF excimer laser.
In immersion exposure, the effective wavelength of exposure light is shortened by filling the space between the final surface of the projection optical system and the image plane of the wafer with a liquid (that is, the medium on the wafer side of the projection optical system is liquid). The resolution is improved by apparently increasing the NA of the projection optical system. The NA of the projection optical system is NA = n · sin θ, where n is the refractive index of the medium, and therefore NA is increased to n by satisfying a medium having a refractive index higher than the refractive index of air (n> 1). can do. For example, when pure water (refractive index n = 1.44) is used as the liquid and the maximum incident angle of the light beam imaged on the wafer is the same between the immersion exposure and the conventional exposure, a light source having the same wavelength may be used. In the immersion exposure, a resolution of 1.44 times that of the conventional exposure can be obtained. This is equivalent to increasing the NA of the projection optical system by 1.44 times in the conventional exposure, and the immersion exposure can obtain a resolution of NA = 1 or higher, which is impossible with the conventional exposure.

  In the immersion exposure, there are roughly two methods for filling the liquid between the final surface of the projection optical system and the wafer. The first method is a method in which the final surface of the projection optical system and the entire wafer are arranged in a liquid bath. The second method is a local fill method in which a liquid is allowed to flow only in the space between the final surface of the projection optical system and the wafer surface (see, for example, Patent Document 1). In addition, the local fill method which can keep the liquid immersion area small is relatively mainstream since the change from the conventional exposure is relatively small.

FIG. 15 is a schematic cross-sectional view showing a configuration of a conventional immersion exposure apparatus disclosed in Patent Document 1. In FIG. In the conventional immersion exposure apparatus, a supply port SPP for supplying the liquid LQ to the space ASP between the final surface FSF of the projection optical system POS and the wafer surface WSF, and a recovery port RCP for recovering the liquid LQ from the space ASP, However, the exposure area is arranged in the vicinity of the projection optical system POS. The conventional immersion exposure apparatus supplies and recovers the liquid LQ via the supply port SPP and the recovery port RCP, so that the space ASP between the final surface FSF of the projection optical system POS and the wafer surface WSF is the liquid LQ. Fulfill.
International Publication No. 99/49504 Pamphlet

  When recovering liquid from the space between the final surface of the projection optical system and the wafer surface, in order to prevent the liquid from flowing around the wafer, the liquid recovery connected via the recovery port and the recovery pipe It is necessary to increase the recovery capability of the apparatus, and simultaneously recover air as well as liquid. However, when the liquid and air are collected at the same time, the collection port and the collection pipe are in a gas-liquid mixed state, so that the vaporization of the collected liquid is promoted. For this reason, heat of vaporization is generated when the liquid is vaporized, and heat is taken away from the surroundings of the recovery port and the recovery pipe, and the temperature of the recovery port and the recovery pipe is lowered. In addition, a temperature drop at the recovery port affects the supply port to cause a temperature drop at the supply port, and a temperature drop of the supplied liquid has also occurred.

  In an immersion exposure apparatus to which the local fill method is applied, the supply port, the recovery port, and the recovery pipe are arranged in the vicinity of the projection optical system. The temperature of the various members which comprise will fall. As a result, a change in the refractive index of the gas between the lenses constituting the projection optical system, a contraction of the lens, a change in the refractive index of the lens, an aberration of the lens barrel, and the like occur, leading to deterioration of the optical performance of the projection optical system. It was. Further, the refractive index of the liquid also changes due to a decrease in the temperature of the supplied liquid, causing further deterioration in the optical performance of the projection optical system. For example, when a reticle pattern is projected onto a wafer, the image plane of the projection image (best focus plane) is shifted to the position in the optical axis direction (focus position) of the projection optical system, and the wafer surface is imaged. Defocusing out of the plane occurs. For this reason, the manufactured semiconductor device has many defective products, and the productivity is deteriorated.

  In particular, when pure water is used as the liquid, the vaporization heat of pure water is as large as 586 cal / g (1 atm, 20 ° C.), so the temperature of the recovery port for recovering pure water and gas and the temperature of the supply port for supplying pure water Will drop significantly. The temperature drop when pure water is used depends on the flow rate of flowing pure water, the volume of the recovery port, and the like, but in the largest case, the temperature decrease of about 1 ° C. is predicted. Therefore, the optical performance of the projection optical system is greatly deteriorated, and the productivity of the apparatus is remarkably deteriorated.

  In the step-and-repeat type exposure apparatus, liquid is dragged to the wafer by the effect of viscosity during the step operation or scanning operation of the wafer stage. As a result, the liquid may jump out of the supply port and remain with the liquid adhering to the wafer stage or its periphery. If the liquid remains on the wafer stage and its periphery, the remaining liquid evaporates to change the temperature of the wafer stage and its periphery, resulting in problems such as deterioration in the positioning accuracy of the wafer stage. Further, the temperature around the remaining liquid is lowered due to the heat of vaporization due to evaporation of the remaining liquid, and a local temperature distribution is generated around the wafer stage and its surroundings. Such a temperature distribution also causes inconveniences such as deterioration of the positioning accuracy of the wafer stage.

  Accordingly, an object of the present invention is to provide a novel technique for reducing the temperature drop of the nozzle.

  In order to achieve the above object, an exposure apparatus according to one aspect of the present invention is an exposure apparatus that projects an original pattern onto a substrate, the projection optical system for projecting the pattern onto the substrate, and the projection A supply port arranged on an outer periphery of a space portion constituted by an end surface facing the substrate of the optical system, and supplying liquid to the eating trunk portion between the final surface and the substrate via the supply port; A supply means, and a recovery port disposed between the final surface and the supply port around the final surface, and the liquid supplied between the final surface and the substrate by the supply means, A recovery means for recovering via the recovery port, wherein the flow rate of the liquid supplied from the supply port is substantially equal to the flow rate of the liquid recovered from the recovery port. And

  An exposure apparatus according to another aspect of the present invention is an exposure apparatus that projects an original pattern onto a substrate, the projection optical system for projecting the pattern onto the substrate, and the periphery of the final surface of the projection optical system A supply means for supplying a liquid via the supply port between the final surface and the substrate; and a second means disposed outside the supply port around the final surface. A recovery means for recovering the liquid supplied between the final surface and the substrate by the supply means via the first recovery port; and And reducing means for reducing a decrease in ambient temperature.

  According to still another aspect of the present invention, there is provided a device manufacturing method including an exposure step of projecting an original pattern onto a substrate using the exposure apparatus described above.

  Further objects and other features of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

  ADVANTAGE OF THE INVENTION According to this invention, the novel technique which reduces the temperature fall of a nozzle can be provided.

  Hereinafter, an exposure apparatus according to one aspect of the present invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member and the overlapping description is abbreviate | omitted. Here, FIG. 1 is a schematic sectional view showing the structure of the exposure apparatus 1 of the present invention.

  The exposure apparatus 1 is formed on the reticle 20 via the liquid LQ supplied to the space SP between the final surface of the projection optical system 30 (that is, the optical element 32 arranged closest to the object to be processed 40). This is an immersion type exposure apparatus that exposes the processed circuit pattern to the object to be processed 40. The exposure apparatus 1 exposes the workpiece 40 by a step-and-scan method or a step-and-repeat method. Such an exposure apparatus is suitable for a lithography process of submicron or quarter micron or less, and in the present embodiment, a step-and-scan exposure apparatus (also referred to as a “scanner”) will be described as an example. Here, the “step and scan method” means that the wafer is continuously scanned (scanned) with respect to the reticle to expose the reticle pattern onto the wafer, and the wafer is stepped after completion of one shot of exposure. The exposure method moves to the next exposure area. The “step-and-repeat method” is an exposure method in which the wafer is stepped and moved to the next exposure area for every batch exposure of the wafer.

  As shown in FIG. 1, the exposure apparatus 1 includes an illumination apparatus 10, a reticle stage 25 on which the reticle 20 is placed, a projection optical system 30, a wafer stage 45 on which the workpiece 40 is placed, and a liquid recovery apparatus. 60, a liquid recovery apparatus 70, a nozzle 80, and a control unit 90. Further, the exposure apparatus 1 has a distance measuring means including an X direction measuring mirror 52, an X direction laser interferometer 54, a Y direction measuring mirror 56, a Y direction laser interferometer 58, and the like.

  The exposure apparatus 1 is disposed in an environmental chamber (not shown), and the environment surrounding the exposure apparatus 1 is maintained at a predetermined temperature. In the space surrounding the reticle stage 25, the wafer stage 45, the X direction laser interferometer 54 and the Y direction laser interferometer 58 and the space surrounding the projection optical system 30, temperature-controlled conditioned air is blown to further increase the environmental temperature. High accuracy is maintained.

  The illumination device 10 illuminates a reticle 20 on which a transfer circuit pattern is formed, and includes a light source unit 12 and an illumination optical system 14.

  For the light source unit 12, for example, an ArF excimer laser having a wavelength of about 193 nm, a KrF excimer laser having a wavelength of about 248 nm, or the like can be used as the light source. However, the type of light source is not limited to the excimer laser, and for example, an F2 laser having a wavelength of about 157 nm may be used, and the number of light sources is not limited. The light source that can be used for the light source unit 12 is not limited to a laser, and one or a plurality of lamps such as a mercury lamp and a xenon lamp can be used.

  The illumination optical system 14 is an optical system that illuminates the reticle 20, and for example, shapes the light emitted from the light source unit 12 into slit light (light having a cross-sectional shape that passes through the slit). The illumination optical system 14 includes a lens, a mirror, an optical integrator, a stop, and the like. For example, a condenser lens, an optical integrator, an aperture stop, a condenser lens, a slit, and an imaging optical system are arranged in this order. The optical integrator includes an integrator configured by stacking a fly-eye lens and two sets of cylindrical lens array (or lenticular lens) plates, but may be replaced by an optical rod or a diffractive element.

  The reticle 20 is made of, for example, quartz, on which a circuit pattern to be transferred is formed, and is supported and driven by the reticle stage 25. Diffracted light emitted from the reticle 20 passes through the projection optical system 30 and is projected onto the object to be processed 40. The reticle 20 and the workpiece 40 are arranged in an optically conjugate relationship. Since the exposure apparatus 1 is a scanner, the pattern of the reticle 20 is transferred onto the object to be processed 40 by scanning the reticle 20 and the object to be processed 40 at the speed ratio of the reduction magnification ratio. In the case of a step-and-repeat type exposure apparatus (also called “stepper”), exposure is performed with the reticle 20 and the object to be processed 40 being stationary.

  The reticle stage 25 supports the reticle 20 via a reticle chuck (not shown) and is connected to a moving mechanism (not shown). A moving mechanism (not shown) is configured by a linear motor or the like, and can move the reticle 20 by driving the reticle stage 25 in the X-axis direction, the Y-axis direction, the Z-axis direction, and the rotation direction of each axis.

  The projection optical system 30 projects (images) the diffracted light that has passed through the pattern of the reticle 20 onto the object to be processed 40. As the projection optical system 30, an optical system composed of only a plurality of lens elements, an optical system (catadioptric optical system) having a plurality of lens elements and at least one concave mirror, or the like can be used. When correction of chromatic aberration is required, a plurality of lens elements made of glass materials having different dispersion values (Abbe values) can be used, or the diffractive optical element can be configured to generate dispersion in the opposite direction to the lens element. To do.

  In this embodiment, the projection optical system 30 is composed of a plurality of optical elements (lenses). These optical elements are held by a metal member, for example, a lens barrel 38 (inside) made of stainless steel. An optical element 32 is disposed on the final surface (tip portion) 30 a of the projection optical system 30. The final surface 30 a of the projection optical system 4 is constituted by the optical element 32 and a part of the lens barrel 38 that holds the optical element 32, and the lower surface 32 a of the optical element 32 and the lower surface 38 a of the lens barrel 38 that holds the optical element 32 are Form the same plane.

  The object to be processed 40 is a wafer in this embodiment, but widely includes a liquid crystal substrate and other objects to be processed. A photoresist is applied to the object to be processed 40.

  The wafer stage 45 supports the workpiece 40 by a wafer chuck (not shown). Similar to the reticle stage 25, the wafer stage 45 uses the linear motor to move the workpiece 40 in the X-axis direction, the Y-axis direction, the Z-axis direction, and the rotation direction of each axis. The wafer stage 45 is provided, for example, on a stage surface plate SMP supported on a floor or the like via a damper. The reticle stage 25 and the projection optical system 30 are provided on a lens barrel surface plate (not shown) supported via a damper on a base frame placed on a floor or the like, for example.

  As shown in FIG. 1, the X-direction measuring mirror 52 is provided on the wafer stage 45 and measures the position of the wafer stage 45 in the X-axis direction in cooperation with the X-direction laser interferometer 54. Similarly, in the Y-axis direction, the Y-direction measuring mirror 56 is provided on the wafer stage 45 as shown in FIG. 2, and cooperates with the Y-direction laser interferometer 58 to position the wafer stage 45 in the Y-axis direction. measure. Similarly, the reticle stage 25 is also provided with a length measuring mirror (not shown) on the reticle stage 25, and measures the position of the reticle stage 25 in cooperation with a laser interferometer (not shown). Here, FIG. 2 is a schematic plan view of the exposure apparatus 1 as viewed from above the optical element 32 of the projection optical system 30.

  The position of the reticle stage 25 and the position of the wafer stage 45 are measured in real time, and the positioning and synchronization control of the reticle 20 (reticle stage 25) and the object to be processed 40 (wafer stage 45) are controlled based on the measured values.

  As described above, the wafer stage 45 is connected to a moving mechanism that adjusts, changes, or controls the position, rotation direction, and tilt of the workpiece 40 in the vertical direction (vertical direction). Such a moving mechanism drives the wafer stage 45 so that the exposure area on the object to be processed 40 always coincides with the focal plane of the projection optical system 30 with high accuracy during exposure. Here, the position of the surface of the object to be processed 40 (position and inclination in the vertical direction) is measured by an optical focus sensor (not shown).

  The liquid supply device 60 supplies the liquid LQ to the space SP between the optical element 32 of the projection optical system 30 and the object to be processed 40. The liquid supply device 60 includes, for example, a tank that stores the liquid LQ, a pressure feeding device that sends out the liquid LQ, a flow rate adjusting device that adjusts the supply flow rate of the liquid LQ, or a flow rate control device that controls the supply flow rate of the liquid LQ. The liquid supply device 60 preferably further includes a temperature control device that controls the supply temperature of the liquid LQ.

  The liquid LQ has a function of shortening the equivalent exposure wavelength of the exposure light from the light source unit 12 and improving the resolution in exposure. The liquid LQ is selected from those that absorb less exposure light, and it is desirable that the liquid LQ has a refractive index substantially the same as that of a refractive optical element (lens) such as quartz or fluorite. Specifically, the liquid LQ is pure water, functional water, fluorinated liquid (for example, fluorocarbon), or the like. It is preferable to sufficiently remove the dissolved gas from the liquid LQ in advance using a degassing device (not shown). Thereby, the generation of bubbles is suppressed, and even if bubbles are generated, they can be immediately absorbed into the liquid. For example, if nitrogen and oxygen contained in a large amount in the air are targeted and 80% or more of the amount of gas that can be dissolved in the liquid LQ is removed, the generation of bubbles can be sufficiently suppressed. Of course, a degassing apparatus (not shown) may be provided in the exposure apparatus, and the liquid LQ may be supplied to the liquid supply apparatus 60 while always removing the dissolved gas in the liquid. As the degassing device, for example, a vacuum degassing device is preferable in which a gas permeable membrane is separated, the liquid LQ is flowed to one side, the other is evacuated, and the dissolved gas in the liquid is discharged into the vacuum through the membrane. It is.

  The liquid recovery apparatus 70 recovers the liquid LQ supplied from the liquid supply unit 60 to the space SP. The liquid recovery device 70 is, for example, a tank that temporarily stores the recovered liquid LQ, a suction device that sucks the liquid LQ, a flow rate adjustment device that adjusts the recovery flow rate of the liquid LQ, or a flow rate control that controls the recovery flow rate of the liquid LQ. Device.

  As shown in FIGS. 1 and 2, the nozzle 80 is disposed so as to surround the lens barrel 38 that holds the optical element 32 of the projection optical system 30. The lower surface 80 a of the nozzle 80 forms the same plane as the lower surface 38 a of the lens barrel 38 that holds the optical element 32. Further, the liquid LQ is maintained in the space SP between the optical element 32 and the object to be processed 40 even at the end of the object to be processed 40 around the object to be processed 40. In order to enable exposure at the same time, a same surface plate (planar plate) 48 having a height substantially equal to that of the workpiece 40 is disposed. The nozzle 80 and the same surface plate 48 are made of a material that is hardly chemically contaminated, such as stainless steel, a fluororesin, or a ceramic, and that can easily maintain a cleanliness.

  The supply port 82 for supplying the liquid LQ is provided in the nozzle 80 so as to surround the optical element 32 of the projection optical system 30 and is connected to the liquid supply device 60 via the supply pipe 62. The first recovery port 84 for recovering the liquid LQ is provided in the nozzle 80 so as to surround the optical element 32 inside the supply port 82 (that is, the projection optical system 30 side of the supply port 82). The liquid recovery device 70 is connected via a recovery pipe 72.

  In the present embodiment, the space SP between the optical element 32 of the projection optical system 30 and the object to be processed 40 is filled with the liquid LQ supplied from the liquid supply device 60 via the supply pipe 62 and the supply port 82. . The liquid LQ supplied to the space SP is recovered via the first recovery port 84, the recovery pipe 72, and the liquid recovery device 70. The liquid LQ is always supplied and recovered via the supply port 82 and the first recovery port 84, thereby being held in the space SP between the optical element 32 and the object to be processed 40.

  Since the first recovery port 84 is provided inside the supply port 82 (that is, closer to the projection optical system 30 than the supply port 82), only the liquid LQ can be recovered from the first recovery port 84. . Therefore, the liquid LQ is not recovered in the gas-liquid mixed state, and the temperature drop of the first recovery port 84 and the recovery pipe 72 due to the heat of vaporization can be prevented. Moreover, the temperature drop of the projection optical system 4 can also be prevented.

  The control unit 90 includes a CPU and a memory (not shown) and controls the operation of the exposure apparatus 1. The control unit 90 is electrically connected to the illumination device 10, reticle stage 25, wafer stage 45, liquid supply device 60, and liquid recovery device 70. The CPU includes any processor regardless of its name, such as MPU, and controls the operation of each unit. The memory is composed of ROM and RAM, and stores firmware that operates the exposure apparatus 1.

  In the present embodiment, the control unit 90 performs control related to immersion exposure. In other words, the control unit 90 controls the flow rate of the liquid LQ to be supplied, recovered, stopped, supplied, and recovered. Specifically, the control unit 90 assumes that the supply flow rate of the liquid LQ supplied from the supply port 82 is Q1, and the recovery flow rate of the liquid LQ recovered from the first recovery port 84 is Q2, and the supply flow rate Q1 and the recovery flow rate. The flow rate of the liquid LQ is controlled (adjusted) so that the flow rate Q2 becomes equal (Q1 = Q2). Thereby, all of the liquid LQ supplied from the supply port 82 can be recovered from the first recovery port 84. Further, air around the wafer stage 45 can be prevented from entering the liquid LQ across the supply port 82, and the liquid LQ supplied from the supply port 82 can flow out to the periphery of the wafer stage 45. Can be prevented. Therefore, the liquid LQ can be stably held in the space SP between the optical element 32 of the projection optical system 30 and the object to be processed 40.

  In the present embodiment, the supply port 82 and the first recovery port 84 have a circular shape. However, the shapes of the supply port 82 and the first recovery port 84 are not limited to a circular shape, and for example, the same effect can be obtained even in a rectangular shape.

  In this embodiment, the supply port 82 is provided so as to surround it. Accordingly, when the space L between the optical element 32 of the projection optical system 30 and the object to be processed 40 is filled with the liquid LQ, if the liquid LQ is supplied from the entire circumference of the supply port 82, the optical element 32 and the object 40 to be processed are filled. Bubbles may remain in the space SP between the two. In order to prevent this, a discharge port for discharging bubbles remaining in the space SP between the optical element 32 and the object to be processed 40 may be provided separately. Further, the supply port 82 may be divided (for example, divided into four), and a liquid supply device may be provided for each supply port, or a valve may be provided for each supply port to control opening and closing. The liquid LQ is supplied from one of the divided supply ports, and the space SP between the optical element 32 and the object to be processed 40 is filled with the liquid LQ, whereby the space SP between the optical element 32 and the object to be processed 40 is filled. It is possible to prevent bubbles from remaining on the surface. In this case, the first collection port 84 may also be divided and the collection may be controlled for each collection port. Thereby, the process of filling space SP between the optical element 32 and the to-be-processed object 40 with the liquid LQ can be performed smoothly.

  Next, with reference to FIG. 3, an exposure apparatus 1A that is another embodiment of the exposure apparatus 1 will be described. FIG. 3 is a schematic sectional view showing a configuration in the vicinity of the wafer stage 45 of the exposure apparatus 1A.

  The exposure apparatus 1A differs from the exposure apparatus 1 in that the nozzle 80 is further provided with a configuration of the nozzle 80, specifically, a second recovery port 86 for recovering the liquid LQ and gas. The second recovery port 86 recovers the liquid LQ that jumps out of the supply port 82.

  In FIG. 3, the second recovery port 86 for recovering the liquid LQ and the gas is provided on the nozzle 80 so as to surround the optical element 32 outside the supply port 82 (that is, opposite to the projection optical system 30 side). It is provided and connected to the recovery device 72A via the recovery pipe 72A. The recovery device 72A controls (adjusts), for example, a tank that separates the recovered liquid LQ and gas, temporarily stores the liquid LQ, a suction device that sucks the liquid LQ and gas, and a recovery flow rate of the liquid LQ and gas. A flow rate control (adjustment) device.

  Since the exposure apparatus 1 </ b> A is a scanner, the liquid LQ is dragged and moved by the object to be processed 40 due to the effect of viscosity when the wafer stage 45 is stepped or scanned. As a result, the liquid LQ may jump out of the supply port 82 and remain with the liquid LQ attached to the wafer stage 45 and its periphery.

  If the liquid LQ remains in or around the wafer stage 45, the humidity of the wafer stage 45 and its surroundings changes due to evaporation of the remaining liquid LQ, and the positioning accuracy of the wafer stage 45 deteriorates. Further, the temperature around the remaining liquid LQ is lowered due to the heat of vaporization due to evaporation of the remaining liquid LQ, and a local temperature distribution is generated around the wafer stage 45 and its surroundings. Such temperature distribution also deteriorates the positioning accuracy of the stage 7.

  The exposure apparatus 1A is provided with a second recovery port 86, and recovers the liquid LQ that has jumped out of the supply port 82, thereby preventing the liquid LQ from remaining on the wafer stage 45 and its periphery.

  Further, when the second recovery port 86 is provided, unlike the exposure apparatus 1, it is not always necessary to control (adjust) the flow rate of the liquid LQ so that the supply flow rate Q1 and the recovery flow rate Q2 are equal. In the exposure apparatus 1, the air around the wafer stage 45 is prevented from entering the liquid LQ across the supply port 82, and the liquid LQ is prevented from flowing out to the periphery of the wafer stage 45. The supply flow rate Q1 = recovery flow rate Q2 is essential. However, if the flow rate balance of supply flow rate Q1 = recovery flow rate Q2 temporarily collapses even slightly due to, for example, sudden atmospheric pressure fluctuation outside the exposure apparatus 1, air enters the liquid LQ across the supply port 82. Alternatively, the liquid LQ flows out around the wafer stage 45.

  In the exposure apparatus 1A, the control unit 90 controls (adjusts) the flow rate of the liquid LQ so that the supply flow rate Q1> the recovery flow rate Q2. Furthermore, by recovering a part of the liquid LQ from the first recovery port 84 and recovering the remaining liquid LQ from the second recovery port 86, the flow rate balance between the supply flow rate Q1 and the recovery flow rate Q2 is temporarily changed. Even when it fluctuates, air can be prevented from entering the liquid LQ across the supply port 82. Of course, the liquid LQ can be prevented from flowing out to the periphery of the wafer stage 45.

  Further, in the exposure apparatus 1A, in order to prevent the liquid LQ from jumping out to the wafer stage 45 and the vicinity thereof, both the liquid LQ and the gas from the second recovery port 86, that is, the gas / liquid from the second recovery port 86 are used. The liquid LQ is recovered in the mixed state. However, since only a part of the liquid LQ is recovered from the second recovery port 86, the amount of heat taken away by the heat of vaporization can be reduced, and the temperature drop caused by the heat of vaporization can be reduced.

  In order to reduce the temperature drop due to the heat of vaporization generated at the second recovery port 86, it is preferable to reduce the recovery flow rate Q3 of the liquid LQ recovered from the second recovery port 86 as much as possible. Specifically, if the ratio (Q2 / Q3) between the recovery flow rate Q2 of the liquid LQ recovered from the first recovery port 84 and the recovery flow rate Q3 (Q2 / Q3) is equal to or greater than Q2 / Q3> 9, The temperature drop due to the heat of vaporization generated at the recovery port 86 can be sufficiently reduced. In other words, 90% or more of the liquid LQ supplied from the supply port 82 may be recovered from the first recovery port 84. At this time, since the supply flow rate Q1 and the recovery flow rate Q2 have the relationship of supply flow rate Q1> recovery flow rate Q2, air is supplied even if the flow rate balance of the supply flow rate Q1, recovery flow rate Q2, and Q3 is temporarily lost. Intrusion into the liquid LQ across the mouth 82 can be prevented. Of course, the liquid LQ can also be prevented from flowing out around the wafer stage 45.

  In the exposure apparatus 1A, the supply port 82, the first recovery port 84, and the second recovery port 84 may be configured as simple openings. However, the supply port 82, the first recovery port 84, and the second recovery port 86 are provided from the viewpoint that the supply flow rate and the recovery flow rate are not uneven, and that the flow velocity distribution in the surface is supplied or recovered in a substantially uniform state. It is desirable that a plurality of small holes be arranged on the circumference. The supply port 82, the first recovery port 84, and the second recovery port 84 may use a slit that blows out gas from a minute gap, or is made of a metal, resin, or inorganic material used for a filter or the like. You may use porous members, such as a sintered material, a foam material, and a fiber material.

  From the viewpoint that the heat of vaporization of the liquid LQ generated when passing through the recovery port can be reduced even slightly, it is preferable to make the contact area between the air and the liquid LQ smaller in the recovery port. Therefore, it is more preferable to use a slit for blowing out gas from a plurality of small holes or minute gaps in the recovery port.

  Next, an exposure apparatus 1B which is another embodiment of the exposure apparatus 1A will be described with reference to FIGS. FIG. 4 is a schematic sectional view showing a configuration in the vicinity of the wafer stage 45 of the exposure apparatus 1B. FIG. 5 is an enlarged cross-sectional view of the vicinity of the optical element 32 and the supply port 82 of the projection optical system 30 in the exposure apparatus 1B.

  In the exposure apparatus 1B, the optical element 32 of the projection optical system 30 is held by a lens barrel 38, and the nozzle 80 is provided in the same shape as the side surface 38b of the lens barrel 38. Further, in the exposure apparatus 1B, as shown in FIG. 5, a first recovery port is provided so that a gap G is provided between the nozzle 80 and the side surface 38b of the lens barrel 38 and faces the side surface 38b of the lens barrel 38. 82 is provided in the nozzle 80. The liquid LQ flows through the gap G and is recovered from the first recovery port 84. Here, the gap G is about 0.1 mm to 1 mm.

  In the exposure apparatus 1B, since the first recovery port 82 is provided in the nozzle 80 so as to face the side surface 38b of the lens barrel 38, the supply port 82 and the second recovery port 86 are connected to the optical element 32. Can be placed closer to. Thereby, in the space SP between the optical element 32 of the projection optical system 30 and the object to be processed 40, an area (liquid immersion area) occupied by the liquid LQ can be reduced. When the immersion area is reduced, the time for filling the space SP between the optical element 32 and the object to be processed 40 with the liquid LQ or the time for collecting the liquid LQ can be reduced to a short time. Can be improved. Furthermore, when the liquid immersion area is reduced, the size of the same surface plate 48 can be minimized. Thereby, the moving distance of the wafer stage 45 can be reduced, and the apparatus size can be reduced.

  Exposure apparatuses 1C and 1D, which are modifications of exposure apparatus 1B, will be described with reference to FIGS. FIG. 6 is an enlarged cross-sectional view of the vicinity of the optical element 32 and the supply port 82 of the exposure apparatus 1C, which is a modification of the exposure apparatus 1B. FIG. 7 is an enlarged cross-sectional view of the vicinity of the optical element 32 and the supply port 82 of the exposure apparatus 1D which is a modification of the exposure apparatus 1C. FIG. 8 is a schematic plan view of the exposure apparatus 1D viewed from above the optical element 32 of the projection optical system 30. FIG.

  As illustrated in FIG. 6, the exposure apparatus 1 </ b> C has a nozzle 80 disposed so as to face the side surface 32 b of the optical element 32 of the projection optical system 30. Therefore, the exposure apparatus 1C further reduces the liquid immersion area compared to the exposure apparatus 1B shown in FIGS. 4 and 5 (that is, when the nozzle 80 is disposed so as to face the side surface 38b of the lens barrel 38). be able to. As a result, the exposure apparatus 1C can further improve the productivity of the apparatus and further reduce the apparatus size.

  The exposure apparatus 1 </ b> C uses a plurality of small holes, slits, or porous members for the first recovery port 84, similarly to the exposure apparatuses 1 and 1 </ b> A. On the other hand, the exposure apparatus 1D can obtain the same effects as those obtained when these members are used without using these members.

  As shown in FIGS. 7 and 8, the exposure apparatus 1 </ b> D is provided with an annular groove 84 a as the first recovery port 84 so as to surround the optical element 32 of the projection optical system 30. Here, the width and depth of the annular groove 84a are about 5 mm. Further, since the gap G between the optical element 32 and the nozzle 80 plays the role of a pressure resistor, the gap G is set to be about 0.1 mm to 0.3 mm, which is slightly narrower than the exposure apparatus 1C shown in FIG. Yes.

  By narrowing the gap G, the gap G can be a pressure resistor with respect to the liquid LQ. As shown in FIG. 8, the annular groove 84 a reduces the pressure loss generated in the flow FL of the liquid LQ until the liquid 22 flowing through the gap G reaches the inlet 72 a of the recovery pipe 72. As a result, the liquid LQ is quickly recovered from the recovery pipe 72.

  As described above, by using the annular groove 84 a as the first recovery port 84, the pressure loss generated until the liquid LQ flowing through the gap G reaches the inlet 72 a of the recovery pipe 72 is reduced. Can do. Thereby, the gap G can fully play the role of a pressure resistor with respect to the liquid LQ. Accordingly, when the liquid LQ flows through the gap G, the flow velocity distribution in a plane perpendicular to the direction of the flow L of the liquid LQ (the + Z axis direction in FIG. 7), that is, in a plane parallel to the workpiece 40 is substantially reduced. It can be made uniform. In other words, even when the annular groove 84 a is used, the same effect as that obtained when a slit is used as the first recovery port 84 can be obtained.

  As described above, in the exposure apparatus 1D, by narrowing the gap G, it is possible to obtain the same effect as in the case of using the slit while using a simple configuration of the annular groove 48a. In the present embodiment, the exposure apparatuses 1B to 1D open the gap G between the nozzle 80 and the lens barrel 38 or the upper portion of the gap G between the nozzle 80 and the optical element 32. However, a sealing member may be provided above the gap G. By providing the sealing member, air does not flow from the upper part of the gap G, and the liquid LQ can be recovered more reliably.

  Next, an exposure apparatus 1E that is another embodiment of the exposure apparatus 1 will be described with reference to FIGS. FIG. 9 is a schematic sectional view showing a configuration in the vicinity of the wafer stage 45 of the exposure apparatus 1E. FIG. 10 is a schematic plan view of the exposure apparatus IE as viewed from above the optical element 32 of the projection optical system 30.

  As shown in FIGS. 9 and 10, the exposure apparatus 1 </ b> E controls a heater 100 and a control unit to prevent a temperature drop that occurs in the projection optical system 30 due to the heat of vaporization of the liquid LQ when the liquid LQ is recovered. Part 110. The heater 100 is provided between the supply port 82 and the second recovery port 86 in the nozzle 80 so as to surround the supply port 82. The controller 110 sets the amount of heat generated by the heater 100 to a constant value. The control unit 110 is composed of, for example, a PDI controller.

  In the exposure apparatus 1E, only the second recovery port 86 is provided as a recovery port for recovering the liquid LQ. Therefore, since all of the liquid LQ supplied from the supply port 82 is recovered from the second recovery port 86 in a gas-liquid mixed state, the liquid LQ is deprived by the heat of vaporization of the liquid LQ in the vicinity of the second recovery port 86. The amount of heat increases. As a result, a large temperature drop occurs in the vicinity of the second recovery port 86.

  However, by setting the heating value of the heater 100 to a constant value so as to cancel out the temperature decrease in the vicinity of the second recovery port 86, the temperature decrease of the projection optical system 30 can be prevented. Therefore, even if the temperature in the vicinity of the second recovery port 86 decreases, the optical performance of the projection optical system 30 does not deteriorate, and the exposure apparatus 1E can expose the object to be processed 40 with high accuracy.

  In the present embodiment, the exposure apparatus 1E is provided with only the second recovery port 86 as a recovery port for recovering the liquid LQ, but may further include a first recovery port that recovers only the liquid LQ. By providing the first recovery port, the recovery flow rate of the liquid LQ recovered from the second recovery port 86 can be reduced. Accordingly, the amount of heat taken away by the heat of vaporization can be reduced. As a result, the amount of heat generated by the heater 100 can be reduced, and the power consumed by the apparatus can be suppressed.

  As shown in FIG. 11, the exposure apparatus 1 </ b> E may include a temperature sensor 120 of the projection optical system 30 and control the amount of heat generated by the heater 100 based on the measurement result of the temperature sensor 120. Here, FIG. 11 is an enlarged sectional view of the vicinity of the optical element 32 and the supply port 82 of the exposure apparatus 1E.

  The exposure apparatus 1E further includes a temperature sensor 120 provided in the projection optical system 30 and a thermometer 130 that measures the temperature of the projection optical system 30 in real time. In this case, the control unit 110 compares the temperature T output from the thermometer 130 with the target temperature Ts of the projection optical system 30 so that the temperature of the projection optical system 30 falls within a predetermined temperature range. Control the amount of heat generated by 100.

  In the exposure apparatus 1E shown in FIG. 11, when the temperature of the projection optical system 30 is controlled, the control unit 110 feeds back the temperature T output from the thermometer 130, and the deviation between the temperature T and the target temperature Ts is zero. Thus, the heat generation amount of the heater 100 is controlled. The flow rate balance between the supply flow rate Q1 and the recovery flow rate Q3 of the liquid LQ supplied and recovered from the supply port 82 and the second recovery port 84 is disrupted, and the amount of heat deprived temporarily by the heat of vaporization of the liquid LQ increases. Consider a case where the temperature drop near the second recovery port 84 becomes large. In this case, the control unit 110 increases the amount of heat generated by the heater 100. On the other hand, when the flow rate balance of the liquid LQ returns to the original state and the amount of heat taken away by the heat of vaporization of the liquid LQ approaches the original state, the control unit 110 reduces the heat generation amount of the heater 100 and reduces the heat generation amount of the heater 100. To the original state.

  In this manner, the temperature of the projection optical system 30 is measured in real time using the temperature sensor 120, and the amount of heat generated by the heater 100 is controlled. As a result, even when the flow rate balance between the supply flow rate Q1 and the recovery flow rate Q3 is temporarily lost, the temperature of the projection optical system 30 can always be stably maintained at a constant temperature (within a predetermined temperature range). In the exposure apparatus 1E shown in FIG. 11, only one temperature sensor 120 is provided in the projection optical system 30, but it is needless to say that a plurality of temperature sensors 120 may be provided in the nozzle 80.

  In the exposure apparatus 1E shown in FIGS. 9 to 11, the heater 100 is provided only between the supply port 82 and the second recovery port 86 so as to surround the supply port 82. Separately, a new heater may be provided. For example, in the exposure apparatus 1E, in addition to the heater 100, a new heater may be provided so as to surround the second recovery port 86. In this case, a control unit for controlling the heat generation amount of the heater provided outside the second recovery port 86 may be provided separately from the control unit 110, and the heat generation amounts of the two heaters may be controlled independently of each other. Thereby, the temperature of the projection optical system 30 can be kept constant more stably.

  Examples of the heater 100 used in the exposure apparatus 1E include a sheathed heater, a micro heater, a sheet heater, and a rubber heater. However, no matter which heater is used, the effect obtained by the exposure apparatus 1E remains the same. Therefore, what heater should be used may be determined according to the purpose of use. For example, when the heater 100 is provided in the nozzle 80 as in the exposure apparatus 1E, a sheathed heater or a micro heater may be used. In addition, when a heater is provided on the side surface of the nozzle 80 along the shape of the nozzle 80, it is preferable to use a seat heater or a rubber heater.

  In the exposure apparatus 1E, as a means for preventing the temperature drop in the vicinity of the second recovery port 86 caused by the heat of vaporization of the liquid LQ recovered from the second recovery port 86 from being transmitted to the projection optical system 30. A heater 100 is used. However, as a means for preventing the temperature drop in the vicinity of the second recovery port 86 from being transmitted to the projection optical system 30, a solution via a temperature adjustment unit 150 may be used as shown in FIG. FIG. 12 is a schematic plan view of another embodiment of the exposure apparatus 1E viewed from above the optical element 32 of the projection optical system 30. FIG.

  In FIG. 12, reference numeral 151 denotes a path for flowing a solution for adjusting the temperature of the nozzle 80 in the vicinity of the second recovery port 86. The path 151 is a complete circulation system, that is, a closed path via the temperature control unit 150.

  The temperature control unit 150 includes an impurity removal device 152 that removes impurities in the solution, a temperature adjustment unit 153 and a temperature control unit 154 that control the solution to a predetermined temperature, and a temperature detection unit 155 that detects the temperature of the solution. Have.

  The impurity removing device 152 is configured by, for example, all or part of a degassing membrane, an ion exchange resin, a reverse osmosis membrane, an activated carbon filter, a membrane filter, a germicidal lamp, and the like. In addition, when pure water is used as the solution, it is necessary to maintain the purity (water quality) of pure water at a predetermined level, and therefore it is preferable to provide an impurity removing device 152. However, if the solution is a liquid whose characteristics (performance) can be easily maintained, for example, a scientifically very stable liquid that does not cause deterioration or decay of the solution, an impurity removing device 152 is not necessarily provided.

  The temperature control unit 154 controls the temperature adjustment unit 153 based on the temperature detected by the temperature detection unit 155 and supplies a solution having a predetermined temperature into the nozzle 80. For example, pure water, a fluorine-based inert solution, or an antifreeze solution is used as the solution.

  In the exposure apparatus 1 </ b> E shown in FIG. 12, the temperature of the nozzle 80 in the vicinity of the second recovery port 86 is greatly reduced by the heat of vaporization in the vicinity of the second recovery port 86. However, the temperature drop of the projection optical system 30 can be prevented by increasing the temperature of the solution flowing through the path 151 by the temperature drop of the nozzle 80. Therefore, even if the temperature in the vicinity of the second recovery port 86 decreases, the optical performance of the projection optical system 30 does not deteriorate, and the exposure apparatus 1E shown in FIG. 12 exposes the workpiece 40 with high accuracy. Can do.

  In the exposure apparatus 1E shown in FIG. 12, the temperature sensor of the exposure apparatus 1E shown in FIG. 11 is provided in the projection optical system 30 instead of the temperature detection unit 155 of the temperature adjustment unit 150, and based on the measurement result of the temperature sensor. The temperature adjustment unit 153 and the temperature control unit 154 may be controlled. By providing the projection optical system 30 with the temperature sensor, it is possible to prevent the temperature drop of the projection optical system 30 more reliably.

  In the present embodiment, the exposure apparatus 1E shown in FIG. 12 allows the temperature-adjusted solution to flow only in the path 151. However, a separate path for flowing the temperature-adjusted solution may be provided separately from the path 151 and the temperature may be controlled independently of the path 151. By providing a plurality of paths through which the temperature-controlled solution flows, the temperature of the projection optical system 30 can be maintained more stably.

  In the present embodiment, the exposure apparatus 1E includes, as means for preventing the temperature drop in the vicinity of the second recovery port 86 from being transmitted to the projection optical system 30 to the nozzle 80 in the vicinity of the second recovery port 86, the heater 100 and A temperature-controlled solution was used. However, any form of means may be used as long as the temperature drop of the projection optical system 30 can be effectively prevented. For example, a heat insulating material may be provided between the supply port 82 and the second recovery port 86 to prevent the temperature drop in the vicinity of the second recovery port 86 from being transmitted to the projection optical system 30. Of course, the nozzle 80 is separated into a portion where the supply port 82 is provided and a portion where the second recovery port 86 is provided, and an air layer is formed between the supply port 82 and the second recovery port 86. May be provided. Further, a blowout port for blowing out the gas whose temperature has been adjusted toward the projection optical system 30 may be provided around the projection optical system 30. Any of these means can effectively prevent the temperature drop in the vicinity of the second recovery port 86 from being transmitted to the projection optical system 30.

  As described above, the exposure apparatuses 1 to 1E are caused by the temperature drop due to the heat of vaporization of the liquid LQ generated when the liquid LQ is recovered from the space SP between the optical element 32 of the projection optical system 30 and the target object 40. Degradation of the optical performance of the projection optical system 30 can be reduced. Therefore, the exposure apparatuses 1 to 1E can stably maintain the excellent optical performance of the projection optical system 30. The exposure apparatuses 1 to 1E can position the wafer stage 45 with high accuracy. Therefore, the exposure apparatuses 1 to 1E can perform projection exposure with high accuracy, and can finely project a fine circuit pattern.

  In the exposure, the light beam emitted from the light source unit 12 illuminates the reticle 20 by the illumination optical system 14, for example, Koehler illumination. The light that passes through the reticle 20 and reflects the reticle pattern is imaged by the projection optical system 30 on the object 40 via the liquid LQ. The exposure apparatus 1 can prevent the optical performance of the projection optical system 30 from deteriorating due to the heat of vaporization generated when the liquid LQ is recovered, and expose the pattern of the reticle 20 with extremely high resolution (excellent exposure performance). it can. As a result, the exposure apparatus 1 can provide a high-quality device (semiconductor element, LCD element, imaging element (CCD, etc.), thin film magnetic head, etc.) with high throughput and economical efficiency.

  Next, an embodiment of a device manufacturing method using the exposure apparatuses 1 to 1E described above will be described with reference to FIGS. FIG. 13 is a flowchart for explaining how to fabricate devices (ie, semiconductor chips such as IC and LSI, LCDs, CCDs, and the like). Here, the manufacture of a semiconductor chip will be described as an example. In step 1 (circuit design), a device circuit is designed. In step 2 (reticle fabrication), a reticle on which the designed circuit pattern is formed is fabricated. In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by the lithography technique of the present invention using the reticle and the wafer. Step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer created in step 4. The assembly process (dicing, bonding), packaging process (chip encapsulation), and the like are performed. Including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 14 is a detailed flowchart of the wafer process in Step 4. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition or the like. Step 14 (ion implantation) implants ions into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatuses 1 to 1E to expose a reticle circuit pattern onto the wafer. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer. According to this device manufacturing method, it is possible to manufacture a higher quality device than before. Thus, the device manufacturing method using the exposure apparatuses 1 to 1E and the resulting device also constitute one aspect of the present invention.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist. For example, although the exposure apparatus of this embodiment has one stage (single stage) for holding the object to be processed, the present invention is also applicable to an exposure apparatus having two stages (twin stage) for holding the object to be processed. Can be applied.

It is a schematic sectional drawing which shows the structure of the exposure apparatus as one side surface of this invention. It is the schematic plan view which looked at the exposure apparatus shown in FIG. 1 from the upper direction of the optical element of a projection optical system. It is a schematic sectional drawing which shows the structure of the vicinity of the wafer stage of another embodiment of the exposure apparatus shown in FIG. It is a schematic sectional drawing which shows the structure of the vicinity of the wafer stage of another embodiment of the exposure apparatus shown in FIG. It is an expanded sectional view of the vicinity of the optical element and supply port of the projection optical system shown in FIG. FIG. 6 is an enlarged cross-sectional view of the vicinity of an optical element and a supply port of an exposure apparatus which is a modification of the exposure apparatus shown in FIGS. 4 and 5. It is an expanded sectional view of the vicinity of the optical element and supply port of the exposure apparatus which is a modification of the exposure apparatus shown in FIG. It is the schematic plan view which looked at the exposure apparatus shown in FIG. 7 from the upper direction of the optical element of a projection optical system. It is a schematic sectional drawing which shows the structure of the vicinity of the wafer stage of another embodiment of the exposure apparatus shown in FIG. It is the schematic plan view which looked at the exposure apparatus shown in FIG. 9 from the upper direction of the optical element of a projection optical system. FIG. 10 is an enlarged cross-sectional view of the vicinity of an optical element and a supply port of the exposure apparatus shown in FIG. 9. It is the schematic plan view which looked at another embodiment of the exposure apparatus shown in FIG. 9 from the upper direction of the optical element of a projection optical system. It is a flowchart for demonstrating manufacture of devices (semiconductor chips, such as IC and LSI, LCD, CCD, etc.). 14 is a detailed flowchart of the wafer process in Step 4 shown in FIG. 13. It is a schematic sectional drawing which shows the structure of the conventional immersion exposure apparatus.

Explanation of symbols

1 to 1E Exposure apparatus 10 Illumination apparatus 20 Reticle 25 Reticle stage 30 Projection optical system 32 Optical element 38 Lens tube 40 Object 45 Wafer stage 60 Liquid supply apparatus 62 Supply pipe 70 Liquid recovery apparatus 70A Gas liquid recovery apparatus 72 Recovery pipe 80 Nozzle 82 Supply port 84 First recovery port 84a Groove 86 Second recovery port 90 Control unit 100 Heater 110 Control unit 120 Temperature sensor 150 Temperature control unit 151 Path 152 Impurity removing device 153 Temperature adjustment unit 154 Temperature control unit 155 Temperature detection Part SP Space LQ Liquid G Gap

Claims (11)

An exposure apparatus that projects an original pattern onto a substrate,
A projection optical system for projecting the pattern onto the substrate;
A supply port disposed on an outer periphery of a space portion formed by an end surface facing the substrate of the projection optical system, and a liquid is passed through the supply port between the final surface and the substrate in the eating trunk Supply means for supplying;
A recovery port disposed between the final surface and the supply port around the final surface; and the liquid supplied between the final surface and the substrate by the supply means Collecting means for collecting through
An exposure apparatus characterized in that a flow rate of liquid supplied from the supply port is substantially equal to a flow rate of liquid recovered from the recovery port. First adjusting means for adjusting the flow rate of the liquid supplied from the supply port;
The exposure apparatus according to claim 1, further comprising a second adjusting unit that adjusts a flow rate of the liquid recovered from the recovery port.   3. An exposure apparatus according to claim 1, further comprising: a nozzle member having a plane substantially the same as the final surface as a bottom surface and having the supply port and the recovery port disposed in the bottom surface. An exposure apparatus that projects an original pattern onto a substrate,
A projection optical system for projecting the pattern onto the substrate;
A supply unit having a supply port arranged around a final surface of the projection optical system, and supplying a liquid via the supply port between the final surface and the substrate;
A first recovery port disposed outside the supply port in the periphery of the final surface, and the liquid supplied between the final surface and the substrate by the supply unit is used as the first recovery port; Collecting means for collecting via
An exposure apparatus comprising: a reducing unit that reduces a temperature drop around the first recovery port.   5. The exposure apparatus according to claim 4, wherein the collection unit has a second collection port disposed between the final surface and the supply port around the final surface.   6. The exposure according to claim 4, wherein the reducing unit includes one of a heating unit and a heat insulating unit disposed between the first recovery port and the supply port around the final surface. apparatus.   The reduction means includes a heating means disposed between the first recovery port and the supply port around the final surface, a detection unit for detecting the temperature of the projection optical system, and an output of the detection unit 6. An exposure apparatus according to claim 4, further comprising a control means for controlling the heating means based on the above.   6. The exposure apparatus according to claim 5, wherein the flow rate of the liquid recovered from the first recovery port is smaller than 1/9 of the flow rate of the liquid recovered from the second recovery port.   The exposure apparatus according to claim 4, wherein at least the first recovery port includes a plurality of holes or a porous member.   10. The nozzle according to claim 4, further comprising: a nozzle member having a plane substantially the same as the final surface as a bottom surface, and the supply port and the first recovery port arranged in the bottom surface. An exposure apparatus according to claim 1.   11. A device manufacturing method comprising an exposure step of projecting a pattern of an original on a substrate using the exposure apparatus according to any one of claims 1 to 10.