JP2006060074A5 - - Google Patents

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Publication number
JP2006060074A5
JP2006060074A5 JP2004241269A JP2004241269A JP2006060074A5 JP 2006060074 A5 JP2006060074 A5 JP 2006060074A5 JP 2004241269 A JP2004241269 A JP 2004241269A JP 2004241269 A JP2004241269 A JP 2004241269A JP 2006060074 A5 JP2006060074 A5 JP 2006060074A5
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JP
Japan
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JP2004241269A
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Japanese (ja)
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JP2006060074A (ja
JP4752214B2 (ja
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Publication of JP2006060074A5 publication Critical patent/JP2006060074A5/ja
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JP2004241269A 2004-08-20 2004-08-20 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法 Expired - Fee Related JP4752214B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004241269A JP4752214B2 (ja) 2004-08-20 2004-08-20 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004241269A JP4752214B2 (ja) 2004-08-20 2004-08-20 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010275693A Division JP2011049610A (ja) 2010-12-10 2010-12-10 ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス

Publications (3)

Publication Number Publication Date
JP2006060074A JP2006060074A (ja) 2006-03-02
JP2006060074A5 true JP2006060074A5 (zh) 2007-08-09
JP4752214B2 JP4752214B2 (ja) 2011-08-17

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Family Applications (1)

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JP2004241269A Expired - Fee Related JP4752214B2 (ja) 2004-08-20 2004-08-20 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法

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JP (1) JP4752214B2 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010835A (ja) * 2006-05-31 2008-01-17 Sumitomo Electric Ind Ltd 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法
CN101081485A (zh) * 2006-05-31 2007-12-05 住友电气工业株式会社 表面处理方法、氮化物晶体衬底、半导体器件和制造方法
PL3157045T3 (pl) * 2006-07-26 2021-12-20 Freiberger Compound Materials Gmbh Wygładzone powierzchnie III-N
US7585772B2 (en) 2006-07-26 2009-09-08 Freiberger Compound Materials Gmbh Process for smoothening III-N substrates
JP4341721B2 (ja) * 2006-10-19 2009-10-07 住友電気工業株式会社 ＧａＮ基板、ＩＩＩ族窒化物基板の製造方法、エピタキシャル層付き基板の製造方法および半導体素子の製造方法
US8283694B2 (en) 2006-10-19 2012-10-09 Sumitomo Electric Industries, Ltd. GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
WO2008060505A1 (en) * 2006-11-15 2008-05-22 Cabot Microelectronics Corporation Methods for polishing aluminum nitride
WO2008082920A1 (en) * 2006-12-28 2008-07-10 Memc Electronic Materials, Inc. Methods for producing smooth wafers
JP2009263534A (ja) * 2008-04-25 2009-11-12 Yushiro Chem Ind Co Ltd 砥粒分散媒、スラリー組成物、脆性材料の研磨方法およびサファイア基板の製造方法
JP2012248594A (ja) * 2011-05-26 2012-12-13 Kyushu Institute Of Technology 研磨剤
JP6078864B2 (ja) * 2011-11-01 2017-02-15 株式会社クリスタル光学 研磨材
TWI566884B (zh) * 2012-03-05 2017-01-21 福吉米股份有限公司 硏磨用組成物、及使用該硏磨用組成物之化合物半導體基板之製造方法
JP5988480B2 (ja) * 2012-06-05 2016-09-07 株式会社フジクラ 研磨方法
JP5990444B2 (ja) * 2012-11-01 2016-09-14 昭和電工株式会社 炭化珪素半導体装置の製造方法
JP6861063B2 (ja) * 2017-03-23 2021-04-21 山口精研工業株式会社 窒化アルミニウム多結晶基板用研磨剤組成物および窒化アルミニウム多結晶基板の研磨方法
CN108381379B (zh) * 2018-04-13 2019-05-24 中国电子科技集团公司第四十六研究所 氮化铝单晶片电解抛光及化学机械抛光相结合的抛光方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3606015B2 (ja) * 1997-07-23 2005-01-05 豊田合成株式会社 ３族窒化物半導体素子の製造方法
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
JP2002184726A (ja) * 2000-12-19 2002-06-28 Okamoto Machine Tool Works Ltd 硬脆材料基板用研磨剤
EP1446263B1 (en) * 2001-11-20 2008-12-24 Rensselaer Polytechnic Institute Method for polishing a substrate surface
US20060183625A1 (en) * 2002-07-09 2006-08-17 Kenichiro Miyahara Substrate for forming thin film, thin film substrate, optical wave guide, luminescent element and substrate for carrying luminescent element
FR2843061B1 (fr) * 2002-08-02 2004-09-24 Soitec Silicon On Insulator Procede de polissage de tranche de materiau

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