JP2006041246A5 - - Google Patents
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- Publication number
- JP2006041246A5 JP2006041246A5 JP2004220156A JP2004220156A JP2006041246A5 JP 2006041246 A5 JP2006041246 A5 JP 2006041246A5 JP 2004220156 A JP2004220156 A JP 2004220156A JP 2004220156 A JP2004220156 A JP 2004220156A JP 2006041246 A5 JP2006041246 A5 JP 2006041246A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- film
- interlayer insulating
- etching mask
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims 9
- 239000003990 capacitor Substances 0.000 claims 8
- 239000011229 interlayer Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 238000001039 wet etching Methods 0.000 claims 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- 239000010410 layer Substances 0.000 claims 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- VIUKNDFMFRTONS-UHFFFAOYSA-N distrontium;niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Sr+2].[Sr+2].[Nb+5].[Nb+5] VIUKNDFMFRTONS-UHFFFAOYSA-N 0.000 claims 2
- IVUXZQJWTQMSQN-UHFFFAOYSA-N distrontium;oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Sr+2].[Sr+2].[Ta+5].[Ta+5] IVUXZQJWTQMSQN-UHFFFAOYSA-N 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004220156A JP4318607B2 (ja) | 2004-07-28 | 2004-07-28 | 強誘電体キャパシタの製造方法 |
| US11/105,439 US7157288B2 (en) | 2004-07-28 | 2005-04-14 | Method of producing ferroelectric capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004220156A JP4318607B2 (ja) | 2004-07-28 | 2004-07-28 | 強誘電体キャパシタの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006041246A JP2006041246A (ja) | 2006-02-09 |
| JP2006041246A5 true JP2006041246A5 (enExample) | 2006-11-30 |
| JP4318607B2 JP4318607B2 (ja) | 2009-08-26 |
Family
ID=35905912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004220156A Expired - Fee Related JP4318607B2 (ja) | 2004-07-28 | 2004-07-28 | 強誘電体キャパシタの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7157288B2 (enExample) |
| JP (1) | JP4318607B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4621081B2 (ja) * | 2005-07-07 | 2011-01-26 | Ｏｋｉセミコンダクタ株式会社 | 半導体装置の製造方法 |
| JP4838613B2 (ja) * | 2006-03-28 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP2009071241A (ja) * | 2007-09-18 | 2009-04-02 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| US8451308B2 (en) | 2009-07-31 | 2013-05-28 | Ricoh Company, Ltd. | Image forming apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0131743B1 (ko) * | 1993-12-28 | 1998-04-15 | 김주용 | 디램셀의 저장전극 형성방법 |
| US6495413B2 (en) * | 2001-02-28 | 2002-12-17 | Ramtron International Corporation | Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits |
| US6423592B1 (en) * | 2001-06-26 | 2002-07-23 | Ramtron International Corporation | PZT layer as a temporary encapsulation and hard mask for a ferroelectric capacitor |
| US20030143853A1 (en) * | 2002-01-31 | 2003-07-31 | Celii Francis G. | FeRAM capacitor stack etch |
| US6753247B1 (en) * | 2002-10-31 | 2004-06-22 | Advanced Micro Devices, Inc. | Method(s) facilitating formation of memory cell(s) and patterned conductive |
| US7001821B2 (en) * | 2003-11-10 | 2006-02-21 | Texas Instruments Incorporated | Method of forming and using a hardmask for forming ferroelectric capacitors in a semiconductor device |
-
2004
- 2004-07-28 JP JP2004220156A patent/JP4318607B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-14 US US11/105,439 patent/US7157288B2/en not_active Expired - Fee Related
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