JP2006032917A5 - - Google Patents
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- Publication number
- JP2006032917A5 JP2006032917A5 JP2005168061A JP2005168061A JP2006032917A5 JP 2006032917 A5 JP2006032917 A5 JP 2006032917A5 JP 2005168061 A JP2005168061 A JP 2005168061A JP 2005168061 A JP2005168061 A JP 2005168061A JP 2006032917 A5 JP2006032917 A5 JP 2006032917A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- silicon
- gate electrode
- forming
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 20
- 229910052751 metal Inorganic materials 0.000 claims 19
- 239000002184 metal Substances 0.000 claims 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 13
- 229910052710 silicon Inorganic materials 0.000 claims 13
- 239000010703 silicon Substances 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 11
- 238000000034 method Methods 0.000 claims 11
- 239000011856 silicon-based particle Substances 0.000 claims 10
- 239000006104 solid solution Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 6
- 238000004544 sputter deposition Methods 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 3
- 238000009413 insulation Methods 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005168061A JP4657016B2 (ja) | 2004-06-14 | 2005-06-08 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004176189 | 2004-06-14 | ||
| JP2005168061A JP4657016B2 (ja) | 2004-06-14 | 2005-06-08 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006032917A JP2006032917A (ja) | 2006-02-02 |
| JP2006032917A5 true JP2006032917A5 (https=) | 2008-05-29 |
| JP4657016B2 JP4657016B2 (ja) | 2011-03-23 |
Family
ID=35898835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005168061A Expired - Fee Related JP4657016B2 (ja) | 2004-06-14 | 2005-06-08 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4657016B2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9953259B2 (en) | 2004-10-08 | 2018-04-24 | Thin Film Electronics, Asa | RF and/or RF identification tag/device having an integrated interposer, and methods for making and using the same |
| JP2007213461A (ja) * | 2006-02-13 | 2007-08-23 | Dainippon Printing Co Ltd | Ｉｃタグラベル |
| JP2008072087A (ja) * | 2006-08-16 | 2008-03-27 | Kyoto Univ | 半導体装置および半導体装置の製造方法、ならびに表示装置 |
| US7851277B2 (en) * | 2006-12-05 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
| US7791172B2 (en) | 2007-03-19 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| JP2009048371A (ja) * | 2007-08-17 | 2009-03-05 | Kovio Inc | 集積化インタポーザを有するｒｆタグ／装置及／又はびｒｆｉｄタグ／装置、並びにその製造方法及び使用方法 |
| JP5364407B2 (ja) * | 2009-03-24 | 2013-12-11 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
| KR101217574B1 (ko) * | 2009-06-16 | 2013-01-18 | 한국전자통신연구원 | 나노선 메모리 |
| WO2011125806A1 (en) * | 2010-04-09 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4880283A (https=) * | 1972-01-28 | 1973-10-27 | ||
| JPH07283369A (ja) * | 1994-04-14 | 1995-10-27 | Toyota Motor Corp | 薄膜抵抗及びその製造方法 |
| JP4538693B2 (ja) * | 1998-01-26 | 2010-09-08 | ソニー株式会社 | メモリ素子およびその製造方法 |
| JP2001085545A (ja) * | 1999-09-16 | 2001-03-30 | Sony Corp | メモリ素子の製造方法 |
| GB2364823A (en) * | 2000-07-12 | 2002-02-06 | Seiko Epson Corp | TFT memory device having gate insulator with charge-trapping granules |
| JP3983105B2 (ja) * | 2002-05-29 | 2007-09-26 | Ｎｅｃエレクトロニクス株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP4563652B2 (ja) * | 2003-03-13 | 2010-10-13 | シャープ株式会社 | メモリ機能体および微粒子形成方法並びにメモリ素子、半導体装置および電子機器 |
-
2005
- 2005-06-08 JP JP2005168061A patent/JP4657016B2/ja not_active Expired - Fee Related
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