JP4657016B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4657016B2
JP4657016B2 JP2005168061A JP2005168061A JP4657016B2 JP 4657016 B2 JP4657016 B2 JP 4657016B2 JP 2005168061 A JP2005168061 A JP 2005168061A JP 2005168061 A JP2005168061 A JP 2005168061A JP 4657016 B2 JP4657016 B2 JP 4657016B2
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Japan
Prior art keywords
insulating film
film
silicon
gate electrode
substrate
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Expired - Fee Related
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JP2005168061A
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Japanese (ja)
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JP2006032917A5 (https=
JP2006032917A (ja
Inventor
哲司 山口
肇 徳永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005168061A priority Critical patent/JP4657016B2/ja
Publication of JP2006032917A publication Critical patent/JP2006032917A/ja
Publication of JP2006032917A5 publication Critical patent/JP2006032917A5/ja
Application granted granted Critical
Publication of JP4657016B2 publication Critical patent/JP4657016B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2005168061A 2004-06-14 2005-06-08 半導体装置の作製方法 Expired - Fee Related JP4657016B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005168061A JP4657016B2 (ja) 2004-06-14 2005-06-08 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004176189 2004-06-14
JP2005168061A JP4657016B2 (ja) 2004-06-14 2005-06-08 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006032917A JP2006032917A (ja) 2006-02-02
JP2006032917A5 JP2006032917A5 (https=) 2008-05-29
JP4657016B2 true JP4657016B2 (ja) 2011-03-23

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ID=35898835

Family Applications (1)

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JP2005168061A Expired - Fee Related JP4657016B2 (ja) 2004-06-14 2005-06-08 半導体装置の作製方法

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JP (1) JP4657016B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9953259B2 (en) 2004-10-08 2018-04-24 Thin Film Electronics, Asa RF and/or RF identification tag/device having an integrated interposer, and methods for making and using the same
JP2007213461A (ja) * 2006-02-13 2007-08-23 Dainippon Printing Co Ltd Ｉｃタグラベル
JP2008072087A (ja) * 2006-08-16 2008-03-27 Kyoto Univ 半導体装置および半導体装置の製造方法、ならびに表示装置
US7851277B2 (en) * 2006-12-05 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
US7791172B2 (en) 2007-03-19 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP2009048371A (ja) * 2007-08-17 2009-03-05 Kovio Inc 集積化インタポーザを有するｒｆタグ／装置及／又はびｒｆｉｄタグ／装置、並びにその製造方法及び使用方法
JP5364407B2 (ja) * 2009-03-24 2013-12-11 株式会社東芝 不揮発性記憶装置及びその製造方法
KR101217574B1 (ko) * 2009-06-16 2013-01-18 한국전자통신연구원 나노선 메모리
WO2011125806A1 (en) * 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4880283A (https=) * 1972-01-28 1973-10-27
JPH07283369A (ja) * 1994-04-14 1995-10-27 Toyota Motor Corp 薄膜抵抗及びその製造方法
JP4538693B2 (ja) * 1998-01-26 2010-09-08 ソニー株式会社 メモリ素子およびその製造方法
JP2001085545A (ja) * 1999-09-16 2001-03-30 Sony Corp メモリ素子の製造方法
GB2364823A (en) * 2000-07-12 2002-02-06 Seiko Epson Corp TFT memory device having gate insulator with charge-trapping granules
JP3983105B2 (ja) * 2002-05-29 2007-09-26 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法
JP4563652B2 (ja) * 2003-03-13 2010-10-13 シャープ株式会社 メモリ機能体および微粒子形成方法並びにメモリ素子、半導体装置および電子機器

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Publication number Publication date
JP2006032917A (ja) 2006-02-02

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