JP2006032541A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2006032541A
JP2006032541A JP2004207205A JP2004207205A JP2006032541A JP 2006032541 A JP2006032541 A JP 2006032541A JP 2004207205 A JP2004207205 A JP 2004207205A JP 2004207205 A JP2004207205 A JP 2004207205A JP 2006032541 A JP2006032541 A JP 2006032541A
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JP
Japan
Prior art keywords
film
gate electrode
nitride film
semiconductor device
oxide film
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Pending
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JP2004207205A
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English (en)
Japanese (ja)
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JP2006032541A5 (enExample
Inventor
Jun Sumino
潤 角野
Satoru Shimizu
悟 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004207205A priority Critical patent/JP2006032541A/ja
Publication of JP2006032541A publication Critical patent/JP2006032541A/ja
Publication of JP2006032541A5 publication Critical patent/JP2006032541A5/ja
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004207205A 2004-07-14 2004-07-14 半導体装置 Pending JP2006032541A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004207205A JP2006032541A (ja) 2004-07-14 2004-07-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004207205A JP2006032541A (ja) 2004-07-14 2004-07-14 半導体装置

Publications (2)

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JP2006032541A true JP2006032541A (ja) 2006-02-02
JP2006032541A5 JP2006032541A5 (enExample) 2007-08-23

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ID=35898545

Family Applications (1)

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JP2004207205A Pending JP2006032541A (ja) 2004-07-14 2004-07-14 半導体装置

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JP (1) JP2006032541A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9461138B2 (en) 2012-02-28 2016-10-04 Seiko Epson Corporation Non-volatile semiconductor memory with nitride sidewall contacting nitride layer of ONO gate stack and methods for producing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144787A (ja) * 1996-11-07 1998-05-29 Fujitsu Ltd 半導体装置及びその製造方法
JP2002252232A (ja) * 2001-02-13 2002-09-06 Samsung Electronics Co Ltd 多重膜よりなるスぺーサを有する半導体素子及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144787A (ja) * 1996-11-07 1998-05-29 Fujitsu Ltd 半導体装置及びその製造方法
JP2002252232A (ja) * 2001-02-13 2002-09-06 Samsung Electronics Co Ltd 多重膜よりなるスぺーサを有する半導体素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9461138B2 (en) 2012-02-28 2016-10-04 Seiko Epson Corporation Non-volatile semiconductor memory with nitride sidewall contacting nitride layer of ONO gate stack and methods for producing the same

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