JP2006019703A - 差動/二重cpp磁気センサ - Google Patents
差動/二重cpp磁気センサ Download PDFInfo
- Publication number
- JP2006019703A JP2006019703A JP2005119113A JP2005119113A JP2006019703A JP 2006019703 A JP2006019703 A JP 2006019703A JP 2005119113 A JP2005119113 A JP 2005119113A JP 2005119113 A JP2005119113 A JP 2005119113A JP 2006019703 A JP2006019703 A JP 2006019703A
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- magnetic sensor
- magnetic
- layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/265—Structure or manufacture of a head with more than one gap for erasing, recording or reproducing on the same track
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
- G11B5/397—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read with a plurality of independent magnetoresistive active read-out elements for respectively transducing from selected components
- G11B5/3974—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read with a plurality of independent magnetoresistive active read-out elements for respectively transducing from selected components from the same information track, e.g. frequency bands
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3945—Heads comprising more than one sensitive element
- G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
- G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
- G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
Abstract
【解決手段】この磁気センサ300は、底部電極302と、底部電極302上に配置された第1のセンサ308とを含む。磁気センサ300はまた、第1のセンサ308上に配置された中央電極304と、中央電極304上に配置された第2のセンサ310と、第2のセンサ310上に配置された頂部電極306とを含む。底部電極302、中央電極304および頂部電極306は、第1のセンサ308および第2のセンサ310を電気的に並列に接続するために利用される。
【選択図】図3−1
Description
本発明は、磁気媒体から情報を読取るための磁気センサを提供する。この磁気センサは、底部電極と、底部電極上に配置された第1のセンサとを含む。磁気センサはまた、第1のセンサ上に配置された中央電極と、中央電極上に配置された第2のセンサと、第2のセンサ上に配置された頂部電極とを含む。底部電極、中央電極および頂部電極は、第1のセンサと第2のセンサとを電気的に並列に接続するために用いられる。
本発明の実施例を特徴づける他の特徴および利点は、以下の詳細な説明を読み関連する図面を点検する時、明らかとなろう。
302 底部電極
304 中央電極
306 頂部電極
308 第1のセンサ
310 第2のセンサ
314 差動リードバック信号
400 磁気センサ
408 第1のスペーサ層
412 第2のスペーサ層
500 磁気センサ
600 磁気センサ
Claims (20)
- 情報を読取るための磁気センサにおいて、該磁気センサは、
底部電極と、
前記底部電極上に配置された第1のセンサと、
前記第1のセンサ上に配置された中央電極と、
前記中央電極上に配置された第2のセンサと、
前記第2のセンサ上に配置された頂部電極と、を含み、
前記底部電極、前記中央電極および前記頂部電極は、前記第1のセンサおよび前記第2のセンサを電気的に並列に接続するために利用される、
前記磁気センサ。 - 前記底部電極、前記第1のセンサ、前記中央電極、前記第2のセンサおよび前記頂部電極は、差動リードバック信号が発生されるように配置されている請求項1記載の磁気センサ。
- 前記第1のセンサおよび前記第2のセンサのそれぞれは、導電性金属から形成されたスペーサ層を含む請求項1記載の磁気センサ。
- 前記導電性金属は、銅(Cu)、銀(Ag)および金(Au)から成るグループから選択される請求項3記載の磁気センサ。
- 前記第1のセンサおよび前記第2のセンサのそれぞれは、実質的絶縁性材料から形成されたバリヤ層であるスペーサ層を含む請求項1記載の磁気センサ。
- 前記実質的絶縁性材料は、酸化アルミニウムおよび酸化チタンから成るグループから選択される請求項5記載の磁気センサ。
- 前記底部電極および前記頂部電極は、シングルエンド・リードバック信号を発生するように互いに電気的に結合されている請求項1記載の磁気センサ。
- 検出電流は前記第1のセンサおよび前記第2のセンサの諸層の表面に実質的に垂直に流れる請求項1記載の磁気センサ。
- 情報を読取るための磁気センサにおいて、該磁気センサは、
第1のセンサと、
第2のセンサと、
前記第1のセンサおよび前記第2のセンサを電気的に並列に接続するために用いられる3つの電極と、
を含む前記磁気センサ。 - 前記3つの電極の第1のものは底部電極であり、前記3つの電極の第2のものは中央電極であり、前記3つの電極の第3のものは頂部電極であり、前記第1のセンサは前記底部電極と前記中央電極との間に配置され、前記第2のセンサは前記中央電極と前記頂部電極との間に配置されている請求項9記載の磁気センサ。
- 前記第1のセンサ、前記第2のセンサおよび前記3つの電極は、差動リードバック信号が発生されるように配置されている請求項9記載の磁気センサ。
- 前記第1のセンサおよび前記第2のセンサのそれぞれは、導電性金属から形成されたスペーサ層を含む請求項9記載の磁気センサ。
- 前記導電性金属は、銅(Cu)、銀(Ag)および金(Au)から成るグループから選択される請求項12記載の磁気センサ。
- 前記第1のセンサおよび前記第2のセンサのそれぞれは、実質的絶縁性材料から形成されたバリヤ層であるスペーサ層を含む請求項9記載の磁気センサ。
- 前記実質的絶縁性材料は、酸化アルミニウムおよび酸化チタンから成るグループから選択される請求項14記載の磁気センサ。
- 前記3つの電極の2つは、シングルエンド・リードバック信号を発生するように互いに電気的に結合されている請求項9記載の磁気センサ。
- 検出電流は前記第1のセンサおよび前記第2のセンサの諸層の表面に実質的に垂直に流れる請求項9記載の磁気センサ。
- 情報を読取るための磁気センサにおいて、該磁気センサは、
信号界を検出するための第1の検出手段と、
信号界を検出するための第2の検出手段と、を含み、
前記第1の検出手段および前記第2の検出手段は電気的に並列に接続されている、
前記磁気センサ。 - 前記第1の検出手段および前記第2の検出手段のそれぞれは、導電性金属から形成されたスペーサ層を含む請求項18記載の磁気センサ。
- 前記第1の検出手段および前記第2の検出手段のそれぞれは、実質的絶縁性材料から形成されたバリヤ層であるスペーサ層を含む請求項18記載の磁気センサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/880,879 US7436632B2 (en) | 2004-06-30 | 2004-06-30 | Differential/dual CPP recording head |
US10/880879 | 2004-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006019703A true JP2006019703A (ja) | 2006-01-19 |
JP5014583B2 JP5014583B2 (ja) | 2012-08-29 |
Family
ID=35513618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005119113A Expired - Fee Related JP5014583B2 (ja) | 2004-06-30 | 2005-04-18 | 差動/二重cpp磁気センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US7436632B2 (ja) |
JP (1) | JP5014583B2 (ja) |
MY (1) | MY139519A (ja) |
SG (1) | SG118306A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012212478A (ja) * | 2011-03-30 | 2012-11-01 | Toshiba Corp | 磁気ヘッド |
JP2015185183A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社東芝 | 磁気ヘッド、磁気記録再生装置、および磁気ヘッドの製造方法 |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4079279B2 (ja) * | 2003-08-26 | 2008-04-23 | 富士通株式会社 | 再生ヘッド及び磁気ディスク装置 |
US7382589B2 (en) * | 2004-11-18 | 2008-06-03 | Headway Technologies, Inc. | CPP with elongated pinned layer |
US7423826B2 (en) * | 2006-03-10 | 2008-09-09 | Seagate Technology Llc | Readback system providing a combined sample output including multiple samples per bit |
US20080097407A1 (en) * | 2006-10-18 | 2008-04-24 | Michael Plishka | Luer activated device with compressible valve element |
US7881018B2 (en) * | 2007-09-05 | 2011-02-01 | Hitachi Global Storage Technologies Netherlands B.V. | Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise |
US8233247B2 (en) * | 2008-04-11 | 2012-07-31 | Hitachi Global Storage Technologies Netherlands B.V. | Scissoring-type current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with damped free layer structures |
US8411392B2 (en) * | 2008-06-24 | 2013-04-02 | Seagate Technology Llc | Magnetic field sensor including multiple magnetoresistive sensing elements for patterned media |
US7985994B2 (en) * | 2008-09-29 | 2011-07-26 | Seagate Technology Llc | Flux-closed STRAM with electronically reflective insulative spacer |
US8169810B2 (en) * | 2008-10-08 | 2012-05-01 | Seagate Technology Llc | Magnetic memory with asymmetric energy barrier |
JP5383145B2 (ja) * | 2008-10-15 | 2014-01-08 | エイチジーエスティーネザーランドビーブイ | 磁気再生ヘッド |
US8018691B2 (en) | 2008-10-20 | 2011-09-13 | Hitachi Global Storage Technologies Netherlands B.V. | CPP dual free layer magnetoresistive head for magnetic data storage |
US8139301B1 (en) | 2009-07-22 | 2012-03-20 | Western Digital (Fremont), Llc | Disk drive comprising a dual read element and delay circuitry to improve read signal |
US8659853B2 (en) * | 2009-09-07 | 2014-02-25 | Agency For Science, Technology And Research | Sensor arrangement |
US8582250B2 (en) * | 2009-12-04 | 2013-11-12 | Seagate Technology Llc | Double biasing for trilayer MR sensors |
US8724242B2 (en) | 2011-02-02 | 2014-05-13 | Seagate Technology Llc | Compensation for cross-track deviation |
US8508880B2 (en) | 2011-02-16 | 2013-08-13 | Seagate Technology Llc | Transducer head with multiple read sensors |
US8711517B2 (en) | 2012-04-27 | 2014-04-29 | Seagate Technology Llc | Two dimensional magnetic sensor immune to skew angle misalignment |
US20140177102A1 (en) | 2012-12-21 | 2014-06-26 | Seagate Technology Llc | Multi-reader method and apparatus |
WO2014176451A1 (en) * | 2013-04-24 | 2014-10-30 | Trustees Of Tufts College | Bioresorbable biopolymer stent |
US8824106B1 (en) * | 2013-05-18 | 2014-09-02 | Headway Technologies, Inc. | Two sensor reader for hard disk drive (HDD) |
US9431039B1 (en) | 2013-05-21 | 2016-08-30 | Western Digital (Fremont), Llc | Multiple sensor array usable in two-dimensional magnetic recording |
US8891207B1 (en) | 2013-06-07 | 2014-11-18 | Western Digital (Fremont), Llc | Connection schemes for a multiple sensor array usable in two-dimensional magnetic recording |
US9147431B2 (en) | 2013-08-06 | 2015-09-29 | Seagate Technology Llc | Multi-sensor data transducer |
US8908333B1 (en) | 2013-08-13 | 2014-12-09 | Western Digital (Fremont), Llc | Shield designed for middle shields in a multiple sensor array |
US9431032B1 (en) | 2013-08-14 | 2016-08-30 | Western Digital (Fremont), Llc | Electrical connection arrangement for a multiple sensor array usable in two-dimensional magnetic recording |
US9190082B2 (en) * | 2013-08-28 | 2015-11-17 | Seagate Technology, Llc | Dual reader structure |
US9190078B2 (en) | 2013-08-30 | 2015-11-17 | Seagate Technology Llc | Dual reader structure |
US9135935B1 (en) | 2013-10-11 | 2015-09-15 | Western Digital Technologies, Inc. | Customized head gimbal assembly bonding skew angle for adjusting two-dimensional magnetic recording reader alignment |
US9042058B1 (en) | 2013-10-17 | 2015-05-26 | Western Digital Technologies, Inc. | Shield designed for middle shields in a multiple sensor array |
US8988812B1 (en) | 2013-11-27 | 2015-03-24 | Western Digital (Fremont), Llc | Multi-sensor array configuration for a two-dimensional magnetic recording (TDMR) operation |
US9257145B1 (en) | 2013-11-27 | 2016-02-09 | Western Digital Technologies, Inc. | Disk drive measuring down-track spacing of read sensors |
US9099122B2 (en) | 2013-12-02 | 2015-08-04 | HGST Netherlands B.V. | Scissor sensor with back edge bias structure and novel dielectric layer |
US9230578B2 (en) * | 2013-12-23 | 2016-01-05 | HGST Netherlands B.V. | Multiple readers for high resolution and SNR for high areal density application |
US8970988B1 (en) | 2013-12-31 | 2015-03-03 | Western Digital (Fremont), Llc | Electric gaps and method for making electric gaps for multiple sensor arrays |
US9406321B2 (en) * | 2014-02-27 | 2016-08-02 | Seagate Technology Llc | Read head with multiple reader stacks |
US9070406B1 (en) | 2014-03-10 | 2015-06-30 | Western Digital Technologies, Inc. | Disk drive configuring one-dimensional and two-dimensional recording areas based on read element spacing |
US9245556B2 (en) | 2014-03-10 | 2016-01-26 | Western Digital Technologies, Inc. | Disk drive employing multiple read elements to increase radial band for two-dimensional magnetic recording |
US20150342760A1 (en) * | 2014-06-02 | 2015-12-03 | Boston Scientific Scimed Inc. | Anti-migration stent |
US9053727B1 (en) | 2014-06-02 | 2015-06-09 | Western Digital Technologies, Inc. | Disk drive opening spiral crossing window based on DC and AC spiral track error |
US9013824B1 (en) | 2014-06-04 | 2015-04-21 | Western Digital Technologies, Inc. | Data storage device comprising dual read sensors and dual servo channels to improve servo demodulation |
US9401163B2 (en) | 2014-07-03 | 2016-07-26 | Seagate Technology Llc | Multi-stack reader with split middle shield |
US9361910B2 (en) | 2014-07-03 | 2016-06-07 | Seagate Technology Llc | Leads coupled to top and bottom reader stacks of a reader |
US9087527B1 (en) | 2014-10-28 | 2015-07-21 | Western Digital (Fremont), Llc | Apparatus and method for middle shield connection in magnetic recording transducers |
US9786301B1 (en) | 2014-12-02 | 2017-10-10 | Western Digital (Fremont), Llc | Apparatuses and methods for providing thin shields in a multiple sensor array |
US9721595B1 (en) * | 2014-12-04 | 2017-08-01 | Western Digital (Fremont), Llc | Method for providing a storage device |
US9373355B1 (en) | 2015-01-30 | 2016-06-21 | Seagate Technology Llc | Compensating for interference via a multi-reader system |
US9685177B2 (en) * | 2015-07-08 | 2017-06-20 | Seagate Technology Llc | Sensor stabilization in a multiple sensor magnetic reproducing device |
US10470906B2 (en) * | 2015-09-15 | 2019-11-12 | Merit Medical Systems, Inc. | Implantable device delivery system |
US11489108B2 (en) | 2020-04-28 | 2022-11-01 | Western Digital Technologies, Inc. | BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation |
US11495741B2 (en) | 2020-06-30 | 2022-11-08 | Western Digital Technologies, Inc. | Bismuth antimony alloys for use as topological insulators |
US11100946B1 (en) | 2020-07-01 | 2021-08-24 | Western Digital Technologies, Inc. | SOT differential reader and method of making same |
US11094338B1 (en) | 2020-07-09 | 2021-08-17 | Western Digital Technologies, Inc. | SOT film stack for differential reader |
US11222656B1 (en) * | 2020-07-09 | 2022-01-11 | Western Digital Technologies, Inc. | Method to reduce baseline shift for a SOT differential reader |
US11763973B2 (en) | 2021-08-13 | 2023-09-19 | Western Digital Technologies, Inc. | Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devices |
US11532323B1 (en) | 2021-08-18 | 2022-12-20 | Western Digital Technologies, Inc. | BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices |
US11875827B2 (en) | 2022-03-25 | 2024-01-16 | Western Digital Technologies, Inc. | SOT reader using BiSb topological insulator |
US11783853B1 (en) | 2022-05-31 | 2023-10-10 | Western Digital Technologies, Inc. | Topological insulator based spin torque oscillator reader |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001313377A (ja) * | 2000-03-09 | 2001-11-09 | Hewlett Packard Co <Hp> | メモリセル装置及びその製造方法 |
JP2002204010A (ja) * | 2000-08-21 | 2002-07-19 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子 |
JP2002529926A (ja) * | 1998-11-09 | 2002-09-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 磁気トンネル接合センサを使用するサーマル・アスペリティ低減回路を有するディスク・ドライブ |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US184918A (en) * | 1876-11-28 | Improvement in hand-protectors for broom-handles | ||
US135946A (en) * | 1873-02-18 | Improvement in dinner-pails | ||
US17639A (en) * | 1857-06-23 | Hardehsting axes | ||
US3448440A (en) * | 1965-12-17 | 1969-06-03 | Wiegand Electronics Co Inc | Interceptor transformer proximity key |
DE2647818C2 (de) * | 1976-10-22 | 1985-02-14 | Robert Bosch Gmbh, 7000 Stuttgart | Einrichtung zur Abgabe eines elektrischen Signales |
US4075671A (en) * | 1976-11-24 | 1978-02-21 | International Business Machines Corporation | Automatic ac biasing of a magnetoresistive element |
DE2654755A1 (de) * | 1976-12-03 | 1978-06-08 | Bosch Gmbh Robert | Induktiver impulsgeber mit drehzahlunabhaengiger impulsamplitude |
US4374403A (en) * | 1979-06-27 | 1983-02-15 | Matsushita Electric Industrial Co., Ltd. | Magnetic recording and reproducing system |
US5668688A (en) * | 1996-05-24 | 1997-09-16 | Quantum Peripherals Colorado, Inc. | Current perpendicular-to-the-plane spin valve type magnetoresistive transducer |
US6005753A (en) * | 1998-05-29 | 1999-12-21 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias |
US6275363B1 (en) * | 1999-07-23 | 2001-08-14 | International Business Machines Corporation | Read head with dual tunnel junction sensor |
US6445171B2 (en) * | 1999-10-29 | 2002-09-03 | Honeywell Inc. | Closed-loop magnetoresistive current sensor system having active offset nulling |
US6473275B1 (en) * | 2000-06-06 | 2002-10-29 | International Business Machines Corporation | Dual hybrid magnetic tunnel junction/giant magnetoresistive sensor |
US6670809B1 (en) * | 2000-08-18 | 2003-12-30 | The United States Of America As Represented By The Secretary Of The Army | Magnetic sensor with modulating flux concentrator having minimized air resistance for 1/f noise reduction |
US7019924B2 (en) * | 2001-02-16 | 2006-03-28 | Komag, Incorporated | Patterned medium and recording head |
US6633461B2 (en) * | 2001-03-20 | 2003-10-14 | Hitachi Global Storage Technologies Netherlands B.V. | Dual tunnel junction sensor antiferromagnetic layer between pinned layers |
US6661620B2 (en) * | 2001-08-28 | 2003-12-09 | Seagate Technology Llc | Differential CPP sensor |
US6751072B2 (en) * | 2002-03-21 | 2004-06-15 | Hitachi Global Storage Technologies Netherlands B.V. | High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure |
US6741432B2 (en) * | 2002-03-21 | 2004-05-25 | International Business Machines Corporation | Current perpendicular to the planes (CPP) spin valve sensor with in-stack biased free layer and self-pinned antiparallel (AP) pinned layer structure |
US7161771B2 (en) | 2002-04-02 | 2007-01-09 | Hitachi Global Storage Technologies Netherlands B.V. | Dual spin valve sensor with a longitudinal bias stack |
US6781798B2 (en) * | 2002-07-15 | 2004-08-24 | International Business Machines Corporation | CPP sensor with dual self-pinned AP pinned layer structures |
US7196882B2 (en) | 2002-07-23 | 2007-03-27 | Micron Technology, Inc. | Magnetic tunnel junction device and its method of fabrication |
US6819530B2 (en) * | 2002-09-25 | 2004-11-16 | International Business Machines Corporation | Current perpendicular to the planes (CPP) sensor with free layer stabilized by current field |
US6927948B2 (en) * | 2003-01-23 | 2005-08-09 | Hitachi Global Storage Technologies Netherlands B.V. | Differential CPP GMR sensor with free layers separated by metal gap layer |
-
2004
- 2004-06-30 US US10/880,879 patent/US7436632B2/en not_active Expired - Fee Related
-
2005
- 2005-02-25 SG SG200501164A patent/SG118306A1/en unknown
- 2005-02-28 MY MYPI20050803A patent/MY139519A/en unknown
- 2005-04-18 JP JP2005119113A patent/JP5014583B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002529926A (ja) * | 1998-11-09 | 2002-09-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 磁気トンネル接合センサを使用するサーマル・アスペリティ低減回路を有するディスク・ドライブ |
JP2001313377A (ja) * | 2000-03-09 | 2001-11-09 | Hewlett Packard Co <Hp> | メモリセル装置及びその製造方法 |
JP2002204010A (ja) * | 2000-08-21 | 2002-07-19 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012212478A (ja) * | 2011-03-30 | 2012-11-01 | Toshiba Corp | 磁気ヘッド |
US8553358B2 (en) | 2011-03-30 | 2013-10-08 | Kabushiki Kaisha Toshiba | Magnetic head |
JP2015185183A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社東芝 | 磁気ヘッド、磁気記録再生装置、および磁気ヘッドの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060002032A1 (en) | 2006-01-05 |
US7436632B2 (en) | 2008-10-14 |
MY139519A (en) | 2009-10-30 |
SG118306A1 (en) | 2006-01-27 |
JP5014583B2 (ja) | 2012-08-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5014583B2 (ja) | 差動/二重cpp磁気センサ | |
US10777222B1 (en) | Two-dimensional magnetic recording (TDMR) read head structure with different stacked sensors and disk drive incorporating the structure | |
CN110418973B (zh) | 使用自旋霍尔效应的磁传感器 | |
US6259586B1 (en) | Magnetic tunnel junction sensor with AP-coupled free layer | |
JP3233396B2 (ja) | 磁気トンネル接合センサおよびディスク・ドライブ・システム | |
JP3717751B2 (ja) | 磁気読取りヘッド、磁気ヘッド・アセンブリおよび磁気ディスク・ドライブ | |
US6888705B2 (en) | High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS) | |
US7467459B2 (en) | Method for manufacturing a current in plane magnetoresistive sensor having a contiguous hard bias layer located at back edge of stripe height | |
US7054117B2 (en) | Method of making a read head having a tunnel junction sensor with a free layer biased by exchange coupling with insulating antiferromagnetic (AFM) layers | |
US20060232893A1 (en) | Current in plane magnetoresistive sensor having a contiguous hard bias layer located at back edge of stripe height | |
JP2011070759A (ja) | パターンド媒体用の複数の検出素子を有する面垂直電流(cpp)型磁気抵抗読取ヘッド | |
US6757144B2 (en) | Flux guide read head with in stack biased current perpendicular to the planes (CPP) sensor | |
US6927948B2 (en) | Differential CPP GMR sensor with free layers separated by metal gap layer | |
JP2002304711A (ja) | シールド型磁気トンネル接合磁気抵抗読取りヘッド及びアセンブリ | |
JP2004192794A (ja) | スピンバルブ(sv)センサ、磁気読み出し/書き込みヘッド、ディスクドライブシステム、およびスピンバルブ(sv)センサの製造方法 | |
US20050243474A1 (en) | Self-pinned dual CPP sensor exchange pinned at stripe back-end to avoid amplitude flipping | |
WO2002054097A2 (en) | A spin valve magnetoresistive sensor | |
JP2007250085A (ja) | 薄膜磁気ヘッド及び該薄膜磁気ヘッドの製造方法 | |
US7848061B2 (en) | Current perpendicular to plane (CPP) magnetoresistive sensor with back flux guide | |
JP4191574B2 (ja) | 逆平行結合された導線/センサ重複領域を有する磁気抵抗センサ | |
JP2014225318A (ja) | 幅を低減した上部電極及び下部電極を有する平面垂直通電(cpp)磁気抵抗センサ並びにその製造方法 | |
US7038890B2 (en) | Current perpendicular to the planes (CPP) sensor with a highly conductive cap structure | |
US10249329B1 (en) | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with wedge shaped free layer | |
US7133264B2 (en) | High resistance sense current perpendicular-to-plane (CPP) giant magnetoresistive (GMR) head | |
US7359161B2 (en) | Magnetic sensor that combines both CPP and CIP modes of operation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080123 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20100526 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110308 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110608 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110920 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111219 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111222 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120119 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120124 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120217 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120316 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120508 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120606 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150615 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |