JP2006005287A - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
- Publication number
- JP2006005287A JP2006005287A JP2004182339A JP2004182339A JP2006005287A JP 2006005287 A JP2006005287 A JP 2006005287A JP 2004182339 A JP2004182339 A JP 2004182339A JP 2004182339 A JP2004182339 A JP 2004182339A JP 2006005287 A JP2006005287 A JP 2006005287A
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- JP
- Japan
- Prior art keywords
- plasma
- wafer
- substrate
- discharge
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims description 89
- 238000003672 processing method Methods 0.000 title description 16
- 238000012545 processing Methods 0.000 claims abstract description 71
- 239000007789 gas Substances 0.000 claims abstract description 49
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 64
- 229910052751 metal Inorganic materials 0.000 abstract description 55
- 239000002184 metal Substances 0.000 abstract description 55
- 230000003647 oxidation Effects 0.000 abstract description 35
- 238000007254 oxidation reaction Methods 0.000 abstract description 35
- 238000000034 method Methods 0.000 abstract description 26
- 238000005121 nitriding Methods 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000012423 maintenance Methods 0.000 abstract description 13
- 238000004140 cleaning Methods 0.000 abstract description 9
- 208000028659 discharge Diseases 0.000 description 73
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 238000005259 measurement Methods 0.000 description 10
- 238000011282 treatment Methods 0.000 description 10
- 239000011734 sodium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 229910052700 potassium Inorganic materials 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
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- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004182339A JP2006005287A (ja) | 2004-06-21 | 2004-06-21 | 基板処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004182339A JP2006005287A (ja) | 2004-06-21 | 2004-06-21 | 基板処理方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009032671A Division JP2009152624A (ja) | 2009-02-16 | 2009-02-16 | 基板処理方法及び半導体製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006005287A true JP2006005287A (ja) | 2006-01-05 |
| JP2006005287A5 JP2006005287A5 (enExample) | 2007-07-26 |
Family
ID=35773373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004182339A Pending JP2006005287A (ja) | 2004-06-21 | 2004-06-21 | 基板処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006005287A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007288069A (ja) * | 2006-04-19 | 2007-11-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
| JP2008543091A (ja) * | 2005-06-02 | 2008-11-27 | アプライド マテリアルズ インコーポレイテッド | 酸化物膜に窒素を組込むための方法及び装置 |
| JP2009524222A (ja) * | 2006-01-18 | 2009-06-25 | オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト | 円板状の基板の脱ガスをする装置 |
| US9257271B2 (en) | 2012-03-26 | 2016-02-09 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method, substrate processing apparatus, and non-transitory recording medium |
| WO2021161824A1 (ja) * | 2020-02-14 | 2021-08-19 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
-
2004
- 2004-06-21 JP JP2004182339A patent/JP2006005287A/ja active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008543091A (ja) * | 2005-06-02 | 2008-11-27 | アプライド マテリアルズ インコーポレイテッド | 酸化物膜に窒素を組込むための方法及び装置 |
| US8375892B2 (en) | 2005-06-02 | 2013-02-19 | Applied Materials, Inc. | Methods and apparatus for incorporating nitrogen in oxide films |
| US8658522B2 (en) | 2005-06-02 | 2014-02-25 | Applied Materials, Inc. | Methods and apparatus for incorporating nitrogen in oxide films |
| JP2009524222A (ja) * | 2006-01-18 | 2009-06-25 | オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト | 円板状の基板の脱ガスをする装置 |
| JP2007288069A (ja) * | 2006-04-19 | 2007-11-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
| US9257271B2 (en) | 2012-03-26 | 2016-02-09 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method, substrate processing apparatus, and non-transitory recording medium |
| WO2021161824A1 (ja) * | 2020-02-14 | 2021-08-19 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
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