JP2005535113A5 - - Google Patents

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Publication number
JP2005535113A5
JP2005535113A5 JP2004524517A JP2004524517A JP2005535113A5 JP 2005535113 A5 JP2005535113 A5 JP 2005535113A5 JP 2004524517 A JP2004524517 A JP 2004524517A JP 2004524517 A JP2004524517 A JP 2004524517A JP 2005535113 A5 JP2005535113 A5 JP 2005535113A5
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JP
Japan
Prior art keywords
distance
shield structure
conductive shield
semiconductor substrate
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004524517A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005535113A (ja
Filing date
Publication date
Priority claimed from US10/209,816 external-priority patent/US6870219B2/en
Application filed filed Critical
Publication of JP2005535113A publication Critical patent/JP2005535113A/ja
Publication of JP2005535113A5 publication Critical patent/JP2005535113A5/ja
Pending legal-status Critical Current

Links

JP2004524517A 2002-07-31 2003-06-16 電界効果トランジスタとその製造方法 Pending JP2005535113A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/209,816 US6870219B2 (en) 2002-07-31 2002-07-31 Field effect transistor and method of manufacturing same
PCT/US2003/018938 WO2004012270A2 (en) 2002-07-31 2003-06-16 Field effect transistor and method of manufacturing same

Publications (2)

Publication Number Publication Date
JP2005535113A JP2005535113A (ja) 2005-11-17
JP2005535113A5 true JP2005535113A5 (cg-RX-API-DMAC7.html) 2006-08-10

Family

ID=31187146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004524517A Pending JP2005535113A (ja) 2002-07-31 2003-06-16 電界効果トランジスタとその製造方法

Country Status (7)

Country Link
US (1) US6870219B2 (cg-RX-API-DMAC7.html)
EP (1) EP1525622A2 (cg-RX-API-DMAC7.html)
JP (1) JP2005535113A (cg-RX-API-DMAC7.html)
CN (1) CN1672263A (cg-RX-API-DMAC7.html)
AU (1) AU2003281740A1 (cg-RX-API-DMAC7.html)
TW (1) TWI311813B (cg-RX-API-DMAC7.html)
WO (1) WO2004012270A2 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8933486B2 (en) 2006-11-13 2015-01-13 Cree, Inc. GaN based HEMTs with buried field plates

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004095577A2 (en) * 2003-04-22 2004-11-04 Koninklijke Philips Electronics N.V. Semiconductor device comprising a field-effect transistor and method of operating the same
CN100555661C (zh) * 2003-08-27 2009-10-28 Nxp股份有限公司 包括ldmos晶体管的电子器件
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
JP2007505505A (ja) 2004-01-10 2007-03-08 エイチブイブイアイ・セミコンダクターズ・インコーポレイテッド パワー半導体装置およびそのための方法
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
DE602004032539D1 (de) * 2004-09-08 2011-06-16 St Microelectronics Srl Laterale MOS-Anordnung und Verfahren zu deren Herstellung
US8530963B2 (en) 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US8564057B1 (en) * 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
JP2009164651A (ja) * 2009-04-24 2009-07-23 Sanyo Electric Co Ltd 半導体装置
US8253198B2 (en) * 2009-07-30 2012-08-28 Micron Technology Devices for shielding a signal line over an active region
CN102237276B (zh) * 2010-04-22 2014-04-16 上海华虹宏力半导体制造有限公司 射频ldmos器件的制造方法
EP2383786B1 (en) * 2010-04-29 2018-08-15 Ampleon Netherlands B.V. Semiconductor transistor comprising two electrically conductive shield elements
JP2011249728A (ja) * 2010-05-31 2011-12-08 Toshiba Corp 半導体装置および半導体装置の製造方法
US20120175679A1 (en) * 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置
US8680615B2 (en) 2011-12-13 2014-03-25 Freescale Semiconductor, Inc. Customized shield plate for a field effect transistor
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
JP6242118B2 (ja) * 2013-08-29 2017-12-06 オリンパス株式会社 スイッチ回路、サンプルホールド回路、および固体撮像装置
US9853145B1 (en) * 2016-10-04 2017-12-26 Vanguard International Semiconductor Corporation High-voltage semiconductor device and method of manufacturing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS58137256A (ja) 1982-02-10 1983-08-15 Hitachi Ltd 絶縁ゲ−ト半導体装置
US5119149A (en) 1990-10-22 1992-06-02 Motorola, Inc. Gate-drain shield reduces gate to drain capacitance
US5252848A (en) 1992-02-03 1993-10-12 Motorola, Inc. Low on resistance field effect transistor
US5898198A (en) 1997-08-04 1999-04-27 Spectrian RF power device having voltage controlled linearity
US5912490A (en) * 1997-08-04 1999-06-15 Spectrian MOSFET having buried shield plate for reduced gate/drain capacitance
US6001710A (en) 1998-03-30 1999-12-14 Spectrian, Inc. MOSFET device having recessed gate-drain shield and method
US6222229B1 (en) 1999-02-18 2001-04-24 Cree, Inc. Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
KR100282426B1 (ko) * 1999-03-17 2001-02-15 김영환 스마트 파워 소자 및 그의 제조 방법
KR100302611B1 (ko) * 1999-06-07 2001-10-29 김영환 고전압 반도체 소자 및 그 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8933486B2 (en) 2006-11-13 2015-01-13 Cree, Inc. GaN based HEMTs with buried field plates

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