JP2005519456A5 - - Google Patents

Download PDF

Info

Publication number
JP2005519456A5
JP2005519456A5 JP2003571795A JP2003571795A JP2005519456A5 JP 2005519456 A5 JP2005519456 A5 JP 2005519456A5 JP 2003571795 A JP2003571795 A JP 2003571795A JP 2003571795 A JP2003571795 A JP 2003571795A JP 2005519456 A5 JP2005519456 A5 JP 2005519456A5
Authority
JP
Japan
Prior art keywords
radiation
wavelength
photoresist material
mask
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003571795A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005519456A (ja
Filing date
Publication date
Priority claimed from US10/083,914 external-priority patent/US6764808B2/en
Application filed filed Critical
Publication of JP2005519456A publication Critical patent/JP2005519456A/ja
Publication of JP2005519456A5 publication Critical patent/JP2005519456A5/ja
Pending legal-status Critical Current

Links

JP2003571795A 2002-02-27 2003-02-21 二波長を使用した自己整合パターンの形成 Pending JP2005519456A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/083,914 US6764808B2 (en) 2002-02-27 2002-02-27 Self-aligned pattern formation using wavelenghts
PCT/US2003/004960 WO2003073165A2 (en) 2002-02-27 2003-02-21 Self-aligned pattern formation using dual wavelengths

Publications (2)

Publication Number Publication Date
JP2005519456A JP2005519456A (ja) 2005-06-30
JP2005519456A5 true JP2005519456A5 (https=) 2006-04-13

Family

ID=27753386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003571795A Pending JP2005519456A (ja) 2002-02-27 2003-02-21 二波長を使用した自己整合パターンの形成

Country Status (9)

Country Link
US (1) US6764808B2 (https=)
EP (1) EP1478978B1 (https=)
JP (1) JP2005519456A (https=)
KR (1) KR20040094706A (https=)
CN (1) CN1299166C (https=)
AU (1) AU2003211152A1 (https=)
DE (1) DE60329371D1 (https=)
TW (1) TWI278013B (https=)
WO (1) WO2003073165A2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138105A1 (de) * 2001-08-03 2003-02-27 Infineon Technologies Ag Fotolack und Verfahren zum Strukturieren eines solchen Fotolacks
US7501230B2 (en) * 2002-11-04 2009-03-10 Meagley Robert P Photoactive adhesion promoter
DE10309266B3 (de) * 2003-03-04 2005-01-13 Infineon Technologies Ag Verfahren zum Bilden einer Öffnung einer Licht absorbierenden Schicht auf einer Maske
DE10310781A1 (de) * 2003-03-12 2004-09-30 Infineon Technologies Ag Verfahren zum Betreiben eines Mikroprozessors und eine Mikroprozessoranordnung
US7265366B2 (en) * 2004-03-31 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006085741A1 (en) * 2005-02-09 2006-08-17 Stichting Dutch Polymer Institute Process for preparing a polymeric relief structure
US7816072B2 (en) * 2005-05-02 2010-10-19 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
US20070166649A1 (en) * 2006-01-18 2007-07-19 Cheng-Hung Yu Method of forming a micro device
CN100465666C (zh) * 2006-01-24 2009-03-04 联华电子股份有限公司 微元件制作方法
JP2007287928A (ja) * 2006-04-17 2007-11-01 Nec Electronics Corp 半導体集積回路およびその製造方法ならびにマスク
JP4660826B2 (ja) * 2006-08-18 2011-03-30 山栄化学株式会社 レジストパターンの形成方法
US7863150B2 (en) * 2006-09-11 2011-01-04 International Business Machines Corporation Method to generate airgaps with a template first scheme and a self aligned blockout mask
KR101023077B1 (ko) * 2008-10-27 2011-03-24 주식회사 동부하이텍 마스크 패턴 형성 방법
US9977339B2 (en) 2014-01-27 2018-05-22 Tokyo Electron Limited System and method for shifting critical dimensions of patterned films
US9645495B2 (en) 2014-08-13 2017-05-09 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
US11294273B2 (en) * 2019-10-25 2022-04-05 Innolux Corporation Mask substrate and method for forming mask substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098922A3 (en) 1982-07-13 1986-02-12 International Business Machines Corporation Process for selectively generating positive and negative resist patterns from a single exposure pattern
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
NL8500455A (nl) 1985-02-18 1986-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij een fotolakmasker wordt gevormd met behulp van een twee-laags-laksysteem.
US5180655A (en) * 1988-10-28 1993-01-19 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
JPH02269353A (ja) 1988-10-28 1990-11-02 Hewlett Packard Co <Hp> フォトリソグラフィーによる半導体の製造方法
JP3192879B2 (ja) * 1994-07-28 2001-07-30 トヨタ自動車株式会社 セラミックス製バタフライ弁およびその製造方法
JPH09319097A (ja) * 1996-01-16 1997-12-12 Sumitomo Chem Co Ltd レジストパターンの形成方法
JP3373147B2 (ja) * 1998-02-23 2003-02-04 シャープ株式会社 フォトレジスト膜及びそのパターン形成方法
FR2812450B1 (fr) 2000-07-26 2003-01-10 France Telecom Resine, bi-couche de resine pour photolithographie dans l'extreme ultraviolet (euv) et procede de photolithogravure en extreme ultraviolet (euv)
WO2003095026A1 (en) 2002-05-13 2003-11-20 Pflueger D Russell Spinal disc therapy system

Similar Documents

Publication Publication Date Title
JP2005519456A5 (https=)
CN107278278B (zh) 通过用uv-led多次曝光制造柔版印刷版的方法
CN101427348B (zh) 用于降低图案中的最小间距的方法
JP4563222B2 (ja) フレキソ印刷版の作製方法
TW200745740A (en) Mask pattern generating method
KR20180014757A (ko) 인쇄 조판 전구체, 상기 전구체의 제조 방법, 및 상기 전구체로부터의 인쇄 조판의 제조 방법
TW200615282A (en) Polymer, resist protective coating material, and patterning process
JP2002122976A5 (https=)
US20150380239A1 (en) Block co-polymer photoresist
US7655568B2 (en) Method for manufacturing underlying pattern of semiconductor device
US20090104566A1 (en) Process of multiple exposures with spin castable film
WO2014186073A1 (en) Method of improving print performance in flexographic printing plates
WO2003073165A3 (en) Self-aligned pattern formation using dual wavelengths
JPH10293395A5 (https=)
TW362237B (en) Method for fabricating phase shift mask by controlling an exposure dose
WO2015112478A1 (en) Photosensitive resin composition
JPH06503187A (ja) 写真石版法によってパターンを形成した感光性塗料
US20070148602A1 (en) Method for Manufacturing Semiconductor Device
JPH02262319A (ja) パターン形成方法
JP2001201844A5 (https=)
KR100770274B1 (ko) 레지스트의 패턴형성방법
JP2676833B2 (ja) フォトレジストパターンの形成方法
JP3627137B2 (ja) パターン形成方法
JPH02183255A (ja) パターン形成方法
JP2015019089A (ja) インプリント・リソグラフィおよび直接描画技術を用いるデバイス製造方法