JP2005513777A5 - - Google Patents

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Publication number
JP2005513777A5
JP2005513777A5 JP2003553609A JP2003553609A JP2005513777A5 JP 2005513777 A5 JP2005513777 A5 JP 2005513777A5 JP 2003553609 A JP2003553609 A JP 2003553609A JP 2003553609 A JP2003553609 A JP 2003553609A JP 2005513777 A5 JP2005513777 A5 JP 2005513777A5
Authority
JP
Japan
Prior art keywords
dielectric layer
layer
dielectric
manufacturing
sol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003553609A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005513777A (ja
Filing date
Publication date
Priority claimed from DE10162443A external-priority patent/DE10162443A1/de
Application filed filed Critical
Publication of JP2005513777A publication Critical patent/JP2005513777A/ja
Publication of JP2005513777A5 publication Critical patent/JP2005513777A5/ja
Pending legal-status Critical Current

Links

JP2003553609A 2001-12-19 2002-12-06 多官能性カルボシランを用いる誘電性層の製造方法 Pending JP2005513777A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10162443A DE10162443A1 (de) 2001-12-19 2001-12-19 Verfahren zur Herstellung von dielektrischen Schichten unter Verwendung multifunktioneller Carbosilane
PCT/EP2002/013834 WO2003052809A1 (de) 2001-12-19 2002-12-06 Verfahren zur herstellung von dielektrischen schichten unter verwendung multifunktioneller carbosilane

Publications (2)

Publication Number Publication Date
JP2005513777A JP2005513777A (ja) 2005-05-12
JP2005513777A5 true JP2005513777A5 (enExample) 2006-01-05

Family

ID=7709842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003553609A Pending JP2005513777A (ja) 2001-12-19 2002-12-06 多官能性カルボシランを用いる誘電性層の製造方法

Country Status (9)

Country Link
US (1) US7090896B2 (enExample)
EP (1) EP1468446A1 (enExample)
JP (1) JP2005513777A (enExample)
KR (1) KR20040068274A (enExample)
CN (1) CN100336183C (enExample)
AU (1) AU2002366351A1 (enExample)
DE (1) DE10162443A1 (enExample)
TW (1) TWI265964B (enExample)
WO (1) WO2003052809A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040038048A1 (en) 2000-02-02 2004-02-26 Lg Chemical Ltd. Semiconductor interlayer dielectric material and a semiconductor device using the same
DE102004027857A1 (de) * 2004-06-08 2006-01-05 Siemens Ag Verfahren zum Herstellen eines keramischen Werkstoffs, keramischer Werkstoff und Keramikkörper mit dem keramischen Werkstoff
US7575979B2 (en) * 2004-06-22 2009-08-18 Hewlett-Packard Development Company, L.P. Method to form a film
US7892648B2 (en) * 2005-01-21 2011-02-22 International Business Machines Corporation SiCOH dielectric material with improved toughness and improved Si-C bonding
JP5324734B2 (ja) * 2005-01-21 2013-10-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 誘電体材料とその製造方法
JP4935111B2 (ja) 2006-02-22 2012-05-23 富士通株式会社 絶縁膜形成用組成物、半導体装置用絶縁膜、その製造方法および半導体装置
US20080012074A1 (en) * 2006-07-14 2008-01-17 Air Products And Chemicals, Inc. Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors
US20110076416A1 (en) * 2008-05-26 2011-03-31 Basf Se Method of making porous materials and porous materials prepared thereof
US10361137B2 (en) 2017-07-31 2019-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
DE102018102454A1 (de) * 2017-07-31 2019-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Verfahren

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677410A (en) * 1995-05-16 1997-10-14 Bayer Ag Carbosilane-dendrimers, carbosilane-hybrid materials, methods for manufacturing them and a method for manufacturing coatings from the carbosilane-dendrimers
JPH09143420A (ja) * 1995-09-21 1997-06-03 Asahi Glass Co Ltd 低誘電率樹脂組成物
DE19603241C1 (de) * 1996-01-30 1997-07-10 Bayer Ag Multifunktionelle, cyclische Organosiloxane, Verfahren zu deren Herstellung und deren Verwendung
US6005131A (en) 1996-01-30 1999-12-21 Bayer Aktiengesellschaft Multi-functional, cyclic organosiloxanes, process for the production thereof and use thereof
US6043330A (en) 1997-04-21 2000-03-28 Alliedsignal Inc. Synthesis of siloxane resins
US6143855A (en) 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
EP0981780A1 (de) 1997-05-23 2000-03-01 Agfa-Gevaert AG Beschichtete partikel
US6042994A (en) 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
US6068884A (en) 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
US6054206A (en) 1998-06-22 2000-04-25 Novellus Systems, Inc. Chemical vapor deposition of low density silicon dioxide films
US5906859A (en) 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
US6225238B1 (en) * 1999-06-07 2001-05-01 Allied Signal Inc Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
TWI291728B (en) * 2000-04-28 2007-12-21 Lg Chem Investment Ltd A process for preparing insulating material having low dielectric constant
US6514091B2 (en) * 2000-11-28 2003-02-04 Sumitomo Wiring Systems, Ltd. Electrical junction box for a vehicle
AU2003220039A1 (en) * 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
JP4139710B2 (ja) * 2003-03-10 2008-08-27 信越化学工業株式会社 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
KR100507967B1 (ko) * 2003-07-01 2005-08-10 삼성전자주식회사 실록산계 수지 및 이를 이용한 반도체 층간 절연막

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