JP2005513777A - 多官能性カルボシランを用いる誘電性層の製造方法 - Google Patents

多官能性カルボシランを用いる誘電性層の製造方法 Download PDF

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Publication number
JP2005513777A
JP2005513777A JP2003553609A JP2003553609A JP2005513777A JP 2005513777 A JP2005513777 A JP 2005513777A JP 2003553609 A JP2003553609 A JP 2003553609A JP 2003553609 A JP2003553609 A JP 2003553609A JP 2005513777 A JP2005513777 A JP 2005513777A
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JP
Japan
Prior art keywords
dielectric layer
producing
aryl
alkyl
layer according
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003553609A
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English (en)
Japanese (ja)
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JP2005513777A5 (https=
Inventor
キルヒマイヤー シュテファン
ガイザー デトレフ
クラウス ハラルト
メルカー ウド
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Bayer AG
Original Assignee
Bayer AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer AG filed Critical Bayer AG
Publication of JP2005513777A publication Critical patent/JP2005513777A/ja
Publication of JP2005513777A5 publication Critical patent/JP2005513777A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
  • Laminated Bodies (AREA)
  • Inorganic Insulating Materials (AREA)
JP2003553609A 2001-12-19 2002-12-06 多官能性カルボシランを用いる誘電性層の製造方法 Pending JP2005513777A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10162443A DE10162443A1 (de) 2001-12-19 2001-12-19 Verfahren zur Herstellung von dielektrischen Schichten unter Verwendung multifunktioneller Carbosilane
PCT/EP2002/013834 WO2003052809A1 (de) 2001-12-19 2002-12-06 Verfahren zur herstellung von dielektrischen schichten unter verwendung multifunktioneller carbosilane

Publications (2)

Publication Number Publication Date
JP2005513777A true JP2005513777A (ja) 2005-05-12
JP2005513777A5 JP2005513777A5 (https=) 2006-01-05

Family

ID=7709842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003553609A Pending JP2005513777A (ja) 2001-12-19 2002-12-06 多官能性カルボシランを用いる誘電性層の製造方法

Country Status (9)

Country Link
US (1) US7090896B2 (https=)
EP (1) EP1468446A1 (https=)
JP (1) JP2005513777A (https=)
KR (1) KR20040068274A (https=)
CN (1) CN100336183C (https=)
AU (1) AU2002366351A1 (https=)
DE (1) DE10162443A1 (https=)
TW (1) TWI265964B (https=)
WO (1) WO2003052809A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7470975B2 (en) 2006-02-22 2008-12-30 Fujitsu Limited Composition for forming insulation film, insulation film for semiconductor device, and fabrication method and semiconductor device thereof

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US20040038048A1 (en) * 2000-02-02 2004-02-26 Lg Chemical Ltd. Semiconductor interlayer dielectric material and a semiconductor device using the same
DE102004027857A1 (de) * 2004-06-08 2006-01-05 Siemens Ag Verfahren zum Herstellen eines keramischen Werkstoffs, keramischer Werkstoff und Keramikkörper mit dem keramischen Werkstoff
US7575979B2 (en) * 2004-06-22 2009-08-18 Hewlett-Packard Development Company, L.P. Method to form a film
US7892648B2 (en) * 2005-01-21 2011-02-22 International Business Machines Corporation SiCOH dielectric material with improved toughness and improved Si-C bonding
JP5324734B2 (ja) * 2005-01-21 2013-10-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 誘電体材料とその製造方法
US20080012074A1 (en) * 2006-07-14 2008-01-17 Air Products And Chemicals, Inc. Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors
KR20110021951A (ko) * 2008-05-26 2011-03-04 바스프 에스이 다공성 물질의 제조 방법 및 그 방법으로 제조된 다공성 물질
DE102018102454A1 (de) * 2017-07-31 2019-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Verfahren
US10361137B2 (en) * 2017-07-31 2019-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US5677410A (en) * 1995-05-16 1997-10-14 Bayer Ag Carbosilane-dendrimers, carbosilane-hybrid materials, methods for manufacturing them and a method for manufacturing coatings from the carbosilane-dendrimers
JPH09143420A (ja) * 1995-09-21 1997-06-03 Asahi Glass Co Ltd 低誘電率樹脂組成物
DE19603241C1 (de) * 1996-01-30 1997-07-10 Bayer Ag Multifunktionelle, cyclische Organosiloxane, Verfahren zu deren Herstellung und deren Verwendung
US6005131A (en) * 1996-01-30 1999-12-21 Bayer Aktiengesellschaft Multi-functional, cyclic organosiloxanes, process for the production thereof and use thereof
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6043330A (en) * 1997-04-21 2000-03-28 Alliedsignal Inc. Synthesis of siloxane resins
ATE226226T1 (de) * 1997-05-23 2002-11-15 Bayer Ag Organosilan-oligomere
US6042994A (en) * 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
US6068884A (en) * 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
US6054206A (en) * 1998-06-22 2000-04-25 Novellus Systems, Inc. Chemical vapor deposition of low density silicon dioxide films
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
US6225238B1 (en) * 1999-06-07 2001-05-01 Allied Signal Inc Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
EP1150346B1 (en) * 2000-04-28 2011-12-28 LG Chem Investment, Ltd A process for preparing insulating material having low dielectric constant
US6514091B2 (en) * 2000-11-28 2003-02-04 Sumitomo Wiring Systems, Ltd. Electrical junction box for a vehicle
US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
JP4139710B2 (ja) * 2003-03-10 2008-08-27 信越化学工業株式会社 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
KR100507967B1 (ko) * 2003-07-01 2005-08-10 삼성전자주식회사 실록산계 수지 및 이를 이용한 반도체 층간 절연막

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7470975B2 (en) 2006-02-22 2008-12-30 Fujitsu Limited Composition for forming insulation film, insulation film for semiconductor device, and fabrication method and semiconductor device thereof

Also Published As

Publication number Publication date
EP1468446A1 (de) 2004-10-20
US20030181537A1 (en) 2003-09-25
HK1076918A1 (zh) 2006-01-27
TW200305618A (en) 2003-11-01
CN100336183C (zh) 2007-09-05
AU2002366351A1 (en) 2003-06-30
US7090896B2 (en) 2006-08-15
KR20040068274A (ko) 2004-07-30
DE10162443A1 (de) 2003-07-03
WO2003052809A1 (de) 2003-06-26
CN1605118A (zh) 2005-04-06
TWI265964B (en) 2006-11-11

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