JP2005513737A - 電子およびオプトエレクトロニクス・デバイス用の電極構造 - Google Patents
電子およびオプトエレクトロニクス・デバイス用の電極構造 Download PDFInfo
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- JP2005513737A JP2005513737A JP2003555862A JP2003555862A JP2005513737A JP 2005513737 A JP2005513737 A JP 2005513737A JP 2003555862 A JP2003555862 A JP 2003555862A JP 2003555862 A JP2003555862 A JP 2003555862A JP 2005513737 A JP2005513737 A JP 2005513737A
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- 125000005259 triarylamine group Chemical group 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- Physics & Mathematics (AREA)
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- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】該デバイスは、導電層(204)を実質的に有する第1の電極と、この導電層上に形成された非金属層(206)と、この非金属層上に形成されたフルオロカーボン層(208)と、このフルオロカーボン層上に形成された構造(210)とを含む。この電極はさらに導電層と非金属層の間にバッファ層(205)を含む。
Description
−プラズマ化学的気相堆積法(PECVD)を含む化学的気相堆積法(CVD)
−スパッタ付着(堆積)または(例えば酸素環境中での)反応性スパッタ付着
−熱蒸着
−電子ビーム蒸着
−酸素プラズマ(プラズマ支援酸化)
−酸化環境での熱アニール
−UVオゾン処理
−湿式化学酸化
−電気化学酸化
ITO:インジウム−スズ−酸化物
NPB:4,4’−ビス−[N−(1−ナフチル)−N−フェニルアミノ]−ビ−フェニル(4,4'-bis[N-(1-naphthyl)-N-phenylamino]-bi-phenyl)(正孔輸送層)
Alq:トリス(8−キノリノラト−N1,08)−アルミニウム(tris(8-quinolinolato-N1,08)-aluminium)(電子輸送層。ここでは発光層と電子輸送層とが結合した層として機能する)。
MgAg:体積比10:1のマグネシウム銀
1a)ガラス(基板)上にTiを蒸着。
1b)Ti/ガラス上にAlを蒸着。
1c)ITOを付着(堆積)。任意選択でPtまたはTiのバッファ層をAlとITOの間に形成することもできる。
2)この構造をプラズマ・エッチング/堆積装置に挿入。
a)クリーニングおよび酸化(ITO用も)のために酸素プラズマ処理、
b)13.6MHzプラズマ中でのCHF3ガスのプラズマ重合によって厚さ3nmのフルオロカーボン・ポリマーを付着。
3)OLE材料付着チャンバへ移送。
a)フルオロカーボン・ポリマー層上に厚さ50〜60nmのNPB正孔輸送層を従来の熱蒸着(thermal vapor deposition)によって付着させ、
b)NPB層上に厚さ65nmのAlq電子輸送/発光層を従来の熱蒸着によって付着させ、
c)その上に10〜20nmのCa層を付着させ、
d)Ca層上に厚さ20nmのMgAg層を、2つの源(MgおよびAg)からの同時蒸着によって付着させた。
Claims (12)
- 導電層(204、304)を実質的に有する第1の電極と、
前記導電層(204、304)上に形成された非金属層(206、306)と、
前記非金属層(206、306)上に形成されたフルオロカーボン層(208、308)と、
前記フルオロカーボン層(208、308)上に形成された構造(210、310)と、
前記構造(210、310)上に形成された第2の電極(220、311、330)と
を備えた電子デバイス。 - 前記導電層(204)と前記非金属層(206)の間にバッファ層(205)をさらに備えた、請求項1に記載のデバイス。
- 前記非金属層(206、306)が酸化物を含む、請求項1または2に記載のデバイス。
- 前記酸化物が、以下の族のうちの1つから選択された材料に基づく、請求項3に記載のデバイス:3d遷移金属族、IIIA族、IVA族、希土類金属族、またはこれらの組合せ。
- 前記非金属層(206、306)の前記酸化物が、前記導電層(204、304)によって形成される可能性のある酸化物とは異なる、請求項3に記載のデバイス。
- 前記非金属層(206、306)の厚さが、単分子層から20nmまでの範囲にある、請求項1ないし5のいずれかに記載のデバイス。
- 前記導電層(204、304)が光反射材料を含む、請求項1ないし6のいずれかに記載のデバイス。
- 前記導電層(204、304)が鏡のような表面を形成する、請求項1ないし7のいずれかに記載のデバイス。
- 前記導電層(204、304)がアルミニウム(Al)を含む、請求項1ないし8のいずれかに記載のデバイス。
- 前記導電層(204)または前記構造(210)と接触した基板(202)をさらに含む、請求項1ないし9のいずれかに記載のデバイス。
- エレクトロルミネセンス・デバイス(OLED)、トランジスタまたはセンサの一部である、請求項1ないし10のいずれかに記載のデバイス。
- 請求項1ないし11のいずれかに記載の電子デバイスを形成する方法であって、
第1の電極の働きをする導電層(204、304)を準備するステップと、
前記導電層(204、304)上に非金属層(206)を形成するステップと、
前記非金属層(206、306)上にフルオロカーボン層(208、308)を付着させるステップと、
前記フルオロカーボン層(208、308)上に複数の層を、構造(210、310)として形成するステップと、
前記構造(210、310)上に第2の電極(220、311、330)を形成するステップと
を含む方法。
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EP01811260 | 2001-12-21 | ||
PCT/IB2002/004975 WO2003055275A1 (en) | 2001-12-21 | 2002-11-26 | Electrode structure for electronic and opto-electronic devices |
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US (1) | US6995391B2 (ja) |
EP (1) | EP1457093A1 (ja) |
JP (1) | JP3943548B2 (ja) |
KR (1) | KR100781620B1 (ja) |
CN (1) | CN100531500C (ja) |
AU (1) | AU2002347506A1 (ja) |
CA (1) | CA2470206C (ja) |
WO (1) | WO2003055275A1 (ja) |
Cited By (3)
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JP2005267926A (ja) * | 2004-03-17 | 2005-09-29 | Japan Science & Technology Agency | 両面発光有機elパネル |
JP2006303463A (ja) * | 2005-03-25 | 2006-11-02 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2011181508A (ja) * | 2005-03-25 | 2011-09-15 | Semiconductor Energy Lab Co Ltd | 発光装置 |
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JP3706605B2 (ja) * | 2002-09-27 | 2005-10-12 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
TW200515836A (en) * | 2003-10-22 | 2005-05-01 | Hannstar Display Corp | Organic electroluminescent element |
KR100611157B1 (ko) * | 2003-11-29 | 2006-08-09 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그의 제조방법 |
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JP4677314B2 (ja) * | 2005-09-20 | 2011-04-27 | 富士フイルム株式会社 | センサーおよび有機光電変換素子の駆動方法 |
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KR101156428B1 (ko) * | 2009-06-01 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 |
US20110008525A1 (en) * | 2009-07-10 | 2011-01-13 | General Electric Company | Condensation and curing of materials within a coating system |
KR20110039810A (ko) * | 2009-10-12 | 2011-04-20 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 |
WO2012001727A1 (ja) * | 2010-06-28 | 2012-01-05 | パナソニック株式会社 | 有機発光素子とその製造方法、有機表示パネル、有機表示装置 |
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US5556706A (en) * | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
US5663573A (en) * | 1995-03-17 | 1997-09-02 | The Ohio State University | Bipolar electroluminescent device |
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JP3488474B2 (ja) * | 1998-02-02 | 2004-01-19 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 有機発光ダイオード用のアノード改質 |
JP3776600B2 (ja) * | 1998-08-13 | 2006-05-17 | Tdk株式会社 | 有機el素子 |
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JP2005267926A (ja) * | 2004-03-17 | 2005-09-29 | Japan Science & Technology Agency | 両面発光有機elパネル |
JP2006303463A (ja) * | 2005-03-25 | 2006-11-02 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2011181508A (ja) * | 2005-03-25 | 2011-09-15 | Semiconductor Energy Lab Co Ltd | 発光装置 |
US8362688B2 (en) | 2005-03-25 | 2013-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9246056B2 (en) | 2005-03-25 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
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KR20040070166A (ko) | 2004-08-06 |
CN100531500C (zh) | 2009-08-19 |
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AU2002347506A1 (en) | 2003-07-09 |
CA2470206A1 (en) | 2003-07-03 |
CA2470206C (en) | 2010-03-30 |
US6995391B2 (en) | 2006-02-07 |
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