TWI295902B - Electrode structure for electronic and opto-electronic devices - Google Patents

Electrode structure for electronic and opto-electronic devices Download PDF

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TWI295902B
TWI295902B TW91120166A TW91120166A TWI295902B TW I295902 B TWI295902 B TW I295902B TW 91120166 A TW91120166 A TW 91120166A TW 91120166 A TW91120166 A TW 91120166A TW I295902 B TWI295902 B TW I295902B
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Taiwan
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layer
conductive layer
electrode
anode
fluorocarbon
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TW91120166A
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Chinese (zh)
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Riess Walter
Riel Heike
A Beierlein Tilman
Crone Brian
Ruhstaller Beat
F Alvarado Santos
Mueller Peter
Seidler Paul
W Germann Roland
Drechsler Ute
W Widmer Roland
F Karg Siegfried
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Ibm
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12959021295902

技術領域 曰本1::關於一種用於電子裝置之電極設計。更特別的 疋’》係關於-種用於電子與光電裝置 發明背景 / S與光電裝置’如有機發光二極體(0LED)為相關技 * α。那些QLED亦視為有機電致發光(EL)裝置,通常 包括夹〜於一電極之間之有機電致發光材料。通 機電致發光材料為一多層結構,包括一電子傳遞層、j 致發先層以及一電洞傳遞層。於應用-電流時,該材料輻 ^該有機材料之電子與電洞重組產生之光。然而,該有 機電致發光材料對雜質、氧以及濕度敏感。此外,在一些 ,子或是光電襄置中,該些電極影響該裝置之強度、射 :以及可Λ度。相關技藝已知之有機電致發光裝置(材料 '、結構)為’例如’美國專利案案號為第Μ%,·號、美 國^利案案號為第5,593,788號以及美國專利案案號為第 ,8,109號所揭示,該些揭示在此處以提及的方式併 文中。 曰,然夕層裝置架構現在已經詳細瞭解以及廣泛被使用, 是 D之剩餘效能限制為電極。電極材料之主要優值 為電極費米能量相對於相關分子能量位準之位置。在某些 ^ 亦值知期待電極輔助光抽取。電極亦必須相對於 籍t洚機材料為非化學活性以提供該電致發光裝置之長期 穩疋度。 ^木中σ午多注意力在陰極,大部分因為良好之電子注 -8 ϋ適用中國國家標^^^¥— X 297公愛) 嫩。166號專利申請案 中文說明書替換頁(93年3月)Technical Field 曰本1: About an electrode design for an electronic device. More particularly, 疋' is related to the use of electronic and optoelectronic devices. Background / S and optoelectronic devices such as organic light-emitting diodes (0LED) are related to *α. Those QLEDs are also considered to be organic electroluminescent (EL) devices, typically comprising an organic electroluminescent material sandwiched between electrodes. The electroluminescent material is a multilayer structure comprising an electron transport layer, a precursor layer, and a hole transport layer. When applied - current, the material radiates light from the recombination of electrons and holes in the organic material. However, the electroluminescent material is sensitive to impurities, oxygen and humidity. In addition, in some, sub-photovoltaic devices, the electrodes affect the strength, radiation, and flexibility of the device. Organic electroluminescent devices (materials, structures) known in the art are described, for example, in U.S. Patent No. Μ%, No., U.S. Patent No. 5,593,788, and U.S. Patent No. As disclosed in 8,8, the disclosures are hereby incorporated by reference. The structure of the device is now well understood and widely used, and the residual performance of D is limited to the electrode. The primary figure of merit for the electrode material is the position of the electrode Fermi energy relative to the associated molecular energy level. In some ^, it is also known that the electrode assisted light extraction is expected. The electrode must also be non-chemically active relative to the material of the device to provide long-term stability of the electroluminescent device. ^Wood in the σ mid-day attention to the cathode, mostly because of the good electronic note -8 ϋ apply to the Chinese national standard ^ ^ ^ ¥ - X 297 public love) tender. Patent Application No. 166 Chinese Manual Replacement Page (March 1993)

發明説明( 煩 請 委 員 明 本 案 修 SL· 後 是 否 變 更 原 實 質 内 卜為低工作函數金屬’其在大氣壓中亦為快速化學反應 虱化,限制該0LED可靠度與壽命。不多注意力集中於 &極觸點之最佳化,因為傳統ΙΤΌ陽極性能通常較陰極觸 省:導致過里之電洞。由於此過*,以及氧化銦錫(ΙΤ0) V兒度之相關方便性與透明度,?文良之陽極已經不像改良 之陰極那麼被積極尋找。 义關於足夠電洞注入以及操作穩定度之問題隨著有機電致 光裝置之使用而產生。一些問題已經由該裝置之陽極氟 反處理加以解除。美國專利案案號為第^ 27,刪號之專利 ,係關於形成一電致發光裝置之一方法,包括下列步驟: 提供具有以包含具有氧化銦錫(IT〇)之一陽極之材料塗佈 2一上表面之一基板;以及藉由提供該氟碳氣體於基本源 月二中而形成一非結晶導電層於該陽極之上以及使此氟碳氣 體文到0.1至20 m 丁範圍内之減低壓力。此外,一 RF場應用 至正個基本源腔之氟碳氣體以形成具有CFx基之電漿以及 孩些CFx基沈積於該陽極上形成該陽極上之非結晶導 電4 σ物層。之.後該非結晶CFx導電聚合物層之上之複數 層與包含至少一有機電致發光層之這些層以及該電致發光 層之上之一陰極被形成。 美國專利案案號為第6,208,075號之專利案亦關於一有機 電致發光裝置,其具有一導電氟碳聚合物層沈積於一陽極 之上以及美國專利案案號為第ό,208,077號之專利案顯示一 薄非導電氟碳聚合物層沈積於該陽極之上。所提到之該些 氟石反聚合物層被應用是因為其傳遞特性,所以作用為電洞 -9 -Description of the invention (Is it necessary for the committee member to change the original substance to be a low work function metal after the revision of the case.) It is also a rapid chemical reaction at atmospheric pressure, limiting the reliability and life of the 0LED. Less attention is focused on & The optimization of the pole contacts is because the performance of the conventional tantalum anode is usually more inferior to that of the cathode: the hole that leads to the over-the-counter. Because of this, and the convenience and transparency of the indium tin oxide (ΙΤ0) V? Wenliang's anode has not been actively sought after as a modified cathode. The problem of sufficient hole injection and operational stability arises with the use of organic electro-optic devices. Some problems have been solved by the anode anti-treatment of the device. U.S. Patent No. 27, the number of which is incorporated herein by reference, discloses a method for forming an electroluminescent device comprising the steps of: providing a material having an anode comprising one of indium tin oxide (IT〇) Coating a substrate of one of the upper surfaces; and forming a non-crystalline conductive layer on the anode by providing the fluorocarbon gas in the base source The fluorocarbon gas is reduced to a pressure in the range of 0.1 to 20 m. In addition, an RF field is applied to the fluorocarbon gas of the basic source cavity to form a plasma having a CFx group and a CFx group is deposited on the anode. Forming an amorphous conductive 4 σ layer on the anode, and then forming a plurality of layers on the amorphous CFx conductive polymer layer and the layers including the at least one organic electroluminescent layer and the electroluminescent layer A cathode is formed. U.S. Patent No. 6,208,075 also relates to an organic electroluminescent device having a layer of a conductive fluorocarbon polymer deposited on an anode and the U.S. Patent No. Patent No. 208,077 shows the deposition of a thin layer of non-conductive fluorocarbon polymer on the anode. The fluorocarbon anti-polymer layer mentioned is used because of its transfer characteristics, so that it acts as a hole -9. -

本紙張尺度適用巾國國冢標準(CNS) A4規格(2lJ^ST L)正替換買 {紛3。166號專利中請案 中文說明書替換頁(93年3月) 五、發明説明(3 :-。孩些鼠碳聚合物層較佳地附著於包含氧之陽極上 歹i如ΙΊΌ ’㈣使料他材料導致不穩定之裝置效能。 具有國際公開發行刊物號碼w〇 99/39393之國際申請 呈:前歸屬於申請案之受讓人,係、關於-有機發光裝Γ: ;;依序為一陽極、一障蔽層、-陽極修正層、一有機區 =艾極修正層直接與該有機區域接觸。該 ==配置為分離該陽極修正層與該陽極1而此層因為 “不障蔽特性所以妨礙注入。 :光電裝置可以作用為一上部發射裝置或是一底部發射 =置(亦視為背部發射裝置)。對底部發射裝置而言,該陽 和必須幾乎透明’以致於該發射之光可以通過該陽極。氧 ^扣錫(ITO)已被廣泛應用為陽極,因為其幾乎形成透明 :iIT0具有缺點為其部分可以與上部之層,例如該電洞 專遞有機材料反應。此情形可以導致該裝置壽命縮短。為 :止該裝置壽命縮短之情形發生’-緩衝層,例如Cupc經 :被使用於該陽極與該有機材料之間,但另一方面該緩衝 層具有一高電阻以及妨礙注入1氟碳聚合物層之使用, 如上述,允許捨棄該緩衝層。 S對上部發射裝置而言’翻或鉬已經被應用。這些材料不 疋透月的以及具有一強烈光吸收特性。鉑之反射指數不是 最佳。銀(Ag)以及銘⑷)具有一高反射率但是一較低工作 函數’所以不適合作為陽極材料。_般而言,具有一高工 作函數之材料將被執行為最佳之合適陽極材料。低工作函 數之材料’例如A卜通常為高化學活性,即使以一緩衝層 -10-本紙張尺度適用巾a ®家鮮(CNS) A4祕(21GX 297公奸 號專利申請案 中文說明書替換頁(93年3月) 五、發明説明(4 ’例如㈣覆蓋,因此那些材料不適… :此:材料以及該氟礙聚合物層之组:導 所以導致無用之裝置。 罪之效月b 因而由上述說明可知仍鈇 良結構之相關技藝之需要:、、; :子與光電裝置之電極改 度以及高效率。4 ^極改良結構顯示長期穩定 所以本發明之一目的為接 之顯干/、匕括一有機材料以及基於此 頌不裔之電子裝置之改良電極結構。 發明總結 如本發明’提供一電子裝置’包括-第-電極,實質上 具有一導電層、形成於該導電層上之_非 該非金屬層上之氣碳層、形成於該氣碳層上之一結構:及 形成於該結構上一第二電極。 該電子裝置尚可以包括介於該導電層與該非金屬層之間 之一緩衝層。此一緩衝層有利地減少介於該第一電極血該 些其他層之間之反應。特別是氧化程序可以被避免。 在一較佳具體實施例中,該導電層包括鋁(A1)。鋁通常 為鬲度反射性但是亦為易反應性。然而,具有非金屬層或 是提到之緩衝層與該導電層上之該非金屬層組合,結果變 成具有優越特性及特徵之該些電致發光裝置可以被設計。 該非金屬層可以包括一氧化物。氧化物可充分使用或是 可以由許多材料或是化合物形成。該氧化物可以基於選自 下列群組之一群組:3d過渡金屬群組、ΠΙΑ群組、IVa群 組、稀土元素金屬群組或是其中之一組合。 11 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1295902This paper scale is applicable to the National Standard for Towels (CNS) A4 specification (2lJ^ST L) is being replaced by the purchase of the Chinese version of the application in the patent No. 3.166. (In March, 1993) V. Invention description (3: - The mouse carbon polymer layer is preferably attached to an oxygen-containing anode, such as ΙΊΌ' (4), which causes the material to cause instability. The international application has the international publication number w〇99/39393. Presented: the assignee formerly assigned to the application, Department, about - organic light-emitting device: ;; sequentially an anode, a barrier layer, - anode correction layer, an organic region = Aiji correction layer directly with the organic Area contact. The == is configured to separate the anode correction layer from the anode 1 and this layer interferes with the injection because of the "non-blocking property.: The photovoltaic device can function as an upper emitter or a bottom emitter = (also considered Back emitting device. For the bottom emitting device, the positive sum must be almost transparent 'so that the emitted light can pass through the anode. Oxygen tin (ITO) has been widely used as an anode because it is almost transparent: iIT0 has its drawbacks as part of it It can react with the upper layer, for example, the hole-transporting organic material. This situation can lead to a shortened life of the device. For the case where the life of the device is shortened, a buffer layer, such as Cupc, is used for the anode and Between the organic materials, but on the other hand the buffer layer has a high electrical resistance and hinders the use of the injected 1 fluorocarbon polymer layer, as described above, allowing the buffer layer to be discarded. S For the upper emitter, the flip or molybdenum has been Application. These materials are not permeable to the moon and have a strong light absorption property. The platinum reflection index is not optimal. Silver (Ag) and Ming (4) have a high reflectivity but a lower work function' so it is not suitable as an anode material. In general, a material with a high work function will be implemented as the best suitable anode material. A material with a low work function, such as A, is usually highly chemically active, even with a buffer layer of -10- paper scale. Applicable towel a ® home fresh (CNS) A4 secret (21GX 297 public patent application Chinese manual replacement page (March 1993) V. Invention description (4 'for example (four) coverage, therefore those Unsuitable material: : This: the material and the group of the fluorine-blocking polymer layer: lead to the useless device. The effect of the crime b. Therefore, from the above description, the need for the related art of the good structure is::,; The electrode modification and high efficiency of the photovoltaic device. The improved structure of the electrode shows long-term stability. Therefore, one of the objects of the present invention is to improve the electrode structure of the organic device and the electronic device based on the electronic device. SUMMARY OF THE INVENTION The present invention provides an electronic device comprising a first electrode having substantially a conductive layer, a carbonaceous layer formed on the conductive layer other than the non-metal layer, and formed on the carbonaceous layer. a structure: and a second electrode formed on the structure. The electronic device may further include a buffer layer between the conductive layer and the non-metal layer. This buffer layer advantageously reduces the reaction between the other layers of the first electrode blood. In particular, oxidation procedures can be avoided. In a preferred embodiment, the conductive layer comprises aluminum (A1). Aluminum is usually highly reflective but also reactive. However, the electroluminescent device having a non-metallic layer or a buffer layer as described in combination with the non-metal layer on the conductive layer can be designed to have superior characteristics and characteristics. The non-metallic layer can include an oxide. The oxide may be used adequately or may be formed from a number of materials or compounds. The oxide may be based on a group selected from the group consisting of a 3d transition metal group, a ruthenium group, an IVa group, a rare earth metal group, or a combination thereof. 11 The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1295902

二該=屬層為與可以由該導電層形成之_潛在氧化物 = '匕物日丁亦視為異質氧化物,則發生該電極之 孔/、光:4寸性,例如注入與透明度可以被修改之優點。 1如、田f導電層由A1形成時則由該導電層形成或是建立 /曰在氧化物為氧化鋁。事實為該氧化鋁具有較例如氧 :鎳(Ni〇x)電阻高之_電阻。因此使用Νί〇χ為該異質氧化 、幵v j該非金屬層顯示較氧化鋁為佳之電洞注入特性。 八有间反射率之該導電層與支援電洞注入之該非金屬層 組合額外導致具有改良之光輪出之可靠以及顯著改良之; 致發光裝置。 依據省V電層之特性,假使該非金屬層具有一單層為 2〇 nm犯圍之厚度為有利的,因為之後該電子裝置顯示優 越之長期穩定度以及高效率。在電致發光裝置(〇led), 例如主動驅動裝置中,車交高之厚度值經常與較高驅 結合。 龙 該導電層可以包括-金屬、_半導體或是—有機導體。 此外,該導電層可以包括_„反射材料。該導電層之較 佳材料,亦即電極之材料,為鋁(A1)或是銀(Ag)。當一氧 化物或是異質氧化物使用為該導電層上之非金屬層時,那 些材料將成為焦點。 該導電層可以形成一鏡子似表面。意義為陽極工作為一 鏡子以及反射該發射光以強化光輸出。此觀念對上部發射 裝置以及底部發射裝置起作用。 將視作用為一電氣-至-光學或是光學-至-電氣變換器之 -12-2, the genus layer is and can be formed by the conductive layer _ potential oxide = ' 匕 日 丁 亦 is also considered as a heterogeneous oxide, then the hole of the electrode / light: 4 inch, such as injection and transparency can be The advantages of being modified. 1 If the conductive layer of the field f is formed of A1, it is formed by the conductive layer or the oxide is alumina. The fact is that the alumina has a higher resistance than, for example, oxygen: nickel (Ni〇x) resistance. Therefore, the use of Νί〇χ for the heterogeneous oxidation, 幵v j of the non-metallic layer shows better hole injection characteristics than alumina. The combination of the electrically conductive layer having an inter-reflectivity and the non-metallic layer supporting the hole injection additionally results in a reliable and significantly improved optical rounding improvement; a luminescent device. Depending on the characteristics of the provincial V-electrode layer, it is advantageous if the non-metallic layer has a thickness of 2 〇 nm for a single layer, since the electronic device then exhibits superior long-term stability and high efficiency. In electroluminescent devices, such as active drives, the thickness of the vehicle is often combined with higher drive values. The conductive layer may comprise a metal, a semiconductor or an organic conductor. In addition, the conductive layer may include a reflective material. The preferred material of the conductive layer, that is, the material of the electrode, is aluminum (A1) or silver (Ag). When an oxide or a heterogeneous oxide is used as the When the non-metallic layer on the conductive layer, those materials will become the focus. The conductive layer can form a mirror-like surface. The meaning is that the anode works as a mirror and reflects the emitted light to enhance the light output. This concept is for the upper emitter and the bottom. The transmitting device functions. The viewing function is an electrical-to-optical or optical-to-electrical converter -12-

鮮利申請案 中文說明書替換頁(93年3月) --—-- 發明説明Fresh Profit Application Chinese Manual Replacement Page (March 1993) ----- Invention Description

:)正替換頁 任何裝置或是在其操作中使用此一裝置之 光電裝置術語之下。 器械為屬於該:) Positive replacement page Any device or optoelectronic device terminology that uses this device in its operation. Instrument belongs to

二电子裝置可以包括與該導電層或該結構接觸之一 〜基板可以為包含玻璃之任何材料(亦即上部發射^ ι 之一透明材料),矽(Si)或是塑膠(亦即底部發射裝^ 一 不透明材料)。該基板可以使用為用於形成一電^裝^ 一基準。 、i Z Λ電子裝置可以為電致發光裝置、一電晶體咬一 之部分。此顯示該電極設計可以被廣泛使用。然而 不限於提到之應用。亦不限於與有機結構之使用, 乂 〃下列結構結合使用:有機/無機、有機_無機混 無機。此外,該電極設計與該結構可應用於廣泛Ζ 光電應用變化中。 本發明亦關於用於一種形成該電子裝置之方法。 包括下列步驟:提供一導電層以作用為一第一電極 一非金屬層於該第一電極上;沈積一氟碳層於該非 上;形成複數層為該氟碳層上之結構以及形成一第 於該結構上。 該結 但是 合或 電子 該方 :形 金屬 二電The two electronic devices may include one of the contacts with the conductive layer or the structure. The substrate may be any material containing glass (ie, one of the upper emitting materials), bismuth (Si) or plastic (ie, bottom emitting device). ^ An opaque material). The substrate can be used to form an electrical reference. The i Z Λ electronic device may be part of an electroluminescent device and a transistor bite. This shows that the electrode design can be widely used. However, it is not limited to the applications mentioned. It is not limited to the use of organic structures, 乂 〃 combined with the following structures: organic / inorganic, organic - inorganic mixed inorganic. In addition, the electrode design and the structure can be applied to a wide range of variations in optoelectronic applications. The invention is also directed to a method of forming the electronic device. The method comprises the steps of: providing a conductive layer to act as a first electrode and a non-metal layer on the first electrode; depositing a fluorocarbon layer on the non-onset; forming a plurality of layers on the fluorocarbon layer and forming a first On the structure. The knot, but the combination or the electron, the party: the shape of the metal, the second

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圖式之簡單說明 本毛明之較佳具體實施例將在下文以舉例方式詳細說明 ’參考下列概要附圖。 圖1顯示先前技藝之一有機電致發光裝置之一圖式解釋; 圖2a顯示一有機電致發光裝置之第一具體實施例之一圖 式解釋; -13- 本紙張尺度適用巾s a家標準(CNS) A4規格(210 X 297公爱) 1295902 A7 __ __ B7 五、發明説明(7 ) 圖2b顯示一有機電致發光裝置之第二具體實施例之一圖 式解釋; 圖3 a顯示一有機電晶體之第三具體實施例之一圖式解釋; 圖3b顯示一有機電晶體之第四具體實施例之一圖式解釋; 圖4顯示一第一測試之有機電致發光裝置電流-電壓關係與 第二測試之有機電致發光裝置亮度-電壓關係之一圖式; 圖5顯示一第三測試之有機電致發光裝置電流-電壓與亮 度-電壓關係之一圖式; 圖6顯示一第二測試之有機電致發光裝置效率-電壓關係 之一圖式;以及 圖7顯示一第四測試之有機電致發光裝置壽命之標準化 圖式。 該些圖式僅提供於解釋性目的以及不需要按比例呈現本 發明實際例子。 圖式之詳細說明 雖然本發明可應用於廣泛的電子與光電應用變化中,但 將把焦點放在一有機電致發光裝置之應用中,亦即一有機 發光裝置(OLED)以及一有機電晶體。 在本發明之具體實施例說明之前,將提出先前技藝之電 致發光裝置建構。 圖1顯示一有機電致發光裝置1〇〇,具有一基板1〇2,在 基板上沈積一氧化銦錫(ITO)陽極1〇4。該基板1〇2以及該 ITO陽極104為透光。一聚合物層1〇8配置為與該IT〇陽極 104直接接觸。一有機發光結構η〇被形成於以該聚合物層 -14 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 祕號專利申請案 中文說明書替換頁(93年3月) A7 B7 ^ IIII 乃衫序㊈修成)正替換頁 五 發明説明(8 108塗佈之該ITO陽極1〇4與一陰極12〇之間。該有機發光結 構110包括,依順序為,一有機電洞傳遞層丨12、一有機發 光層114以及一有機電子傳遞層116。當一電位差加於該陽 極104與該陰極12〇之間,以致於該陽極ι〇4相對於該陰極 120為正電時,該陰極ι2〇將注入電子至該有機電子傳遞層 Π6内,以及該電子將橫越該電子傳遞層116以及該發光層 1 1 4。同時,電洞將由該陽極丨〇4注入至該電洞傳遞層1 1 2 内’以及該些電洞將遷移跨越該層112,而最終與接近介 於該電洞傳遞層112與該發光層丨14之間之介面重組。當由 傳導帶產生之電子與由價帶產生之電洞放射地重組時,光 子可以發射穿過該光-可穿透陽極1〇4以及基板1〇2 ,如箭 頭所示,以用於供觀察者觀看。 該聚合物層108可以由RF電漿之氟碳氣體之電漿聚合作 用準備。該氟碳聚合物為鐵氟龍似之聚合物以及實質上由 碳及氟形成。其亦可以包含氫及/或小量雜質,如氮、氧 等。該聚合物層之厚度被選擇以致使其將具有在下方之導 電層上完全之涵蓋,且使其低導電率對裝置效能不具有負 面衝擊。 、 圖2a顯示一有機電致發光裝置2⑽之第一具體實施例j 一圖式解釋。該有機電致發光裝置2〇〇,此處為一上部^ 、穿置八有基板202,在該基板上沈積一第一電極2〇 ,亦視為一陽極204。該陽極204包括一層導電及高度 ㈣料,以Μ標示,以提供一鏡子似表面。實質上包括一 氧化物之非金屬層2 0 6被形成於該陽極2 〇 4上。此外,1BRIEF DESCRIPTION OF THE DRAWINGS Preferred embodiments of the present invention will be described in detail below by way of example ' with reference to the following summary drawings. 1 shows a schematic explanation of one of the prior art organic electroluminescent devices; FIG. 2a shows a schematic explanation of a first embodiment of an organic electroluminescent device; -13- This paper scale applies to the standard of the towel sa (CNS) A4 specification (210 X 297 public) 1295902 A7 __ __ B7 V. Description of the invention (7) Figure 2b shows a schematic explanation of a second embodiment of an organic electroluminescent device; Figure 3a shows a A schematic diagram of a third embodiment of an organic transistor; FIG. 3b shows a schematic explanation of a fourth embodiment of an organic transistor; FIG. 4 shows a current-voltage of a first organic electroluminescent device. Figure 1 shows a graph of the relationship between the current-voltage and the brightness-voltage relationship of the organic electroluminescent device of the third test; FIG. A second graph of the efficiency-voltage relationship of the organic electroluminescent device of the second test; and FIG. 7 shows a normalized pattern of the lifetime of the organic electroluminescent device of a fourth test. The drawings are provided for illustrative purposes only and are not intended to be a DETAILED DESCRIPTION OF THE DRAWINGS While the present invention is applicable to a wide variety of electronic and optoelectronic application variations, it will focus on the application of an organic electroluminescent device, namely an organic light emitting device (OLED) and an organic transistor. . Prior to the description of specific embodiments of the present invention, prior art electroluminescent device construction will be presented. Fig. 1 shows an organic electroluminescent device 1A having a substrate 1〇2 on which an indium tin oxide (ITO) anode 1〇4 is deposited. The substrate 1〇2 and the ITO anode 104 are light transmissive. A polymer layer 1 8 is configured to be in direct contact with the IT crucible anode 104. An organic light-emitting structure η〇 is formed on the polymer layer-14 - the paper size applies to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm). The secret number patent application Chinese manual replacement page (March 1993) A7 B7 ^ IIII is a smear of the ninth aspect of the invention. The replacement of the fifth page of the invention (8 108 between the ITO anode 1 〇 4 and a cathode 12 涂布. The organic light-emitting structure 110 includes, in order, one has An electromechanical hole transfer layer 12, an organic light emitting layer 114, and an organic electron transport layer 116. When a potential difference is applied between the anode 104 and the cathode 12?, the anode 4 is positive with respect to the cathode 120. When electrically, the cathode ι2 〇 will inject electrons into the organic electron transport layer ,6, and the electrons will traverse the electron transport layer 116 and the luminescent layer 112. At the same time, the hole will be injected from the anode 丨〇4 The hole transport layer 1 1 2 'and the holes will migrate across the layer 112 and eventually recombine with the interface between the hole transfer layer 112 and the light-emitting layer 14 . The generated electrons and the holes generated by the valence band radiate In the group, photons can be emitted through the light-transmissive anode 1〇4 and the substrate 1〇2 as indicated by the arrows for viewing by an observer. The polymer layer 108 can be made of fluorocarbon of RF plasma. Preparation of a plasma polymerization of a gas. The fluorocarbon polymer is a polymer such as a Teflon and is substantially formed of carbon and fluorine. It may also contain hydrogen and/or a small amount of impurities such as nitrogen, oxygen, and the like. The thickness of the layer is chosen such that it will have full coverage on the underlying conductive layer, and its low conductivity does not have a negative impact on device performance. Figure 2a shows the first specificity of an organic electroluminescent device 2 (10) Embodiment j is a schematic explanation. The organic electroluminescent device 2 is an upper portion, and a substrate 202 is disposed on the substrate, and a first electrode 2 is deposited on the substrate, and is also regarded as an anode 204. The anode 204 includes a layer of conductive and height (four) material, indicated by Μ, to provide a mirror-like surface. A non-metallic layer 206 comprising substantially an oxide is formed on the anode 2 〇 4. Further, 1

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12¾辦2〇 166號專利申請案 中文說明書替換頁(93年3月) A7 B7123⁄4办2〇 Patent Application No. 166 Chinese Manual Replacement Page (March 1993) A7 B7

五、發明説明(9 質上包括氟碳之一聚合物層20 8被形成於該非金屬層206上 。一有機發光結構210被形成於以該氟碳層208塗佈之該非 金屬層206與一陰極220之間。該有機發光結構2 10包括, 依順序為,一有機電洞傳遞層2 12、一有機發光層2 14以及 一有機電子傳遞層2 1 6。該說明之結構較圖1所示之先前技 藝之結構有特色。該非金屬層206配置於該陽極204與該聚 合物層208之間。 該聚合物層208由一 RF電漿之氟碳氣體之電漿聚合作用 備便。亦可能應用化學氣相沈積(CVD)。 該陽極204包括一層導電與高度反射性材料,較佳為A1 或是Ag ’以提供一鏡子似表面。該非金屬層2〇6包括一氧 化物,且假使該導電以及高度反射性材料與氧接觸或是在 如ITO、NiOx2周圍環境下其所形成之氧化物不同於此處 之该氧化物。該非金屬層206之一些沈積方法列表於下: -化學氣相沈積(CVD),包含電漿增強之化學氣相沈積 (PECVD); -濺鍍沈積或反射性(例如,在一氧環境)濺鍍沈積; -熱蒸鑛; -電子束蒸鑛; -氧電襞(電聚輔助之氧化); -氧化環境之退火; -UV-臭氧處理; -濕式化學氧化; -電化學氧化。 -16-V. Description of the Invention (9 A polymer layer 208 comprising a fluorocarbon is formed on the non-metal layer 206. An organic light-emitting structure 210 is formed on the non-metal layer 206 coated with the fluorocarbon layer 208 The organic light emitting structure 2 10 includes, in order, an organic hole transport layer 2 12, an organic light emitting layer 2 14 and an organic electron transport layer 2 16 . The structure of the description is compared with that of FIG. 1 . The prior art structure is characterized in that the non-metal layer 206 is disposed between the anode 204 and the polymer layer 208. The polymer layer 208 is prepared by plasma polymerization of a fluorine plasma of RF plasma. It is possible to apply chemical vapor deposition (CVD). The anode 204 comprises a layer of electrically conductive and highly reflective material, preferably A1 or Ag' to provide a mirror-like surface. The non-metallic layer 2〇6 comprises an oxide, and The conductive and highly reflective materials are in contact with oxygen or the oxides formed therein are different from the oxides herein, such as ITO, NiOx2. Some deposition methods of the non-metal layer 206 are listed below: - Chemical gas Phase deposition (CVD) Contains plasma enhanced chemical vapor deposition (PECVD); - Sputter deposition or reflective (eg, in an oxygen environment) sputter deposition; - Hot steaming; - Electron beam evaporation; - Oxygen electricity (electropolymerization) Auxiliary oxidation); - Annealing of oxidizing environment; -UV-ozone treatment; - Wet chemical oxidation; - Electrochemical oxidation. -16-

1295902 A71295902 A7

舌亥基板2 0 2使用炎 _ 現之F 為—基準以及必須為電絕緣。因為該呈 巩l表置為一上部菸 .^ ^ %射裝置,亦即產生之光在該陽極2〇4 之鏡子似表面反射 其柘 及穿透忒陰極220,如箭頭所示,該 暴板可U為不读日日 , 透性。 。在該案例中,該陰極220必須為光穿 本發明不限於上 被應用於底部發射 徵。 4务射裝置’所以其所有優點當然可以 裝置。則該陽極204必須具有穿透性特 >田一底部發射裝置或是結構為所需時則該陽極2〇4以及 4基板2G2必須為光穿透性。在該案例中,該陽極^⑽適當 也^括半透明材料或;^金屬㈣。這些可以包括—透明傳導 氧化物,如氧化銦錫、經摻雜之氧化錫或是摻雜鋁之氧化 鋅。這些材料必須合適地沈積於該透明基板2〇2上,如玻 璃石英或一聚合物基板,例如聚對苯二曱酸乙二酯或是聚 醋酸乙烯酯。 該有機發光結構2 1 0之各種不同合成物可以被利用。 電洞傳遞層以及電洞注入層:下列材料適合為電洞注 入層以及有機電洞傳遞層2 12。包含芳香胺基之材料,類 似四本基二胺基二聯苯(TPD -1,TPD-2或是TAD)以及NPB (參見C· Tang,西元1996年芝加哥舉行之SID會議以及西 元 1995 年 Applied Physics Letters 第 66冊第 2679 頁 C. Adachi 等人之文章)、TPA、NIPC、TPM、DEH (縮寫請參見例如 :西元 1993年]\^1^1〇61^1^1*之?.:6〇1^1^〇1^61:以及〇.8The tongue substrate 2 0 2 uses inflammation _ now F is the reference and must be electrically insulated. Because the object is set as an upper smoke device, that is, the generated light reflects the surface of the anode 2〇4 and penetrates the cathode 220, as indicated by the arrow, the storm The board can be used for day and day. . In this case, the cathode 220 must be light transmissive. The invention is not limited to being applied to the bottom emission sign. 4 service device' so all its advantages can of course be installed. Then, the anode 204 must have a penetrating property and the structure of the substrate 2G2 must be light penetrating. In this case, the anode ^(10) also includes a translucent material or a metal (four). These may include - transparent conductive oxides such as indium tin oxide, doped tin oxide or aluminum doped zinc oxide. These materials must be suitably deposited on the transparent substrate 2, such as glass quartz or a polymer substrate such as polyethylene terephthalate or polyvinyl acetate. Various different compositions of the organic light-emitting structure 210 can be utilized. Hole transfer layer and hole injection layer: The following materials are suitable for the hole injection layer and the organic hole transfer layer 2 12 . A material containing an aromatic amine group, similar to tetra-based diaminodiphenyl (TPD-1, TPD-2 or TAD) and NPB (see C. Tang, SID Conference in Chicago in 1996 and Appliced in 1995) Physics Letters 66, page 2679 C. Adachi et al.), TPA, NIPC, TPM, DEH (for abbreviations, see for example: AD 1993)\^1^1〇61^1^1*?: 6〇1^1^〇1^61: and 〇.8

Weiss 之 Photoreceptors for Imaging Systems)。這些芳香胺 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1295902 A7 _ __B7 五、發明説明(n ) 基亦可以結合在聚合物、星爆形(例如:TCTA、m-MTDATA ’ 請參見西元 1994 年 Advanced Materials 第 6冊第 677頁Y· Kuwabara等人之文章、西元1994年Applied Physics Letters第65冊第807頁Y. Shirota等人之文章)以及 螺旋化合物中。 其他例子為:銅g太菁(CuPc)、(N,N,-二苯基-N,Nf-雙-(4-苯基苯基)-1,Γ-聯苯基_4,4f-二胺)、二苯乙烯基芳烯衍生 物(DSA)、莕、莕苯乙烯胺衍生物(例如NSD),喹吖啶酮 (QA)、聚(3-甲基噻吩)(P3MT)以及其衍生物、笸以及笸衍 生物、聚噻吩(PT)、3,4,9,10_笸四羧酸二酐(ptcda)、 PPV以及一些PPV衍生物,例如MEH-PPV、聚(9-乙烯基咔 唑)(PVK)、盤狀液晶材料(HPT)。 電子傳遞/發射材料為:Alq3、Gaq3、Inq3、Scq3、(q參 考8-羥基喹啉酸鹽或是其衍生物)以及其他8-羥基喹啉金屬 錯合物,例如 Znq2、Beq2、Mgq2、ZnMq2、BeMq2、BAlq 、以及AlPrqs。這些材料可以使用為該有機電子傳遞層 216或是有機發光層214。 ,其他類之電子傳遞材料為電子-不足含氮系統,例如氧 一嗤’類似PBD (以及許多衍生物)以及三唑,例如taz (1,2,4-三唑)。 這些功能群組亦可以結合在聚合物、星爆形以及螺旋化 合物中。其他類別為包含吡啶、嘧啶、吡畊以及1,2_二氮 三烯陸圜功能之材料。 最後,包含喹啉、喹吟啉、σ辛啉、呔畊以及喹唑啉功能 "18" 本紙張尺度適用中國國豕標準(CNS) Α4規格(21〇 X 297公爱) _ 1295902 A7 B7 五、發明説明(12 ) 之材料因為其電子傳遞能力而熟知。 其他材料為二癸基六嘍吩(DPS6T)、雙-三異丙基矽烷基 六魂吩(2D6T)、曱亞胺-鋅錯合物、吡畊(例如BNVP)、苯 乙烯基E衍生物(例如BSA-1、BSA-2)、非平面之二苯乙 烯基芳烯衍生物,例如DPVBi (參見C. Hosokawa及T. Kusumoto,西元1994年,Hamamatsu,42之國際無機及有 機電致發光專題論文發表會論文)、經氰基取代之聚合物 如氰基-PPV (PPV意義為聚(對-伸苯基伸乙烯))以及氰基-PPV衍生物。 下列材料特別適合為 發射層以及雜質:蒽、吡啶衍生物(例如ATP)、甲亞胺-鋅錯合物、咐畊(例如BNVP)、苯乙烯基蒽衍生物(例如 BSA-1、BSA-2)、蔻、香豆素、DCM化合物(DCM1、 DCM2)、二苯乙烯基芳烯衍生物(DSA)、經烷基取代之二 苯乙烯苯衍生物(DSB)、苯并咪唑衍生物(例如,NBI)、莕 并苯乙烯胺衍生物(例如NSD)、氧二唑衍生物(例如OXD、 OXD-1、OXD-7)、N,N,N、Nf-四(間-甲基苯基)-1,3-二胺基 苯(PDA)、笸以及笸衍生物、經苯基取代之環戊二烯衍生 物、酞環酮、六4吩(6T)、聚噻吩、喹吖啶酮(QA)(參見 T. Wakimoto等人,西元 1994年,Hamamatsu,77之國際無 機及有機電致發光專題論文發表會論文)以及經取代之喹 吖啶酮(MQA)、紅螢烯、DCJT (參見例如:C· Tang,SID 會議聖地牙哥;Proceedings,1996,181),共輛及非共輛 之聚合物,例如PPV及PPV衍生物、三烷氧基及三烷基 -19- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Weiss's Photoreceptors for Imaging Systems). These aromatic amines - 17 - This paper scale applies to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 1295902 A7 _ __B7 V. Description of invention (n) Groups can also be combined in polymers, starbursts (eg TCTA) , m-MTDATA 'Please refer to the article by Y. Kuwabara et al., Advanced Materials, Volume 6, page 677, 1974, Applied Physics Letters, vol. 65, p. 807, Y. Shirota et al., and spiral compounds. . Other examples are: copper g-cyanine (CuPc), (N,N,-diphenyl-N,Nf-bis-(4-phenylphenyl)-1, fluorene-biphenyl-4,4f-di Amine), distyryl arylene derivatives (DSA), anthraquinone, anthraquinone derivatives (eg NSD), quinacridone (QA), poly(3-methylthiophene) (P3MT) and derivatives thereof , hydrazine and anthracene derivatives, polythiophene (PT), 3,4,9,10-decane tetracarboxylic dianhydride (ptcda), PPV and some PPV derivatives, such as MEH-PPV, poly(9-vinyl Carbazole) (PVK), discotic liquid crystal material (HPT). The electron transport/emissive material is: Alq3, Gaq3, Inq3, Scq3, (q reference 8-hydroxyquinolinate or a derivative thereof) and other 8-hydroxyquinoline metal complexes such as Znq2, Beq2, Mgq2. ZnMq2, BeMq2, BAlq, and AlPrqs. These materials can be used as the organic electron transport layer 216 or the organic light-emitting layer 214. Other classes of electron-transporting materials are electron-deficient nitrogen-containing systems, such as oxygen-dosing similar to PBD (and many derivatives) and triazoles such as taz (1,2,4-triazole). These functional groups can also be incorporated into polymers, starbursts, and spiral compounds. Other classes are materials containing the functions of pyridine, pyrimidine, pyridin, and 1,2-diazatriene. Finally, it contains quinoline, quinoxaline, σ octyl phenyl, hydrazine and quinazoline functions "18" This paper scale applies to China National Standard (CNS) Α4 specifications (21〇X 297 public) _ 1295902 A7 B7 5. The material of the invention (12) is well known for its electron transport capabilities. Other materials are dimercaptohexaphene (DPS6T), bis-triisopropyldecyl hexazone (2D6T), quinone imine-zinc complex, pyridin (eg BNVP), styryl E derivative (eg BSA-1, BSA-2), non-planar distyryl arylene derivatives such as DPVBi (see C. Hosokawa and T. Kusumoto, BC 1994, Hamamatsu, 42 International Inorganic and Organic Electroluminescence Monographs published papers, cyano-substituted polymers such as cyano-PPV (PPV means poly(p-phenylene extended ethylene)) and cyano-PPV derivatives. The following materials are particularly suitable for the emissive layer as well as impurities: hydrazine, pyridine derivatives (eg ATP), imine-zinc complexes, sorghum (eg BNVP), styryl hydrazine derivatives (eg BSA-1, BSA-) 2), hydrazine, coumarin, DCM compound (DCM1, DCM2), distyryl arylene derivative (DSA), alkyl substituted stilbene benzene derivative (DSB), benzimidazole derivative ( For example, NBI), anthracycline derivatives (eg NSD), oxadiazole derivatives (eg OXD, OXD-1, OXD-7), N, N, N, Nf-tetra (m-methylbenzene) , 1,3-diaminobenzene (PDA), hydrazine and anthracene derivatives, phenyl substituted cyclopentadiene derivatives, anthranilone, hexa-4 (6T), polythiophene, quinacridine Ketone (QA) (see T. Wakimoto et al., 1994, Hamamatsu, 77, International Symposium on Inorganic and Organic Electroluminescence) and substituted quinacridone (MQA), red fluorene, DCJT (See for example: C. Tang, SID Conference, San Diego; Proceedings, 1996, 181), a total of non-common and non-common polymers, such as PPV and PPV derivatives, trialkoxy and Trialkyl -19- This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm)

裝 訂Binding

Claims (1)

Ι295^Θ2ΐ20166 ttt# -ί文申請專利範圍替換本(96年9月) ABC 96·年9· if 4日修(^)正本 六、申請專利範園 】· 一種電子裝置,包括·· 一第一電極,實質上具有一導電層(2〇4,3〇4); 形成於該導電層(2〇4,304)上之一非金屬層(206, 306); 形成於該非金屬層(206,306)上之一氟碳層(208, 308); 形成於該氟碳層(208,308)上之一結構(210,310); 以及 开/成於该結構(21〇,310)上一第二電極(220,311, 330) 〇 2·如申請專利範圍第1項之裝置,尚包括介於該導電層 (2〇4)與該非金屬層(206)之間之一緩衝層(205)。 3·如上述申請專利範圍之任一項之裝置,其中該非金屬層 (2〇6, 306)包括_氧化物。 4·如申明專利範圍第3項之裝置,其中該氧化物為依據選 自下列群組之一群組:3d過渡金屬群組、jIIA群組、 VA群、、且、稀土元素金屬群組或是其中之一組合。 5·如申明專利範圍第3項之裝置,纟中該非金屬層(206, 306)之氧化物與可由該導電層卩⑽,3〇4)形成之一潛在 氧化物不同。 3〇6)具有一單一層至20 nm範圍之一厚度 6’士申明專利範圍第5項之裝置,其中該非金屬層(206, 士申明專利範圍第5項之裝置,其中該導電層(204, 3〇4)包括一光反射性材料。 80471-960914.docΙ295^Θ2ΐ20166 ttt# - ί文Application for the replacement of patent scope (September 96) ABC 96·year 9· if 4 day repair (^) original six, application for patent garden] · An electronic device, including ·· An electrode substantially having a conductive layer (2〇4, 3〇4); a non-metal layer (206, 306) formed on the conductive layer (2〇4, 304); formed on the non-metal layer (206) , 306) a fluorocarbon layer (208, 308); a structure (210, 310) formed on the fluorocarbon layer (208, 308); and opening/forming on the structure (21〇, 310) a second electrode (220, 311, 330) 〇2. The device of claim 1, further comprising a buffer layer between the conductive layer (2〇4) and the non-metal layer (206) 205). A device according to any one of the preceding claims, wherein the non-metallic layer (2〇6, 306) comprises an _oxide. 4. The device of claim 3, wherein the oxide is selected from the group consisting of: a 3d transition metal group, a jIIA group, a VA group, and a rare earth metal group or Is one of the combinations. 5. The device of claim 3, wherein the oxide of the non-metallic layer (206, 306) is different from the latent oxide formed by the conductive layer 10(10), 3〇4). 3〇6) A device having a thickness from a single layer to a range of 20 nm in the range of 6's, and wherein the non-metallic layer (206, the device of claim 5, wherein the conductive layer (204) , 3〇4) includes a light reflective material. 80471-960914.doc X 297公釐) 1295902 、申請專利範圍 A B c D 8·如申請專利範圍第5項之裝置,其中該導電層(2〇4, 3〇4)形成一鏡子似表面。 9·如申請專利範圍第5項之裝置,其中該導電層(204, 304)包括鋁(A1)。 1〇·如申請專利範圍第5項之裝置,尚包括與該導電層(204) 或是該結構(2 1〇)揍觸之一基板(202)。 11 ·如申請專利範圍第5項之裝置,係一電致發光裝置 (0LED)、一電晶體或一感測器之部分。 12.—種用於形成如上述申請專利範圍之任一項之裝置之方 法,包括下列步驟: 提供一導電層(204,304)以作用為一第一電極; 形成一非金屬層(206)於該導電層(2〇4,304)上; 沈積一氟碳層(208,308)於該非金屬層(206,306)上; 幵y成複數層為该氟碳層(2 〇 8,3 0 8 )上之結構(2 1 0, 310);以及 形成該結構(210,310)上之一第二電極(22〇,311, 330) 〇 80471-960914.doc 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)X 297 mm) 1295902, the scope of the patent application A B c D 8 The device of claim 5, wherein the conductive layer (2〇4, 3〇4) forms a mirror-like surface. 9. The device of claim 5, wherein the conductive layer (204, 304) comprises aluminum (A1). 1. The device of claim 5, further comprising a substrate (202) that is in contact with the conductive layer (204) or the structure (2 1〇). 11. A device as claimed in claim 5, which is part of an electroluminescent device (OLED), a transistor or a sensor. 12. A method for forming a device according to any of the preceding claims, comprising the steps of: providing a conductive layer (204, 304) to function as a first electrode; forming a non-metallic layer (206) On the conductive layer (2〇4, 304); depositing a layer of fluorocarbon (208, 308) on the non-metal layer (206, 306); 幵 y into a plurality of layers of the fluorocarbon layer (2 〇 8, 3) 0 8 ) structure (2 1 0, 310); and forming a second electrode (22〇, 311, 330) on the structure (210, 310) 〇 80471-960914.doc This paper scale applies to Chinese national standards (CNS) A4 size (210 X 297 mm)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI491087B (en) * 2009-08-26 2015-07-01 Univ Nat Taiwan Suspending liquid or solution for organic optoelectronic device, making method thereof, and applications

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI491087B (en) * 2009-08-26 2015-07-01 Univ Nat Taiwan Suspending liquid or solution for organic optoelectronic device, making method thereof, and applications

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