JP2005510874A5 - - Google Patents
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- Publication number
- JP2005510874A5 JP2005510874A5 JP2003548300A JP2003548300A JP2005510874A5 JP 2005510874 A5 JP2005510874 A5 JP 2005510874A5 JP 2003548300 A JP2003548300 A JP 2003548300A JP 2003548300 A JP2003548300 A JP 2003548300A JP 2005510874 A5 JP2005510874 A5 JP 2005510874A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier
- conformal
- seed
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 28
- 238000000034 method Methods 0.000 claims 22
- 238000002347 injection Methods 0.000 claims 15
- 239000007924 injection Substances 0.000 claims 15
- 238000002513 implantation Methods 0.000 claims 11
- 239000000463 material Substances 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 230000008018 melting Effects 0.000 claims 3
- 238000002844 melting Methods 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000007943 implant Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/994,358 US6703307B2 (en) | 2001-11-26 | 2001-11-26 | Method of implantation after copper seed deposition |
| PCT/US2002/032554 WO2003046978A2 (en) | 2001-11-26 | 2002-10-11 | Method of implantation after copper seed deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005510874A JP2005510874A (ja) | 2005-04-21 |
| JP2005510874A5 true JP2005510874A5 (https=) | 2006-01-05 |
| JP4685352B2 JP4685352B2 (ja) | 2011-05-18 |
Family
ID=25540575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003548300A Expired - Fee Related JP4685352B2 (ja) | 2001-11-26 | 2002-10-11 | 集積回路の製造方法、銅シードの堆積を行った後に行われる注入方法、バリア／シード界面層の形成方法、及び集積回路にビアを形成する方法。 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6703307B2 (https=) |
| EP (1) | EP1449248A2 (https=) |
| JP (1) | JP4685352B2 (https=) |
| KR (1) | KR20040064288A (https=) |
| CN (1) | CN100447978C (https=) |
| AU (1) | AU2002340177A1 (https=) |
| WO (1) | WO2003046978A2 (https=) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6776792B1 (en) | 1997-04-24 | 2004-08-17 | Advanced Cardiovascular Systems Inc. | Coated endovascular stent |
| US6783793B1 (en) | 2000-10-26 | 2004-08-31 | Advanced Cardiovascular Systems, Inc. | Selective coating of medical devices |
| US6565659B1 (en) | 2001-06-28 | 2003-05-20 | Advanced Cardiovascular Systems, Inc. | Stent mounting assembly and a method of using the same to coat a stent |
| US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7115991B1 (en) | 2001-10-22 | 2006-10-03 | Lsi Logic Corporation | Method for creating barriers for copper diffusion |
| US6835655B1 (en) * | 2001-11-26 | 2004-12-28 | Advanced Micro Devices, Inc. | Method of implanting copper barrier material to improve electrical performance |
| US20030118798A1 (en) * | 2001-12-25 | 2003-06-26 | Nec Electronics Corporation | Copper interconnection and the method for fabricating the same |
| US7115498B1 (en) * | 2002-04-16 | 2006-10-03 | Advanced Micro Devices, Inc. | Method of ultra-low energy ion implantation to form alloy layers in copper |
| US6861349B1 (en) * | 2002-05-15 | 2005-03-01 | Advanced Micro Devices, Inc. | Method of forming an adhesion layer with an element reactive with a barrier layer |
| US6992004B1 (en) * | 2002-07-31 | 2006-01-31 | Advanced Micro Devices, Inc. | Implanted barrier layer to improve line reliability and method of forming same |
| US6861758B2 (en) * | 2002-08-30 | 2005-03-01 | Intel Corporation | Structure and manufacturing process of localized shunt to reduce electromigration failure of copper dual damascene process |
| US20040229453A1 (en) * | 2003-05-15 | 2004-11-18 | Jsr Micro, Inc. | Methods of pore sealing and metal encapsulation in porous low k interconnect |
| US7198675B2 (en) | 2003-09-30 | 2007-04-03 | Advanced Cardiovascular Systems | Stent mandrel fixture and method for selectively coating surfaces of a stent |
| US7169706B2 (en) * | 2003-10-16 | 2007-01-30 | Advanced Micro Devices, Inc. | Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition |
| US6998343B1 (en) * | 2003-11-24 | 2006-02-14 | Lsi Logic Corporation | Method for creating barrier layers for copper diffusion |
| US7563324B1 (en) | 2003-12-29 | 2009-07-21 | Advanced Cardiovascular Systems Inc. | System and method for coating an implantable medical device |
| DE102004003863B4 (de) * | 2004-01-26 | 2009-01-29 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Herstellung eingebetteter Metallleitungen mit einer erhöhten Widerstandsfähigkeit gegen durch Belastung hervorgerufenen Materialtransport |
| US7553377B1 (en) | 2004-04-27 | 2009-06-30 | Advanced Cardiovascular Systems, Inc. | Apparatus and method for electrostatic coating of an abluminal stent surface |
| US7632307B2 (en) | 2004-12-16 | 2009-12-15 | Advanced Cardiovascular Systems, Inc. | Abluminal, multilayer coating constructs for drug-delivery stents |
| US7329599B1 (en) * | 2005-03-16 | 2008-02-12 | Advanced Micro Devices, Inc. | Method for fabricating a semiconductor device |
| US20060267113A1 (en) * | 2005-05-27 | 2006-11-30 | Tobin Philip J | Semiconductor device structure and method therefor |
| US7867547B2 (en) | 2005-12-19 | 2011-01-11 | Advanced Cardiovascular Systems, Inc. | Selectively coating luminal surfaces of stents |
| US8003156B2 (en) | 2006-05-04 | 2011-08-23 | Advanced Cardiovascular Systems, Inc. | Rotatable support elements for stents |
| US8603530B2 (en) | 2006-06-14 | 2013-12-10 | Abbott Cardiovascular Systems Inc. | Nanoshell therapy |
| US8048448B2 (en) | 2006-06-15 | 2011-11-01 | Abbott Cardiovascular Systems Inc. | Nanoshells for drug delivery |
| US8017237B2 (en) | 2006-06-23 | 2011-09-13 | Abbott Cardiovascular Systems, Inc. | Nanoshells on polymers |
| US20080157375A1 (en) * | 2006-12-27 | 2008-07-03 | Dongbu Hitek Co., Ltd. | Semiconductor device having a metal interconnection and method of fabricating the same |
| US7750852B2 (en) * | 2007-04-13 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8048441B2 (en) | 2007-06-25 | 2011-11-01 | Abbott Cardiovascular Systems, Inc. | Nanobead releasing medical devices |
| US20100007022A1 (en) * | 2007-08-03 | 2010-01-14 | Nobuaki Tarumi | Semiconductor device and manufacturing method thereof |
| US7772110B2 (en) * | 2007-09-28 | 2010-08-10 | Tokyo Electron Limited | Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing |
| JP2009099585A (ja) * | 2007-10-12 | 2009-05-07 | Panasonic Corp | 埋め込み配線の形成方法 |
| US7737013B2 (en) * | 2007-11-06 | 2010-06-15 | Varian Semiconductor Equipment Associates, Inc. | Implantation of multiple species to address copper reliability |
| KR101433899B1 (ko) * | 2008-04-03 | 2014-08-29 | 삼성전자주식회사 | 기판 식각부의 금속층 형성방법 및 이를 이용하여 형성된금속층을 갖는 기판 및 구조물 |
| CN101661922B (zh) * | 2009-07-30 | 2014-04-09 | 广州市香港科大霍英东研究院 | 一种高深宽比硅通孔铜互连线及其制备方法 |
| KR101713920B1 (ko) * | 2011-09-29 | 2017-03-09 | 인텔 코포레이션 | 반도체 응용을 위한 양전성 금속 포함 층 |
| TWI584441B (zh) * | 2013-02-26 | 2017-05-21 | 旺宏電子股份有限公司 | 內連線結構及其形成方法 |
| US20140273436A1 (en) * | 2013-03-15 | 2014-09-18 | Globalfoundries Inc. | Methods of forming barrier layers for conductive copper structures |
| DE102014205234A1 (de) * | 2014-03-20 | 2015-09-24 | Bayerische Motoren Werke Aktiengesellschaft | Separator für eine galvanische Zelle, galvanische Zelle umfassend den Separator, Batterie enthaltend wenigstens zwei galvanische Zellen, mobile Konsumer-Geräte und Kraftfahrzeug mit der Batterie |
| KR102211741B1 (ko) * | 2014-07-21 | 2021-02-03 | 삼성전기주식회사 | 인쇄회로기판 및 인쇄회로기판의 제조 방법 |
| CN105899003B (zh) | 2015-11-06 | 2019-11-26 | 武汉光谷创元电子有限公司 | 单层电路板、多层电路板以及它们的制造方法 |
| US9520284B1 (en) * | 2015-11-13 | 2016-12-13 | Varian Semiconductor Equipment Associates, Inc. | Ion beam activated directional deposition |
| US9947621B2 (en) | 2016-08-05 | 2018-04-17 | International Business Machines Corporation | Structure and method to reduce copper loss during metal cap formation |
| CN109216261B (zh) * | 2017-07-03 | 2021-07-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US10763168B2 (en) | 2017-11-17 | 2020-09-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure with doped via plug and method for forming the same |
| US20240222191A1 (en) * | 2022-12-28 | 2024-07-04 | Winbond Electronics Corp. | Semiconductor structure and method of forming the same |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4908275A (en) | 1987-03-04 | 1990-03-13 | Nippon Mining Co., Ltd. | Film carrier and method of manufacturing same |
| JPH01265540A (ja) * | 1988-04-15 | 1989-10-23 | Sony Corp | 半導体装置の製造方法 |
| JPH0750697B2 (ja) | 1989-02-20 | 1995-05-31 | 株式会社東芝 | 半導体装置の製造方法 |
| US5243222A (en) | 1991-04-05 | 1993-09-07 | International Business Machines Corporation | Copper alloy metallurgies for VLSI interconnection structures |
| JP2534434B2 (ja) | 1992-04-30 | 1996-09-18 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 耐酸化性化合物およびその製造方法 |
| KR960010056B1 (ko) | 1992-12-10 | 1996-07-25 | 삼성전자 주식회사 | 반도체장치 및 그 제조 방법 |
| US5654245A (en) | 1993-03-23 | 1997-08-05 | Sharp Microelectronics Technology, Inc. | Implantation of nucleating species for selective metallization and products thereof |
| DE69637333T2 (de) | 1995-06-27 | 2008-10-02 | International Business Machines Corp. | Kupferlegierungen für Chipverbindungen und Herstellungsverfahren |
| US6268291B1 (en) * | 1995-12-29 | 2001-07-31 | International Business Machines Corporation | Method for forming electromigration-resistant structures by doping |
| KR100243286B1 (ko) | 1997-03-05 | 2000-03-02 | 윤종용 | 반도체 장치의 제조방법 |
| US5770517A (en) | 1997-03-21 | 1998-06-23 | Advanced Micro Devices, Inc. | Semiconductor fabrication employing copper plug formation within a contact area |
| US5969422A (en) | 1997-05-15 | 1999-10-19 | Advanced Micro Devices, Inc. | Plated copper interconnect structure |
| US6069068A (en) | 1997-05-30 | 2000-05-30 | International Business Machines Corporation | Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity |
| US5821168A (en) | 1997-07-16 | 1998-10-13 | Motorola, Inc. | Process for forming a semiconductor device |
| US5882738A (en) | 1997-12-19 | 1999-03-16 | Advanced Micro Devices, Inc. | Apparatus and method to improve electromigration performance by use of amorphous barrier layer |
| US6344413B1 (en) | 1997-12-22 | 2002-02-05 | Motorola Inc. | Method for forming a semiconductor device |
| KR100404649B1 (ko) | 1998-02-23 | 2003-11-10 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체장치 및 그 제조방법 |
| JP3955386B2 (ja) | 1998-04-09 | 2007-08-08 | 富士通株式会社 | 半導体装置及びその製造方法 |
| US6156638A (en) | 1998-04-10 | 2000-12-05 | Micron Technology, Inc. | Integrated circuitry and method of restricting diffusion from one material to another |
| US6181012B1 (en) | 1998-04-27 | 2001-01-30 | International Business Machines Corporation | Copper interconnection structure incorporating a metal seed layer |
| US6015749A (en) * | 1998-05-04 | 2000-01-18 | Taiwan Semiconductor Manufacturing Company | Method to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedure |
| JPH11330001A (ja) * | 1998-05-21 | 1999-11-30 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US6461675B2 (en) | 1998-07-10 | 2002-10-08 | Cvc Products, Inc. | Method for forming a copper film on a substrate |
| JP2000164717A (ja) * | 1998-09-25 | 2000-06-16 | Sanyo Electric Co Ltd | 半導体装置及び半導体装置の製造方法 |
| US6144096A (en) | 1998-10-05 | 2000-11-07 | Advanced Micro Devices, Inc. | Low resistivity semiconductor barrier layers and manufacturing method therefor |
| US6117770A (en) | 1998-10-08 | 2000-09-12 | Advanced Micro Devices, Inc. | Method for implanting semiconductor conductive layers |
| KR100385042B1 (ko) | 1998-12-03 | 2003-06-18 | 인터내셔널 비지네스 머신즈 코포레이션 | 내 일렉트로 마이그레이션의 구조물을 도핑으로 형성하는 방법 |
| US6294836B1 (en) | 1998-12-22 | 2001-09-25 | Cvc Products Inc. | Semiconductor chip interconnect barrier material and fabrication method |
| US6096648A (en) | 1999-01-26 | 2000-08-01 | Amd | Copper/low dielectric interconnect formation with reduced electromigration |
| KR100309642B1 (ko) | 1999-01-29 | 2001-09-26 | 김영환 | 반도체장치의 콘택 형성방법 |
| JP3910752B2 (ja) | 1999-03-23 | 2007-04-25 | 株式会社東芝 | 半導体装置の製造方法 |
| US6521532B1 (en) | 1999-07-22 | 2003-02-18 | James A. Cunningham | Method for making integrated circuit including interconnects with enhanced electromigration resistance |
| US6440849B1 (en) | 1999-10-18 | 2002-08-27 | Agere Systems Guardian Corp. | Microstructure control of copper interconnects |
| US6169041B1 (en) * | 1999-11-01 | 2001-01-02 | United Microelectronics Corp. | Method for enhancing the reliability of a dielectric layer of a semiconductor wafer |
| CN1425196A (zh) | 1999-11-24 | 2003-06-18 | 霍尼韦尔国际公司 | 导电互连 |
| US6376370B1 (en) * | 2000-01-18 | 2002-04-23 | Micron Technology, Inc. | Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy |
| US6420262B1 (en) | 2000-01-18 | 2002-07-16 | Micron Technology, Inc. | Structures and methods to enhance copper metallization |
| US6225221B1 (en) * | 2000-02-10 | 2001-05-01 | Chartered Semiconductor Manufacturing Ltd. | Method to deposit a copper seed layer for dual damascene interconnects |
| US6627995B2 (en) | 2000-03-03 | 2003-09-30 | Cvc Products, Inc. | Microelectronic interconnect material with adhesion promotion layer and fabrication method |
| US6410383B1 (en) | 2000-03-16 | 2002-06-25 | Sharp Laboratories Of America, Inc. | Method of forming conducting diffusion barriers |
| US6426289B1 (en) | 2000-03-24 | 2002-07-30 | Micron Technology, Inc. | Method of fabricating a barrier layer associated with a conductor layer in damascene structures |
| WO2001088972A1 (en) | 2000-05-15 | 2001-11-22 | Asm Microchemistry Oy | Process for producing integrated circuits |
| US6749699B2 (en) | 2000-08-09 | 2004-06-15 | Olin Corporation | Silver containing copper alloy |
| JP2002075994A (ja) | 2000-08-24 | 2002-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US6977224B2 (en) | 2000-12-28 | 2005-12-20 | Intel Corporation | Method of electroless introduction of interconnect structures |
| US6534865B1 (en) * | 2001-06-12 | 2003-03-18 | Advanced Micro Devices, Inc. | Method of enhanced fill of vias and trenches |
-
2001
- 2001-11-26 US US09/994,358 patent/US6703307B2/en not_active Expired - Fee Related
-
2002
- 2002-10-11 JP JP2003548300A patent/JP4685352B2/ja not_active Expired - Fee Related
- 2002-10-11 AU AU2002340177A patent/AU2002340177A1/en not_active Abandoned
- 2002-10-11 EP EP02778522A patent/EP1449248A2/en not_active Withdrawn
- 2002-10-11 CN CNB028234413A patent/CN100447978C/zh not_active Expired - Fee Related
- 2002-10-11 WO PCT/US2002/032554 patent/WO2003046978A2/en not_active Ceased
- 2002-10-11 KR KR10-2004-7007988A patent/KR20040064288A/ko not_active Ceased
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