JP2005509176A5 - - Google Patents

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Publication number
JP2005509176A5
JP2005509176A5 JP2002575706A JP2002575706A JP2005509176A5 JP 2005509176 A5 JP2005509176 A5 JP 2005509176A5 JP 2002575706 A JP2002575706 A JP 2002575706A JP 2002575706 A JP2002575706 A JP 2002575706A JP 2005509176 A5 JP2005509176 A5 JP 2005509176A5
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JP
Japan
Prior art keywords
optionally substituted
carbon atoms
group
bridged
ester
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002575706A
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English (en)
Japanese (ja)
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JP2005509176A (ja
JP4554889B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2002/007940 external-priority patent/WO2002077709A2/en
Publication of JP2005509176A publication Critical patent/JP2005509176A/ja
Publication of JP2005509176A5 publication Critical patent/JP2005509176A5/ja
Application granted granted Critical
Publication of JP4554889B2 publication Critical patent/JP4554889B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002575706A 2001-03-22 2002-03-14 フォトレジスト組成物 Expired - Lifetime JP4554889B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27787401P 2001-03-22 2001-03-22
PCT/US2002/007940 WO2002077709A2 (en) 2001-03-22 2002-03-14 Photoresist composition

Publications (3)

Publication Number Publication Date
JP2005509176A JP2005509176A (ja) 2005-04-07
JP2005509176A5 true JP2005509176A5 (cg-RX-API-DMAC7.html) 2005-12-22
JP4554889B2 JP4554889B2 (ja) 2010-09-29

Family

ID=23062731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002575706A Expired - Lifetime JP4554889B2 (ja) 2001-03-22 2002-03-14 フォトレジスト組成物

Country Status (4)

Country Link
US (1) US6855475B2 (cg-RX-API-DMAC7.html)
JP (1) JP4554889B2 (cg-RX-API-DMAC7.html)
AU (1) AU2002254232A1 (cg-RX-API-DMAC7.html)
WO (1) WO2002077709A2 (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030082477A1 (en) * 2001-03-22 2003-05-01 Shipley Company, L.L.C Photoresist composition
JP2002338633A (ja) * 2001-05-21 2002-11-27 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料、及びパターン形成方法
JP4516250B2 (ja) * 2001-09-13 2010-08-04 パナソニック株式会社 パターン形成材料及びパターン形成方法
CN1527136B (zh) * 2003-03-05 2014-02-26 希普利公司 光致抗蚀剂组合物
WO2004088428A1 (ja) * 2003-03-28 2004-10-14 Tokyo Ohka Kogyo Co. Ltd. ホトレジスト組成物及びそれを用いたレジストパターン形成方法
JP4644458B2 (ja) * 2003-09-30 2011-03-02 富士フイルム株式会社 平版印刷版原版および平版印刷方法
US7442487B2 (en) * 2003-12-30 2008-10-28 Intel Corporation Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists
US7608390B2 (en) * 2006-08-04 2009-10-27 International Business Machines Corporation Top antireflective coating composition containing hydrophobic and acidic groups
JP5035560B2 (ja) * 2007-07-04 2012-09-26 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
WO2009018217A2 (en) * 2007-07-30 2009-02-05 Brewer Science Inc. Non-covalently crosslinkable materials for photolithography processes
EP2789677A1 (en) 2013-04-12 2014-10-15 Kymi Baltic Consulting Oü Torrefaction plant, its operation and maintenance
KR102471268B1 (ko) * 2014-10-02 2022-11-25 도오꾜오까고오교 가부시끼가이샤 레지스트 패턴 형성 방법

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DE4207263A1 (de) 1992-03-07 1993-09-09 Hoechst Ag Niedermolekulare saeurespaltbare verbindungen mit 2,2-bis-trifluormethyl-oxaethano-brueckengliedern und deren verwendung
DE4207261C2 (de) 1992-03-07 2000-03-16 Clariant Gmbh Styrol-Monomere mit 2,2-Bis-trifluormethyl-oxaethano-Brückengliedern, Polymere und deren Verwendung
US6200725B1 (en) * 1995-06-28 2001-03-13 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3297272B2 (ja) * 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3748596B2 (ja) * 1995-08-02 2006-02-22 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3804138B2 (ja) 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
US6057083A (en) * 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
JPH11286549A (ja) * 1998-02-05 1999-10-19 Canon Inc 感光性樹脂及び該感光性樹脂を用いたレジスト、該レジストを用いた露光装置及び露光方法及び該露光方法で得られた半導体装置
US6136501A (en) * 1998-08-28 2000-10-24 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
WO2000017712A1 (en) 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
JP3305293B2 (ja) * 1999-03-09 2002-07-22 松下電器産業株式会社 パターン形成方法
US6673523B2 (en) * 1999-03-09 2004-01-06 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US6692888B1 (en) * 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
JP3861976B2 (ja) * 2000-02-16 2006-12-27 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
US6835524B2 (en) * 2000-02-16 2004-12-28 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
JP3797415B2 (ja) * 2000-02-17 2006-07-19 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6579658B2 (en) * 2000-02-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
US6379861B1 (en) 2000-02-22 2002-04-30 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
US6406828B1 (en) 2000-02-24 2002-06-18 Shipley Company, L.L.C. Polymer and photoresist compositions
EP1275666A4 (en) * 2000-04-04 2007-10-24 Daikin Ind Ltd NEW FLUOROPOLYMER WITH ACID-ACTIVE GROUP AND CHEMICALLY REINFORCED PHOTORESIST COMPOSITIONS THAT CONTAIN THEM
JP3502327B2 (ja) * 2000-04-19 2004-03-02 松下電器産業株式会社 パターン形成材料及びパターン形成方法
AU2001287147A1 (en) * 2000-09-08 2002-03-22 Shipley Company, L.L.C. Fluorinated phenolic polymers and photoresist compositions comprising same
WO2002021213A2 (en) * 2000-09-08 2002-03-14 Shipley Company, L.L.C. Novel polymers and photoresist compositions for short wavelength imaging
US6749986B2 (en) 2000-09-08 2004-06-15 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
JP4201240B2 (ja) * 2001-02-22 2008-12-24 東京応化工業株式会社 新規不飽和カルボン酸エステル及びそれを用いたホトレジスト組成物
JP3904064B2 (ja) * 2001-02-28 2007-04-11 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US20030082477A1 (en) 2001-03-22 2003-05-01 Shipley Company, L.L.C Photoresist composition
CN1263816C (zh) 2001-07-19 2006-07-12 中国科学院长春应用化学研究所 一种可降解的耐水耐油保护膜的制备方法
DE10208786B4 (de) * 2002-02-28 2006-02-09 Infineon Technologies Ag Verfahren zur Modifikation von Resiststrukturen und Resistschichten aus wässriger Phase

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