JP2000298347A5 - - Google Patents

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Publication number
JP2000298347A5
JP2000298347A5 JP1999283271A JP28327199A JP2000298347A5 JP 2000298347 A5 JP2000298347 A5 JP 2000298347A5 JP 1999283271 A JP1999283271 A JP 1999283271A JP 28327199 A JP28327199 A JP 28327199A JP 2000298347 A5 JP2000298347 A5 JP 2000298347A5
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JP
Japan
Prior art keywords
photoresist
group
polymer
carbon atoms
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999283271A
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English (en)
Japanese (ja)
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JP2000298347A (ja
JP4421710B2 (ja
Filing date
Publication date
Priority claimed from US09/143,462 external-priority patent/US6136501A/en
Application filed filed Critical
Publication of JP2000298347A publication Critical patent/JP2000298347A/ja
Publication of JP2000298347A5 publication Critical patent/JP2000298347A5/ja
Application granted granted Critical
Publication of JP4421710B2 publication Critical patent/JP4421710B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP28327199A 1998-08-28 1999-08-30 新規なポリマー及びそれらを含有してなるフォトレジスト組成物 Expired - Lifetime JP4421710B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US143462 1988-01-13
US09/143,462 US6136501A (en) 1998-08-28 1998-08-28 Polymers and photoresist compositions comprising same

Publications (3)

Publication Number Publication Date
JP2000298347A JP2000298347A (ja) 2000-10-24
JP2000298347A5 true JP2000298347A5 (cg-RX-API-DMAC7.html) 2006-10-12
JP4421710B2 JP4421710B2 (ja) 2010-02-24

Family

ID=22504190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28327199A Expired - Lifetime JP4421710B2 (ja) 1998-08-28 1999-08-30 新規なポリマー及びそれらを含有してなるフォトレジスト組成物

Country Status (3)

Country Link
US (1) US6136501A (cg-RX-API-DMAC7.html)
JP (1) JP4421710B2 (cg-RX-API-DMAC7.html)
KR (1) KR100735889B1 (cg-RX-API-DMAC7.html)

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EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
KR101701189B1 (ko) 2009-06-08 2017-02-01 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토리소그래피 방법
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JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
EP2472329B1 (en) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
US9851639B2 (en) 2012-03-31 2017-12-26 International Business Machines Corporation Photoacid generating polymers containing a urethane linkage for lithography
US9171720B2 (en) 2013-01-19 2015-10-27 Rohm And Haas Electronic Materials Llc Hardmask surface treatment
US9136123B2 (en) 2013-01-19 2015-09-15 Rohm And Haas Electronic Materials Llc Hardmask surface treatment
JP6421449B2 (ja) 2013-05-20 2018-11-14 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、酸発生体及び化合物
TWI634385B (zh) 2013-05-20 2018-09-01 Jsr股份有限公司 感放射線性樹脂組成物、光阻圖型形成方法、酸產生物及化合物
WO2014188762A1 (ja) 2013-05-24 2014-11-27 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、酸拡散制御剤、化合物及び化合物の製造方法
KR20170059991A (ko) 2014-09-17 2017-05-31 제이에스알 가부시끼가이샤 패턴 형성 방법
WO2016043198A1 (ja) 2014-09-17 2016-03-24 Jsr株式会社 パターン形成方法
KR102471268B1 (ko) * 2014-10-02 2022-11-25 도오꾜오까고오교 가부시끼가이샤 레지스트 패턴 형성 방법
US9244345B1 (en) 2014-11-06 2016-01-26 International Business Machines Corporation Non-ionic photo-acid generating polymers for resist applications
CN106094431B (zh) 2015-04-30 2020-06-26 罗门哈斯电子材料韩国有限公司 光致抗蚀剂组合物和方法
KR102648061B1 (ko) 2015-12-01 2024-03-18 제이에스알 가부시끼가이샤 감방사선성 조성물, 패턴 형성 방법 및 감방사선성 산 발생제
US10113024B2 (en) 2015-12-21 2018-10-30 Dow Global Technologies Llc Arylcyclobutenes
US10120277B2 (en) 2016-02-19 2018-11-06 Jsr Corporation Radiation-sensitive composition and pattern-forming method
KR20170098173A (ko) 2016-02-19 2017-08-29 제이에스알 가부시끼가이샤 감방사선성 조성물 및 패턴 형성 방법
KR102341492B1 (ko) 2016-03-03 2021-12-22 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 감방사선성 산 발생제 및 화합물
JPWO2018043506A1 (ja) 2016-08-29 2019-06-24 Jsr株式会社 感放射線性組成物及びパターン形成方法
US11480878B2 (en) 2016-08-31 2022-10-25 Rohm And Haas Electronic Materials Korea Ltd. Monomers, polymers and photoresist compositions
EP3564752A4 (en) 2016-12-28 2020-08-26 JSR Corporation RADIATION-SENSITIVE COMPOSITION, STRUCTURE FORMATION PROCESS AND METAL OXIDE
KR20190099428A (ko) 2016-12-28 2019-08-27 제이에스알 가부시끼가이샤 감방사선성 조성물, 패턴 형성 방법 그리고 금속 함유 수지 및 그의 제조 방법
CN108264605A (zh) 2016-12-30 2018-07-10 罗门哈斯电子材料韩国有限公司 单体、聚合物和光致抗蚀剂组合物
JPWO2018139109A1 (ja) 2017-01-26 2019-11-14 Ｊｓｒ株式会社 感放射線性組成物及びパターン形成方法
JPWO2018168221A1 (ja) 2017-03-13 2020-01-16 Jsr株式会社 感放射線性組成物及びパターン形成方法
CN110325916B (zh) 2017-03-30 2023-04-11 Jsr株式会社 感放射线性组合物及抗蚀剂图案形成方法
JP7071660B2 (ja) 2017-04-11 2022-05-19 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
KR20200039665A (ko) 2017-08-10 2020-04-16 제이에스알 가부시끼가이샤 감방사선성 조성물 및 레지스트 패턴 형성 방법
JP6730417B2 (ja) 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物および方法
WO2022202402A1 (ja) 2021-03-26 2022-09-29 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物
WO2022209816A1 (ja) 2021-04-01 2022-10-06 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物
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US20240411228A1 (en) 2021-11-16 2024-12-12 Jsr Corporation Production method for semiconductor substrates
KR20250078445A (ko) 2022-09-28 2025-06-02 제이에스알 가부시키가이샤 레지스트 패턴 형성 방법

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