JP2005505140A - ビーム放射型半導体チップ、該半導体チップの製造法並びにビーム放射型構成エレメント - Google Patents
ビーム放射型半導体チップ、該半導体チップの製造法並びにビーム放射型構成エレメント Download PDFInfo
- Publication number
- JP2005505140A JP2005505140A JP2003533356A JP2003533356A JP2005505140A JP 2005505140 A JP2005505140 A JP 2005505140A JP 2003533356 A JP2003533356 A JP 2003533356A JP 2003533356 A JP2003533356 A JP 2003533356A JP 2005505140 A JP2005505140 A JP 2005505140A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor chip
- multilayer structure
- window layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10148227.2A DE10148227B4 (de) | 2001-09-28 | 2001-09-28 | Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement |
PCT/DE2002/003668 WO2003030271A2 (de) | 2001-09-28 | 2002-09-27 | Strahlungsemittierender halbleiterchip, verfahren zu dessen herstellung und strahlungsemittierendes bauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005505140A true JP2005505140A (ja) | 2005-02-17 |
Family
ID=7700864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003533356A Pending JP2005505140A (ja) | 2001-09-28 | 2002-09-27 | ビーム放射型半導体チップ、該半導体チップの製造法並びにビーム放射型構成エレメント |
Country Status (5)
Country | Link |
---|---|
US (1) | US7446344B2 (de) |
EP (1) | EP1430544B1 (de) |
JP (1) | JP2005505140A (de) |
DE (2) | DE10148227B4 (de) |
WO (1) | WO2003030271A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101484461B1 (ko) * | 2006-12-21 | 2015-01-20 | 코닌클리케 필립스 엔.브이. | 성형된 파장 변환기를 가지는 발광 장치 |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3715627B2 (ja) * | 2002-01-29 | 2005-11-09 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP3705791B2 (ja) * | 2002-03-14 | 2005-10-12 | 株式会社東芝 | 半導体発光素子および半導体発光装置 |
TWI236772B (en) * | 2002-03-14 | 2005-07-21 | Toshiba Corp | Semiconductor light emitting element and semiconductor light emitting device |
US6995032B2 (en) | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
WO2004032248A2 (de) * | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
DE60311678T2 (de) | 2002-12-20 | 2007-11-22 | Cree, Inc. | Verfahren zur herstellung von halbleitervorrichtungen mit mesastrukturen und vielfachen passivierungsschichten und verwandte vorrichtungen |
DE10345516B4 (de) * | 2003-09-30 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung aussendendes Halbleiterbauelement und Verfahren zu seiner Herstellung |
DE10345515A1 (de) * | 2003-09-30 | 2005-05-04 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung aussendendes Halbleiterbauelement und Verfahren zu seiner Herstellung |
US7008861B2 (en) | 2003-12-11 | 2006-03-07 | Cree, Inc. | Semiconductor substrate assemblies and methods for preparing and dicing the same |
KR20070039110A (ko) * | 2004-07-30 | 2007-04-11 | 노바룩스 인코포레이티드 | 표면 발산 레이저 어레이의 접합 절연을 위한 장치, 시스템및 방법 |
KR100664988B1 (ko) * | 2004-11-04 | 2007-01-09 | 삼성전기주식회사 | 광추출효율이 향상된 반도체 발광소자 |
KR100649769B1 (ko) * | 2005-12-28 | 2006-11-27 | 삼성전기주식회사 | 반도체 발광 다이오드 및 그 제조 방법 |
JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
JP5214121B2 (ja) * | 2006-08-07 | 2013-06-19 | 新光電気工業株式会社 | 発光装置 |
US7789531B2 (en) | 2006-10-02 | 2010-09-07 | Illumitex, Inc. | LED system and method |
WO2008069074A1 (ja) | 2006-12-07 | 2008-06-12 | Kabushiki Kaisha Toshiba | 半導体装置及び半導体装置の製造方法 |
JP4290745B2 (ja) * | 2007-03-16 | 2009-07-08 | 豊田合成株式会社 | Iii−v族半導体素子の製造方法 |
TWI344707B (en) * | 2007-04-20 | 2011-07-01 | Huga Optotech Inc | Semiconductor light-emitting device with high light extraction efficiency |
US7674689B2 (en) * | 2007-09-20 | 2010-03-09 | Infineon Technologies Ag | Method of making an integrated circuit including singulating a semiconductor wafer |
EP2240968A1 (de) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System und verfahren zur bildung einer emitterschicht |
US8287346B2 (en) * | 2008-11-03 | 2012-10-16 | Cfph, Llc | Late game series information change |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
TWI470823B (zh) | 2009-02-11 | 2015-01-21 | Epistar Corp | 發光元件及其製造方法 |
DE102009019161A1 (de) | 2009-04-28 | 2010-11-04 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
DE102009032486A1 (de) * | 2009-07-09 | 2011-01-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US9502612B2 (en) | 2009-09-20 | 2016-11-22 | Viagan Ltd. | Light emitting diode package with enhanced heat conduction |
KR101658838B1 (ko) * | 2010-02-04 | 2016-10-04 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR101028277B1 (ko) * | 2010-05-25 | 2011-04-11 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛 |
DE102010027679A1 (de) | 2010-07-20 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE102010040062B4 (de) | 2010-08-31 | 2014-05-22 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Eine Substratzerteilungstechnik für das Separieren von Halbleiterchips mit geringerem Flächenverbrauch |
DE102010036180A1 (de) | 2010-09-02 | 2012-03-08 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
US8941137B2 (en) | 2011-03-06 | 2015-01-27 | Mordehai MARGALIT | Light emitting diode package and method of manufacture |
WO2013148955A1 (en) * | 2012-03-28 | 2013-10-03 | Sensor Electronic Technology, Inc. | Light emitting device substrate with inclined sidewalls |
US10096742B2 (en) | 2012-03-28 | 2018-10-09 | Sensor Electronic Technology, Inc. | Light emitting device substrate with inclined sidewalls |
JP2013258231A (ja) * | 2012-06-12 | 2013-12-26 | Disco Abrasive Syst Ltd | 光デバイスの加工方法 |
JP2013258234A (ja) | 2012-06-12 | 2013-12-26 | Disco Abrasive Syst Ltd | 光デバイスの加工方法 |
JP6025410B2 (ja) | 2012-06-12 | 2016-11-16 | 株式会社ディスコ | 光デバイスの加工方法 |
JP6029338B2 (ja) | 2012-06-12 | 2016-11-24 | 株式会社ディスコ | 光デバイスの加工方法 |
DE102013104270A1 (de) | 2013-04-26 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
DE102013111503B4 (de) * | 2013-10-18 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zur Vereinzelung von Halbleiterchips |
KR20150101783A (ko) * | 2014-02-27 | 2015-09-04 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조 방법 |
CA2949975C (en) * | 2014-05-30 | 2023-02-21 | Morgan Charles RODWELL | Configurations and methods of dewatering crude oil |
EP3465780B1 (de) | 2016-06-07 | 2021-12-22 | Plessey Semiconductors Limited | Lichtemittierende vorrichtung und herstellungsverfahren |
US10535588B2 (en) * | 2017-01-18 | 2020-01-14 | Stmicroelectronics, Inc. | Die with metallized sidewall and method of manufacturing |
US11894313B2 (en) * | 2020-10-27 | 2024-02-06 | Texas Instruments Incorporated | Substrate processing and packaging |
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FR2294549A1 (fr) * | 1974-12-09 | 1976-07-09 | Radiotechnique Compelec | Procede de realisation de dispositifs optoelectroniques |
US5187547A (en) | 1988-05-18 | 1993-02-16 | Sanyo Electric Co., Ltd. | Light emitting diode device and method for producing same |
US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
JPH04236468A (ja) * | 1991-01-18 | 1992-08-25 | Toshiba Corp | 光通信用発光ダイオ−ド素子 |
US5214306A (en) | 1991-01-29 | 1993-05-25 | Sanyo Electric Co., Ltd. | Light emitting diode |
DE4130878C2 (de) * | 1991-09-17 | 1997-04-10 | Telefunken Microelectron | Verfahren zur Herstellung von aus Halbleiterschichten bestehenden Lumineszenz-Halbleiterkörpern |
US5233204A (en) | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
JPH05327012A (ja) * | 1992-05-15 | 1993-12-10 | Sanyo Electric Co Ltd | 炭化ケイ素発光ダイオード |
DE4305296C3 (de) | 1993-02-20 | 1999-07-15 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen einer strahlungsemittierenden Diode |
DE4427840A1 (de) | 1994-07-28 | 1996-02-01 | Osa Elektronik Gmbh | Verfahren zur Effizienzerhöhung von A¶I¶¶I¶¶I¶B¶V¶ - Halbleiter-Chips |
US6005257A (en) * | 1995-09-13 | 1999-12-21 | Litton Systems, Inc. | Transmission mode photocathode with multilayer active layer for night vision and method |
DE19537544A1 (de) | 1995-10-09 | 1997-04-10 | Telefunken Microelectron | Lumineszenzdiode mit verbesserter Lichtausbeute |
US6281524B1 (en) | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
US6229160B1 (en) | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
DE10006738C2 (de) | 2000-02-15 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung |
US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6740906B2 (en) * | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
-
2001
- 2001-09-28 DE DE10148227.2A patent/DE10148227B4/de not_active Expired - Fee Related
-
2002
- 2002-09-27 DE DE50214662T patent/DE50214662D1/de not_active Expired - Lifetime
- 2002-09-27 US US10/491,304 patent/US7446344B2/en not_active Expired - Fee Related
- 2002-09-27 JP JP2003533356A patent/JP2005505140A/ja active Pending
- 2002-09-27 WO PCT/DE2002/003668 patent/WO2003030271A2/de active Application Filing
- 2002-09-27 EP EP02781115A patent/EP1430544B1/de not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101484461B1 (ko) * | 2006-12-21 | 2015-01-20 | 코닌클리케 필립스 엔.브이. | 성형된 파장 변환기를 가지는 발광 장치 |
Also Published As
Publication number | Publication date |
---|---|
DE50214662D1 (de) | 2010-10-28 |
EP1430544A2 (de) | 2004-06-23 |
WO2003030271A2 (de) | 2003-04-10 |
DE10148227A1 (de) | 2003-04-30 |
DE10148227B4 (de) | 2015-03-05 |
US20050017258A1 (en) | 2005-01-27 |
US7446344B2 (en) | 2008-11-04 |
WO2003030271A3 (de) | 2004-02-12 |
EP1430544B1 (de) | 2010-09-15 |
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