JP2005351716A - 半導体センサ - Google Patents
半導体センサ Download PDFInfo
- Publication number
- JP2005351716A JP2005351716A JP2004171656A JP2004171656A JP2005351716A JP 2005351716 A JP2005351716 A JP 2005351716A JP 2004171656 A JP2004171656 A JP 2004171656A JP 2004171656 A JP2004171656 A JP 2004171656A JP 2005351716 A JP2005351716 A JP 2005351716A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- stopper
- diaphragm
- semiconductor sensor
- stopper surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000002093 peripheral effect Effects 0.000 claims abstract description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 230000000644 propagated effect Effects 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 230000005484 gravity Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000033228 biological regulation Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims 1
- 230000001133 acceleration Effects 0.000 description 17
- 230000006378 damage Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009863 impact test Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
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- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004171656A JP2005351716A (ja) | 2004-06-09 | 2004-06-09 | 半導体センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004171656A JP2005351716A (ja) | 2004-06-09 | 2004-06-09 | 半導体センサ |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006329991A Division JP2007114208A (ja) | 2006-12-06 | 2006-12-06 | 半導体センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005351716A true JP2005351716A (ja) | 2005-12-22 |
| JP2005351716A5 JP2005351716A5 (enExample) | 2006-05-11 |
Family
ID=35586327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004171656A Pending JP2005351716A (ja) | 2004-06-09 | 2004-06-09 | 半導体センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005351716A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008147441A (ja) * | 2006-12-11 | 2008-06-26 | Rohm Co Ltd | 半導体装置 |
| US7765870B2 (en) | 2006-08-21 | 2010-08-03 | Rohm Co., Ltd. | Acceleration sensor and method of manufacturing the same |
| US7845229B2 (en) | 2006-08-11 | 2010-12-07 | Rohm Co., Ltd. | Acceleration sensor |
| US8151642B2 (en) | 2007-10-30 | 2012-04-10 | Rohm Co., Ltd. | Semiconductor device |
| US8276449B2 (en) | 2008-09-18 | 2012-10-02 | Rohm Co., Ltd. | Acceleration sensor and method of manufacturing acceleration sensor |
-
2004
- 2004-06-09 JP JP2004171656A patent/JP2005351716A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7845229B2 (en) | 2006-08-11 | 2010-12-07 | Rohm Co., Ltd. | Acceleration sensor |
| US8776602B2 (en) | 2006-08-11 | 2014-07-15 | Rohm Co., Ltd. | Acceleration sensor, semiconductor device and method of manufacturing semiconductor device |
| US7765870B2 (en) | 2006-08-21 | 2010-08-03 | Rohm Co., Ltd. | Acceleration sensor and method of manufacturing the same |
| JP2008147441A (ja) * | 2006-12-11 | 2008-06-26 | Rohm Co Ltd | 半導体装置 |
| US8151642B2 (en) | 2007-10-30 | 2012-04-10 | Rohm Co., Ltd. | Semiconductor device |
| US8276449B2 (en) | 2008-09-18 | 2012-10-02 | Rohm Co., Ltd. | Acceleration sensor and method of manufacturing acceleration sensor |
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